JP4859050B2 - 発光装置及びその製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/54—Screens on or from which an image or pattern is formed, picked-up, converted, or stored; Luminescent coatings on vessels
- H01J1/62—Luminescent screens; Selection of materials for luminescent coatings on vessels
- H01J1/63—Luminescent screens; Selection of materials for luminescent coatings on vessels characterised by the luminescent material
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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Description
2θ(1/2)=|θ1−θ2|
ここでθ1、θ2は、最も大きな輝度の値を100%とし、そのときの角度を基準角度としたとき、その基準角度から0°の位置側に回転させて輝度が50%になる角度をθ1とし、基準角度から180°の位置側に回転させて輝度が50%になる角度をθ2とする。
主発光波長が405nmの紫外線光を発する発光素子5上に直接的に3つの異なる蛍光体層10、11、12が積層された図2に示す発光装置1を作成した。実施例1では、蛍光体層10に含有される蛍光体20としてCaAlSiN3:Eu、蛍光体層11に含有される蛍光体25としてSrAl1+xSi4−xOxN7−x:Ce、蛍光体層12に含有される蛍光体27としてSrAlxSi6−xO1+xN8−x:Euを用いた。蛍光体20の粒子径は、10μm以下、蛍光体25の粒子径は、13μm以下、蛍光体27の粒子径は、20μm以下に調整されている。
比較例1として、図19に示す発光装置200を作成した。発光装置200は、基板2上に配置された青色光を発する発光素子5の発光面上に、赤色光を発する蛍光体20を含有する蛍光体層210と緑色光を発する蛍光体25を含有する蛍光体層211とを順に積層し、さらに、その周囲に樹脂15を厚く配置した構成になっている。
比較例2として、図24に示す発光装置201を作成した。発光装置201は、基板2上に配置された紫外線光を発する発光素子5の発光面上に中間層12として樹脂を配置し、この中間層12を介して発光素子5から離間した位置に、赤色光を発する蛍光体20を含有する蛍光体層210、緑色光を発する蛍光体25を含有する蛍光体層211及び青色光を発する蛍光体27を含有する蛍光体層212を混合して薄い層状にして配置した構成になっている。
比較例3として、図29に示す発光装置202を作成した。発光装置202は、基板2上に配置された紫外線光を発する発光素子5の周囲に、赤色光を発する蛍光体20、緑色光を発する蛍光体25及び青色光を発する蛍光体27を混合させた樹脂を厚く配置した構成を有する。蛍光体20、25、27の粒子径は調整されていない。
2 基板
3 側壁
5 発光素子
6 外部電極
7 導電線ワイヤ
10、11、12 蛍光体層
10a〜10c、11a〜11c、12a〜12c 蛍光体構成層
15 封止部材
20、25、27 蛍光体
21、26、28 接着剤
30 ヒータ
31 排出口
35 ノズル
36 カートリッジ
37 配管
40 貯留部
41 配管
42 圧力調整装置
43 開閉弁
46 検出器
47 光ファイバー
48 分光器
49 配線
50 電源
51 光学レンズ
55 高圧電源
56 電圧制御装置
100、200〜202 比較例としての発光装置
101 地図灯
102 光学レンズ
103 光拡散材
210〜212 比較例としての蛍光体層
Claims (6)
- 主発光波長が410nm以下である発光素子と、前記発光素子からの光を吸収し、波長変換して発光する蛍光体を含有する複数の蛍光体層とを備え、前記発光素子の発光面を覆うように、前記複数の蛍光体層が前記発光素子上に積層された発光装置の製造方法であって、
前記複数の蛍光体層に含有される蛍光体は、各蛍光体層ごとに主発光波長が異なり、
前記複数の蛍光体層の最大厚さ及び最小厚さの差は、当該蛍光体層に含有されている蛍光体の平均粒径の2倍以下であり、且つ、前記複数の蛍光体層は前記蛍光体の占有率が50%以上であり、
前記各蛍光体層は、複数の蛍光体構成層からなり、
前記複数の蛍光体構成層の各々は、前記発光素子の発光面もしくは前記蛍光体構成層に接着剤を塗布し、塗布された接着剤に前記蛍光体を固着させることにより形成されることを特徴とする、発光装置の製造方法。 - 前記蛍光体層の厚さを、前記蛍光体の平均粒径の5倍以下に形成することを特徴とする、請求項1に記載の発光装置の製造方法。
- 前記蛍光体層を形成する際には、前記発光素子上に接着剤を前記蛍光体の平均粒径よりも薄く塗布した後、前記塗布された接着剤に前記蛍光体を固着して蛍光体構成層を形成する形成工程を行い、前記蛍光体層について所望の色温度が得られるまで前記蛍光体構成層を積層することを特徴とする、請求項1又は2に記載の発光装置の製造方法。
- 前記接着剤を塗布する際には、塗布面上をヒータで加熱した状態で行うことを特徴とする、請求項3に記載の発光装置の製造方法。
- 前記複数の蛍光体層を積層する際には、前記発光素子に近い側の蛍光体層に含有される蛍光体の主発光波長が、前記発光素子から遠い側の蛍光体層に含有される蛍光体の主吸収波長と異なるように積層することを特徴とする、請求項1〜3のいずれかに記載の発光装置の製造方法。
- 前記複数層の蛍光体構成層を積層する場合、前記接着剤の塗布と、前記蛍光体の固着と、前記接着剤の仮硬化と、色温度の測定とその測定結果の検証と、を繰り返すことにより、所望の色温度を得ることを特徴とする、請求項1〜5のいずれかに記載の発光装置の製造方法。
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JP2006320129A JP4859050B2 (ja) | 2006-11-28 | 2006-11-28 | 発光装置及びその製造方法 |
US11/987,176 US7812516B2 (en) | 2006-11-28 | 2007-11-28 | Light-emitting device and manufacturing method thereof |
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US7795600B2 (en) * | 2006-03-24 | 2010-09-14 | Goldeneye, Inc. | Wavelength conversion chip for use with light emitting diodes and method for making same |
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WO2009144922A1 (ja) * | 2008-05-30 | 2009-12-03 | 株式会社 東芝 | 白色ledおよびそれを用いたバックライトならびに液晶表示装置 |
EP2311104B1 (de) * | 2008-08-11 | 2018-03-28 | OSRAM GmbH | Konversions-led |
TWI508331B (zh) | 2008-11-13 | 2015-11-11 | Maven Optronics Corp | 用於形成螢光轉換型發光元件之薄膜螢光層的系統及方法、以及用於螢光轉換型發光元件之薄膜螢光層 |
JP5572305B2 (ja) * | 2008-12-12 | 2014-08-13 | 株式会社日立製作所 | 発光素子,発光素子を用いた発光装置、及び発光素子に使用される透明基板 |
TWI381556B (zh) * | 2009-03-20 | 2013-01-01 | Everlight Electronics Co Ltd | 發光二極體封裝結構及其製作方法 |
JP5671023B2 (ja) | 2009-07-14 | 2015-02-18 | コーニンクレッカ フィリップス エヌ ヴェ | 色温度可変発光器 |
CN102792473B (zh) * | 2010-03-12 | 2015-11-25 | 株式会社东芝 | 白色照明装置 |
JP2011228673A (ja) * | 2010-03-30 | 2011-11-10 | Mitsubishi Chemicals Corp | 発光装置 |
KR101719655B1 (ko) * | 2010-09-29 | 2017-03-24 | 서울반도체 주식회사 | 형광체 시트, 형광체 시트를 갖는 발광장치 및 그 제조 방법 |
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JP6066253B2 (ja) * | 2011-09-26 | 2017-01-25 | 東芝ライテック株式会社 | 発光装置の製造方法 |
JP5902908B2 (ja) * | 2011-10-19 | 2016-04-13 | スタンレー電気株式会社 | 半導体発光装置および車両用灯具 |
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JP2004273798A (ja) * | 2003-03-10 | 2004-09-30 | Toyoda Gosei Co Ltd | 発光デバイス |
US7038370B2 (en) * | 2003-03-17 | 2006-05-02 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting device |
JP2004288760A (ja) * | 2003-03-20 | 2004-10-14 | Stanley Electric Co Ltd | 多層led |
US7026755B2 (en) * | 2003-08-07 | 2006-04-11 | General Electric Company | Deep red phosphor for general illumination applications |
JP3871668B2 (ja) * | 2003-08-26 | 2007-01-24 | 東芝電子エンジニアリング株式会社 | 半導体発光装置 |
US7327078B2 (en) * | 2004-03-30 | 2008-02-05 | Lumination Llc | LED illumination device with layered phosphor pattern |
JP2006005336A (ja) * | 2004-05-18 | 2006-01-05 | Showa Denko Kk | 発光ダイオードおよびその製造方法 |
JP2005340512A (ja) * | 2004-05-27 | 2005-12-08 | Fujikura Ltd | 発光装置及び発光装置製造方法 |
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2006
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US20080122343A1 (en) | 2008-05-29 |
US7812516B2 (en) | 2010-10-12 |
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