WO2015106608A1 - 生长在Si衬底上的InGaAs薄膜及其制备方法 - Google Patents

生长在Si衬底上的InGaAs薄膜及其制备方法 Download PDF

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WO2015106608A1
WO2015106608A1 PCT/CN2014/093143 CN2014093143W WO2015106608A1 WO 2015106608 A1 WO2015106608 A1 WO 2015106608A1 CN 2014093143 W CN2014093143 W CN 2014093143W WO 2015106608 A1 WO2015106608 A1 WO 2015106608A1
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substrate
buffer layer
grown
temperature
growth
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French (fr)
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李国强
高芳亮
管云芳
温雷
李景灵
张曙光
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华南理工大学
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Priority to US15/026,726 priority Critical patent/US9870918B2/en
Priority to SG11201605743UA priority patent/SG11201605743UA/en
Publication of WO2015106608A1 publication Critical patent/WO2015106608A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
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    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Definitions

  • the invention relates to an InGaAs film and a preparation method thereof, in particular to an InGaAs film grown on a Si substrate and a preparation method thereof.
  • the forbidden band width of the In x Ga 1-x As (0 ⁇ x ⁇ 1) material may vary from 0.35 eV (InAs) to 1.43 eV (GaAs) as the In composition changes. According to these characteristics, the In x Ga 1-x As material, particularly the In 0.53 Ga 0.47 As material having an In composition of 0.53, can be applied to a room temperature infrared detector, a high efficiency laminated solar cell.
  • Common substrates for epitaxially growing In 0.53 Ga 0.47 As material are InP, GaAs, and Si.
  • InP and GaAs are expensive, the wafer size is small, and they are brittle, which is not conducive to industrial production.
  • the Si substrate is inexpensive compared to the InP, GaAs substrate, and is easy to be large-sized.
  • most of the integrated chips on the market today are Si, so the In 0.53 Ga 0.47 As film is grown on Si to facilitate integration into existing chips.
  • Due to the large lattice mismatch ( ⁇ 9%) between Si and In 0.53 Ga 0.47 As materials this results in a large amount of film produced if In 0.53 Ga 0.47 As is grown directly on Si. Residual Stress.
  • the large residual stress has a great influence on the properties of the In 0.53 Ga 0.47 As film.
  • large residual stresses may cause cracking or even cracking of the In 0.53 Ga 0.47 As film during growth.
  • large residual stresses will cause a large number of defects in the In 0.53 Ga 0.47 As film, deteriorating device performance.
  • the best way is to epitaxially grow a buffer layer material on the Si substrate to release stress, and then epitaxially grow the In 0.53 Ga 0.47 As material.
  • Another object of the present invention is to provide a method for preparing an InGaAs thin film grown on a Si substrate, by which an In 0.53 Ga 0.47 As epitaxial wafer having a good crystal quality and almost completely relaxed is prepared on a Si substrate.
  • the film also greatly simplifies the growth process of the film material.
  • An InGaAs film grown on a Si substrate comprising a Si substrate arranged in sequence, a low temperature In 0.4 Ga 0.6 As buffer layer, a high temperature In 0.4 Ga 0.6 As buffer layer, and an In 0.53 Ga 0.47 As epitaxial film
  • the low temperature In 0.4 Ga 0.6 As buffer layer is an In 0.4 Ga 0.6 As buffer layer grown at 350-380 o C
  • the high temperature In 0.4 Ga 0.6 As buffer layer is an In 0.4 Ga 0.6 As buffer layer grown at 500-540 o C
  • the sum of the thickness of the low temperature In 0.4 Ga 0.6 As buffer layer and the high temperature In 0.4 Ga 0.6 As buffer layer is 10-20 nm; only the total thickness of the In 0.4 Ga 0.6 As buffer layer is controlled at 10-20 nm, and the growth temperature is controlled at 350, respectively.
  • ⁇ 380 o C and 500 ⁇ 540 o C can reduce the stress caused by lattice mismatch, so that the prepared In 0.53 Ga 0.47 As has high relaxation and low residual stress.
  • the method for preparing the InGaAs film grown on a Si substrate comprises the following steps:
  • Si substrate temperature is 350 ⁇ 380 o C, and pressure in the reaction chamber is 7.2 ⁇ 10 -5 ⁇ 1.8 ⁇ 10 -8 Pa, V/III An In 0.4 Ga 0.6 As buffer layer with a growth rate of 0.5 to 1 ML/s and a growth rate of 4 to 8 nm;
  • the Si substrate is a (111) crystal orientation n-type Si substrate.
  • the step of (1) cleaning the Si substrate specifically:
  • Step (2) pre-treating the Si substrate specifically:
  • the cleaned Si substrate is sent to the molecular beam epitaxy chamber for pre-degassing for 15 to 30 minutes; and then sent to the transfer chamber at 300-400 o C for degassing for 0.5 to 2 hours, and then degassed and sent to the growth chamber.
  • Step (3) performing a deoxidation film on the Si substrate, specifically;
  • the Si substrate temperature was increased to 950 ⁇ 1050 o C, a high temperature bake for 15 to 30 minutes to remove the surface oxide film layer of the substrate.
  • a low temperature In 0.4 Ga 0.6 As buffer layer is prepared by molecular beam epitaxy or metal organic vapor deposition.
  • a high-temperature In 0.4 Ga 0.6 As buffer layer is prepared by molecular beam epitaxy or metal organic vapor deposition.
  • an In 0.53 Ga 0.47 As epitaxial film is grown on the high temperature In 0.4 Ga 0.6 As buffer layer by a beam epitaxy or a metal organic vapor deposition method.
  • the present invention has the following advantages and benefits:
  • the present invention uses a low-temperature/high-temperature In 0.4 Ga 0.6 As buffer layer technology, which can effectively filter dislocations caused by lattice mismatch between the substrate and the epitaxial layer, and release stress well.
  • the present invention uses a low-temperature/high-temperature In 0.4 Ga 0.6 As buffer layer, which can effectively suppress the undulation of the interface, obtain a smooth and flat surface, and can improve the crystal quality of the epitaxial layer of the In 0.53 Ga 0.47 As epitaxial thin film.
  • the present invention uses a low-temperature/high-temperature In 0.4 Ga 0.6 As double-layer buffer layer, which greatly simplifies the buffer layer structure and the epitaxial growth process as compared with the multilayer buffer layer, and reaches a thickness that can strictly control the epitaxial layer. And the requirements of the components, so that the In 0.53 Ga 0.47 As epitaxial film with good surface morphology, high relaxation and high crystal quality can be obtained.
  • FIG. 1 is a schematic view of an InGaAs thin film grown on a Si substrate according to an embodiment of the present invention.
  • FIG. 2 is a reciprocal space scan of an InGaAs film grown on a Si substrate in accordance with an embodiment of the present invention.
  • FIG. 3 is a (111) plane X-ray rocking curve of an InGaAs film grown on a Si substrate in accordance with an embodiment of the present invention.
  • the cleaned Si substrate is sent to the molecular beam epitaxy chamber for pre-degassing for 15 minutes; then sent to the transfer chamber 300 o C for degassing for 0.5 hours, after degassing is completed.
  • Si substrate temperature is 350 o C
  • pressure in reaction chamber is 7.2 ⁇ 10 -5 Pa
  • V/III value is 60
  • Si substrate temperature is 500 o C
  • pressure in the reaction chamber is 3.0 ⁇ 10 -5 pa, V/ a 6 nm In 0.4 Ga 0.6 As buffer layer with a III value of 20 and a growth rate of 0.3 ML/s;
  • the InGaAs thin film grown on the Si substrate prepared in this embodiment is as shown in FIG. 1, and includes a Si substrate 11 arranged in sequence, a low temperature In 0.4 Ga 0.6 As buffer layer 12, and a high temperature In 0.4 Ga 0.6 As buffer layer 13 and In. 0.53 Ga 0.47 As epitaxial film 14.
  • the InGaAs film grown on the Si substrate prepared in this embodiment has a relaxation degree of 95.6%, is in a state of almost complete relaxation, and has a half-width of the (111) plane X-ray rocking curve. It is 0.6° (as shown in Fig. 3), indicating that the stress in the In 0.53 Ga 0.47 As epitaxial film is effectively released, and the crystal quality is better than that of the In 0.53 Ga 0.47 As film grown on Si by other methods. Level.
  • the cleaned Si substrate is sent to the molecular beam epitaxy chamber for pre-degassing for 30 minutes; then sent to the transfer chamber at 400 o C for 2 hours to complete the degassing.
  • Si substrate temperature is 380 o C
  • pressure in the reaction chamber is 1.8 ⁇ 10 -8 Pa
  • V/III value 80 growth rate 1 ML / s condition growth 8 nm In 0.4 Ga 0.6 As buffer layer
  • Si substrate temperature is 540 o C
  • pressure in reaction chamber 2.5 ⁇ 10 -8 pa V/ A 12 nm In 0.4 Ga 0.6 As buffer layer was grown at a value of 20 to 30 and a growth rate of 0.3 to 0.5 ML/s;
  • test results of the InGaAs thin film grown on the Si substrate prepared in this embodiment are similar to those in the first embodiment, and are not described herein again.

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Abstract

提供了生长在Si衬底上的InGaAs薄膜，包括依次排列的Si衬底、低温In 0.4Ga 0.6As缓冲层、高温In 0.4Ga 0.6As缓冲层以及In 0.53Ga 0.47As外延薄膜，低温In 0.4Ga 0.6As缓冲层为在350～380℃生长的In 0.4Ga 0.6As缓冲层；高温In 0.4Ga 0.6As缓冲层为在500～540℃生长的In 0.4Ga 0.6As缓冲层；低温In 0.4Ga 0.6As缓冲层和高温In 0.4Ga 0.6As缓冲层的厚度之和为10～20nm。还提供了InGaAs薄膜的制备方法。该生长在Si衬底上的InGaAs薄膜，晶体质量较好、几乎完全弛豫，且制备工艺简单。

Description

生长在Si衬底上的InGaAs薄膜及其制备方法
技术领域
本发明涉及InGaAs薄膜及其制备方法，特别涉及一种生长在Si衬底上的InGaAs薄膜及其制备方法。
背景技术
III-V族化合物由于具有稳定性好、有效质量小、电子迁移率和峰值速度高、以及光吸收系数较高等优点，被广泛地应用于光电器件中。在这当中，InxGa1-xAs（0≤x≤1）材料的禁带宽度随着In组分变化可以在0.35 eV（InAs）~1.43 eV（GaAs）范围内变化。根据这些特性，InxGa1-xAs材料特别是In组分为0.53的In0.53Ga0.47As材料可以被应用于室温红外探测器、高效叠层太阳能电池中。
外延生长In0.53Ga0.47As材料的常用衬底为InP、GaAs及Si。但InP与GaAs价格昂贵、晶片尺寸较小、并且较脆，不利于工业化生产。Si衬底与InP、GaAs衬底相比，价格低廉，并且易于大尺寸化。同时，现在市场上绝大部分的集成芯片都是Si，因此在Si上生长In0.53Ga0.47As薄膜便于将其整合到现有的芯片当中。但是由于Si与In0.53Ga0.47As材料间存在着较大的晶格失配（≈9%），这就造成如果直接在Si上生长In0.53Ga0.47As，所得到的薄膜中会产生大量的残余应力。大的残余应力对In0.53Ga0.47As薄膜性能有很大影响。一方面，大的残余应力可能使In0.53Ga0.47As薄膜在生长时产生裂纹甚至开裂。另一方面，大的残余应力将会造成In0.53Ga0.47As薄膜中产生大量的缺陷，恶化器件性能。为了在Si衬底上生长出高质量的In0.53Ga0.47As材料，最佳途径是在Si衬底上先外延生长缓冲层材料释放应力，然后再外延生长In0.53Ga0.47As材料。但目前在In0.53Ga0.47As生长中，大多数采用多层的组分渐变、组分跳变、组分逆变等缓冲层结构，这往往造成在生长In0.53Ga0.47As材料前需要外延生长多层较厚的缓冲层，生长步骤繁琐，而且很难精确控制每一层材料的成分、厚度、以及晶体质量，从而影响最终获得的In0.53Ga0.47As薄膜质量。因此，为了得到低残余应力、高质量的In0.53Ga0.47As薄膜，就需要对缓冲层生长工艺进行优化。
发明内容
为了克服现有技术的上述缺点与不足，本发明的目的在于提供一种生长在Si衬底上的InGaAs薄膜，该薄膜晶体质量较好、几乎完全弛豫。
本发明的另一目的在于提供上述长在Si衬底上的InGaAs薄膜的制备方法，采用该方法，在Si衬底上制备得到了晶体质量较好、几乎完全弛豫的In0.53Ga0.47As外延薄膜，同时大幅度简化了该薄膜材料的生长工艺。
本发明的目的通过以下技术方案实现：
生长在Si衬底上的InGaAs薄膜，包括依次排列的Si衬底、低温In0.4Ga0.6As缓冲层、高温In0.4Ga0.6As缓冲层以及In0.53Ga0.47As外延薄膜，所述低温In0.4Ga0.6As缓冲层为在350~380 oC生长的In0.4Ga0.6As缓冲层；所述高温In0.4Ga0.6As缓冲层为在500~540 oC生长的In0.4Ga0.6As缓冲层；所述低温In0.4Ga0.6As缓冲层和高温In0.4Ga0.6As缓冲层的厚度之和为10~20 nm；只有In0.4Ga0.6As缓冲层的总厚度控制在10~20nm，生长温度分别控制在350~380 oC及500~540 oC，才能降低由于晶格失配造成的应力，使得所制备的In0.53Ga0.47As弛豫度高、残余应力低。
所述生长在Si衬底上的InGaAs薄膜的制备方法，包括以下步骤：
（1）对Si衬底进行清洗；
（2）对Si衬底进行预处理；
（3）对Si衬底进行脱氧化膜；
（4）在Si衬底上生长低温In0.4Ga0.6As缓冲层：Si衬底温度为350~380 oC，在反应室压力为7.2×10-5~1.8×10-8 Pa、Ⅴ/Ⅲ值为60~80、生长速度为0.5~1 ML/s条件生长4~8 nm的In0.4Ga0.6As缓冲层；
（5）在低温In0.4Ga0.6As缓冲层生长高温In0.4Ga0.6As缓冲层：Si衬底温度为500~540 oC，在反应室压力为3.0×10-5~2.5×10-8 pa、Ⅴ/Ⅲ值为20~30、生长速度为0.3~0.5 ML/s条件下生长6~12 nm的In0.4Ga0.6As缓冲层；
（6）在高温In0.4Ga0.6As缓冲层上生长In0.53Ga0.47As外延薄膜：Si衬底温度为550~580 oC，在反应室压力为4.0×10-5~2.7×10-8 Pa、Ⅴ/Ⅲ值为40~60、生长速度为0.6~1 ML/s条件下，生长In0.53Ga0.47As外延薄膜。
所述Si衬底为(111)晶向的n型Si衬底。
步骤（1）所述对Si衬底进行清洗，具体为：
采用丙酮、去离子水洗涤，去除衬底表面有机物；将Si衬底依次置于HF:H2O=1:10溶液中超声1~3分钟、浓H2SO4:H2O2:H2O=4:1:5超声5~10分钟、HF:H2O=1:10溶液中超声1~3分钟，最后经去离子水清洗去除表面氧化物和有机物；清洗后的Si衬底用高纯氮气吹干。
步骤（2）所述对Si衬底进行预处理，具体为：
将清洗后的Si衬底送入分子束外延进样室预除气15~30分钟；再送入传递室300~400 oC除气0.5~2小时，完成除气后送入生长室。
步骤（3）所述对Si衬底进行脱氧化膜，具体为；
Si衬底进入生长室后，将Si衬底温度升至950~1050 oC，高温烘烤15~30分钟，除去衬底表面的氧化膜层。
步骤（4）中采用分子束外延或金属有机气相沉积方法制备低温In0.4Ga0.6As缓冲层。
步骤（5）中采用分子束外延或金属有机气相沉积方法制备高温In0.4Ga0.6As缓冲层。
步骤（6）中采用子束外延或金属有机气相沉积方法在高温In0.4Ga0.6As缓冲层上生长In0.53Ga0.47As外延薄膜。
与现有技术相比，本发明具有以下优点和有益效果：
（1）本发明使用了低温/高温In0.4Ga0.6As缓冲层技术，可有效过滤衬底与外延层之间由于晶格失配引起的位错，很好地释放应力。
（2）本发明使用低温/高温In0.4Ga0.6As缓冲层，能够有效地抑制界面的起伏，获得光滑平整的表面，能够提高In0.53Ga0.47As外延薄膜外延层的结晶质量。
（3）本发明使用了低温/高温In0.4Ga0.6As双层缓冲层，与多层缓冲层相比，该方法大为简化了缓冲层结构以及外延生长工艺，到达可严格控制外延层的厚度、组分的要求，从而能获得表面形貌好、高弛豫度、晶体质量高的In0.53Ga0.47As外延薄膜。
附图说明
图1为本发明的实施例的生长在Si衬底上的InGaAs薄膜的示意图。
图2为本发明的实施例的生长在Si衬底上的InGaAs薄膜的倒易空间扫描图。
图3为本发明的实施例的生长在Si衬底上的InGaAs薄膜的(111)面X射线摇摆曲线。
具体实施方式
下面结合实施例，对本发明作进一步地详细说明，但本发明的实施方式不限于此。
实施例1
本实施例的生长在Si衬底上的InGaAs薄膜的制备方法，包括以下步骤：
（1）对Si衬底进行清洗：采用丙酮、去离子水洗涤，去除衬底表面有机物；将Si衬底依次置于HF:H2O=1:10溶液中超声1分钟、浓H2SO4:H2O2:H2O=4:1:5超声5分钟、HF:H2O=1:10溶液中超声1分钟，最后经去离子水清洗去除表面氧化物和有机物；清洗后的Si衬底用高纯氮气吹干；
（2）对Si衬底进行预处理：将清洗后的Si衬底送入分子束外延进样室预除气15分钟；再送入传递室300 oC除气0.5小时，完成除气后送入生长室；
（3）对Si衬底进行脱氧化膜；Si衬底进入生长室后，将Si衬底温度升至950 oC，高温烘烤30分钟，除去衬底表面的氧化膜层；
（4）采用分子束外延方法在Si衬底上生长低温In0.4Ga0.6As缓冲层：Si衬底温度为350 oC，在反应室压力为7.2×10-5 Pa、Ⅴ/Ⅲ值为60、生长速度为0.5 ML/s条件生长4 nm的In0.4Ga0.6As缓冲层；
（5）采用分子束外延方法在低温In0.4Ga0.6As缓冲层生长高温In0.4Ga0.6As缓冲层：Si衬底温度为500 oC，在反应室压力为3.0×10-5 pa、Ⅴ/Ⅲ值为20、生长速度为0.3 ML/s条件下生长6 nm的In0.4Ga0.6As缓冲层；
（6）采用分子束外延方法在高温In0.4Ga0.6As缓冲层上生长In0.53Ga0.47As外延薄膜：Si衬底温度为550 oC，在反应室压力为4.0×10-5 Pa、Ⅴ/Ⅲ值为40、生长速度为0.6 ML/s条件下，生长厚度为120 nm的In0.53Ga0.47As外延薄膜。
本实施例制备的生长在Si衬底上的InGaAs薄膜如图1所示，包括依次排列的Si衬底11、低温In0.4Ga0.6As缓冲层12和高温In0.4Ga0.6As缓冲层13以及In0.53Ga0.47As外延薄膜14。
如图2所示，本实施例制备得到的生长在Si衬底上的InGaAs薄膜，弛豫度达到了95.6%，处于几乎为完全弛豫的状态，(111)面X射线摇摆曲线半峰宽为0.6°（如图3所示），表明In0.53Ga0.47As外延薄膜中的应力得到有效的释放，并且晶体质量与通过其他方法在Si上生长的In0.53Ga0.47As薄膜相比处于较好水平。
实施例2
本实施例的生长在Si衬底上的InGaAs薄膜的制备方法，包括以下步骤：
（1）对Si衬底进行清洗：采用丙酮、去离子水洗涤，去除衬底表面有机物；将Si衬底依次置于HF:H2O=1:10溶液中超声3分钟、浓H2SO4:H2O2:H2O=4:1:5超声10分钟、HF:H2O=1:10溶液中超声3分钟，最后经去离子水清洗去除表面氧化物和有机物；清洗后的Si衬底用高纯氮气吹干；
（2）对Si衬底进行预处理：将清洗后的Si衬底送入分子束外延进样室预除气30分钟；再送入传递室400 oC除气2小时，完成除气后送入生长室；
（3）对Si衬底进行脱氧化膜；Si衬底进入生长室后，将Si衬底温度升至1050 oC，高温烘烤15分钟，除去衬底表面的氧化膜层；
（4）采用金属有机气相沉积方法在Si衬底上生长低温In0.4Ga0.6As缓冲层：Si衬底温度为380 oC，在反应室压力在1.8×10-8 Pa、Ⅴ/Ⅲ值为80、生长速度1 ML/s条件生长8 nm的In0.4Ga0.6As缓冲层；
（5）采用金属有机气相沉积方法在低温In0.4Ga0.6As缓冲层生长高温In0.4Ga0.6As缓冲层：Si衬底温度为540 oC，在反应室压力2.5×10-8 pa、Ⅴ/Ⅲ值20~30、生长速度0.3~0.5 ML/s条件下生长12 nm的In0.4Ga0.6As缓冲层；
（6）采用金属有机气相沉积方法在高温In0.4Ga0.6As缓冲层上生长In0.53Ga0.47As外延薄膜：Si衬底温度为580 oC，在反应室压力为2.7×10-8 Pa、Ⅴ/Ⅲ值为60、生长速度为1 ML/s条件下，生长厚度为130 nm的In0.53Ga0.47As外延薄膜。
本实施例制备得到的生长在Si衬底上的InGaAs薄膜测试结果与实施例1相类似，在此不再赘述。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受所述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

Claims (9)

  1. 生长在Si衬底上的InGaAs薄膜，其特征在于，包括依次排列的Si衬底、低温In0.4Ga0.6As缓冲层、高温In0.4Ga0.6As缓冲层以及In0.53Ga0.47As外延薄膜，所述低温In0.4Ga0.6As缓冲层为在350~380 oC生长的In0.4Ga0.6As缓冲层；所述高温In0.4Ga0.6As缓冲层为在500~540 oC生长的In0.4Ga0.6As缓冲层；所述低温In0.4Ga0.6As缓冲层和高温In0.4Ga0.6As缓冲层的厚度之和为10~20 nm。
  2. 权利要求1所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，包括以下步骤：
    （1）对Si衬底进行清洗；
    （2）对Si衬底进行预处理；
    （3）对Si衬底进行脱氧化膜；
    （4）在Si衬底上生长低温In0.4Ga0.6As缓冲层：Si衬底温度为350~380 oC，在反应室压力在7.2×10-5~1.8×10-8 Pa、Ⅴ/Ⅲ值为60~80、生长速度0.5~1 ML/s条件生长4~8 nm的In0.4Ga0. 6As缓冲层；
    （5）在低温In0.4Ga0.6As缓冲层生长高温In0.4Ga0.6As缓冲层：Si衬底温度为500~540 oC，在反应室压力为3.0×10-5~2.5×10-8 pa、Ⅴ/Ⅲ值为20~30、生长速度为0.3~0.5 ML/s条件下生长6~12 nm的In0.4Ga0.6As缓冲层；
    （6）在高温In0.4Ga0.6As缓冲层上生长In0.53Ga0.47As外延薄膜：Si衬底温度为550~580 oC，在反应室压力为4.0×10-5~2.7×10-8 Pa、Ⅴ/Ⅲ值为40~60、生长速度为0.6~1 ML/s条件下，生长In0.53Ga0.47As外延薄膜。
  3. 根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，所述Si衬底为(111)晶向的n型Si衬底。
  4. 根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，步骤（1）所述对Si衬底进行清洗，具体为：
    采用丙酮、去离子水洗涤，去除衬底表面有机物；将Si衬底依次置于HF:H2O=1:10溶液中超声1~3分钟、浓H2SO4:H2O2:H2O=4:1:5超声5~10分钟、HF:H2O=1:10溶液中超声1~3分钟，最后经去离子水清洗去除表面氧化物和有机物；清洗后的Si衬底用高纯氮气吹干。
  5. 根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，步骤（2）所述对Si衬底进行预处理，具体为：
    将清洗后的Si衬底送入分子束外延进样室预除气15~30分钟；再送入传递室300~400 oC除气0.5~2小时，完成除气后送入生长室。
  6. 根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，步骤（3）所述对Si衬底进行脱氧化膜，具体为；
    Si衬底进入生长室后，将Si衬底温度升至950~1050 oC，高温烘烤15~30分钟，除去衬底表面的氧化膜层。
  7. 根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，步骤（4）中采用分子束外延或金属有机气相沉积方法制备低温In0.4Ga0.6As缓冲层。
  8. 根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，步骤（5）中采用分子束外延或金属有机气相沉积方法制备高温In0.4Ga0.6As缓冲层。
  9. 根据权利要求2所述生长在Si衬底上的InGaAs薄膜的制备方法，其特征在于，步骤（6）中采用子束外延或金属有机气相沉积方法在高温In0.4Ga0.6As缓冲层上生长In0.53Ga0.47As外延薄膜。
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CN105023962B (zh) * 2015-07-30 2017-03-08 华南理工大学 一种生长在Si衬底上的GaAs薄膜及其制备方法
CN105140104B (zh) * 2015-07-31 2017-11-07 华南理工大学 生长在Si衬底上的GaAs薄膜及制备方法
CN106356427B (zh) * 2016-11-08 2017-10-13 中国电子科技集团公司第四十四研究所 一种扩展波长近红外探测器缓冲层的生长方法
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CN109767972B (zh) * 2018-12-13 2021-05-14 华南理工大学 在Si衬底上生长GaAs纳米线的方法
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