JP2008235824A - 発光装置およびその製造方法 - Google Patents
発光装置およびその製造方法 Download PDFInfo
- Publication number
- JP2008235824A JP2008235824A JP2007077313A JP2007077313A JP2008235824A JP 2008235824 A JP2008235824 A JP 2008235824A JP 2007077313 A JP2007077313 A JP 2007077313A JP 2007077313 A JP2007077313 A JP 2007077313A JP 2008235824 A JP2008235824 A JP 2008235824A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting device
- sealing body
- emitting elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 63
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 41
- 238000007789 sealing Methods 0.000 claims description 138
- 229910052751 metal Inorganic materials 0.000 claims description 96
- 239000002184 metal Substances 0.000 claims description 96
- 239000008393 encapsulating agent Substances 0.000 claims description 45
- 238000000926 separation method Methods 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000007747 plating Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 17
- 239000003566 sealing material Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229920001971 elastomer Polymers 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 229920002050 silicone resin Polymers 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- -1 gallium nitride compound Chemical class 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229920002379 silicone rubber Polymers 0.000 description 5
- 239000004945 silicone rubber Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910052693 Europium Inorganic materials 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/10—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances sulfides
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45169—Platinum (Pt) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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Abstract
【解決手段】基板上に搭載され、外部電極に電気的に接続された複数個の発光素子と、発光素子を覆うように形成された第1の蛍光体を含有する第1の封止体層と、第1の封止体層上に形成された第2の蛍光体を含有する第2の封止体層とを有する発光部を備える発光装置、ならびに、基板上に複数個の発光素子を搭載し、発光素子を外部電極に電気的に接続する工程と、発光素子を覆うように第1の蛍光体を含有する第1の封止体層を形成する工程と、第1の封止体層形成後の発光装置の色度特性を測定する工程と、測定された色度特性に応じて色度ずれを調整し得るように第1の封止体層上に第2の封止体層を形成する工程とを含む発光装置の製造方法。
【選択図】図1
Description
発光素子搭載工程ではまず、基板上に複数個の発光素子を搭載し、発光素子を外部電極に電気的に接続する。本発明の第1の局面の発光装置の具体的構成例の1つである第2の局面の発光装置(たとえば図2、図4、図7に示したような発光装置1,11,31)を製造する場合には、この発光素子搭載工程では、上記基板として上述した金属基板を用い、この金属基板上に、貫通孔を有し、かつ、配線パターンが形成された絶縁基材を形成し、貫通孔内に発光素子を搭載して、外部電極(具体的には上述した正電極外部接続ランドおよび負電極外部接続ランド)と予め電気的に接続された配線パターンに電気的に接続する。
続く第1封止体層形成工程では、発光素子を覆うように第1の蛍光体を含有する第1の封止体層を形成する。具体的には、第2の局面の発光装置、第3の局面の発光装置のいずれを製造する場合であっても、ソルダーレジスト9.49およびゴムシート10で囲まれた発光素子4,46を搭載した領域に、第1の蛍光体を含有する封止材料を注入し、硬化させることで、発光素子4,46を覆うように第1の封止体層5,47を形成する(図18(e)、図20(e))。上述のように発光素子4,46として窒化ガリウム系半導体からなる青色系の半導体発光素子を用いた場合には、第1の封止体層5,47に含有させる第1の蛍光体としては、当該半導体発光素子からの光で励起されて黄色系の光を発する蛍光体を好適に用いることができる。第1の封止体層を形成するに際しては、上述したエポキシ樹脂、シリコーン樹脂などの透光性樹脂材料などの封止材料に第1の蛍光体を予め分散させておき、ゴムシート10の貫通孔内を充填するように滴下した後硬化させるようにしてもよく、金型を用いて予め成型された樹脂封止体を用いるようにしてもよい。なお、封止材料を硬化させる方法としては、用いる封止材料に応じて従来公知の適宜の方法を特に制限されることなく用いることができる。たとえば封止材料として透光性樹脂材料であるシリコーン樹脂を用いる場合には、シリコーン樹脂を熱硬化させることで、封止材料を硬化させることができる。
続く色度測定工程では、上述した第1封止体層形成工程で得られた第1の封止体層形成後の発光装置の色度特性を測定する。この発光装置の色度特性の測定は、たとえばJIS28722の条件C,DIN5033teil7,ISOk772411に準拠のd・8(拡散照明・8°受光方式)光学系を採用した測定装置を用いて測定することができる。ここで、図21はCIEの色度座標を示すグラフである。たとえば、CIEの色度表でx、y=(0.325、0.335)となる光を発するように、第1の蛍光体と封止材料であるシリコーン樹脂とを5:100の重量比で混合したものをシリコーンゴムシート10の貫通孔内に注入し、150℃の温度で1時間熱硬化させて第1の封止体層を形成した場合、形成された第1の封止体層の色度範囲は、図21中の(a)の領域内となる。このような第1の封止体層を有する発光装置について色度特性を測定する場合には、色度範囲は図21中の(b)の領域から外れてしまう。このような色度ずれを調整するために、続く第2封止体層形成工程で第2の封止体層を形成する。
第2封止体層形成工程では、上述した色度特性工程で測定された第1の封止体層形成後の発光装置の色度特性に応じて、色度ずれを調整し得るように第1の封止体層上に第2の封止体層を形成する。具体的には、第2の局面の発光装置、第3の局面の発光装置のいずれを製造する場合であっても、上述した第1封止体層形成工程と同様にして、第1の封止体層5,47上に第2の蛍光体を含有する封止材料を注入し、硬化させて、第2の封止体層6,48を形成する(図18(g)、図20(f))。
Claims (17)
- 基板上に搭載され、外部電極に電気的に接続された複数個の発光素子と、発光素子を覆うように形成された第1の蛍光体を含有する第1の封止体層と、第1の封止体層上に形成された第2の蛍光体を含有する第2の封止体層とを有する発光部を備える、発光装置。
- 金属基板上に形成された、表面に配線パターンが形成され、かつ厚み方向に貫通する複数個の貫通孔を有する絶縁基材と、絶縁基材の貫通孔内の金属基板上に搭載され、配線パターンに電気的に接続された複数個の発光素子と、発光素子を覆うように形成された第1の蛍光体を含有する第1の封止体層と、第1の封止体層上に形成された第2の蛍光体を含有する第2の封止体層とを有する発光部を備える、発光装置。
- 金属基板上に形成された絶縁基材と、絶縁基材上に離間部を形成するようにして載置された金属板と、金属板上に搭載され、金属板に電気的に接続されているとともに、離間部を介して隣接する金属板にも電気的に接続されている複数個の発光素子と、発光素子を覆うように形成された第1の蛍光体を含有する第1の封止体層と、第1の封止体層上に形成された第2の蛍光体を含有する第2の封止体層とを有する発光部を備える、発光装置。
- 複数個の発光素子が一列に配置されて搭載されている、請求項1〜3のいずれかに記載の発光装置。
- 1つの貫通孔内に複数個の発光素子が一列に配置されて搭載され、この直線状の配置と平行となるように絶縁基材表面に直線状の配線パターンが複数形成されている、請求項2に記載の発光装置。
- 複数個の発光素子が一列に配置されて搭載され、この発光素子の列と平行な離間部を形成するように金属板が載置されている、請求項3に記載の発光装置。
- 複数個の発光素子が互いに平行な複数の列を形成するように配置されて搭載されている、請求項4〜6のいずれかに記載の発光装置。
- 互いに平行な複数の列を形成するように配置されて搭載された発光素子が、隣接する列間で共通に結線されたボンディングワイヤを介して配線パターンに電気的に接続されている、請求項2に記載の発光装置。
- 第1の封止体層が、発光素子を1個ずつ覆うように複数形成された、請求項1〜8のいずれかに記載の発光装置。
- 第1の封止体層が、複数個の発光素子を1つの第1の封止体層で覆うように形成された、請求項1〜8のいずれかに記載の発光装置。
- 第1の封止体層が、互いに平行な複数の列を形成するように配置されて搭載された発光素子を列ごとに覆うように複数形成された、請求項7または8に記載の発光装置。
- 第1の封止体層が、発光素子全てを1つの第1の封止体層で覆うように形成された、請求項1〜8のいずれかに記載の発光装置。
- 第2の封止体層が、第1の封止体層の少なくとも一部を覆うように形成された、請求項1〜12のいずれかに記載の発光装置。
- 第2の封止体層が、複数形成されたうちの少なくともいずれかの第1の封止体層上に形成された、請求項1〜13のいずれかに記載の発光装置。
- 第1の封止体層が、方形状、六角形状、円形状または複数の直線状の断面形状を有する、請求項1〜14のいずれかに記載の発光装置。
- 液晶ディスプレイのバックライト光源または照明用光源として用いられるものである、請求項1〜15のいずれかに記載の発光装置。
- 基板上に複数個の発光素子を搭載し、発光素子を外部電極に電気的に接続する工程と、
発光素子を覆うように第1の蛍光体を含有する第1の封止体層を形成する工程と、
第1の封止体層形成後の発光装置の色度特性を測定する工程と、
測定された色度特性に応じて色度ずれを調整し得るように第1の封止体層上に第2の封止体層を形成する工程とを含む、発光装置の製造方法。
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KR101922528B1 (ko) * | 2012-07-06 | 2018-11-28 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
US9140441B2 (en) | 2012-08-15 | 2015-09-22 | Cree, Inc. | LED downlight |
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US9159700B2 (en) | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
US9178123B2 (en) | 2012-12-10 | 2015-11-03 | LuxVue Technology Corporation | Light emitting device reflective bank structure |
US9345091B2 (en) | 2013-02-08 | 2016-05-17 | Cree, Inc. | Light emitting device (LED) light fixture control systems and related methods |
TWM458672U (zh) * | 2013-04-10 | 2013-08-01 | Genesis Photonics Inc | 光源模組 |
USD740453S1 (en) | 2013-06-27 | 2015-10-06 | Cree, Inc. | Light emitter unit |
USD739565S1 (en) | 2013-06-27 | 2015-09-22 | Cree, Inc. | Light emitter unit |
JP6191959B2 (ja) * | 2013-10-18 | 2017-09-06 | パナソニックIpマネジメント株式会社 | 発光装置、照明用光源及び照明装置 |
CN104576883B (zh) | 2013-10-29 | 2018-11-16 | 普因特工程有限公司 | 芯片安装用阵列基板及其制造方法 |
TW201523924A (zh) * | 2013-12-03 | 2015-06-16 | Lextar Electronics Corp | 發光二極體封裝結構 |
US9537058B2 (en) * | 2014-06-05 | 2017-01-03 | Shanghai Fudi Lighting Electronic Co., Ltd. | Embedded white light LED package structure based on solid-state fluorescence material and manufacturing method thereof |
CN104218190B (zh) * | 2014-08-26 | 2017-02-15 | 京东方科技集团股份有限公司 | 有机电致发光器件及其制造方法、显示装置 |
US9666558B2 (en) | 2015-06-29 | 2017-05-30 | Point Engineering Co., Ltd. | Substrate for mounting a chip and chip package using the substrate |
USD791089S1 (en) * | 2015-10-23 | 2017-07-04 | Citizen Electronics Co., Ltd. | Light-emitting diode |
USD823492S1 (en) | 2016-10-04 | 2018-07-17 | Cree, Inc. | Light emitting device |
US11212901B2 (en) * | 2019-01-29 | 2021-12-28 | Xiamen Eco Lighting Co. Ltd. | Light apparatus |
WO2020170970A1 (ja) * | 2019-02-21 | 2020-08-27 | デンカ株式会社 | 蛍光体基板、発光基板、照明装置、蛍光体基板の製造方法及び発光基板の製造方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088463A (ja) * | 1994-06-21 | 1996-01-12 | Sharp Corp | 薄型ledドットマトリックスユニット |
JPH11163412A (ja) * | 1997-11-25 | 1999-06-18 | Matsushita Electric Works Ltd | Led照明装置 |
JP2001057446A (ja) * | 1999-06-09 | 2001-02-27 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2001068742A (ja) * | 1999-08-25 | 2001-03-16 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2001332769A (ja) * | 2000-05-22 | 2001-11-30 | Mitsubishi Cable Ind Ltd | 発光ダイオード照明具 |
JP2004363564A (ja) * | 2003-04-30 | 2004-12-24 | Samsung Electronics Co Ltd | 蛍光多層を有する発光ダイオード素子 |
JP2006135225A (ja) * | 2004-11-09 | 2006-05-25 | Toshiba Corp | 発光装置 |
JP2006295084A (ja) * | 2005-04-14 | 2006-10-26 | Citizen Electronics Co Ltd | 発光ダイオードのパッケージ構造 |
JP2006303373A (ja) * | 2005-04-25 | 2006-11-02 | Matsushita Electric Works Ltd | 発光装置の製造方法と該発光装置を用いた照明器具 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS48102585A (ja) * | 1972-04-04 | 1973-12-22 | ||
JP3187280B2 (ja) * | 1995-05-23 | 2001-07-11 | シャープ株式会社 | 面照明装置 |
JP3393089B2 (ja) | 1999-06-23 | 2003-04-07 | 株式会社シチズン電子 | 発光ダイオード |
KR100425566B1 (ko) | 1999-06-23 | 2004-04-01 | 가부시키가이샤 시티즌 덴시 | 발광 다이오드 |
JP4280038B2 (ja) | 2002-08-05 | 2009-06-17 | 日亜化学工業株式会社 | 発光装置 |
US7258816B2 (en) | 2002-03-22 | 2007-08-21 | Nichia Corporation | Nitride phosphor and method for preparation thereof, and light emitting device |
TW200414572A (en) * | 2002-11-07 | 2004-08-01 | Matsushita Electric Ind Co Ltd | LED lamp |
US20050225222A1 (en) * | 2004-04-09 | 2005-10-13 | Joseph Mazzochette | Light emitting diode arrays with improved light extraction |
-
2007
- 2007-03-23 JP JP2007077313A patent/JP5089212B2/ja active Active
-
2008
- 2008-03-19 US US12/051,602 patent/US7872418B2/en active Active
- 2008-03-21 CN CN2008101314744A patent/CN101312185B/zh active Active
- 2008-03-21 CN CN2012100074754A patent/CN102569280A/zh active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088463A (ja) * | 1994-06-21 | 1996-01-12 | Sharp Corp | 薄型ledドットマトリックスユニット |
JPH11163412A (ja) * | 1997-11-25 | 1999-06-18 | Matsushita Electric Works Ltd | Led照明装置 |
JP2001057446A (ja) * | 1999-06-09 | 2001-02-27 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2001068742A (ja) * | 1999-08-25 | 2001-03-16 | Sanyo Electric Co Ltd | 混成集積回路装置 |
JP2001332769A (ja) * | 2000-05-22 | 2001-11-30 | Mitsubishi Cable Ind Ltd | 発光ダイオード照明具 |
JP2004363564A (ja) * | 2003-04-30 | 2004-12-24 | Samsung Electronics Co Ltd | 蛍光多層を有する発光ダイオード素子 |
JP2006135225A (ja) * | 2004-11-09 | 2006-05-25 | Toshiba Corp | 発光装置 |
JP2006295084A (ja) * | 2005-04-14 | 2006-10-26 | Citizen Electronics Co Ltd | 発光ダイオードのパッケージ構造 |
JP2006303373A (ja) * | 2005-04-25 | 2006-11-02 | Matsushita Electric Works Ltd | 発光装置の製造方法と該発光装置を用いた照明器具 |
Cited By (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010141290A (ja) * | 2008-12-11 | 2010-06-24 | Advance Connectek Inc | 発光ダイオード光源モジュール |
US9175818B2 (en) | 2009-02-13 | 2015-11-03 | Sharp Kabushiki Kaisha | Light-emitting apparatus and method for manufacturing same |
JP2010251441A (ja) * | 2009-04-14 | 2010-11-04 | Denki Kagaku Kogyo Kk | 照明用ledモジュール |
JP2012529150A (ja) * | 2009-06-02 | 2012-11-15 | ブリッジラックス インコーポレイテッド | 球放出パターンを生成する光学部品を有する光源 |
JP2011014306A (ja) * | 2009-06-30 | 2011-01-20 | Toshiba Lighting & Technology Corp | 電球形ランプおよび照明器具 |
US9231023B2 (en) | 2009-11-13 | 2016-01-05 | Sharp Kabushiki Kaisha | Light-emitting device having a plurality of concentric light transmitting areas |
US9607970B2 (en) | 2009-11-13 | 2017-03-28 | Sharp Kabushiki Kaisha | Light-emitting device having a plurality of concentric light transmitting areas |
JP2011108744A (ja) * | 2009-11-13 | 2011-06-02 | Sharp Corp | 発光装置およびその製造方法 |
US9024334B2 (en) | 2009-11-13 | 2015-05-05 | Sharp Kabushiki Kaisha | Light-emitting device having a plurality of concentric light transmitting areas |
US9679942B2 (en) | 2010-01-22 | 2017-06-13 | Sharp Kabushiki Kaisha | Light emitting device |
US9425236B2 (en) | 2010-01-22 | 2016-08-23 | Sharp Kabushiki Kaisha | Light emitting device |
US9312304B2 (en) | 2010-01-22 | 2016-04-12 | Sharp Kabushiki Kaisha | LED illuminating device comprising light emitting device including LED chips on single substrate |
US9966367B2 (en) | 2010-01-22 | 2018-05-08 | Sharp Kabushiki Kaisha | Light emitting device |
US8723195B2 (en) | 2010-01-22 | 2014-05-13 | Sharp Kabushiki Kaisha | Light emitting device with plurality of LED chips and/or electrode wiring pattern |
US9093357B2 (en) | 2010-01-22 | 2015-07-28 | Sharp Kabushiki Kaisha | Light emitting device |
JP2011204897A (ja) * | 2010-03-25 | 2011-10-13 | Toshiba Lighting & Technology Corp | 発光モジュール |
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JP2011249573A (ja) * | 2010-05-27 | 2011-12-08 | 三菱電機照明株式会社 | 発光装置及び波長変換シート及び照明装置 |
US10533712B2 (en) | 2010-07-20 | 2020-01-14 | Panasonic Intellectual Property Management Co., Ltd. | Light bulb shaped lamp |
US11703190B2 (en) | 2010-07-20 | 2023-07-18 | Satco Products, Inc. | Light bulb shaped lamp |
US9732930B2 (en) | 2010-07-20 | 2017-08-15 | Panasonic Intellectual Property Management Co., Ltd. | Light bulb shaped lamp |
JP5189211B2 (ja) * | 2010-07-20 | 2013-04-24 | パナソニック株式会社 | 電球形ランプ |
US10458602B2 (en) | 2010-07-20 | 2019-10-29 | Panasonic Intellectual Property Management Co., Ltd. | Light bulb shaped lamp |
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US10107477B2 (en) | 2010-11-11 | 2018-10-23 | Bridgelux Inc. | LED light using internal reflector |
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JP5291268B1 (ja) * | 2011-12-16 | 2013-09-18 | パナソニック株式会社 | 発光モジュールおよびこれを用いた照明用光源、照明装置 |
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CN102569280A (zh) | 2012-07-11 |
JP5089212B2 (ja) | 2012-12-05 |
CN101312185A (zh) | 2008-11-26 |
US7872418B2 (en) | 2011-01-18 |
CN101312185B (zh) | 2012-02-29 |
US20080231169A1 (en) | 2008-09-25 |
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