FR3064108B1 - Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage - Google Patents

Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage Download PDF

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Publication number
FR3064108B1
FR3064108B1 FR1752230A FR1752230A FR3064108B1 FR 3064108 B1 FR3064108 B1 FR 3064108B1 FR 1752230 A FR1752230 A FR 1752230A FR 1752230 A FR1752230 A FR 1752230A FR 3064108 B1 FR3064108 B1 FR 3064108B1
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France
Prior art keywords
substrate
screens
formation
manufacturing
field
Prior art date
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Active
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FR1752230A
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English (en)
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FR3064108A1 (fr
Inventor
David Sotta
Olivier Ledoux
Olivier Bonnin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1752230A priority Critical patent/FR3064108B1/fr
Priority to US15/491,827 priority patent/US10084011B1/en
Priority to FR1758774A priority patent/FR3064110B1/fr
Priority to SG11201908017R priority patent/SG11201908017RA/en
Priority to PCT/FR2018/050606 priority patent/WO2018167426A2/fr
Priority to CN201880018523.5A priority patent/CN110447100B/zh
Priority to US16/069,469 priority patent/US20210210653A1/en
Priority to JP2019541084A priority patent/JP7053055B2/ja
Priority to KR1020197030303A priority patent/KR102456048B1/ko
Priority to EP18714309.4A priority patent/EP3596756B1/fr
Priority to EP22161925.7A priority patent/EP4033531B1/fr
Priority to TW107108791A priority patent/TWI740015B/zh
Publication of FR3064108A1 publication Critical patent/FR3064108A1/fr
Priority to JP2022048947A priority patent/JP7322329B2/ja
Application granted granted Critical
Publication of FR3064108B1 publication Critical patent/FR3064108B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
FR1752230A 2017-03-17 2017-03-17 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage Active FR3064108B1 (fr)

Priority Applications (13)

Application Number Priority Date Filing Date Title
FR1752230A FR3064108B1 (fr) 2017-03-17 2017-03-17 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage
US15/491,827 US10084011B1 (en) 2017-03-17 2017-04-19 Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the susbstrate, in particular in the field of micro-display screens
FR1758774A FR3064110B1 (fr) 2017-03-17 2017-09-22 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage
PCT/FR2018/050606 WO2018167426A2 (fr) 2017-03-17 2018-03-14 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage
CN201880018523.5A CN110447100B (zh) 2017-03-17 2018-03-14 用于形成光电器件的生长基板、制造该基板的方法以及该基板特别是在微显示器领域的使用
US16/069,469 US20210210653A1 (en) 2017-03-17 2018-03-14 Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the substrate, in particular in the field of micro-display screens
SG11201908017R SG11201908017RA (en) 2017-03-17 2018-03-14 Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the substrate, in particular in the field of micro-display screens
JP2019541084A JP7053055B2 (ja) 2017-03-17 2018-03-14 光電子デバイスを形成するための成長基板、そのような基板を作製するための方法、及び特にマイクロディスプレイスクリーンの分野における基板の使用
KR1020197030303A KR102456048B1 (ko) 2017-03-17 2018-03-14 광전자 디바이스들을 형성하기 위한 성장 기판, 이러한 기판의 제조 방법 및 특히 마이크로-디스플레이 스크린 분야에서의 기판의 사용 방법
EP18714309.4A EP3596756B1 (fr) 2017-03-17 2018-03-14 Procédé de fabrication d'une pluralité d'îlots semi-conducteurs cristallins présentant une variété de paramètres de maille
EP22161925.7A EP4033531B1 (fr) 2017-03-17 2018-03-14 Procédé de fabrication d'une pluralité d'îlots semiconducteurs cristallins
TW107108791A TWI740015B (zh) 2017-03-17 2018-03-15 用於形成光電元件之生長底材與製作這種底材之方法，以及這種底材在微顯示螢幕領域之應用
JP2022048947A JP7322329B2 (ja) 2017-03-17 2022-03-24 光電子デバイスを形成するための成長基板、そのような基板を作製するための方法、及び特にマイクロディスプレイスクリーンの分野における基板の使用

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1752230A FR3064108B1 (fr) 2017-03-17 2017-03-17 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage
FR1752230 2017-03-17

Publications (2)

Publication Number Publication Date
FR3064108A1 FR3064108A1 (fr) 2018-09-21
FR3064108B1 true FR3064108B1 (fr) 2022-12-30

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ID=61027774

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1752230A Active FR3064108B1 (fr) 2017-03-17 2017-03-17 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage
FR1758774A Active FR3064110B1 (fr) 2017-03-17 2017-09-22 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage

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Application Number Title Priority Date Filing Date
FR1758774A Active FR3064110B1 (fr) 2017-03-17 2017-09-22 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage

Country Status (2)

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US (1) US10084011B1 (fr)
FR (2) FR3064108B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109378365B (zh) * 2017-08-08 2021-09-14 英属开曼群岛商錼创科技股份有限公司 微型发光二极管装置及其制作方法
FR3088478B1 (fr) * 2018-11-08 2020-10-30 Soitec Silicon On Insulator Procede de fabrication collective d'une pluralite de structures semi-conductrices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100268567B1 (ko) 1994-10-11 2000-10-16 포만 제프리 엘 다중 파장으로 광을 발생시키기 위한 발광 다이오드의 모놀리식 어레이 및 이를 사용한 멀티 컬러 디스플레이
GB2451884A (en) * 2007-08-16 2009-02-18 Sharp Kk A Semiconductor Device and a Method of Manufacture Thereof
EP2151852B1 (fr) * 2008-08-06 2020-01-15 Soitec Relâchement et transfert de couches tendues
EP2151856A1 (fr) * 2008-08-06 2010-02-10 S.O.I. TEC Silicon Relâchement de couches tendues
FR2936903B1 (fr) 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
FR2992466A1 (fr) 2012-06-22 2013-12-27 Soitec Silicon On Insulator Procede de realisation de contact pour led et structure resultante
FR2992465B1 (fr) 2012-06-22 2015-03-20 Soitec Silicon On Insulator Procede de fabrication collective de leds et structure pour la fabrication collective de leds

Also Published As

Publication number Publication date
US10084011B1 (en) 2018-09-25
FR3064108A1 (fr) 2018-09-21
FR3064110B1 (fr) 2021-04-30
US20180269253A1 (en) 2018-09-20
FR3064110A1 (fr) 2018-09-21

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