JP2006295215A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP2006295215A JP2006295215A JP2006190556A JP2006190556A JP2006295215A JP 2006295215 A JP2006295215 A JP 2006295215A JP 2006190556 A JP2006190556 A JP 2006190556A JP 2006190556 A JP2006190556 A JP 2006190556A JP 2006295215 A JP2006295215 A JP 2006295215A
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- Prior art keywords
- light emitting
- phosphor
- emitting device
- light
- resin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
【解決手段】実装部材と、前記実装部材にマウントされた発光素子と、前記発光素子上に設けられ、実質的に平坦な上面を有する樹脂層と、前記樹脂層上に設けられ、前記発光素子から放出される1次光を吸収して前記1次光とは異なる波長の2次光を放出する第1の蛍光体を有し、前記実質的に平坦な上面の上において一定の厚みを有する第1樹脂層と、前記第1樹脂層上に設けられ、前記発光素子から放出される1次光を吸収して前記1次光とは異なる波長の2次光を放出し、前記第1の蛍光体とは異なる第2の蛍光体を有し、前記実質的に平坦な上面の上において一定の厚みを有する第2樹脂層と、を有することを特徴とする半導体発光装置を提供する。
【選択図】図1
Description
12、102 リードフレーム
13、111 赤色(R)蛍光体
14、112 緑色(G)蛍光体
15、113 青色(B)蛍光体
16、106 n側金ワイヤ
17、107 p側金ワイヤ
22 基板
25 樹脂
30 レンズ
62 遮光板
301 サファイア基板
302 n型GaNコンタクト層
303 n型AlGaNクラッド層
304 InGaN活性層
305 p型AlGaNクラッド層
306 p型GaNコンタクト層
307 p側電極
308 n側電極
701 GaN基板
Claims (4)
- 実装部材と、
前記実装部材にマウントされた発光素子と、
前記発光素子上に設けられ、実質的に平坦な上面を有する樹脂層と、
前記樹脂層上に設けられ、前記発光素子から放出される1次光を吸収して前記1次光とは異なる波長の2次光を放出する第1の蛍光体を有し、前記実質的に平坦な上面の上において一定の厚みを有する第1樹脂層と、
前記第1樹脂層上に設けられ、前記発光素子から放出される1次光を吸収して前記1次光とは異なる波長の2次光を放出し、前記第1の蛍光体とは異なる第2の蛍光体を有し、前記実質的に平坦な上面の上において一定の厚みを有する第2樹脂層と、
を有することを特徴とする半導体発光装置。 - カップ部を有する実装部材と、
前記カップ部の底部にマウントされた発光素子と、
前記カップ部の前記発光素子の上面よりも高い位置まで埋め込まれ、実質的に平坦な上面を有する樹脂層と、
前記樹脂層上に設けられ、前記発光素子から放出される1次光を吸収して前記1次光とは異なる波長の2次光を放出する第1の蛍光体を有し、一定の厚みを有する第1樹脂層と、
前記第1樹脂層上に設けられ、前記発光素子から放出される1次光を吸収して前記1次光とは異なる波長を有する2次光を放出し、前記第1の蛍光体とは異なる第2の蛍光体を有し、一定の厚みを有する第2樹脂層と、
を有することを特徴とする半導体発光装置。 - 前記第2樹脂層上に、前記発光素子から放出される1次光を吸収して前記1次光とは異なる波長を有する2次光を放出し、前記第1及び第2の蛍光体とは異なる第3の蛍光体を有し、一定の厚みを有する第3樹脂層を有することを特徴とする請求項1または2に記載の半導体発光装置。
- 前記第1の蛍光体が、赤色蛍光体であり、
前記第2の蛍光体が、緑色蛍光体であり、
前記第3の蛍光体が、青色蛍光体であることを特徴とする請求項3に記載の半導体発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006190556A JP2006295215A (ja) | 2006-07-11 | 2006-07-11 | 半導体発光装置 |
Applications Claiming Priority (1)
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JP2006190556A JP2006295215A (ja) | 2006-07-11 | 2006-07-11 | 半導体発光装置 |
Related Parent Applications (1)
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JP2003301289A Division JP3871668B2 (ja) | 2003-08-26 | 2003-08-26 | 半導体発光装置 |
Publications (1)
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JP2006295215A true JP2006295215A (ja) | 2006-10-26 |
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JP2006190556A Pending JP2006295215A (ja) | 2006-07-11 | 2006-07-11 | 半導体発光装置 |
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JP (1) | JP2006295215A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008166782A (ja) * | 2006-12-26 | 2008-07-17 | Seoul Semiconductor Co Ltd | 発光素子 |
US10989985B2 (en) | 2019-06-07 | 2021-04-27 | Panasonic Intellectual Property Management Co., Ltd. | Wavelength converter |
US11437773B2 (en) | 2019-06-07 | 2022-09-06 | Panasonic Intellectual Property Management Co., Ltd. | Wavelength conversion device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0348368U (ja) * | 1989-09-19 | 1991-05-09 | ||
JPH09283790A (ja) * | 1996-04-16 | 1997-10-31 | Toshiba Corp | 立体配線型光結合装置及び反射型光結合装置 |
JPH10112557A (ja) * | 1996-10-08 | 1998-04-28 | Nichia Chem Ind Ltd | 発光装置及びそれを用いた表示装置 |
-
2006
- 2006-07-11 JP JP2006190556A patent/JP2006295215A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0348368U (ja) * | 1989-09-19 | 1991-05-09 | ||
JPH09283790A (ja) * | 1996-04-16 | 1997-10-31 | Toshiba Corp | 立体配線型光結合装置及び反射型光結合装置 |
JPH10112557A (ja) * | 1996-10-08 | 1998-04-28 | Nichia Chem Ind Ltd | 発光装置及びそれを用いた表示装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008166782A (ja) * | 2006-12-26 | 2008-07-17 | Seoul Semiconductor Co Ltd | 発光素子 |
US8405304B2 (en) | 2006-12-26 | 2013-03-26 | Seoul Semiconductor Co., Ltd. | Light emtting device |
US8569944B2 (en) | 2006-12-26 | 2013-10-29 | Seoul Semiconductor Co., Ltd. | Light emitting device |
US10989985B2 (en) | 2019-06-07 | 2021-04-27 | Panasonic Intellectual Property Management Co., Ltd. | Wavelength converter |
US11437773B2 (en) | 2019-06-07 | 2022-09-06 | Panasonic Intellectual Property Management Co., Ltd. | Wavelength conversion device |
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