JP2015512151A - 窒化ガリウムナノワイヤに基づくエレクトロニクス - Google Patents
窒化ガリウムナノワイヤに基づくエレクトロニクス Download PDFInfo
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- JP2015512151A JP2015512151A JP2014556149A JP2014556149A JP2015512151A JP 2015512151 A JP2015512151 A JP 2015512151A JP 2014556149 A JP2014556149 A JP 2014556149A JP 2014556149 A JP2014556149 A JP 2014556149A JP 2015512151 A JP2015512151 A JP 2015512151A
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- nanowire
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- mesa
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- 239000002070 nanowire Substances 0.000 title claims abstract description 188
- 229910002601 GaN Inorganic materials 0.000 title claims description 82
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 77
- 239000004065 semiconductor Substances 0.000 claims abstract description 76
- 230000012010 growth Effects 0.000 claims description 163
- 238000000034 method Methods 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 62
- 150000004767 nitrides Chemical class 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 8
- 125000002524 organometallic group Chemical group 0.000 claims description 8
- 229910017083 AlN Inorganic materials 0.000 claims description 7
- 238000006467 substitution reaction Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
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- 239000010703 silicon Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
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- 239000002243 precursor Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
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- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 2
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- 238000005468 ion implantation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
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- 239000000126 substance Substances 0.000 description 2
- -1 AlInGaN Chemical compound 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
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- 239000000843 powder Substances 0.000 description 1
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- 230000002441 reversible effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- MUQNAPSBHXFMHT-UHFFFAOYSA-N tert-butylhydrazine Chemical compound CC(C)(C)NN MUQNAPSBHXFMHT-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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Abstract
Description
a)基板105の主表面(例えば、上面)105A上に成長マスク111を提供する。基板は、III族窒化物ナノワイヤを成長させるのに適した任意の材料、例えば、GaN、シリコン、サファイア、あるいは、シリコン基板上のGaNバッファ層など、1つまたは複数のバッファ層を任意に含んでもよい、AlNウェハであってもよい。成長マスク111は、好ましくは、SiNxまたはSiOxなどの誘電体層である。ただし、他の材料が使用されてもよい。
b)成長マスクに開口部113を形成する。開口部は、好ましくは、それらの直径とそれらの相対的な位置決めの両方の点で、十分に制御される。電子線リソグラフィ(EBL)、ナノインプリントリソグラフィ、光学リソグラフィ、および反応性イオンエッチング(RIE)、または湿式化学エッチング方法を含むがそれらに限定されない、当該技術分野において知られているいくつかの技術を、形成に使用することができる。好ましくは、開口部は直径約100nm、間隔0.5〜5μmである。開口部は、ナノワイヤ110が作成される位置および直径を規定する。
c)CVDまたはMOVPEに基づくプロセスによってナノワイヤを成長させる。好ましくは、基板105の主表面105Aにほぼ垂直に延在する(例えば、表面105Aに対して正確に垂直に、または表面105Aに対する法線の10°以内で延在する)、複数のIII族窒化物半導体ナノワイヤが形成される。好ましくは、ナノワイヤを形成する間、前駆物質源のフローは継続的である。前駆物質源の流量は、成長域内における低い過飽和を達成するように調節される。V/III比は、1〜100の範囲、好ましくは1〜50の範囲、さらにより好ましくは5〜50の範囲であるべきである。このV/III比は、膜成長に使用される比よりも相当に低いことに留意すべきである。
Claims (46)
- 複数の半導体ナノワイヤを基板の上に形成するステップと、
半導体体積要素を各ナノワイヤ上に形成するステップと、
実質的に平坦な上面を有する複数の離散的なベース要素を形成するため、各体積要素を平坦化するステップと、
前記複数のベース要素それぞれの中または上にデバイスを形成するステップとを含む、半導体デバイスを作成する方法。 - 複数の半導体ナノワイヤを形成するステップが、窒素源のフローおよび有機金属源のフローが存在する、ナノワイヤ成長ステップにおいて、CVDまたはVPEによってIII族窒化物ナノワイヤを含む前記ナノワイヤを成長させるステップを含み、
半導体体積要素を形成するステップが、前記窒素源のフローおよび前記有機金属源のフローが存在する、体積要素成長ステップにおいて、CVDまたはVPEによって前記ナノワイヤ上に少なくとも1つのIII族窒化物体積要素を形成するステップを含み、
V/III比が、前記窒素源の流量と前記有機金属源の流量との比を含み、
前記体積要素成長ステップ中のモルV/III比が、前記ナノワイヤ成長ステップ中のモルV/III比よりも高く、
前記体積要素成長ステップが平面成長ステップを含み、前記モルV/III比が前記窒素源の流量と前記有機金属源の流量とのモル比を含む、請求項1に記載の方法。 - 前記ナノワイヤ成長ステップの間、前記窒素源のフローおよび前記有機金属源のフローが継続的である、請求項2に記載の方法。
- 前記体積要素成長ステップの前記モルV/III比が、前記ナノワイヤ成長ステップの前記モルV/III比の少なくとも10倍である、請求項2に記載の方法。
- 前記ナノワイヤ成長ステップの間、前記モルV/III比が1〜100の範囲である、請求項2に記載の方法。
- 前記ナノワイヤ成長ステップの間、前記モルV/III比が1〜50の範囲である、請求項5に記載の方法。
- 前記ナノワイヤ成長ステップの間、前記モルV/III比が5〜50の範囲である、請求項6に記載の方法。
- 前記ナノワイヤ成長ステップの間、前記モルV/III比が一定である、請求項2に記載の方法。
- 前記ナノワイヤが窒化ガリウムナノワイヤであり、前記窒素源がアンモニアであり、前記有機金属源がトリメチルガリウムである、請求項2に記載の方法。
- 前記複数の半導体ナノワイヤを形成するステップおよび前記デバイスを形成するステップが、CVDまたはVPEに基づく選択領域成長技術を利用することを含む、請求項1に記載の方法。
- 前記複数の半導体ナノワイヤを形成するステップが、
成長マスクを含む基板を提供するステップと、
前記成長マスクに開口部を形成するステップと、
前記CVDまたはVPEに基づく選択領域成長技術を利用して、前記成長マスクの前記開口部内で前記半導体ナノワイヤを選択的に成長させるステップとを含み、
前記半導体体積要素を形成するステップが、CVDまたはVPEに基づく選択領域成長技術を利用して、前記ナノワイヤ上に前記体積要素を選択的に成長させるステップを含み、
前記デバイスを形成するステップが、前記平坦化するステップ後に、前記体積要素上に少なくとも1つの高純度半導体デバイス層を選択的に成長させるステップを含む、請求項10に記載の方法。 - 少なくとも1つの高純度デバイス層がドーピングされる、請求項11に記載の方法。
- 前記平坦化するステップが前記体積要素をエッチバックするステップを含む、請求項1に記載の方法。
- 半導体置換層の上面が前記ナノワイヤの上部先端の上に位置し、前記置換層の前記上面が前記ベース要素それぞれの前記上面を形成するように、前記半導体置換層を平坦化した前記体積要素上にエピタキシャル成長させるステップをさらに含む、請求項13に記載の方法。
- 前記エッチバックするステップが、前記半導体ナノワイヤの上部を除去する、請求項13に記載の方法。
- 前記複数の半導体ナノワイヤを形成する前記ステップ、前記半導体体積要素を形成する前記ステップ、平坦化する前記ステップ、および前記デバイスを形成する前記ステップが、1つの中断されない成長行程で行われる、請求項1または13に記載の方法。
- 前記半導体ナノワイヤがGaNナノワイヤを含み、
前記半導体体積要素が、各GaNナノワイヤの周りに形成された離散的な絶縁性または半絶縁性のGaNピラミッドを含み、
各体積要素を平坦化するステップが、実質的に平坦なc面上面および傾斜した側壁を有するメサを備える複数の離散的なGaNベース要素を形成するため、各体積要素に異方性エッチングを施すステップを含み、
前記デバイスがダイオードまたはトランジスタを含む、請求項1に記載の方法。 - 基板と、
前記基板の主表面に実質的に垂直に延在する複数のIII族窒化物半導体ナノワイヤと、
前記複数のナノワイヤそれぞれの周りおよび上にそれぞれ位置する、複数の離散的なIII族窒化物半導体メサと、
各半導体メサの上に位置する少なくとも1つの電極とを備える、半導体デバイス。 - 絶縁性の成長マスクが基板の上に位置し、
前記複数のIII族窒化物半導体ナノワイヤが前記成長マスクの開口部から突出し、
各メサが実質的に平坦なc面上面を有する、請求項18に記載のデバイス。 - 各メサが105Ω*cmを超える抵抗率を有する、請求項19に記載のデバイス。
- 前記実質的に平坦なc面上面がスレッディング転位を実質的に有さない、請求項19に記載のデバイス。
- 前記実質的に平坦なc面上面が109未満のスレッディング転位を有する、請求項21に記載のデバイス。
- 前記複数の離散的なIII族窒化物半導体メサの少なくとも90%が、前記実質的に平坦なc面上面にスレッディング転位を有さない、請求項21に記載のデバイス。
- 各メサが、上面が前記実質的に平坦なc面上面を形成するIII族窒化物置換層を含む、請求項19に記載のデバイス。
- 前記置換層がGaN層を含み、前記実質的に平坦なc面上面が、前記メサ内に位置する前記ナノワイヤの上部先端からずれている、請求項24に記載のデバイス。
- 前記ナノワイヤが前記デバイスの能動素子領域の一部ではなく、前記ナノワイヤが外部回路に電気的に接続されない、請求項25に記載のデバイス。
- 前記置換層が、前記デバイスの前記能動素子領域の一部ではない、低ドープ半導体または半絶縁性層である、請求項26に記載のデバイス。
- 前記置換層が、前記デバイスの前記能動素子領域の一部である半導体層である、請求項26に記載のデバイス。
- 前記置換層が前記デバイスの2DEGを含有する、請求項28に記載のデバイス。
- 各メサが、前記デバイスの能動素子領域の一部ではない絶縁性または半絶縁性メサを含み、各メサが外部回路に電気的に接続されず、各メサが他のメサに電気的に接続されない、請求項19に記載のデバイス。
- 前記実質的に平坦なc面上面の上に位置する少なくとも1つの半導体能動素子層をさらに備える、請求項19に記載のデバイス。
- 前記少なくとも1つの半導体能動素子層が、5×1016cm-2未満の不純物含量を有し、スレッディング転位を実質的に有さない、請求項31に記載のデバイス。
- 前記半導体ナノワイヤがGaNナノワイヤを含み、
前記基板が絶縁性または半絶縁性基板を含み、
前記半導体メサが、傾斜した側壁を有する離散的なGaNメサを含み、
前記デバイスがダイオードまたはトランジスタを含む、請求項18から32の何れか1項に記載のデバイス。 - 前記デバイスがダイオードであり、各メサの上に2つの電極が位置する、請求項33に記載のデバイス。
- 前記デバイスがトランジスタであり、各メサの上に3つの電極が位置する、請求項33に記載のデバイス。
- 前記メサの前記傾斜した側壁の上に少なくとも部分的に位置する、少なくとも1つの電極をさらに備える、請求項33に記載のデバイス。
- 前記メサの異なる傾斜した側壁の上に少なくとも部分的に位置する2つの電極をさらに備える、請求項33に記載のデバイス。
- 前記基板が、AlN、ダイヤモンド、グラフェン、またはアルミナを含む、請求項33から37の何れか1項に記載のデバイス。
- 前記メサが、前記基板に平行な面内に六角形の断面を有する、請求項18から38の何れか1項に記載のデバイス。
- 前記デバイスが、共通のゲート線に接続されたゲートを有する複数のトランジスタを含む、請求項18から39の何れか1項に記載のデバイス。
- 前記複数のトランジスタが、共通のソース線に接続されたソースと、共通のドレイン線に接続されたドレインとを有する、請求項40に記載のデバイス。
- 前記デバイスが、直列または並列で電気的に接続された、複数のトランジスタおよびダイオードを備えるDC/AC電力変換器を備える、請求項18から41の何れか1項に記載のデバイス。
- 前記トランジスタのゲート電極、または前記ゲート電極およびソース電極を覆う、フィールドプレートをさらに備える、請求項40から42の何れか1項に記載のデバイス。
- 前記デバイスが、カスコード構成の2つ以上のトランジスタおよび/またはダイオードを含む、請求項18から43の何れか1項に記載のデバイス。
- 前記デバイスが、前記複数のメサのうち少なくとも1つにあるHEMTと、前記基板の上で、前記複数のメサのうち他の少なくとも1つにあるダイオードとを備えるハイブリッドデバイスを含む、請求項18から43の何れか1項に記載のデバイス。
- 前記基板がナノワイヤ成長基板または付着されたハンドル基板を含む、請求項18から45の何れか1項に記載のデバイス。
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KR102039389B1 (ko) | 2019-11-01 |
US10236178B2 (en) | 2019-03-19 |
EP2815423B1 (en) | 2017-05-24 |
KR20140125426A (ko) | 2014-10-28 |
US9653286B2 (en) | 2017-05-16 |
US20150014631A1 (en) | 2015-01-15 |
EP2815423A4 (en) | 2015-09-09 |
WO2013121289A3 (en) | 2013-12-27 |
CN104205294B (zh) | 2017-05-10 |
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