ATE486374T1 - Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür - Google Patents

Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür

Info

Publication number
ATE486374T1
ATE486374T1 AT03818003T AT03818003T ATE486374T1 AT E486374 T1 ATE486374 T1 AT E486374T1 AT 03818003 T AT03818003 T AT 03818003T AT 03818003 T AT03818003 T AT 03818003T AT E486374 T1 ATE486374 T1 AT E486374T1
Authority
AT
Austria
Prior art keywords
high brightness
micro
nitride
present
microlight
Prior art date
Application number
AT03818003T
Other languages
English (en)
Inventor
Sang-Kyu Kang
Original Assignee
Kang Sang Kyu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kang Sang Kyu filed Critical Kang Sang Kyu
Application granted granted Critical
Publication of ATE486374T1 publication Critical patent/ATE486374T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Led Device Packages (AREA)
AT03818003T 2003-08-08 2003-08-08 Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür ATE486374T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2003/001600 WO2005015647A1 (en) 2003-08-08 2003-08-08 Nitride micro light emitting diode with high brightness and method of manufacturing the same

Publications (1)

Publication Number Publication Date
ATE486374T1 true ATE486374T1 (de) 2010-11-15

Family

ID=34132086

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03818003T ATE486374T1 (de) 2003-08-08 2003-08-08 Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür

Country Status (9)

Country Link
US (2) US7595511B2 (de)
EP (1) EP1652238B1 (de)
JP (1) JP4755901B2 (de)
CN (1) CN100459180C (de)
AT (1) ATE486374T1 (de)
AU (1) AU2003257713A1 (de)
DE (1) DE60334745D1 (de)
ES (1) ES2356606T3 (de)
WO (1) WO2005015647A1 (de)

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DE60334745D1 (de) 2010-12-09
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US7906787B2 (en) 2011-03-15
JP2007519214A (ja) 2007-07-12
US7595511B2 (en) 2009-09-29
EP1652238A4 (de) 2007-03-21
JP4755901B2 (ja) 2011-08-24
EP1652238A1 (de) 2006-05-03
ES2356606T3 (es) 2011-04-11
EP1652238B1 (de) 2010-10-27
US20090309107A1 (en) 2009-12-17
CN100459180C (zh) 2009-02-04
WO2005015647A1 (en) 2005-02-17

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