SG10201405683YA - Emission Source And Method Of Forming The Same - Google Patents
Emission Source And Method Of Forming The SameInfo
- Publication number
- SG10201405683YA SG10201405683YA SG10201405683YA SG10201405683YA SG10201405683YA SG 10201405683Y A SG10201405683Y A SG 10201405683YA SG 10201405683Y A SG10201405683Y A SG 10201405683YA SG 10201405683Y A SG10201405683Y A SG 10201405683YA SG 10201405683Y A SG10201405683Y A SG 10201405683YA
- Authority
- SG
- Singapore
- Prior art keywords
- forming
- same
- emission source
- emission
- source
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1645—Solid materials characterised by a crystal matrix halide
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
- H01S3/092—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of flash lamp
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1628—Solid materials characterised by a semiconducting matrix
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/17—Solid materials amorphous, e.g. glass
- H01S3/178—Solid materials amorphous, e.g. glass plastic
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361876940P true | 2013-09-12 | 2013-09-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201405683YA true SG10201405683YA (en) | 2015-04-29 |
Family
ID=52625590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201405683YA SG10201405683YA (en) | 2013-09-12 | 2014-09-12 | Emission Source And Method Of Forming The Same |
Country Status (2)
Country | Link |
---|---|
US (1) | US9966726B2 (en) |
SG (1) | SG10201405683YA (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
PL229151B1 (en) * | 2015-11-16 | 2018-06-29 | Inst Niskich Temperatur I Badan Strukturalnych Im Wlodzimierza Trzebiatowskiego Polskiej Akademii Na | Source of white light and method for generating white light |
KR20170139727A (en) | 2016-06-09 | 2017-12-20 | 삼성디스플레이 주식회사 | Lighting device |
CN111757920A (en) * | 2017-10-10 | 2020-10-09 | 佛罗里达州立大学研究基金会有限公司 | Organic-inorganic hybrid monolithic assembly and method |
WO2019217771A1 (en) * | 2018-05-11 | 2019-11-14 | University Of Washington | Laser with perovskite gain layer |
CN109378709A (en) * | 2018-12-13 | 2019-02-22 | 中国科学院半导体研究所 | Flexible VCSEL array device and preparation method thereof |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3A (en) * | 1836-08-11 | Thomas blanchard | ||
US3451009A (en) * | 1966-03-04 | 1969-06-17 | Rca Corp | Luminescent material and laser apparatus utilizing said material |
US3949319A (en) * | 1974-09-12 | 1976-04-06 | Bell Telephone Laboratories, Incorporated | High energy storage lasers employing perovskites containing rare earths |
US5023877A (en) * | 1990-06-29 | 1991-06-11 | The United States Of America As Represented By The Secretary Of The Air Force | Miniature, optically pumped narrow line solid state laser |
JP2004285160A (en) * | 2003-03-20 | 2004-10-14 | Konica Minolta Holdings Inc | Photostimulable phosphor, its preparation method, and radiation-image conversion panel |
AT486374T (en) * | 2003-08-08 | 2010-11-15 | Kang Sang Kyu | Nitrid microspheric emission diode with great brightness and method of manufacturing thereof |
EP2004775B1 (en) * | 2006-03-21 | 2015-05-06 | Omnipv, Inc. | Luminescent materials that emit light in the visible range or the near infrared range |
US20090056791A1 (en) | 2007-06-22 | 2009-03-05 | William Matthew Pfenninger | Solar modules with enhanced efficiencies via use of spectral concentrators |
JP2011071334A (en) * | 2009-09-25 | 2011-04-07 | Toshiba Corp | Nonvolatile semiconductor memory device |
US9181475B2 (en) * | 2012-02-21 | 2015-11-10 | Northwestern University | Photoluminescent compounds |
US9608145B2 (en) * | 2012-03-14 | 2017-03-28 | Robbie J. Jorgenson | Materials, structures, and methods for optical and electrical III-nitride semiconductor devices |
-
2014
- 2014-09-12 SG SG10201405683YA patent/SG10201405683YA/en unknown
- 2014-09-12 US US14/484,927 patent/US9966726B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9966726B2 (en) | 2018-05-08 |
US20150071319A1 (en) | 2015-03-12 |
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