BR112018000603A2 - fotodetetores e diodos emitindo luz com forma de nanofios/nanopirâmides - Google Patents
fotodetetores e diodos emitindo luz com forma de nanofios/nanopirâmidesInfo
- Publication number
- BR112018000603A2 BR112018000603A2 BR112018000603A BR112018000603A BR112018000603A2 BR 112018000603 A2 BR112018000603 A2 BR 112018000603A2 BR 112018000603 A BR112018000603 A BR 112018000603A BR 112018000603 A BR112018000603 A BR 112018000603A BR 112018000603 A2 BR112018000603 A2 BR 112018000603A2
- Authority
- BR
- Brazil
- Prior art keywords
- nanowires
- electrode
- nanopiramids
- light
- reflective layer
- Prior art date
Links
- 239000002070 nanowire Substances 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
- Optical Head (AREA)
- Fire-Detection Mechanisms (AREA)
- Geophysics And Detection Of Objects (AREA)
Abstract
a presente invenção refere-se a um dispositivo de diodo de emissão de luz compreendendo: uma pluralidade de nanofios ou nanopirâmides crescidos sobre um substrato grafítico, os ditos nanofios ou nanopirâmides tendo uma junção p-n ou p-i-n, um primeiro eletrodo em contato elétrico com o dito substrato grafítico; uma camada refletora de luz em contato com a parte superior de pelo menos uma porção dos ditos nanofios ou nanopirâmides, a dita camada refletora de luz opcionalmente atuando como um segundo eletrodo; opcionalmente um segundo eletrodo em contato elétrico com a parte superior de pelo menos uma porção dos ditos nanofios ou nanopirâmides, o dito segundo eletrodo sendo essencial onde a dita camada refletora de luz não atua como um eletrodo; em que os ditos nanofios ou nanopirâmides compreendem pelo menos um semicondutor de composto de grupo iii-v; e em que em uso luz é emitida do dito dispositivo em uma direção substancialmente oposta à dita camada refletora de luz.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB1512231.0A GB201512231D0 (en) | 2015-07-13 | 2015-07-13 | Device |
GBGB1600164.6A GB201600164D0 (en) | 2016-01-05 | 2016-01-05 | Device |
PCT/EP2016/066694 WO2017009394A1 (en) | 2015-07-13 | 2016-07-13 | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
Publications (1)
Publication Number | Publication Date |
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BR112018000603A2 true BR112018000603A2 (pt) | 2018-09-11 |
Family
ID=56409619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112018000603A BR112018000603A2 (pt) | 2015-07-13 | 2016-07-13 | fotodetetores e diodos emitindo luz com forma de nanofios/nanopirâmides |
Country Status (13)
Country | Link |
---|---|
US (1) | US11594657B2 (pt) |
EP (1) | EP3323152B1 (pt) |
JP (1) | JP7066610B2 (pt) |
KR (1) | KR20180055803A (pt) |
CN (1) | CN108292694A (pt) |
AU (1) | AU2016292849B2 (pt) |
BR (1) | BR112018000603A2 (pt) |
CA (1) | CA2992154A1 (pt) |
DK (1) | DK3323152T3 (pt) |
EA (1) | EA201890167A1 (pt) |
ES (1) | ES2901111T3 (pt) |
TW (1) | TWI772266B (pt) |
WO (1) | WO2017009394A1 (pt) |
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EP3453050B1 (en) | 2016-05-04 | 2022-06-15 | Nanosys, Inc. | Light emitting device containing different color leds and method of making an array of such light emitting devices |
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2016
- 2016-07-13 JP JP2018521702A patent/JP7066610B2/ja active Active
- 2016-07-13 EA EA201890167A patent/EA201890167A1/ru unknown
- 2016-07-13 CA CA2992154A patent/CA2992154A1/en active Pending
- 2016-07-13 CN CN201680052844.8A patent/CN108292694A/zh active Pending
- 2016-07-13 KR KR1020187004150A patent/KR20180055803A/ko not_active IP Right Cessation
- 2016-07-13 US US15/744,467 patent/US11594657B2/en active Active
- 2016-07-13 WO PCT/EP2016/066694 patent/WO2017009394A1/en active Application Filing
- 2016-07-13 TW TW105122161A patent/TWI772266B/zh active
- 2016-07-13 ES ES16738444T patent/ES2901111T3/es active Active
- 2016-07-13 AU AU2016292849A patent/AU2016292849B2/en active Active
- 2016-07-13 EP EP16738444.5A patent/EP3323152B1/en active Active
- 2016-07-13 BR BR112018000603A patent/BR112018000603A2/pt not_active Application Discontinuation
- 2016-07-13 DK DK16738444.5T patent/DK3323152T3/da active
Also Published As
Publication number | Publication date |
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EA201890167A1 (ru) | 2018-07-31 |
EP3323152A1 (en) | 2018-05-23 |
TW201712891A (zh) | 2017-04-01 |
EP3323152B1 (en) | 2021-10-27 |
DK3323152T3 (da) | 2021-12-20 |
CN108292694A (zh) | 2018-07-17 |
AU2016292849B2 (en) | 2019-05-16 |
CA2992154A1 (en) | 2017-01-19 |
US20180204977A1 (en) | 2018-07-19 |
KR20180055803A (ko) | 2018-05-25 |
US11594657B2 (en) | 2023-02-28 |
JP2018521516A (ja) | 2018-08-02 |
ES2901111T3 (es) | 2022-03-21 |
TWI772266B (zh) | 2022-08-01 |
WO2017009394A1 (en) | 2017-01-19 |
JP7066610B2 (ja) | 2022-05-13 |
AU2016292849A1 (en) | 2018-02-15 |
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