JP6196987B2 - 窒化ガリウムナノワイヤに基づくエレクトロニクス - Google Patents
窒化ガリウムナノワイヤに基づくエレクトロニクス Download PDFInfo
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- JP6196987B2 JP6196987B2 JP2014556149A JP2014556149A JP6196987B2 JP 6196987 B2 JP6196987 B2 JP 6196987B2 JP 2014556149 A JP2014556149 A JP 2014556149A JP 2014556149 A JP2014556149 A JP 2014556149A JP 6196987 B2 JP6196987 B2 JP 6196987B2
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- mesa
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- 239000002070 nanowire Substances 0.000 title claims description 163
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Classifications
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Description
a)基板105の主表面(例えば、上面)105A上に成長マスク111を提供する。基板は、III族窒化物ナノワイヤを成長させるのに適した任意の材料、例えば、GaN、シリコン、サファイア、あるいは、シリコン基板上のGaNバッファ層など、1つまたは複数のバッファ層を任意に含んでもよい、AlNウェハであってもよい。成長マスク111は、好ましくは、SiNxまたはSiOxなどの誘電体層である。ただし、他の材料が使用されてもよい。
b)成長マスクに開口部113を形成する。開口部は、好ましくは、それらの直径とそれらの相対的な位置決めの両方の点で、十分に制御される。電子線リソグラフィ(EBL)、ナノインプリントリソグラフィ、光学リソグラフィ、および反応性イオンエッチング(RIE)、または湿式化学エッチング方法を含むがそれらに限定されない、当該技術分野において知られているいくつかの技術を、形成に使用することができる。好ましくは、開口部は直径約100nm、間隔0.5〜5μmである。開口部は、ナノワイヤ110が作成される位置および直径を規定する。
c)CVDまたはMOVPEに基づくプロセスによってナノワイヤを成長させる。好ましくは、基板105の主表面105Aにほぼ垂直に延在する(例えば、表面105Aに対して正確に垂直に、または表面105Aに対する法線の10°以内で延在する)、複数のIII族窒化物半導体ナノワイヤが形成される。好ましくは、ナノワイヤを形成する間、前駆物質源のフローは継続的である。前駆物質源の流量は、成長域内における低い過飽和を達成するように調節される。V/III比は、1〜100の範囲、好ましくは1〜50の範囲、さらにより好ましくは5〜50の範囲であるべきである。このV/III比は、膜成長に使用される比よりも相当に低いことに留意すべきである。
Claims (9)
- 基板と、
前記基板の主表面に実質的に垂直に延在する複数のIII族窒化物半導体ナノワイヤと、
前記複数のナノワイヤそれぞれの周りおよび上にそれぞれ位置する、複数の離散的なIII族窒化物半導体メサと、
前記離散的な各III族窒化物半導体メサの上に位置する少なくとも1つの電極とを備えた半導体デバイスであって、
絶縁性の成長マスクが前記基板の上に位置し、
前記複数のIII族窒化物半導体ナノワイヤが前記成長マスクの開口部から突出し、
各メサが実質的に平坦なc面上面を有しており、
各メサが、上面が前記実質的に平坦なc面上面を形成するIII族窒化物置換層を含み、
前記置換層がGaN層、三元層、もしくは四元層を含み、
前記実質的に平坦なc面上面が、前記メサ内に位置する前記ナノワイヤの上部先端からずれており、
前記ナノワイヤが前記半導体デバイスの能動素子領域の一部ではなく、前記ナノワイヤが外部回路に電気的に接続されず、
前記置換層が、前記半導体デバイスの前記能動素子領域の一部ではない低ドープ半導体または半絶縁性層である、
半導体デバイス。 - 各メサが105Ω*cmを超える抵抗率を有している、請求項1に記載の半導体デバイス。
- 前記実質的に平坦なc面上面が109未満のスレッディング転位を有するか、若しくは、前記複数の離散的なIII族窒化物半導体メサの少なくとも90%が前記実質的に平坦なc面上面にスレッディング転位を有さないか、或いはその両方である、請求項1に記載の半導体デバイス。
- 各メサが、前記半導体デバイスの能動素子領域の一部ではない絶縁性または半絶縁性メサを含み、
各メサが外部回路に電気的に接続されず、
各メサが他のメサに電気的に接続されず、
少なくとも1つの半導体能動素子層が前記実質的に平坦なc面上面の上に位置しており、
前記少なくとも1つの半導体能動素子層が、5×1016cm-2未満の不純物含量を有し、スレッディング転位を実質的に有さない、請求項1に記載の半導体デバイス。 - 前記半導体ナノワイヤがGaNナノワイヤを含み、
前記基板が、AlN、ダイヤモンド、グラフェン、またはアルミナを含む絶縁性または半絶縁性基板を含み、
前記半導体メサが、傾斜した側壁を有する離散的なGaNメサを含み、
前記能動素子領域がダイオードを含み、
各メサの上に2つの電極が位置しており、
少なくとも1つの電極が、前記メサの前記傾斜した側壁の上に少なくとも部分的に位置している、請求項1に記載の半導体デバイス。 - 前記半導体ナノワイヤがGaNナノワイヤを含み、
前記基板が、AlN、ダイヤモンド、グラフェン、またはアルミナを含む絶縁性または半絶縁性基板を含み、
前記半導体メサが、傾斜した側壁を有する離散的なGaNメサを含み、
前記能動素子領域がトランジスタを含み、
各メサの上に3つの電極が位置しており、
少なくとも1つの電極が、前記メサの前記傾斜した側壁の上に少なくとも部分的に位置しており、
2つの電極が、前記メサの異なる傾斜した側壁の上に少なくとも部分的に位置している、請求項1に記載の半導体デバイス。 - トランジスタのゲート電極、または前記ゲート電極およびソース電極を覆う、フィールドプレートをさらに備え、
前記能動素子領域が、共通のゲート線に接続されたゲートを有する複数のトランジスタを含み、
前記複数のトランジスタが、共通のソース線に接続されたソースと、共通のドレイン線に接続されたドレインとを有する、請求項1に記載の半導体デバイス。 - 前記能動素子領域が、直列または並列で電気的に接続された複数のトランジスタおよびダイオードを備えるDC/AC電力変換器を備えているか、カスコード構成の2つ以上のトランジスタおよび/またはダイオードを含むか、若しくは、前記複数のメサのうち少なくとも1つにあるHEMTと、前記基板の上で、前記複数のメサのうち他の少なくとも1つにあるダイオードとを備えるハイブリッドデバイスを含む、請求項1に記載の半導体デバイス。
- 前記メサが、前記基板に平行な面内に六角形の断面を有し、
前記基板がナノワイヤ成長基板または付着されたハンドル基板を含む、請求項1に記載の半導体デバイス。
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Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
US20150255547A1 (en) * | 2012-03-29 | 2015-09-10 | Agency For Science, Technology And Research | III-Nitride High Electron Mobility Transistor Structures and Methods for Fabrication of Same |
GB201211038D0 (en) | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
US9142400B1 (en) | 2012-07-17 | 2015-09-22 | Stc.Unm | Method of making a heteroepitaxial layer on a seed area |
GB201311101D0 (en) | 2013-06-21 | 2013-08-07 | Norwegian Univ Sci & Tech Ntnu | Semiconducting Films |
FR3019188B1 (fr) * | 2014-03-27 | 2017-11-24 | Commissariat Energie Atomique | Procede de croissance d'un element allonge a partir d'un germe forme dans un creux d'une couche ou d'un plot de nucleation |
US9349806B2 (en) * | 2014-07-09 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company Limited and National Chiao-Tung University | Semiconductor structure with template for transition metal dichalcogenides channel material growth |
WO2016099491A1 (en) * | 2014-12-17 | 2016-06-23 | Intel Corporation | Integrated circuit die having reduced defect group iii-nitride structures and methods associated therewith |
US10262855B2 (en) | 2014-12-22 | 2019-04-16 | Globalwafers Co., Ltd. | Manufacture of Group IIIA-nitride layers on semiconductor on insulator structures |
US9818854B2 (en) * | 2015-04-30 | 2017-11-14 | Semiconductor Components Industries, Llc | Electronic device including a bidirectional HEMT |
DK3323152T3 (da) * | 2015-07-13 | 2021-12-20 | Crayonano As | Nanowire-/nanopyramideformede lysdioder og fotodetektorer |
JP6959915B2 (ja) | 2015-07-13 | 2021-11-05 | クラヨナノ エーエス | グラファイト基板上に成長させたナノワイヤ又はナノピラミッド |
EP3544046A1 (en) | 2015-07-31 | 2019-09-25 | Crayonano AS | Processes for growing nanowires or nanopyramids |
US9558942B1 (en) * | 2015-09-29 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | High density nanowire array |
US20170162559A1 (en) * | 2015-12-07 | 2017-06-08 | Dumitru Nicolae LESENCO | Integrated vertical sharp transistor and fabrication method thereof |
CN105552047B (zh) * | 2015-12-14 | 2018-02-27 | 中国电子科技集团公司第五十五研究所 | 一种AlGaN/GaN HEMT晶体管制造方法 |
US10043796B2 (en) * | 2016-02-01 | 2018-08-07 | Qualcomm Incorporated | Vertically stacked nanowire field effect transistors |
US11342477B2 (en) | 2016-02-12 | 2022-05-24 | Hexagem Ab | III-nitride semiconductor devices |
CN109075022A (zh) * | 2016-04-01 | 2018-12-21 | 六边钻公司 | 形成iii-氮化物材料的平坦表面 |
WO2018073013A1 (en) | 2016-10-19 | 2018-04-26 | Hexagem Ab | Forming a planar surface of a iii-nitride material |
GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
CN106981506B (zh) * | 2017-04-19 | 2023-09-29 | 华南理工大学 | 纳米线GaN高电子迁移率晶体管 |
US10249711B2 (en) * | 2017-06-29 | 2019-04-02 | Teledyne Scientific & Imaging, Llc | FET with micro-scale device array |
CN107699863B (zh) * | 2017-09-19 | 2019-07-12 | 北京工业大学 | 一种MPCVD制备GaN纳米线的方法 |
TWI695418B (zh) * | 2017-09-22 | 2020-06-01 | 新唐科技股份有限公司 | 半導體元件及其製造方法 |
KR102520379B1 (ko) | 2017-10-05 | 2023-04-10 | 헥사겜 아베 | 평면의 iii-n 반도체 층을 갖는 반도체 디바이스 및 제작 방법 |
US10418356B2 (en) * | 2017-12-21 | 2019-09-17 | Nanya Technology Corporation | Diode structure and electrostatic discharge protection device including the same |
WO2019206844A1 (en) * | 2018-04-22 | 2019-10-31 | Epinovatech Ab | Reinforced thin-film device |
TWI682053B (zh) | 2018-12-21 | 2020-01-11 | 國立中山大學 | 氮化銦鎵/氮化鎵量子井倒角錐的製造方法 |
US10978632B2 (en) | 2019-01-18 | 2021-04-13 | Microsoft Technology Licensing, Llc | Fabrication of a device |
US10777728B2 (en) | 2019-01-18 | 2020-09-15 | Microsoft Technology Licensing, Llc | Fabrication of a quantum device |
WO2020187986A1 (en) | 2019-03-18 | 2020-09-24 | Hexagem Ab | Semiconductor template and fabrication method |
FR3096172A1 (fr) * | 2019-05-13 | 2020-11-20 | X-Fab France SAS | Transfer Printing for RF Applications |
FR3098012B1 (fr) * | 2019-06-25 | 2023-01-13 | Aledia | Procédé d'homogénéisation de la section de nanofils pour diodes électroluminescentes |
WO2021079434A1 (ja) * | 2019-10-23 | 2021-04-29 | 三菱電機株式会社 | 半導体ウエハおよびその製造方法 |
EP3836227A1 (en) * | 2019-12-11 | 2021-06-16 | Epinovatech AB | Semiconductor layer structure |
EP3866189B1 (en) | 2020-02-14 | 2022-09-28 | Epinovatech AB | A mmic front-end module |
US11177427B2 (en) | 2020-02-14 | 2021-11-16 | International Business Machines Corporation | Fabrication of magnetic nanowire for Majorana qubits |
US20230335400A1 (en) * | 2020-06-22 | 2023-10-19 | Kyocera Corporation | Method for producing semiconductor device, semiconductor device, electronic device, method for producing semiconductor epitaxial substrate, and semiconductor epitaxial substrate |
CN111864020A (zh) * | 2020-07-24 | 2020-10-30 | 武汉大学 | 一种InGaN图形衬底模板及其制备方法和在红光Micro-LED芯片中的应用 |
US20220259766A1 (en) * | 2021-02-16 | 2022-08-18 | Applied Materials, Inc. | Indium-gallium-nitride light emitting diodes with increased quantum efficiency |
EP4101945B1 (en) | 2021-06-09 | 2024-05-15 | Epinovatech AB | A device for performing electrolysis of water, and a system thereof |
CN113809153B (zh) * | 2021-08-11 | 2024-04-16 | 浙江芯科半导体有限公司 | 碳化硅基铝镓氮/氮化镓微米线hemt功率器件及制备方法 |
Family Cites Families (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3489325B2 (ja) * | 1996-03-27 | 2004-01-19 | 株式会社デンソー | ショットキーバリアダイオードおよびその製造方法 |
US5976957A (en) | 1996-10-28 | 1999-11-02 | Sony Corporation | Method of making silicon quantum wires on a substrate |
EP1041610B1 (en) | 1997-10-30 | 2010-12-15 | Sumitomo Electric Industries, Ltd. | GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME |
US6596377B1 (en) | 2000-03-27 | 2003-07-22 | Science & Technology Corporation @ Unm | Thin film product and method of forming |
US7301199B2 (en) | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
AU2002219978A1 (en) | 2000-11-30 | 2002-06-11 | Kyma Technologies, Inc. | Method and apparatus for producing miiin columns and miiin materials grown thereon |
MXPA03008935A (es) | 2001-03-30 | 2004-06-30 | Univ California | Metodos de fabricacion de nanoestructuras y nanocables y dispositivos fabricados a partir de ellos. |
US6709929B2 (en) | 2001-06-25 | 2004-03-23 | North Carolina State University | Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates |
TWI220319B (en) | 2002-03-11 | 2004-08-11 | Solidlite Corp | Nano-wire light emitting device |
JP3968566B2 (ja) * | 2002-03-26 | 2007-08-29 | 日立電線株式会社 | 窒化物半導体結晶の製造方法及び窒化物半導体ウエハ並びに窒化物半導体デバイス |
US20030186677A1 (en) * | 2002-03-27 | 2003-10-02 | Anderson James Lynn | Apparatus and method for directionalized active beacon pinging utilizing personal communication device |
US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
US7355216B2 (en) | 2002-12-09 | 2008-04-08 | The Regents Of The University Of California | Fluidic nanotubes and devices |
JP4428921B2 (ja) | 2002-12-13 | 2010-03-10 | キヤノン株式会社 | ナノ構造体、電子デバイス、及びその製造方法 |
US7608147B2 (en) | 2003-04-04 | 2009-10-27 | Qunano Ab | Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
US7445742B2 (en) | 2003-08-15 | 2008-11-04 | Hewlett-Packard Development Company, L.P. | Imprinting nanoscale patterns for catalysis and fuel cells |
US7354850B2 (en) | 2004-02-06 | 2008-04-08 | Qunano Ab | Directionally controlled growth of nanowhiskers |
JP5194334B2 (ja) * | 2004-05-18 | 2013-05-08 | 住友電気工業株式会社 | Iii族窒化物半導体デバイスの製造方法 |
EP1766108A1 (en) | 2004-06-25 | 2007-03-28 | Btg International Limited | Formation of nanowhiskers on a substrate of dissimilar material |
WO2006078281A2 (en) | 2004-07-07 | 2006-07-27 | Nanosys, Inc. | Systems and methods for harvesting and integrating nanowires |
US7407872B2 (en) | 2004-08-20 | 2008-08-05 | Yale University | Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition |
US7345296B2 (en) | 2004-09-16 | 2008-03-18 | Atomate Corporation | Nanotube transistor and rectifying devices |
US7180103B2 (en) * | 2004-09-24 | 2007-02-20 | Agere Systems Inc. | III-V power field effect transistors |
KR100664986B1 (ko) * | 2004-10-29 | 2007-01-09 | 삼성전기주식회사 | 나노로드를 이용한 질화물계 반도체 소자 및 그 제조 방법 |
US7303631B2 (en) | 2004-10-29 | 2007-12-04 | Sharp Laboratories Of America, Inc. | Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer |
US20060223211A1 (en) | 2004-12-02 | 2006-10-05 | The Regents Of The University Of California | Semiconductor devices based on coalesced nano-rod arrays |
US7309621B2 (en) | 2005-04-26 | 2007-12-18 | Sharp Laboratories Of America, Inc. | Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition |
EP1727216B1 (en) | 2005-05-24 | 2019-04-24 | LG Electronics, Inc. | Rod type light emitting diode and method for fabricating the same |
KR100623271B1 (ko) | 2005-06-24 | 2006-09-12 | 한국과학기술연구원 | 갈륨망간나이트라이드 단결정 나노선의 제조방법 |
KR101106134B1 (ko) | 2005-07-11 | 2012-01-20 | 서울옵토디바이스주식회사 | 나노와이어 형광체를 채택한 발광소자 |
US20070257264A1 (en) | 2005-11-10 | 2007-11-08 | Hersee Stephen D | CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS |
KR100668351B1 (ko) | 2006-01-05 | 2007-01-12 | 삼성코닝 주식회사 | 질화물계 발광소자 및 그 제조방법 |
US7349613B2 (en) | 2006-01-24 | 2008-03-25 | Hewlett-Packard Development Company, L.P. | Photonic crystal devices including gain material and methods for using the same |
AU2007222162B2 (en) | 2006-03-08 | 2013-03-07 | Qunano Ab | Method for metal-free synthesis of epitaxial semiconductor nanowires on Si |
CN101443887B (zh) * | 2006-03-10 | 2011-04-20 | Stc.Unm公司 | Gan纳米线的脉冲式生长及在族ⅲ氮化物半导体衬底材料中的应用和器件 |
AU2007313096B2 (en) * | 2006-03-10 | 2011-11-10 | Unm Rainforest Innovations | Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices |
DE102006013245A1 (de) | 2006-03-22 | 2007-10-04 | Infineon Technologies Ag | Verfahren zur Ausbildung von Öffnungen in einer Matrizenschicht und zur Herstellung von Kondensatoren |
JP2007305954A (ja) * | 2006-03-27 | 2007-11-22 | Nichia Chem Ind Ltd | 電界効果トランジスタ及びその装置 |
US7361522B2 (en) * | 2006-03-28 | 2008-04-22 | Intel Corporation | Growing lower defect semiconductor crystals on highly lattice-mismatched substrates |
JP2008034483A (ja) | 2006-07-26 | 2008-02-14 | Matsushita Electric Works Ltd | 化合物半導体素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法 |
US20080149946A1 (en) | 2006-12-22 | 2008-06-26 | Philips Lumileds Lighting Company, Llc | Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light |
EP2095426A4 (en) | 2006-12-22 | 2012-10-10 | Qunano Ab | NANOELECTRONIC STRUCTURE AND PRODUCTION METHOD THEREOF |
WO2008079076A1 (en) * | 2006-12-22 | 2008-07-03 | Qunano Ab | Led with upstanding nanowire structure and method of producing such |
EP2102899B1 (en) | 2007-01-12 | 2020-11-11 | QuNano AB | Nitride nanowires and method of producing such |
GB0701069D0 (en) * | 2007-01-19 | 2007-02-28 | Univ Bath | Nanostructure template and production of semiconductors using the template |
US8891011B2 (en) | 2007-08-23 | 2014-11-18 | Qualcomm Incorporated | Systems and methods for combining deinterlacing and frame rate decimation for video format conversion |
US8652947B2 (en) * | 2007-09-26 | 2014-02-18 | Wang Nang Wang | Non-polar III-V nitride semiconductor and growth method |
WO2009148253A2 (ko) * | 2008-06-02 | 2009-12-10 | 고려대학교 산학협력단 | 반도체 발광소자 제조용 지지기판 및 상기 지지기판을 이용한 반도체 발광소자 |
WO2010022064A1 (en) * | 2008-08-21 | 2010-02-25 | Nanocrystal Corporation | Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques |
US9224595B2 (en) * | 2008-09-01 | 2015-12-29 | Sophia School Corporation | Semiconductor optical element array and method of manufacturing the same |
CN101685774B (zh) * | 2008-09-24 | 2012-06-13 | 北京邮电大学 | 一种基于界面纳米结构的异质外延生长工艺 |
EP2509119B1 (en) * | 2009-12-01 | 2017-03-08 | National University Corporation Hokkaido University | Light emitting element and method for manufacturing same |
JP2011187901A (ja) * | 2010-03-11 | 2011-09-22 | Canon Inc | 半導体デバイスの製造方法 |
US20110233521A1 (en) | 2010-03-24 | 2011-09-29 | Cree, Inc. | Semiconductor with contoured structure |
US20130087803A1 (en) * | 2011-10-06 | 2013-04-11 | Epowersoft, Inc. | Monolithically integrated hemt and schottky diode |
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CN104205294A (zh) | 2014-12-10 |
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US10236178B2 (en) | 2019-03-19 |
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