CN103762256A - 生长在Si衬底上的InGaAs薄膜及其制备方法 - Google Patents

生长在Si衬底上的InGaAs薄膜及其制备方法 Download PDF

Info

Publication number
CN103762256A
CN103762256A CN201410018708.XA CN201410018708A CN103762256A CN 103762256 A CN103762256 A CN 103762256A CN 201410018708 A CN201410018708 A CN 201410018708A CN 103762256 A CN103762256 A CN 103762256A
Authority
CN
China
Prior art keywords
substrate
resilient coating
film
growth
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410018708.XA
Other languages
English (en)
Other versions
CN103762256B (zh
Inventor
李国强
高芳亮
管云芳
温雷
李景灵
张曙光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China University of Technology SCUT
Original Assignee
South China University of Technology SCUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China University of Technology SCUT filed Critical South China University of Technology SCUT
Priority to CN201410018708.XA priority Critical patent/CN103762256B/zh
Publication of CN103762256A publication Critical patent/CN103762256A/zh
Priority to PCT/CN2014/093143 priority patent/WO2015106608A1/zh
Priority to SG11201605743UA priority patent/SG11201605743UA/en
Priority to US15/026,726 priority patent/US9870918B2/en
Application granted granted Critical
Publication of CN103762256B publication Critical patent/CN103762256B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Ceramic Engineering (AREA)

Abstract

本发明公开了生长在Si衬底上的InGaAs薄膜，包括依次排列的Si衬底、低温In0.4Ga0.6As缓冲层、高温In0.4Ga0.6As缓冲层以及In0.53Ga0.47As外延薄膜，低温In0.4Ga0.6As缓冲层为在350～380℃生长的In0.4Ga0.6As缓冲层；高温In0.4Ga0.6As缓冲层为在500～540℃生长的In0.4Ga0.6As缓冲层；低温In0.4Ga0.6As缓冲层和高温In0.4Ga0.6As缓冲层的厚度之和为10～20nm。本发明还公开了InGaAs薄膜的制备方法。本发明的生长在Si衬底上的InGaAs薄膜，晶体质量较好、几乎完全弛豫，且制备工艺简单。

Description

生长在Si衬底上的InGaAs薄膜及其制备方法
技术领域
本发明涉及InGaAs薄膜及其制备方法，特别涉及一种生长在Si衬底上的InGaAs薄膜及其制备方法。
背景技术
III-V族化合物由于具有稳定性好、有效质量小、电子迁移率和峰值速度高、以及光吸收系数较高等优点，被广泛地应用于光电器件中。在这当中，InxGa1-xAs（0≤x≤1）材料的禁带宽度随着In组分变化可以在0.35eV（InAs）～1.43eV（GaAs）范围内变化。根据这些特性，InxGa1-xAs材料特别是In组分为0.53的In0.53Ga0.47As材料可以被应用于室温红外探测器、高效叠层太阳能电池中。
外延生长In0.53Ga0.47As材料的常用衬底为InP、GaAs及Si。但InP与GaAs价格昂贵、晶片尺寸较小、并且较脆，不利于工业化生产。Si衬底与InP、GaAs衬底相比，价格低廉，并且易于大尺寸化。同时，现在市场上绝大部分的集成芯片都是Si，因此在Si上生长In0.53Ga0.47As薄膜便于将其整合到现有的芯片当中。但是由于Si与In0.53Ga0.47As材料间存在着较大的晶格失配（≈9%），这就造成如果直接在Si上生长In0.53Ga0.47As，所得到的薄膜中会产生大量的残余应力。大的残余应力对In0.53Ga0.47As薄膜性能有很大影响。一方面，大的残余应力可能使In0.53Ga0.47As薄膜在生长时产生裂纹甚至开裂。另一方面，大的残余应力将会造成In0.53Ga0.47As薄膜中产生大量的缺陷，恶化器件性能。为了在Si衬底上生长出高质量的In0.53Ga0.47As材料，最佳途径是在Si衬底上先外延生长缓冲层材料释放应力，然后再外延生长In0.53Ga0.47As材料。但目前在In0.53Ga0.47As生长中，大多数采用多层的组分渐变、组分跳变、组分逆变等缓冲层结构，这往往造成在生长In0.53Ga0.47As材料前需要外延生长多层较厚的缓冲层，生长步骤繁琐，而且很难精确控制每一层材料的成分、厚度、以及晶体质量，从而影响最终获得的In0.53Ga0.47As薄膜质量。因此，为了得到低残余应力、高质量的In0.53Ga0.47As薄膜，就需要对缓冲层生长工艺进行优化。
发明内容
为了克服现有技术的上述缺点与不足，本发明的目的在于提供一种生长在Si衬底上的InGaAs薄膜，该薄膜晶体质量较好、几乎完全弛豫。
本发明的另一目的在于提供上述长在Si衬底上的InGaAs薄膜的制备方法，采用该方法，在Si衬底上制备得到了晶体质量较好、几乎完全弛豫的In0.53Ga0.47As外延薄膜，同时大幅度简化了该薄膜材料的生长工艺。
本发明的目的通过以下技术方案实现：
生长在Si衬底上的InGaAs薄膜，包括依次排列的Si衬底、低温In0.4Ga0.6As缓冲层、高温In0.4Ga0.6As缓冲层以及In0.53Ga0.47As外延薄膜，所述低温In0.4Ga0.6As缓冲层为在350～380℃生长的In0.4Ga0.6As缓冲层；所述高温In0.4Ga0.6As缓冲层为在500～540℃生长的In0.4Ga0.6As缓冲层；所述低温In0.4Ga0.6As缓冲层和高温In0.4Ga0.6As缓冲层的厚度之和为10～20nm；只有In0.4Ga0.6As缓冲层的总厚度控制在10～20nm，生长温度分别控制在350～380℃及500～540℃，才能降低由于晶格失配造成的应力，使得所制备的In0.53Ga0.47As弛豫度高、残余应力低。
所述生长在Si衬底上的InGaAs薄膜的制备方法，包括以下步骤：
（1）对Si衬底进行清洗；
（2）对Si衬底进行预处理；
（3）对Si衬底进行脱氧化膜；
（4）在Si衬底上生长低温In0.4Ga0.6As缓冲层：Si衬底温度为350～380℃，在反应室压力为7.2×10-5～1.8×10-8Pa、Ⅴ/Ⅲ值为60～80、生长速度为0.5～1ML/s条件生长4～8nm的In0.4Ga0.6As缓冲层；
（5）在低温In0.4Ga0.6As缓冲层生长高温In0.4Ga0.6As缓冲层：Si衬底温度为500～540℃，在反应室压力为3.0×10-5～2.5×10-8pa、Ⅴ/Ⅲ值为20～30、生长速度为0.3～0.5ML/s条件下生长6～12nm的In0.4Ga0.6As缓冲层；
（6）在高温In0.4Ga0.6As缓冲层上生长In0.53Ga0.47As外延薄膜：Si衬底温度为550～580℃，在反应室压力为4.0×10-5～2.7×10-8Pa、Ⅴ/Ⅲ值为40～60、生长速度为0.6～1ML/s条件下，生长In0.53Ga0.47As外延薄膜。
所述Si衬底为(111)晶向的n型Si衬底。
步骤（1）所述对Si衬底进行清洗，具体为：
采用丙酮、去离子水洗涤，去除衬底表面有机物；将Si衬底依次置于HF:H2O=1:10溶液中超声1～3分钟、浓H2SO4:H2O2:H2O=4:1:5超声5～10分钟、HF:H2O=1:10溶液中超声1～3分钟，最后经去离子水清洗去除表面氧化物和有机物；清洗后的Si衬底用高纯氮气吹干。
步骤（2）所述对Si衬底进行预处理，具体为：
将清洗后的Si衬底送入分子束外延进样室预除气15～30分钟；再送入传递室300～400℃除气0.5～2小时，完成除气后送入生长室。
步骤（3）所述对Si衬底进行脱氧化膜，具体为；
Si衬底进入生长室后，将Si衬底温度升至950～1050℃，高温烘烤15～30分钟，除去衬底表面的氧化膜层。
步骤（4）中采用分子束外延或金属有机气相沉积方法制备低温In0.4Ga0.6As缓冲层。
步骤（5）中采用分子束外延或金属有机气相沉积方法制备高温In0.4Ga0.6As缓冲层。
步骤（6）中采用子束外延或金属有机气相沉积方法在高温In0.4Ga0.6As缓冲层上生长In0.53Ga0.47As外延薄膜。
与现有技术相比，本发明具有以下优点和有益效果：
（1）本发明使用了低温/高温In0.4Ga0.6As缓冲层技术，可有效过滤衬底与外延层之间由于晶格失配引起的位错，很好地释放应力。
（2）本发明使用低温/高温In0.4Ga0.6As缓冲层，能够有效地抑制界面的起伏，获得光滑平整的表面，能够提高In0.53Ga0.47As外延薄膜外延层的结晶质量。
（3）本发明使用了低温/高温In0.4Ga0.6As双层缓冲层，与多层缓冲层相比，该方法大为简化了缓冲层结构以及外延生长工艺，到达可严格控制外延层的厚度、组分的要求，从而能获得表面形貌好、高弛豫度、晶体质量高的In0.53Ga0.47As外延薄膜。
附图说明
图1为本发明的实施例的生长在Si衬底上的InGaAs薄膜的示意图。
图2为本发明的实施例的生长在Si衬底上的InGaAs薄膜的倒易空间扫描图。
图3为本发明的实施例的生长在Si衬底上的InGaAs薄膜的(111)面X射线摇摆曲线。
具体实施方式
下面结合实施例，对本发明作进一步地详细说明，但本发明的实施方式不限于此。
实施例1
本实施例的生长在Si衬底上的InGaAs薄膜的制备方法，包括以下步骤：
（1）对Si衬底进行清洗：采用丙酮、去离子水洗涤，去除衬底表面有机物；将Si衬底依次置于HF:H2O=1:10溶液中超声1分钟、浓H2SO4:H2O2:H2O=4:1:5超声5分钟、HF:H2O=1:10溶液中超声1分钟，最后经去离子水清洗去除表面氧化物和有机物；清洗后的Si衬底用高纯氮气吹干；
（2）对Si衬底进行预处理：将清洗后的Si衬底送入分子束外延进样室预除气15分钟；再送入传递室300℃除气0.5小时，完成除气后送入生长室；
（3）对Si衬底进行脱氧化膜；Si衬底进入生长室后，将Si衬底温度升至950℃，高温烘烤30分钟，除去衬底表面的氧化膜层；
（4）采用分子束外延方法在Si衬底上生长低温In0.4Ga0.6As缓冲层：Si衬底温度为350℃，在反应室压力为7.2×10-5Pa、Ⅴ/Ⅲ值为60、生长速度为0.5ML/s条件生长4nm的In0.4Ga0.6As缓冲层；
（5）采用分子束外延方法在低温In0.4Ga0.6As缓冲层生长高温In0.4Ga0.6As缓冲层：Si衬底温度为500℃，在反应室压力为3.0×10-5pa、Ⅴ/Ⅲ值为20、生长速度为0.3ML/s条件下生长6nm的In0.4Ga0.6As缓冲层；
（6）采用分子束外延方法在高温In0.4Ga0.6As缓冲层上生长In0.53Ga0.47As外延薄膜：Si衬底温度为550℃，在反应室压力为4.0×10-5Pa、Ⅴ/Ⅲ值为40、生长速度为0.6ML/s条件下，生长厚度为120nm的In0.53Ga0.47As外延薄膜。
本实施例制备的生长在Si衬底上的InGaAs薄膜如图1所示，包括依次排列的Si衬底11、低温In0.4Ga0.6As缓冲层12和高温In0.4Ga0.6As缓冲层13以及In0.53Ga0.47As外延薄膜14。
如图2所示，本实施例制备得到的生长在Si衬底上的InGaAs薄膜，弛豫度达到了95.6%，处于几乎为完全弛豫的状态，(111)面X射线摇摆曲线半峰宽为0.6°（如图3所示），表明In0.53Ga0.47As外延薄膜中的应力得到有效的释放，并且晶体质量与通过其他方法在Si上生长的In0.53Ga0.47As薄膜相比处于较好水平。
实施例2
本实施例的生长在Si衬底上的InGaAs薄膜的制备方法，包括以下步骤：
（1）对Si衬底进行清洗：采用丙酮、去离子水洗涤，去除衬底表面有机物；将Si衬底依次置于HF:H2O=1:10溶液中超声3分钟、浓H2SO4:H2O2:H2O=4:1:5超声10分钟、HF:H2O=1:10溶液中超声3分钟，最后经去离子水清洗去除表面氧化物和有机物；清洗后的Si衬底用高纯氮气吹干；
（2）对Si衬底进行预处理：将清洗后的Si衬底送入分子束外延进样室预除气30分钟；再送入传递室400℃除气2小时，完成除气后送入生长室；
（3）对Si衬底进行脱氧化膜；Si衬底进入生长室后，将Si衬底温度升至1050℃，高温烘烤15分钟，除去衬底表面的氧化膜层；
（4）采用金属有机气相沉积方法在Si衬底上生长低温In0.4Ga0.6As缓冲层：Si衬底温度为380℃，在反应室压力在1.8×10-8Pa、Ⅴ/Ⅲ值为80、生长速度1ML/s条件生长8nm的In0.4Ga0.6As缓冲层；
（5）采用金属有机气相沉积方法在低温In0.4Ga0.6As缓冲层生长高温In0.4Ga0.6As缓冲层：Si衬底温度为540℃，在反应室压力2.5×10-8pa、Ⅴ/Ⅲ值20～30、生长速度0.3～0.5ML/s条件下生长12nm的In0.4Ga0.6As缓冲层；
（6）采用金属有机气相沉积方法在高温In0.4Ga0.6As缓冲层上生长In0.53Ga0.47As外延薄膜：Si衬底温度为580℃，在反应室压力为2.7×10-8Pa、Ⅴ/Ⅲ值为60、生长速度为1ML/s条件下，生长厚度为130nm的In0.53Ga0.47As外延薄膜。
本实施例制备得到的生长在Si衬底上的InGaAs薄膜测试结果与实施例1相类似，在此不再赘述。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受所述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

Claims (9)

1.生长在Si衬底上的InGaAs薄膜，其特征在于，包括依次排列的Si衬底、低温In0.4Ga0.6As缓冲层、高温In0.4Ga0.6As缓冲层以及In0.53Ga0.47As外延薄膜，所述低温In0.4Ga0.6As缓冲层为在350～380℃生长的In0.4Ga0.6As缓冲层；所述高温In0.4Ga0.6As缓冲层为在500～540℃生长的In0.4Ga0.6As缓冲层；所述低温In0.4Ga0.6As缓冲层和高温In0.4Ga0.6As缓冲层的厚度之和为10～20nm。
2.权利要求1所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，包括以下步骤：
（1）对Si衬底进行清洗；
（2）对Si衬底进行预处理；
（3）对Si衬底进行脱氧化膜；
（4）在Si衬底上生长低温In0.4Ga0.6As缓冲层：Si衬底温度为350～380℃，在反应室压力在7.2×10-5～1.8×10-8Pa、Ⅴ/Ⅲ值为60～80、生长速度0.5～1ML/s条件生长4～8nm的In0.4Ga0.6As缓冲层；
（5）在低温In0.4Ga0.6As缓冲层生长高温In0.4Ga0.6As缓冲层：Si衬底温度为500～540℃，在反应室压力为3.0×10-5～2.5×10-8pa、Ⅴ/Ⅲ值为20～30、生长速度为0.3～0.5ML/s条件下生长6～12nm的In0.4Ga0.6As缓冲层；
（6）在高温In0.4Ga0.6As缓冲层上生长In0.53Ga0.47As外延薄膜：Si衬底温度为550～580℃，在反应室压力为4.0×10-5～2.7×10-8Pa、Ⅴ/Ⅲ值为40～60、生长速度为0.6～1ML/s条件下，生长In0.53Ga0.47As外延薄膜。
3.根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，所述Si衬底为(111)晶向的n型Si衬底。
4.根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，步骤（1）所述对Si衬底进行清洗，具体为：
采用丙酮、去离子水洗涤，去除衬底表面有机物；将Si衬底依次置于HF:H2O=1:10溶液中超声1～3分钟、浓H2SO4:H2O2:H2O=4:1:5超声5～10分钟、HF:H2O=1:10溶液中超声1～3分钟，最后经去离子水清洗去除表面氧化物和有机物；清洗后的Si衬底用高纯氮气吹干。
5.根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，步骤（2）所述对Si衬底进行预处理，具体为：
将清洗后的Si衬底送入分子束外延进样室预除气15～30分钟；再送入传递室300～400℃除气0.5～2小时，完成除气后送入生长室。
6.根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，步骤（3）所述对Si衬底进行脱氧化膜，具体为；
Si衬底进入生长室后，将Si衬底温度升至950～1050℃，高温烘烤15～30分钟，除去衬底表面的氧化膜层。
7.根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，步骤（4）中采用分子束外延或金属有机气相沉积方法制备低温In0.4Ga0.6As缓冲层。
8.根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，步骤（5）中采用分子束外延或金属有机气相沉积方法制备高温In0.4Ga0.6As缓冲层。
9.根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，步骤（6）中采用子束外延或金属有机气相沉积方法在高温In0.4Ga0.6As缓冲层上生长In0.53Ga0.47As外延薄膜。
CN201410018708.XA 2014-01-15 2014-01-15 生长在Si衬底上的InGaAs薄膜及其制备方法 Active CN103762256B (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201410018708.XA CN103762256B (zh) 2014-01-15 2014-01-15 生长在Si衬底上的InGaAs薄膜及其制备方法
PCT/CN2014/093143 WO2015106608A1 (zh) 2014-01-15 2014-12-05 生长在Si衬底上的InGaAs薄膜及其制备方法
SG11201605743UA SG11201605743UA (en) 2014-01-15 2014-12-05 Ingaas film grown on si substrate and method for manufacturing same
US15/026,726 US9870918B2 (en) 2014-01-15 2014-12-05 InGaAs film grown on Si substrate and method for preparing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410018708.XA CN103762256B (zh) 2014-01-15 2014-01-15 生长在Si衬底上的InGaAs薄膜及其制备方法

Publications (2)

Publication Number Publication Date
CN103762256A true CN103762256A (zh) 2014-04-30
CN103762256B CN103762256B (zh) 2016-03-02

Family

ID=50529464

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410018708.XA Active CN103762256B (zh) 2014-01-15 2014-01-15 生长在Si衬底上的InGaAs薄膜及其制备方法

Country Status (4)

Country Link
US (1) US9870918B2 (zh)
CN (1) CN103762256B (zh)
SG (1) SG11201605743UA (zh)
WO (1) WO2015106608A1 (zh)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104617166A (zh) * 2015-01-22 2015-05-13 苏州苏纳光电有限公司 基于Si衬底的InGaAs红外探测器及其制备方法
WO2015106608A1 (zh) * 2014-01-15 2015-07-23 华南理工大学 生长在Si衬底上的InGaAs薄膜及其制备方法
CN104835718A (zh) * 2015-03-23 2015-08-12 华南理工大学 生长在Si衬底上的GaAs薄膜及其制备方法
CN105023962A (zh) * 2015-07-30 2015-11-04 华南理工大学 一种生长在Si衬底上的GaAs薄膜及其制备方法
CN105140104A (zh) * 2015-07-31 2015-12-09 华南理工大学 生长在Si衬底上的GaAs薄膜及制备方法
CN106356427A (zh) * 2016-11-08 2017-01-25 中国电子科技集团公司第四十四研究所 一种扩展波长近红外探测器缓冲层的生长方法
CN108376640A (zh) * 2018-01-09 2018-08-07 北京邮电大学 InGaAs/Si外延材料的制备方法
CN109767972A (zh) * 2018-12-13 2019-05-17 华南理工大学 在Si衬底上生长GaAs纳米线的方法
CN113314398A (zh) * 2021-05-25 2021-08-27 中国科学院苏州纳米技术与纳米仿生研究所 在GaP/Si衬底上外延生长InGaAs薄膜的方法及InGaAs薄膜

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116705882A (zh) * 2023-08-08 2023-09-05 中科爱毕赛思(常州)光电科技有限公司 一种低缺陷超晶格红外探测器外延材料结构及制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482672B1 (en) * 1997-11-06 2002-11-19 Essential Research, Inc. Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates
CN102560634A (zh) * 2012-02-20 2012-07-11 华南理工大学 在GaAs衬底上生长InGaAs薄膜的方法
CN103325863A (zh) * 2013-06-07 2013-09-25 华南理工大学 生长在GaAs衬底上的InGaAs薄膜及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4455351A (en) * 1983-06-13 1984-06-19 At&T Bell Laboratories Preparation of photodiodes
DE69429906T2 (de) * 1993-11-25 2002-08-01 Nippon Telegraph And Telephone Corp., Tokio/Tokyo Halbleiterstruktur und Herstellungsverfahren
JPH0831791A (ja) * 1994-07-11 1996-02-02 Mitsubishi Electric Corp 半導体層の製造方法
JP3244976B2 (ja) * 1994-12-05 2002-01-07 キヤノン株式会社 半導体レーザの駆動方法及び半導体レーザ装置及び光通信方法及びノード及び光通信システム
JP2003163226A (ja) 2001-11-27 2003-06-06 Fujitsu Quantum Devices Ltd 電界効果型化合物半導体装置及びその製造方法
US7842595B2 (en) 2009-03-04 2010-11-30 Alcatel-Lucent Usa Inc. Fabricating electronic-photonic devices having an active layer with spherical quantum dots
JP5953840B2 (ja) * 2012-03-13 2016-07-20 富士通株式会社 半導体装置及び受信機
CN103346092B (zh) 2013-07-22 2015-12-09 中国科学院半导体研究所 硅基高迁移率InGaAs沟道的环栅MOSFET制备方法
CN103762256B (zh) 2014-01-15 2016-03-02 华南理工大学 生长在Si衬底上的InGaAs薄膜及其制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482672B1 (en) * 1997-11-06 2002-11-19 Essential Research, Inc. Using a critical composition grading technique to deposit InGaAs epitaxial layers on InP substrates
CN102560634A (zh) * 2012-02-20 2012-07-11 华南理工大学 在GaAs衬底上生长InGaAs薄膜的方法
CN103325863A (zh) * 2013-06-07 2013-09-25 华南理工大学 生长在GaAs衬底上的InGaAs薄膜及其制备方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015106608A1 (zh) * 2014-01-15 2015-07-23 华南理工大学 生长在Si衬底上的InGaAs薄膜及其制备方法
US9870918B2 (en) 2014-01-15 2018-01-16 South China University Of Technology InGaAs film grown on Si substrate and method for preparing the same
CN104617166A (zh) * 2015-01-22 2015-05-13 苏州苏纳光电有限公司 基于Si衬底的InGaAs红外探测器及其制备方法
CN104835718B (zh) * 2015-03-23 2017-12-01 华南理工大学 生长在Si衬底上的GaAs薄膜及其制备方法
CN104835718A (zh) * 2015-03-23 2015-08-12 华南理工大学 生长在Si衬底上的GaAs薄膜及其制备方法
CN105023962A (zh) * 2015-07-30 2015-11-04 华南理工大学 一种生长在Si衬底上的GaAs薄膜及其制备方法
US10541133B2 (en) 2015-07-30 2020-01-21 South China University Of Technology GaAs thin film grown on Si substrate, and preparation method for GaAs thin film grown on Si substrate
CN105023962B (zh) * 2015-07-30 2017-03-08 华南理工大学 一种生长在Si衬底上的GaAs薄膜及其制备方法
WO2017016527A3 (zh) * 2015-07-30 2017-06-22 华南理工大学 一种生长在Si衬底上的GaAs薄膜及其制备方法
CN105140104B (zh) * 2015-07-31 2017-11-07 华南理工大学 生长在Si衬底上的GaAs薄膜及制备方法
CN105140104A (zh) * 2015-07-31 2015-12-09 华南理工大学 生长在Si衬底上的GaAs薄膜及制备方法
CN106356427A (zh) * 2016-11-08 2017-01-25 中国电子科技集团公司第四十四研究所 一种扩展波长近红外探测器缓冲层的生长方法
CN108376640A (zh) * 2018-01-09 2018-08-07 北京邮电大学 InGaAs/Si外延材料的制备方法
CN109767972A (zh) * 2018-12-13 2019-05-17 华南理工大学 在Si衬底上生长GaAs纳米线的方法
CN113314398A (zh) * 2021-05-25 2021-08-27 中国科学院苏州纳米技术与纳米仿生研究所 在GaP/Si衬底上外延生长InGaAs薄膜的方法及InGaAs薄膜
CN113314398B (zh) * 2021-05-25 2024-02-06 中国科学院苏州纳米技术与纳米仿生研究所 在GaP/Si衬底上外延生长InGaAs薄膜的方法及InGaAs薄膜

Also Published As

Publication number Publication date
WO2015106608A1 (zh) 2015-07-23
US9870918B2 (en) 2018-01-16
CN103762256B (zh) 2016-03-02
SG11201605743UA (en) 2016-08-30
US20160218006A1 (en) 2016-07-28

Similar Documents

Publication Publication Date Title
CN103762256B (zh) 生长在Si衬底上的InGaAs薄膜及其制备方法
JP4651099B2 (ja) 直接ウェハ結合による低欠陥のゲルマニウム膜の製造
CN105023962B (zh) 一种生长在Si衬底上的GaAs薄膜及其制备方法
US9343303B2 (en) Methods of forming low-defect strain-relaxed layers on lattice-mismatched substrates and related semiconductor structures and devices
CN101330002A (zh) 用于氮化物外延生长的图形蓝宝石衬底的制作方法
CN103000759A (zh) 砷化镓薄膜多结叠层太阳电池的制备方法
CN102560634A (zh) 在GaAs衬底上生长InGaAs薄膜的方法
CN103325863A (zh) 生长在GaAs衬底上的InGaAs薄膜及其制备方法
CN104465725A (zh) 一种生长在Si衬底上的In0.3Ga0.7As薄膜及制备方法
CN104835718B (zh) 生长在Si衬底上的GaAs薄膜及其制备方法
CN103943700B (zh) 一种生长在GaAs衬底上的InGaAsN薄膜及其制备方法
CN103903966A (zh) 基于斜切硅衬底的超高密度锗硅量子点的制备方法
CN104143590B (zh) 一种简单快速的硅表面钝化方法
CN114899258B (zh) 非极性AlGaN基深紫外光电探测器外延结构及其制备方法
CN107578985A (zh) 锑化镓衬底及锑化物基ⅱ类超晶格材料的表面清理方法
CN103938178A (zh) 直接在Si衬底上自催化生长InAsSb纳米线的方法
CN103794694B (zh) 具有拉伸应变的硅基锗薄膜及其制备方法
CN105140104A (zh) 生长在Si衬底上的GaAs薄膜及制备方法
CN203826398U (zh) 一种生长在GaAs衬底上的InGaAsN薄膜
CN104993005A (zh) 一种基于外延正向失配生长的多结GaAs薄膜太阳能电池
CN204834639U (zh) 一种生长在Si衬底上的GaAs薄膜
CN101969023A (zh) 在硅衬底上制作台阶生长MgxZn1-xO薄膜的方法
WO2012036177A1 (ja) ウェーハの表面処理方法および製造方法
CN102140695A (zh) 一种生长高铟组分铟镓砷的方法
US9269569B1 (en) Low defect density lattice-mismatched semiconductor devices and methods of fabricating same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20140430

Assignee: HEYUAN CHOICORE PHOTOELECTRIC TECHNOLOGY Co.,Ltd.

Assignor: SOUTH CHINA University OF TECHNOLOGY

Contract record no.: X2022440000223

Denomination of invention: InGaAs thin films grown on Si substrates and their preparation methods

Granted publication date: 20160302

License type: Common License

Record date: 20221009

EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20140430

Assignee: FOSHAN ELECTRICAL AND LIGHTING Co.,Ltd.

Assignor: SOUTH CHINA University OF TECHNOLOGY

Contract record no.: X2022980019772

Denomination of invention: InGaAs thin films grown on Si substrates and their preparation methods

Granted publication date: 20160302

License type: Common License

Record date: 20221026