FR3098019B1 - Dispositif optoélectronique comprenant des éléments semi-conducteurs tridimensionnels et procédé pour sa fabrication - Google Patents

Dispositif optoélectronique comprenant des éléments semi-conducteurs tridimensionnels et procédé pour sa fabrication Download PDF

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Publication number
FR3098019B1
FR3098019B1 FR1906901A FR1906901A FR3098019B1 FR 3098019 B1 FR3098019 B1 FR 3098019B1 FR 1906901 A FR1906901 A FR 1906901A FR 1906901 A FR1906901 A FR 1906901A FR 3098019 B1 FR3098019 B1 FR 3098019B1
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France
Prior art keywords
iii
compound
manufacture
optoelectronic device
semiconductor elements
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Active
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FR1906901A
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English (en)
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FR3098019A1 (fr
Inventor
Olga Kryliouk
Jérôme Napierala
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Aledia
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Aledia
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Filing date
Publication date
Priority to FR1906901A priority Critical patent/FR3098019B1/fr
Application filed by Aledia filed Critical Aledia
Priority to TW109121104A priority patent/TW202109906A/zh
Priority to CN202080059343.9A priority patent/CN114270542A/zh
Priority to PCT/EP2020/067298 priority patent/WO2020260181A2/fr
Priority to US17/621,676 priority patent/US20220352415A1/en
Priority to EP20733304.8A priority patent/EP3991212A2/fr
Priority to KR1020227001956A priority patent/KR20220025818A/ko
Publication of FR3098019A1 publication Critical patent/FR3098019A1/fr
Application granted granted Critical
Publication of FR3098019B1 publication Critical patent/FR3098019B1/fr
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Dispositif optoélectronique comprenant des éléments semi-conducteurs tridimensionnels et procédé pour sa fabrication La présente description concerne un procédé de fabrication d’un dispositif (70) comprenant la formation, par dépôt chimique en phase vapeur métallo-organique, MOCVD, d’éléments semi-conducteurs en forme de fils, coniques ou tronconiques (34) en un composé III-V, dopé ou non dopé, chaque élément semi-conducteur s’étendant suivant un axe (C) et comprenant une partie supérieure (35), et la formation par dépôt chimique en phase vapeur assisté par plasma à distance, RPCVD, ou par épitaxie par jets moléculaires, MBE, ou par épitaxie en phase vapeur hybride, HVPE, pour chaque élément semi-conducteur, d’une région active (44) seulement sur ladite partie supérieure comprenant au moins une première couche semi-conductrice constituée du composé III-V et une deuxième couche semi-conductrice constituée du composé III-V et d’un élément du groupe III additionnel. Figure pour l'abrégé : Fig. 1
FR1906901A 2019-06-25 2019-06-25 Dispositif optoélectronique comprenant des éléments semi-conducteurs tridimensionnels et procédé pour sa fabrication Active FR3098019B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1906901A FR3098019B1 (fr) 2019-06-25 2019-06-25 Dispositif optoélectronique comprenant des éléments semi-conducteurs tridimensionnels et procédé pour sa fabrication
CN202080059343.9A CN114270542A (zh) 2019-06-25 2020-06-22 包括三维半导体元件的光电器件和制造所述器件的方法
PCT/EP2020/067298 WO2020260181A2 (fr) 2019-06-25 2020-06-22 Dispositif optoélectronique comprenant des éléments semiconducteurs tridimensionnels et procédé de fabrication dudit dispositif
US17/621,676 US20220352415A1 (en) 2019-06-25 2020-06-22 Optoelectronic device comprising three-dimensional semiconductor elements and method for manufacturing said device
TW109121104A TW202109906A (zh) 2019-06-25 2020-06-22 包含三維半導體元件的光電裝置及用於製造該裝置的方法
EP20733304.8A EP3991212A2 (fr) 2019-06-25 2020-06-22 Dispositif optoélectronique comprenant des éléments semiconducteurs tridimensionnels et procédé de fabrication dudit dispositif
KR1020227001956A KR20220025818A (ko) 2019-06-25 2020-06-22 3차원 반도체 구성요소를 구비하는 광전자 장치와 상기 장치를 제조하는 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1906901 2019-06-25
FR1906901A FR3098019B1 (fr) 2019-06-25 2019-06-25 Dispositif optoélectronique comprenant des éléments semi-conducteurs tridimensionnels et procédé pour sa fabrication

Publications (2)

Publication Number Publication Date
FR3098019A1 FR3098019A1 (fr) 2021-01-01
FR3098019B1 true FR3098019B1 (fr) 2022-05-20

Family

ID=68581903

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1906901A Active FR3098019B1 (fr) 2019-06-25 2019-06-25 Dispositif optoélectronique comprenant des éléments semi-conducteurs tridimensionnels et procédé pour sa fabrication

Country Status (7)

Country Link
US (1) US20220352415A1 (fr)
EP (1) EP3991212A2 (fr)
KR (1) KR20220025818A (fr)
CN (1) CN114270542A (fr)
FR (1) FR3098019B1 (fr)
TW (1) TW202109906A (fr)
WO (1) WO2020260181A2 (fr)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7132677B2 (en) * 2004-02-13 2006-11-07 Dongguk University Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same
JP5003527B2 (ja) * 2008-02-22 2012-08-15 住友電気工業株式会社 Ｉｉｉ族窒化物発光素子、及びｉｉｉ族窒化物系半導体発光素子を作製する方法
CN102187479B (zh) * 2008-09-01 2014-06-18 学校法人上智学院 半导体光学元件阵列及其制造方法
US20100273291A1 (en) * 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
US20110104843A1 (en) * 2009-07-31 2011-05-05 Applied Materials, Inc. Method of reducing degradation of multi quantum well (mqw) light emitting diodes
US20110244663A1 (en) * 2010-04-01 2011-10-06 Applied Materials, Inc. Forming a compound-nitride structure that includes a nucleation layer
FR3000612B1 (fr) 2012-12-28 2016-05-06 Commissariat Energie Atomique Dispositif optoelectronique a microfils ou nanofils
CN108292694A (zh) * 2015-07-13 2018-07-17 科莱约纳诺公司 纳米线/纳米锥形状的发光二极管及光检测器
FR3044470B1 (fr) * 2015-11-30 2018-03-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique comportant des structures semiconductrices tridimensionnelles en configuration axiale
CN105720157A (zh) * 2016-02-26 2016-06-29 中国科学院半导体研究所 氮化镓基微纳米锥结构发光二极管及其制备方法
FR3068517B1 (fr) * 2017-06-30 2019-08-09 Aledia Dispositif optoelectronique comportant des structures semiconductrices tridimensionnelles en configuration axiale

Also Published As

Publication number Publication date
TW202109906A (zh) 2021-03-01
KR20220025818A (ko) 2022-03-03
EP3991212A2 (fr) 2022-05-04
WO2020260181A2 (fr) 2020-12-30
US20220352415A1 (en) 2022-11-03
FR3098019A1 (fr) 2021-01-01
CN114270542A (zh) 2022-04-01
WO2020260181A3 (fr) 2021-06-03

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