JP5076121B2 - 発光ダイオード装置及びその製作方法 - Google Patents
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- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
1.本発明は多孔質材料層の中の孔配列結構を先に形成してから、均一に分散している各孔の中にナノ結晶を埋め込み、それにより蛍光層におけるナノ結晶分布の均一性を制御する。したがって、LEDから発せられた光とナノ結晶から発せられた蛍光を混合して得た白色光または他色の光は均一に分散でき、多数のチップまたはチップアレイが回路基板に直接実装された構造でも均一な色の光を発せられる。
2.本発明は乾燥プロセスとベーキングプロセスの時間と温度条件を制御して孔の孔径を制御し、更にこの孔径によりナノ結晶の大きさを制御することで、ナノ結晶が光を吸収した後に放射する蛍光の波長を定める。或いは、多孔質材料層の材料と、ナノ結晶の材料を制御してナノ結晶と多孔質材料層との間の分子間結合を変え、蛍光層に種々の蛍光波長を放射させる。したがって、単層または多層の蛍光層を利用すれば、種々の色温度、色飽和度、及び演色性を有する光を混合することができる。
3.前記多孔質材料層と蛍光層はいずれも高い光透過率を有するので、光が散乱する確率を低くし、光が再び吸収されるのを避けるとともに、発光効率を向上させる効果がある。
12 LED
14 コロイド溶液
16 コロイド薄膜
18 第一孔
20 第一多孔質材料層
22 成長チャンバー
24 第一ナノ結晶
26 第一蛍光層
28、50、60、70、100 LED装置
52 第二蛍光層
54 第二孔
56 第二多孔質材料層
58 第二ナノ結晶
72 溝
78 第一透光材料層
80 第二透光材料層
82 蛍光層
Claims (20)
- 発光ダイオード(LED)装置の製作方法であって、
基板と、基板に設けられる少なくとも1つのLEDを設ける段階と、
前記LEDの表面に複数の孔を有する多孔質材料層を形成する段階と、
導入気体を間歇的に導入することによって、ナノ結晶を形成すると共に前記各孔に複数のナノ結晶を高密度で埋め込み、前記LEDの表面に蛍光層を形成する段階とを含む、ことを特徴とするLED装置の製作方法。 - 前記多孔質材料層を形成する段階は、
コロイド溶液を提供する段階と、
前記LEDの表面に前記コロイド溶液を塗布する段階と、
乾燥プロセスを実行して前記コロイド溶液を前記多孔質材料層にする段階とを含む、ことを特徴とする請求項1に記載のLED装置の製作方法。 - 前記コロイド溶液を形成する段階は、
複数種の有機材料と複数種の無機材料を混合して混合溶液を形成する段階と、
前記混合溶液を加熱して前記コロイド溶液にする段階とを含む、ことを特徴とする請求項2に記載のLED装置の製作方法。 - 前記多孔質材料層の材料はシリコン酸化物を含む、ことを特徴とする請求項1に記載のLED装置の製作方法。
- 前記各孔にナノ結晶を埋め込む段階は化学的気相成長(CVD)工程を利用する、ことを特徴とする請求項1に記載のLED装置の製作方法。
- 前記各孔にナノ結晶を埋め込む段階の温度条件は100〜500℃である、ことを特徴とする請求項1に記載のLED装置の製作方法。
- 前記導入気体の成分はシリコン、III−V族半導体材料、II−VI族半導体材料から選ばれる、ことを特徴とする請求項1に記載のLED装置の製作方法。
- LED装置であって、
少なくとも1つのLEDと、
前記LEDに設けられ、複数の第一孔を有する第一多孔質材料層と、
前記各第一孔の中に高密度で設けられ、前記各第一孔の孔径より小さい粒径を有する複数の第一ナノ結晶とを含む、ことを特徴とするLED装置。 - 前記各第一孔は柱状である、ことを特徴とする請求項8に記載のLED装置。
- 前記各第一孔は前記LEDの表面と平行である、ことを特徴とする請求項9に記載のLED装置。
- 前記各第一孔の垂直断面は三角形配列を呈する、ことを特徴とする請求項10に記載のLED装置。
- 前記各第一孔の垂直断面は矩形配列を呈する、ことを特徴とする請求項10に記載のLED装置。
- 前記各第一孔の孔径は200nmより小さい、ことを特徴とする請求項8に記載のLED装置。
- 前記LED装置から発せられた光の波長範囲は380〜500nmである、ことを特徴とする請求項8に記載のLED装置。
- 前記第一多孔質材料層と前記第一ナノ結晶は第一蛍光層を構成し、当該第一蛍光層の励起時に発する蛍光の波長範囲は400〜700nmである、ことを特徴とする請求項8に記載のLED装置。
- 前記LED装置はさらに少なくとも1枚の第二蛍光層を含み、当該第二蛍光層は複数の第二孔を有する第二多孔質材料層と、当該各第二孔の中に設けられる複数の第二ナノ結晶とを含む、ことを特徴とする請求項15に記載のLED装置。
- 前記各第二孔の孔径は前記各第一孔の孔径と異なる、ことを特徴とする請求項16に記載のLED装置。
- 前記各第一ナノ結晶の材料と大きさは前記各第二ナノ結晶の材料と大きさと異なる、ことを特徴とする請求項16に記載のLED装置。
- 前記LED装置は更に、前記LEDと前記第一多孔質材料層の間に設けられ、1.2〜1.7の屈折率を有する第一透光材料層を含む、ことを特徴とする請求項8に記載のLED装置。
- 前記LED装置は更に、前記第一透光材料層と前記第一多孔質材料層の間に設けられ、前記第一透光材料層より小さい屈折率を有する少なくとも1枚の第二透光材料層を含む、ことを特徴とする請求項19に記載のLED装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW097137673 | 2008-10-01 | ||
TW097137673A TWI378575B (en) | 2008-10-01 | 2008-10-01 | Light emitting diode device and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
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JP2010087465A JP2010087465A (ja) | 2010-04-15 |
JP5076121B2 true JP5076121B2 (ja) | 2012-11-21 |
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JP2009103833A Expired - Fee Related JP5076121B2 (ja) | 2008-10-01 | 2009-04-22 | 発光ダイオード装置及びその製作方法 |
Country Status (3)
Country | Link |
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US (2) | US8183759B2 (ja) |
JP (1) | JP5076121B2 (ja) |
TW (1) | TWI378575B (ja) |
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WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
WO2009151515A1 (en) | 2008-05-06 | 2009-12-17 | Qd Vision, Inc. | Solid state lighting devices including quantum confined semiconductor nanoparticles |
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KR20120062773A (ko) | 2009-08-14 | 2012-06-14 | 큐디 비젼, 인크. | 조명 장치, 조명 장치용 광학 요소, 및 방법 |
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2008
- 2008-10-01 TW TW097137673A patent/TWI378575B/zh not_active IP Right Cessation
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2009
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US8421336B2 (en) | 2013-04-16 |
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