EP2095426A4 - Nanoelectronic structure and method of producing such - Google Patents
Nanoelectronic structure and method of producing suchInfo
- Publication number
- EP2095426A4 EP2095426A4 EP07861100A EP07861100A EP2095426A4 EP 2095426 A4 EP2095426 A4 EP 2095426A4 EP 07861100 A EP07861100 A EP 07861100A EP 07861100 A EP07861100 A EP 07861100A EP 2095426 A4 EP2095426 A4 EP 2095426A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- producing
- nanoelectronic structure
- nanoelectronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02606—Nanotubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02653—Vapour-liquid-solid growth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Led Devices (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0602840 | 2006-12-22 | ||
SE0700102 | 2007-01-12 | ||
US11/812,226 US8049203B2 (en) | 2006-12-22 | 2007-06-15 | Nanoelectronic structure and method of producing such |
SE0702404 | 2007-10-26 | ||
PCT/SE2007/001171 WO2008079077A2 (en) | 2006-12-22 | 2007-12-22 | Nanoelectronic structure and method of producing such |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2095426A2 EP2095426A2 (en) | 2009-09-02 |
EP2095426A4 true EP2095426A4 (en) | 2012-10-10 |
Family
ID=40902775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07861100A Withdrawn EP2095426A4 (en) | 2006-12-22 | 2007-12-22 | Nanoelectronic structure and method of producing such |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP2095426A4 (en) |
WO (1) | WO2008079077A2 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE533090C2 (en) * | 2008-07-09 | 2010-06-22 | Qunano Ab | Nanostructured LED |
WO2010027322A1 (en) * | 2008-09-04 | 2010-03-11 | Qunano Ab | Nanostructured photodiode |
CN102449772A (en) * | 2009-03-25 | 2012-05-09 | 格罗有限公司 | A schottky device |
WO2011040012A1 (en) * | 2009-09-30 | 2011-04-07 | 国立大学法人北海道大学 | Tunnel field effect transistor and method for manufacturing same |
CN102782892B (en) | 2010-03-12 | 2015-07-01 | 夏普株式会社 | Light-emitting device manufacturing method, light-emitting device, lighting device, backlight, liquid-crystal panel, display device, display device manufacturing method, display device drive method and liquid-crystal display device |
JP2011211047A (en) * | 2010-03-30 | 2011-10-20 | Sharp Corp | Display device, method of manufacturing display device, and method of driving display device |
WO2012035243A1 (en) * | 2010-09-14 | 2012-03-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Nanowire-based optoelectronic device for light emission |
US8969179B2 (en) | 2010-11-17 | 2015-03-03 | International Business Machines Corporation | Nanowire devices |
US9653286B2 (en) | 2012-02-14 | 2017-05-16 | Hexagem Ab | Gallium nitride nanowire based electronics |
FR2991100B1 (en) * | 2012-05-25 | 2014-06-27 | Commissariat Energie Atomique | NANOFIL-BASED TRANSISTOR, PROCESS FOR PRODUCING THE TRANSISTOR, SEMICONDUCTOR COMPONENT INTEGRATING THE TRANSISTOR, COMPUTER PROGRAM, AND RECORDING MEDIUM ASSOCIATED WITH THE MANUFACTURING METHOD |
JP6290199B2 (en) | 2012-07-06 | 2018-03-07 | クナノ・アーベー | Radial nanowire Esaki diode device and method |
JP6293157B2 (en) * | 2012-10-26 | 2018-03-14 | グロ アーベーGlo Ab | Nanowire-sized photoelectric structure and method for modifying selected portions thereof |
FR3011383B1 (en) * | 2013-09-30 | 2017-05-26 | Commissariat Energie Atomique | METHOD FOR MANUFACTURING OPTOELECTRONIC DEVICES WITH ELECTROLUMINESCENT DIODES |
KR102168936B1 (en) * | 2014-03-28 | 2020-10-22 | 인텔 코포레이션 | Selectively regrown top contact for vertical semiconductor devices |
WO2015147865A1 (en) * | 2014-03-28 | 2015-10-01 | Intel Corporation | Aspect ratio trapping (art) for fabricating vertical semiconductor devices |
FR3098011B1 (en) * | 2019-06-28 | 2022-07-15 | Aledia | PROCESS FOR MANUFACTURING MICROWIRE OR NANOWIRE |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040003839A1 (en) * | 2002-07-05 | 2004-01-08 | Curtin Lawrence F. | Nano photovoltaic/solar cells |
US20040048409A1 (en) * | 2001-08-22 | 2004-03-11 | Goshi Biwa | Nitride semiconductor element and production method for nitride semiconductor element |
US20050253138A1 (en) * | 2004-04-23 | 2005-11-17 | Choi Heon J | Silicon optoelectronic device using silicon nanowire and method for preparing the same |
EP1727216A2 (en) * | 2005-05-24 | 2006-11-29 | LG Electronics, Inc. | Rod type light emitting device and method for fabricating the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3243303B2 (en) * | 1991-10-28 | 2002-01-07 | ゼロックス・コーポレーション | Quantum confined semiconductor light emitting device and method of manufacturing the same |
EP2273552A3 (en) * | 2001-03-30 | 2013-04-10 | The Regents of the University of California | Methods of fabricating nanstructures and nanowires and devices fabricated therefrom |
US7211143B2 (en) * | 2002-12-09 | 2007-05-01 | The Regents Of The University Of California | Sacrificial template method of fabricating a nanotube |
EP1634334A1 (en) * | 2003-04-04 | 2006-03-15 | Startskottet 22286 AB | Nanowhiskers with pn junctions and methods of fabricating thereof |
EP2383785A3 (en) * | 2005-06-16 | 2012-02-22 | QuNano AB | A nanoscale electronic device |
-
2007
- 2007-12-22 WO PCT/SE2007/001171 patent/WO2008079077A2/en active Application Filing
- 2007-12-22 EP EP07861100A patent/EP2095426A4/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040048409A1 (en) * | 2001-08-22 | 2004-03-11 | Goshi Biwa | Nitride semiconductor element and production method for nitride semiconductor element |
US20040003839A1 (en) * | 2002-07-05 | 2004-01-08 | Curtin Lawrence F. | Nano photovoltaic/solar cells |
US20050253138A1 (en) * | 2004-04-23 | 2005-11-17 | Choi Heon J | Silicon optoelectronic device using silicon nanowire and method for preparing the same |
EP1727216A2 (en) * | 2005-05-24 | 2006-11-29 | LG Electronics, Inc. | Rod type light emitting device and method for fabricating the same |
Also Published As
Publication number | Publication date |
---|---|
EP2095426A2 (en) | 2009-09-02 |
WO2008079077A2 (en) | 2008-07-03 |
WO2008079077A3 (en) | 2008-08-21 |
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DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20120911 |
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RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 29/06 20060101AFI20120905BHEP Ipc: B82B 1/00 20060101ALI20120905BHEP Ipc: H01L 21/205 20060101ALI20120905BHEP |
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18D | Application deemed to be withdrawn |
Effective date: 20160701 |