DE60334745D1 - Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür - Google Patents

Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür

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Publication number
DE60334745D1
DE60334745D1 DE60334745T DE60334745T DE60334745D1 DE 60334745 D1 DE60334745 D1 DE 60334745D1 DE 60334745 T DE60334745 T DE 60334745T DE 60334745 T DE60334745 T DE 60334745T DE 60334745 D1 DE60334745 D1 DE 60334745D1
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DE
Germany
Prior art keywords
manufacturing
micro
high brightness
present
nitrid
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Expired - Lifetime
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DE60334745T
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English (en)
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Sang-Kyu Kang
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
DE60334745T 2003-08-08 2003-08-08 Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür Expired - Lifetime DE60334745D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2003/001600 WO2005015647A1 (en) 2003-08-08 2003-08-08 Nitride micro light emitting diode with high brightness and method of manufacturing the same

Publications (1)

Publication Number Publication Date
DE60334745D1 true DE60334745D1 (de) 2010-12-09

Family

ID=34132086

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60334745T Expired - Lifetime DE60334745D1 (de) 2003-08-08 2003-08-08 Nitrid-mikrolicht-emissionsdiode mit grosser helligkeit und herstellungsverfahren dafür

Country Status (9)

Country Link
US (2) US7595511B2 (de)
EP (1) EP1652238B1 (de)
JP (1) JP4755901B2 (de)
CN (1) CN100459180C (de)
AT (1) ATE486374T1 (de)
AU (1) AU2003257713A1 (de)
DE (1) DE60334745D1 (de)
ES (1) ES2356606T3 (de)
WO (1) WO2005015647A1 (de)

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US20060208273A1 (en) 2006-09-21
ATE486374T1 (de) 2010-11-15
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US7906787B2 (en) 2011-03-15
US7595511B2 (en) 2009-09-29
CN100459180C (zh) 2009-02-04
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