BR112015024407A2 - diodo eletroluminescente - Google Patents

diodo eletroluminescente

Info

Publication number
BR112015024407A2
BR112015024407A2 BR112015024407A BR112015024407A BR112015024407A2 BR 112015024407 A2 BR112015024407 A2 BR 112015024407A2 BR 112015024407 A BR112015024407 A BR 112015024407A BR 112015024407 A BR112015024407 A BR 112015024407A BR 112015024407 A2 BR112015024407 A2 BR 112015024407A2
Authority
BR
Brazil
Prior art keywords
layer
semiconductor
doped
forming
doped semiconductor
Prior art date
Application number
BR112015024407A
Other languages
English (en)
Inventor
Bono Hubert
Robin Ivan-Christophe
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of BR112015024407A2 publication Critical patent/BR112015024407A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

resumo “diodo eletroluminescente” diodo eletroluminescente (100) que comporta: - uma primeira camada (102) de semicondutor dopado n apta a formar um cátodo, e uma segunda camada (104) de semicondutor dopado p apta a formar um ânodo, e que formam juntas uma junção p-n do diodo; - uma zona ativa (105) disposta entre a primeira camada e a segunda camada, que compreende pelo menos duas camadas emissivas (106) que comporta um semicondutor e aptas a formar poços quânticos, e uma pluralidade de camadas barreira (108) de semicondutor tais que cada camada emissiva esteja disposta entre duas camadas barreira; - uma camada tampão (110) de semicondutor dopado n disposta entre a primeira camada e a zona ativa, o referido semicondutor dopado n da camada tampão que comporta uma energia de banda proibida inferior ou igual a aproximadamente 97% da energia de banda proibida do semicondutor dopado p da segunda camada.
BR112015024407A 2013-03-28 2014-03-25 diodo eletroluminescente BR112015024407A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1352839A FR3004005B1 (fr) 2013-03-28 2013-03-28 Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
PCT/EP2014/055964 WO2014154690A1 (fr) 2013-03-28 2014-03-25 Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique

Publications (1)

Publication Number Publication Date
BR112015024407A2 true BR112015024407A2 (pt) 2017-07-18

Family

ID=48656114

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112015024407A BR112015024407A2 (pt) 2013-03-28 2014-03-25 diodo eletroluminescente

Country Status (7)

Country Link
US (1) US10944025B2 (pt)
EP (1) EP2979307B1 (pt)
KR (1) KR102156594B1 (pt)
CN (1) CN105122474B (pt)
BR (1) BR112015024407A2 (pt)
FR (1) FR3004005B1 (pt)
WO (1) WO2014154690A1 (pt)

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FR3028671B1 (fr) 2014-11-19 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode electroluminescente a puits quantiques dopes et procede de fabrication associe
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FR3047839B1 (fr) 2016-02-11 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif a structure d'interconnexions pour former un chemin de conduction ou un plan conducteur a forte capacite de decouplage
FR3050872B1 (fr) * 2016-04-27 2019-06-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode electroluminescente comprenant au moins une couche intermediaire de plus grand gap disposee dans au moins une couche barriere de la zone active
US10649233B2 (en) 2016-11-28 2020-05-12 Tectus Corporation Unobtrusive eye mounted display
FR3066045A1 (fr) 2017-05-02 2018-11-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode electroluminescente comprenant des couches de conversion en longueur d'onde
FR3075468B1 (fr) * 2017-12-19 2019-12-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un dispositif optoelectronique par report d'une structure de conversion sur une structure d'emission
FR3077160B1 (fr) * 2018-01-19 2022-01-21 Commissariat Energie Atomique Dispositif optoelectronique comportant une grille et une cathode couplees l'une a l'autre
US10673414B2 (en) 2018-02-05 2020-06-02 Tectus Corporation Adaptive tuning of a contact lens
US10505394B2 (en) 2018-04-21 2019-12-10 Tectus Corporation Power generation necklaces that mitigate energy absorption in the human body
US10895762B2 (en) 2018-04-30 2021-01-19 Tectus Corporation Multi-coil field generation in an electronic contact lens system
US10838239B2 (en) 2018-04-30 2020-11-17 Tectus Corporation Multi-coil field generation in an electronic contact lens system
US10790700B2 (en) 2018-05-18 2020-09-29 Tectus Corporation Power generation necklaces with field shaping systems
US11137622B2 (en) 2018-07-15 2021-10-05 Tectus Corporation Eye-mounted displays including embedded conductive coils
US10529107B1 (en) 2018-09-11 2020-01-07 Tectus Corporation Projector alignment in a contact lens
US10838232B2 (en) 2018-11-26 2020-11-17 Tectus Corporation Eye-mounted displays including embedded solenoids
US10644543B1 (en) 2018-12-20 2020-05-05 Tectus Corporation Eye-mounted display system including a head wearable object
US10944290B2 (en) 2019-08-02 2021-03-09 Tectus Corporation Headgear providing inductive coupling to a contact lens

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Also Published As

Publication number Publication date
WO2014154690A1 (fr) 2014-10-02
EP2979307A1 (fr) 2016-02-03
KR102156594B1 (ko) 2020-09-16
EP2979307B1 (fr) 2019-07-24
FR3004005B1 (fr) 2016-11-25
CN105122474A (zh) 2015-12-02
CN105122474B (zh) 2018-02-09
KR20150135500A (ko) 2015-12-02
US20160049544A1 (en) 2016-02-18
US10944025B2 (en) 2021-03-09
FR3004005A1 (fr) 2014-10-03

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Legal Events

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B06F Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette]
B06U Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette]
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B11B Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements