JP3871668B2 - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP3871668B2 JP3871668B2 JP2003301289A JP2003301289A JP3871668B2 JP 3871668 B2 JP3871668 B2 JP 3871668B2 JP 2003301289 A JP2003301289 A JP 2003301289A JP 2003301289 A JP2003301289 A JP 2003301289A JP 3871668 B2 JP3871668 B2 JP 3871668B2
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- Prior art keywords
- light
- light emitting
- phosphor
- region
- emitting device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Description
12、102 リードフレーム
13、111 赤色(R)蛍光体
14、112 緑色(G)蛍光体
15、113 青色(B)蛍光体
16、106 n側金ワイヤ
17、107 p側金ワイヤ
22 基板
25 樹脂
30 レンズ
62 遮光板
301 サファイア基板
302 n型GaNコンタクト層
303 n型AlGaNクラッド層
304 InGaN活性層
305 p型AlGaNクラッド層
306 p型GaNコンタクト層
307 p側電極
308 n側電極
701 GaN基板
Claims (4)
- 実装部材と、前記実装部材にマウントされた発光素子と、前記発光素子から放出される1次光を吸収して前記1次光とは異なる第1の波長の光を放出する第1の蛍光体と、
前記発光素子から放出される1次光を吸収して前記1次光とは異なる第2の波長の光を放出する第2の蛍光体と、
を備えた半導体発光装置であって、
前記第1の蛍光体は、前記発光素子の光放出面の第1の領域の上に設けられ、
前記第2の蛍光体は、前記発光素子の光放出面の前記第1の領域とは異なる第2の領域の上に設けられ、
前記第1の領域と前記第2の領域は、遮光板によって分割されていることを特徴とする半導体発光装置。 - 前記発光素子が第1領域と第2領域とを有し、
前記第1領域は、第1導電型の半導体と電気的に接続された第1の活性層と、前記第1の活性層上に形成された第1の第2導電型半導体層と、を有し、
前記第2領域は、前記第1導電型の半導体と電気的に接続された第2の活性層と、前記第2の活性層上に形成された第2の第2導電型半導体層と、を有し、
前記第1導電型の半導体に電気的に接続された第1電極が形成され、
前記第1の第2導電型半導体層に電気的に接続された第1の第2電極が形成され、
前記第2の第2導電型半導体層に電気的に接続された第2の第2電極が形成され、
前記第1電極と前記第1の第2電極からの電流注入により前記第1の活性層から前記1次光が放出されて前記第1の蛍光体が励起され、
前記第1電極と前記第2の第2電極からの電流注入により前記第2の活性層から前記1次光が放出されて前記第2の蛍光体が励起されることを特徴とする請求項1記載の半導体発光装置。 - 前記半導体発光装置が、前記発光素子から放出される1次光を吸収して前記1次光とは異なる第3の波長の光を放出する第3の蛍光体をさらに備え、
前記第3の蛍光体が、前記発光素子の光放出面の前記第1の領域および前記第2の領域とは異なる第3の領域の上に設けられ、
前記第3の領域が、遮光板によって前記第1の領域および前記第2の領域と分割されており、
前記半導体発光素子がさらに第3領域を有し、
前記第3領域は、前記第1導電型の半導体と電気的に接続された第3の活性層と、前記第3の活性層上に形成された第3の第2導電型半導体層と、を有し、
前記第3の第2導電型半導体層に電気的に接続された第3の第2電極が形成され、
前記第1電極と前記第3の第2電極からの電流注入により前記第3の活性層から前記1次光が放出されて前記第3の蛍光体が励起されることを特徴とする請求項2記載の半導体発光装置。 - 前記1次光が紫外光であり、前記第1の波長の光が青色光であり、前記第2の波長の光が緑色光であり、前記第3の波長の光が赤色光であることを特徴とする請求項3記載の半導体発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003301289A JP3871668B2 (ja) | 2003-08-26 | 2003-08-26 | 半導体発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003301289A JP3871668B2 (ja) | 2003-08-26 | 2003-08-26 | 半導体発光装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19902098A Division JP3486345B2 (ja) | 1998-07-14 | 1998-07-14 | 半導体発光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006190556A Division JP2006295215A (ja) | 2006-07-11 | 2006-07-11 | 半導体発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004048040A JP2004048040A (ja) | 2004-02-12 |
JP3871668B2 true JP3871668B2 (ja) | 2007-01-24 |
Family
ID=31712645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003301289A Expired - Fee Related JP3871668B2 (ja) | 2003-08-26 | 2003-08-26 | 半導体発光装置 |
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JP (1) | JP3871668B2 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7250715B2 (en) * | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
EP1566426B1 (en) * | 2004-02-23 | 2015-12-02 | Philips Lumileds Lighting Company LLC | Phosphor converted light emitting device |
JP2005244076A (ja) * | 2004-02-27 | 2005-09-08 | Matsushita Electric Works Ltd | 発光装置 |
EP1780592A4 (en) | 2004-06-30 | 2014-07-09 | Mitsubishi Chem Corp | LIGHT-EMITTING COMPONENT, BACKLIGHT UNIT, DISPLAY UNIT AND DISPLAY UNIT |
JP5320655B2 (ja) * | 2004-06-30 | 2013-10-23 | 三菱化学株式会社 | 発光装置、照明、表示装置用バックライトユニット及び表示装置 |
JP4579654B2 (ja) | 2004-11-11 | 2010-11-10 | パナソニック株式会社 | 半導体発光装置及びその製造方法、並びに半導体発光装置を備えた照明モジュール及び照明装置 |
JP2006278567A (ja) * | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | Ledユニット |
JP2007110060A (ja) * | 2005-09-15 | 2007-04-26 | Nichia Chem Ind Ltd | 発光装置 |
JP2011091414A (ja) * | 2005-11-30 | 2011-05-06 | Sharp Corp | 発光装置 |
JP4769132B2 (ja) * | 2005-11-30 | 2011-09-07 | シャープ株式会社 | 発光装置 |
JP2007273562A (ja) | 2006-03-30 | 2007-10-18 | Toshiba Corp | 半導体発光装置 |
KR100856834B1 (ko) * | 2006-07-21 | 2008-09-05 | (주) 아모센스 | 형광체 시트를 갖춘 반도체 패키지 및 그 제조방법 |
US8541798B2 (en) * | 2006-09-27 | 2013-09-24 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device, and backlight and display device comprising the semiconductor light emitting device |
JP4520972B2 (ja) * | 2006-11-28 | 2010-08-11 | Dowaエレクトロニクス株式会社 | 発光装置及びその製造方法 |
JP4859050B2 (ja) * | 2006-11-28 | 2012-01-18 | Dowaエレクトロニクス株式会社 | 発光装置及びその製造方法 |
TWI463690B (zh) * | 2008-03-04 | 2014-12-01 | Toshiba Kk | A semiconductor light emitting device, and a semiconductor light emitting device |
KR100973238B1 (ko) * | 2008-03-26 | 2010-07-30 | 서울반도체 주식회사 | 형광체 코팅방법 및 장치 그리고 형광체 코팅층을 포함하는led |
JP5372868B2 (ja) * | 2010-08-06 | 2013-12-18 | Dowaエレクトロニクス株式会社 | 発光装置及びその製造方法 |
-
2003
- 2003-08-26 JP JP2003301289A patent/JP3871668B2/ja not_active Expired - Fee Related
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