JP5748496B2 - Ledモジュール - Google Patents
Ledモジュール Download PDFInfo
- Publication number
- JP5748496B2 JP5748496B2 JP2011026857A JP2011026857A JP5748496B2 JP 5748496 B2 JP5748496 B2 JP 5748496B2 JP 2011026857 A JP2011026857 A JP 2011026857A JP 2011026857 A JP2011026857 A JP 2011026857A JP 5748496 B2 JP5748496 B2 JP 5748496B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- led
- substrate
- main surface
- led module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 43
- 229920005989 resin Polymers 0.000 claims description 22
- 239000011347 resin Substances 0.000 claims description 22
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Description
200 基板
201 主面
202 背面
203 底面
204 側面
211,212,213 貫通孔
221,222 コーナー溝
300 配線
301,302,303 ダイボンディングパッド(パッド)
311,312 ボンディングパッド(パッド)
321 四半環状部
322 主面連絡配線
323 枝状配線
341,342 コーナー溝配線
351,352,353 貫通配線
370 背面電極
371,372,373 個別電極
374 端部個別電極
375,376 端部共通電極
378 背面連絡配線
401,402,403 LEDチップ
500 ワイヤ
601 絶縁膜
602 充填樹脂
700 透光樹脂
710 リフレクタ
711 反射面
801 実装基板
802 ハンダフィレット
Claims (8)
- 互いに反対方向を向き長矩形状である主面および背面、これらの主面および背面の長辺どうしをつなぐ底面、を有する基板と、
上記基板の上記主面に支持された3つのLEDチップと、
上記基板上に形成されており、上記LEDチップに導通する配線と、を備えており、
上記底面を実装面とする、LEDモジュールであって、
上記3つのLEDチップは、上記主面の長手方向に離間配置されており、
上記基板は、上記主面から上記背面に貫通する3つの貫通孔を有し、
上記配線は、上記主面に形成されているとともに上記LEDチップに導通するパッド、上記背面に形成された背面電極、上記パッドおよび上記背面電極を導通させているとともに上記3つの貫通孔内面に形成された3つの貫通配線、を有しており、
上記各貫通配線は、それぞれが導通する上記LEDチップに対して上記主面の短手方向において外れた位置にあり、かつ上記長手方向において重なる位置にあり、
上記3つのLEDチップのうち上記長手方向において他の2つに挟まれたものの上記短手方向における位置がその余の2つのLEDチップと異なることにより、上記3つのLEDチップは千鳥状に配置されており、
上記3つのLEDチップのうち上記長手方向において他の2つに挟まれたものと導通する上記貫通配線は、上記LEDチップに対する上記短手方向における位置がその余の2つの上記貫通配線とは反対側にあることにより、上記3つの貫通配線は、上記3つのLEDチップとは逆向きの千鳥状に配置されていることを特徴とする、LEDモジュール。 - 上記配線は、上記基板の上記底面のすべてを露出させている、請求項1に記載のLEDモジュール。
- 上記配線は、上記LEDチップがダイボンディングされた上記パッドとしてのダイボンディングパッドを有しており、
上記ダイボンディングパッドと上記貫通孔とが上記基板の厚さ方向視において重なる、請求項1または2に記載のLEDモジュール。 - 上記背面電極は、各々が上記貫通配線と導通する3つの個別電極を有する、請求項1ないし3のいずれかに記載のLEDモジュール。
- 上記基板は、上記長手方向両端において上記主面および上記背面をつなぐ1対の側面を有しており、かつ上記側面および上記底面の間に介在しており、かつ上記基板の厚さ方向において上記主面および上記背面に達する2つのコーナー溝が形成されており、
上記配線は、上記2つのコーナー溝の内面に形成された2つのコーナー溝配線を有する、請求項1ないし4のいずれかに記載のLEDモジュール。 - 上記2つのコーナー溝配線のうちの一方は、2つの上記LEDチップに導通しており、他方は、1つの上記LEDチップに導通しており、
上記背面電極は、各々が上記コーナー溝配線に接続された2つの端部共通電極を有する、請求項5に記載のLEDモジュール。 - 上記コーナー溝は、断面四半円形状である、請求項5または6に記載のLEDモジュール。
- 上記主面に形成されており、上記3つのLEDチップを囲む反射面を有するリフレクタと、
上記反射面に囲まれた領域に充填されており、上記3つのLEDチップを覆う透光樹脂と、を備える、請求項1ないし7のいずれかに記載のLEDモジュール。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011026857A JP5748496B2 (ja) | 2011-02-10 | 2011-02-10 | Ledモジュール |
US13/369,571 US9041016B2 (en) | 2011-02-10 | 2012-02-09 | LED module |
CN201210029823.8A CN102646672B (zh) | 2011-02-10 | 2012-02-10 | Led模块 |
US14/703,169 US9613935B2 (en) | 2011-02-10 | 2015-05-04 | LED module |
US15/455,236 US10103130B2 (en) | 2011-02-10 | 2017-03-10 | LED module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011026857A JP5748496B2 (ja) | 2011-02-10 | 2011-02-10 | Ledモジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012169326A JP2012169326A (ja) | 2012-09-06 |
JP5748496B2 true JP5748496B2 (ja) | 2015-07-15 |
Family
ID=46636219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011026857A Active JP5748496B2 (ja) | 2011-02-10 | 2011-02-10 | Ledモジュール |
Country Status (3)
Country | Link |
---|---|
US (3) | US9041016B2 (ja) |
JP (1) | JP5748496B2 (ja) |
CN (1) | CN102646672B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220107384A (ko) * | 2021-01-25 | 2022-08-02 | 주식회사 에스엘바이오닉스 | 반도체 발광소자 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5528900B2 (ja) * | 2010-04-30 | 2014-06-25 | ローム株式会社 | 発光素子モジュール |
CN103759225B (zh) * | 2013-12-09 | 2016-08-17 | 广东雪莱特光电科技股份有限公司 | 一种光学反射器件及led发光元件 |
JP6318004B2 (ja) | 2014-05-27 | 2018-04-25 | ローム株式会社 | Ledモジュール、ledモジュールの実装構造 |
CN107783222B (zh) * | 2016-08-26 | 2020-07-14 | 美蓓亚三美株式会社 | 面状照明装置和基板 |
CN108269899B (zh) * | 2016-12-30 | 2020-06-05 | 光宝光电(常州)有限公司 | 发光二极管封装结构及其制造方法 |
JP6399132B2 (ja) * | 2017-03-27 | 2018-10-03 | 日亜化学工業株式会社 | 発光装置 |
EP3872874B1 (en) | 2017-12-22 | 2023-06-07 | Nichia Corporation | Light emitting device |
TWI816491B (zh) * | 2018-02-14 | 2023-09-21 | 晶元光電股份有限公司 | 發光裝置、其製造方法及顯示模組 |
KR20190132215A (ko) * | 2018-05-18 | 2019-11-27 | 서울반도체 주식회사 | 발광 다이오드, 발광 다이오드 모듈 및 그것을 갖는 표시 장치 |
KR20210003001A (ko) * | 2019-07-01 | 2021-01-11 | 안상정 | 반도체 발광소자 |
CN113228312B (zh) | 2018-12-27 | 2024-08-13 | 波主有限公司 | 半导体发光器件 |
JP7283938B2 (ja) | 2019-03-27 | 2023-05-30 | ローム株式会社 | 半導体発光装置 |
TWI820389B (zh) * | 2021-02-08 | 2023-11-01 | 隆達電子股份有限公司 | 發光元件封裝體、顯示裝置及製造顯示裝置的方法 |
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-
2011
- 2011-02-10 JP JP2011026857A patent/JP5748496B2/ja active Active
-
2012
- 2012-02-09 US US13/369,571 patent/US9041016B2/en active Active
- 2012-02-10 CN CN201210029823.8A patent/CN102646672B/zh active Active
-
2015
- 2015-05-04 US US14/703,169 patent/US9613935B2/en active Active
-
2017
- 2017-03-10 US US15/455,236 patent/US10103130B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220107384A (ko) * | 2021-01-25 | 2022-08-02 | 주식회사 에스엘바이오닉스 | 반도체 발광소자 |
KR102471801B1 (ko) * | 2021-01-25 | 2022-11-30 | 주식회사 에스엘바이오닉스 | 반도체 발광소자 |
Also Published As
Publication number | Publication date |
---|---|
JP2012169326A (ja) | 2012-09-06 |
US10103130B2 (en) | 2018-10-16 |
CN102646672A (zh) | 2012-08-22 |
US9041016B2 (en) | 2015-05-26 |
US9613935B2 (en) | 2017-04-04 |
US20150235996A1 (en) | 2015-08-20 |
CN102646672B (zh) | 2016-12-14 |
US20120205677A1 (en) | 2012-08-16 |
US20170186735A1 (en) | 2017-06-29 |
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