JP6309448B2 - 被覆燐光体及びこれ含む発光デバイス - Google Patents
被覆燐光体及びこれ含む発光デバイス Download PDFInfo
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- JP6309448B2 JP6309448B2 JP2014513678A JP2014513678A JP6309448B2 JP 6309448 B2 JP6309448 B2 JP 6309448B2 JP 2014513678 A JP2014513678 A JP 2014513678A JP 2014513678 A JP2014513678 A JP 2014513678A JP 6309448 B2 JP6309448 B2 JP 6309448B2
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- phosphor
- sol
- emitting device
- led
- light emitting
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 189
- 238000000576 coating method Methods 0.000 claims description 66
- 239000011248 coating agent Substances 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 25
- 239000007787 solid Substances 0.000 claims description 23
- 150000004767 nitrides Chemical class 0.000 claims description 21
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 14
- 239000002243 precursor Substances 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 12
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 11
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
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- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
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- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 4
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 3
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- MEWGTFVEQWELBF-UHFFFAOYSA-N [4-(chloromethyl)phenyl]-triethoxysilane Chemical compound CCO[Si](OCC)(OCC)C1=CC=C(CCl)C=C1 MEWGTFVEQWELBF-UHFFFAOYSA-N 0.000 description 1
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- 125000000278 alkyl amino alkyl group Chemical group 0.000 description 1
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- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- IWZGHCQJWGGNIU-UHFFFAOYSA-N trimethoxy-[3-(4-methoxyphenyl)propyl]silane Chemical compound COC1=CC=C(CCC[Si](OC)(OC)OC)C=C1 IWZGHCQJWGGNIU-UHFFFAOYSA-N 0.000 description 1
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- OJKNCYVKEUNYAX-UHFFFAOYSA-N trimethyl-(4-nitrophenoxy)silane Chemical compound C[Si](C)(C)OC1=CC=C([N+]([O-])=O)C=C1 OJKNCYVKEUNYAX-UHFFFAOYSA-N 0.000 description 1
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- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/0883—Arsenides; Nitrides; Phosphides
-
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Description
本明細書に使用する時の「アルキル」という用語は、例えば、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、tert−ブチル基、ペンチル基、ヘキシル基、オクチル基、エテニル基、プロペニル基、ブテニル基、ペンテニル基、ヘキセニル基、オクテニル基、ブタジエニル基、プロピニル基、ブチニル基、ペンチニル基、ヘキシニル基、ヘプチニル基、及びアレニル基を含む線状(すなわち、「直鎖」)、分枝、又は環状の飽和した又は少なくとも部分的に不飽和及び一部の場合は完全に不飽和の(すなわち、アルケニル及びアルキニル)炭化水素鎖を含むC1-20を指す。「分枝」は、メチル、エチル、又はプロピルのような低級アルキル基が線状アルキル鎖に結合されたアルキル基を指す。例示的な分枝アルキル基は、イソプロピル、イソブチル、tert−ブチルを含むがこれらに限定されない。「低級アルキル」は、1個から約8個の炭素原子、例えば、1個、2個、3個、4個、5個、6個、7個、又は8個の炭素原子を有するアルキル基(すなわち、C1-8アルキル)を指す。「高級アルキル」は、約10個から約20個の炭素原子、例えば、10個、11個、12個、13個、14個、15個、16個、17個、18個、19個、又は20個の炭素原子を有するアルキル基を指す。ある一定の実施形態において、「アルキル」は、特にC1-5直鎖アルキルを指す。他の実施形態において、「アルキル」は、特にC1-5分枝鎖アルキルを指す。
エタノールと、テトラエチルオルトケイ酸塩(TEOS)(30重量%)と、水と、酢酸(1M)とを含む溶液、1時間。次に、この溶液を赤色窒化物燐光体と15分間混合し、その後に、溶液を燐光体から分離して燐光体を乾燥し、一部の場合には0.5時間から5時間のような所定の時間量にわたって350℃で加熱乾燥する。
イソプロパノールと、テトラエチルオルトケイ酸塩(TEOS)(30重量%)と、塩酸(1M)又は水酸化アンモニウム(1M)とを含む溶液を調製し、24時間〜32時間にわたって反応させる。次に、この溶液を赤色窒化物燐光体と16時間から24時間にわたって混合し、その後に、溶液を燐光体から分離して燐光体を乾燥し、一部の場合には2〜6時間のような所定の時間量にわたって200℃で加熱乾燥する。
水と、市販のLudoxCL(登録商標)と、塩酸(1M)とを含む溶液を24時間から32時間にわたって反応させる。次に、この溶液を窒化物燐光体と16時間から24時間にわたって混合し、その後に、溶液を燐光体から分離して燐光体を乾燥し、一部の場合には2〜6時間のような所定の時間量にわたって200℃で加熱乾燥する。
水と、市販のLudoxAM(登録商標)と、塩酸(1M)とを含む溶液を24時間から32時間にわたって反応させる。次に、この溶液を窒化物燐光体と16時間から24時間にわたって混合し、その後に、溶液を燐光体から分離して燐光体を乾燥し、一部の場合には2〜6時間のような所定の時間量にわたって200℃で加熱乾燥する。
水と、TEOS(30重量%)と、トリエチルホウ酸塩(TEBorate)(30重量%)と、イソプロパノールと、塩酸(1M)とを含む溶液を24時間から32時間にわたって反応させる。次に、この溶液を窒化物燐光体と16時間から24時間にわたって混合し、その後に、溶液を燐光体から分離して燐光体を乾燥し、一部の場合には2〜6時間のような所定の時間量にわたって200℃で加熱乾燥する。
水と、市販のLudoxAM(登録商標)と、塩酸(1M)又は水酸化アンモニウム(1M)とを含む溶液を24時間から32時間にわたって反応させる。次に、この溶液を窒化物燐光体と16時間から24時間にわたって混合し、その後に、溶液を燐光体から分離して燐光体を乾燥し、一部の場合には2〜6時間のような所定の時間量にわたって200℃で加熱乾燥する。この後、この手順をもう一度繰返し、得られる燐光体を水と、市販のNyacolAL(登録商標)20と、硫酸アルミニウムとを含む溶液中に導入し、次に、pH6.5に達するように硫酸及び/又は水酸化アンモニウムを添加する。
図3を参照すると、例示的方法1から得られた非被覆燐光体及び被覆燐光体が、85℃及び湿度85%で経時的な色維持に対して調査された。図3で分るように、サンプルは、放出色に関して840時間にわたって間隔を置いて検査された。被覆されたサンプルは、840時間を通して実質的に色を維持したが(du’v’は、0.0015を下回った)、非被覆燐光体から放出された色は経時的に変化した。図4を参照すると、例示的方法1からの被覆燐光体及び非被覆燐光体が、光束に対して検査された。非被覆燐光体には1という輝度が与えられており、被覆燐光体が非被覆燐光体よりも僅か0.7%しか下回らない輝度を有することが示された。例示的方法2〜6によって得られた被覆燐光体に対して類似の検査を実施し、そのような燐光体においてもまた、85℃及び湿度85%で長期間にわたって改善された色維持が見られた。更に、他の方法によって調製された燐光体の光束は、コーティングにより有意な影響を受けなかった(非被覆燐光体よりも1%又はそれ未満だけ暗い)。
24 放出色に関する検査時間
96 放出色に関する検査時間
840 放出色に関する検査時間
du’v’ 色シフト
Claims (22)
- 燐光体を被覆する方法であって、
(a)窒化物燐光体をコロイドシリカ及びコロイドアルミナのうちの少なくとも1つ、並びに酸触媒を含むゾルに接触させ、
(b)前記燐光体を200℃から600℃の範囲の温度で加熱し、もって被覆燐光体を形成する段階と、
を含み、
前記窒化物燐光体を前記ゾルと接触させる前に、前記ゾルを24時間から32時間にわたって反応させ、
前記ゾルは、シリカ、アルミナ、又はホウ酸塩の前駆体を含まないことを特徴とする方法。 - 前記ゾルは、溶剤を更に含むことを特徴とする請求項1に記載の方法。
- 前記溶剤は、水、メタノール、エタノール、プロパノール、ブタノール、2−エトキシエタノール、ホルムアミド、ジメチルホルムアミド、ジオキサン、及びテトラヒドロフランから構成される群から選択された少なくとも1つの溶剤を含むことを特徴とする請求項2に記載の方法。
- 前記酸触媒は、塩酸を含むことを特徴とする請求項1に記載の方法。
- 前記酸触媒は、酢酸を含むことを特徴とする請求項1に記載の方法。
- 前記ゾルは、アルミナ及び/又は硫酸アルミニウムを含むことを特徴とする請求項1に記載の方法。
- 段階(a)及び(b)が、同じゾルを用いて繰り返されることを特徴とする請求項1に記載の方法。
- 段階(a)及び(b)が、異なるゾルを用いて繰り返されることを特徴とする請求項1に記載の方法。
- 段階(a)及び(b)が、同じゾルを用いて繰り返され、かつ異なるゾルを用いても繰り返されることを特徴とする請求項1に記載の方法。
- 固体光源と、
前記固体光源を覆うレンズと、
アルミナ、及び/又はシリカで被覆され、前記固体光源と光学的に結合された燐光体であって、85℃及び85%相対湿度で840時間後に0.0015未満のdu’v’を有する前記燐光体と、
を含み、
前記燐光体のコーティングの厚みは、1μmから8μmの範囲にあることを特徴とする発光デバイス。 - 前記燐光体は、反応性燐光体であることを特徴とする請求項10に記載の発光デバイス。
- 前記反応性燐光体は、窒化物燐光体を含むことを特徴とする請求項11に記載の発光デバイス。
- 前記反応性燐光体は、オキシ窒化物燐光体を含むことを特徴とする請求項11に記載の発光デバイス。
- 前記反応性燐光体は、Eu及び/又はPrによって活性化された(Sr1-xCax)(Ga1-yAly)2(S1-zSez)4及びEuによって活性化された(Ca1-xSrx)(S1-ySey)のうちの少なくとも一方を含むことを特徴とする請求項11に記載の発光デバイス。
- 前記燐光体は、2から25ミクロンの範囲の平均粒子サイズを有することを特徴とする請求項10に記載の発光デバイス。
- 緑色及び/又は黄色燐光体を更に含むことを特徴とする請求項10に記載の発光デバイス。
- 前記レンズは、前記燐光体を含むことを特徴とする請求項10に記載の発光デバイス。
- 前記燐光体は、前記固体光源上に被覆されていることを特徴とする請求項10に記載の発光デバイス。
- 前記窒化物燐光体を、前記ゾルと16時間から24時間にわたって反応させることを特徴とする請求項1に記載の方法。
- 前記燐光体を200℃で2〜6時間加熱する段階をさらに含むことを特徴とする請求項1に記載の方法。
- 前記窒化物燐光体を室温で前記ゾルと反応させることを特徴とする請求項1に記載の方法。
- 前記窒化物燐光体を、前記ゾルに接触させる前に室温で反応させることを特徴とする請求項1に記載の方法。
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Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI434912B (zh) * | 2010-12-29 | 2014-04-21 | Ind Tech Res Inst | 螢光粉改質之方法、螢光粉組成物及其製造方法與螢光粉溶液 |
US9275949B2 (en) * | 2011-06-01 | 2016-03-01 | Canon Kabushiki Kaisha | Semiconductor device |
KR101850755B1 (ko) * | 2014-03-27 | 2018-04-23 | 미쓰이금속광업주식회사 | 형광체 및 그 용도 |
CN105322076A (zh) * | 2014-09-05 | 2016-02-10 | 姚晓宁 | Led灯具远程激发式荧光转换膜的形成方法 |
JP2017531068A (ja) * | 2014-09-17 | 2017-10-19 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | ハイブリッドコーティングを有する蛍光体および製造方法 |
KR102337406B1 (ko) | 2014-12-09 | 2021-12-13 | 삼성전자주식회사 | 불화물 형광체, 불화물 형광체 제조방법, 백색 발광장치, 디스플레이 장치 및 조명장치 |
CN105199735B (zh) * | 2015-08-31 | 2017-12-01 | 江汉大学 | 一种固态量子点的制备方法 |
US10253257B2 (en) * | 2015-11-25 | 2019-04-09 | Intematix Corporation | Coated narrow band red phosphor |
JP6288061B2 (ja) | 2015-12-10 | 2018-03-07 | 日亜化学工業株式会社 | 発光装置の製造方法 |
WO2018022456A1 (en) | 2016-07-26 | 2018-02-01 | Cree, Inc. | Light emitting diodes, components and related methods |
EP3532770B1 (en) | 2016-10-31 | 2023-03-29 | Intematix Corporation | Backlight display with a coated narrow band green phosphor |
US10535805B2 (en) | 2017-01-13 | 2020-01-14 | Intematix Corporation | Narrow-band red phosphors for LED lamps |
US20180204984A1 (en) * | 2017-01-13 | 2018-07-19 | Intematix Corporation | Narrow-band red phosphors for led lamps |
DE102017213599A1 (de) * | 2017-08-04 | 2019-02-07 | Osram Gmbh | Leuchtstoffanordnung, laser activated remote phosphor (larp) system und scheinwerfer |
US10495263B2 (en) | 2017-10-27 | 2019-12-03 | Consumer Lighting (U.S.), Llc | LED filament lamps with white filament appearance |
CN107763568A (zh) * | 2018-01-26 | 2018-03-06 | 北国之光(辽宁)科技有限公司 | 一种关于led远程激发荧光粉层的制备方法 |
CN112912336A (zh) * | 2018-08-03 | 2021-06-04 | 德克萨斯大学体系董事会 | 用于增强磷光体在聚合物基质中的分散的方法和组合物 |
EP3942607A1 (en) | 2019-03-18 | 2022-01-26 | Intematix Corporation | Led-filament |
US11342311B2 (en) | 2019-03-18 | 2022-05-24 | Intematix Corporation | LED-filaments and LED-filament lamps utilizing manganese-activated fluoride red photoluminescence material |
CN113826225A (zh) | 2019-03-18 | 2021-12-21 | 英特曼帝克司公司 | 包括光致发光层状结构的封装白色发光装置 |
US11781714B2 (en) | 2019-03-18 | 2023-10-10 | Bridgelux, Inc. | LED-filaments and LED-filament lamps |
EP4311847A1 (en) * | 2022-07-27 | 2024-01-31 | Seaborough IP I B.V. | Composite luminescent particles |
JP7345948B1 (ja) * | 2023-06-15 | 2023-09-19 | エルティーアイ株式会社 | 蓄光粒子および蓄光粒子の製造方法 |
Family Cites Families (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4918497A (en) | 1988-12-14 | 1990-04-17 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US5027168A (en) | 1988-12-14 | 1991-06-25 | Cree Research, Inc. | Blue light emitting diode formed in silicon carbide |
US5196229A (en) * | 1989-08-21 | 1993-03-23 | Gte Products Corporation | Coated phosphor articles |
US4966862A (en) | 1989-08-28 | 1990-10-30 | Cree Research, Inc. | Method of production of light emitting diodes |
US5210051A (en) | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
US5359345A (en) | 1992-08-05 | 1994-10-25 | Cree Research, Inc. | Shuttered and cycled light emitting diode display and method of producing the same |
US5416342A (en) | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
US5338944A (en) | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
US5393993A (en) | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
US5604135A (en) | 1994-08-12 | 1997-02-18 | Cree Research, Inc. | Method of forming green light emitting diode in silicon carbide |
DE4432035A1 (de) | 1994-09-09 | 1996-03-14 | Philips Patentverwaltung | Beschichtungsverfahren für Lumineszenzpulver, Luminenzenzpulver und beschichteter Gegenstand |
US5523589A (en) | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5631190A (en) | 1994-10-07 | 1997-05-20 | Cree Research, Inc. | Method for producing high efficiency light-emitting diodes and resulting diode structures |
US5739554A (en) | 1995-05-08 | 1998-04-14 | Cree Research, Inc. | Double heterojunction light emitting diode with gallium nitride active layer |
US6600175B1 (en) | 1996-03-26 | 2003-07-29 | Advanced Technology Materials, Inc. | Solid state white light emitter and display using same |
US5667724A (en) * | 1996-05-13 | 1997-09-16 | Motorola | Phosphor and method of making same |
US6201262B1 (en) | 1997-10-07 | 2001-03-13 | Cree, Inc. | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
DE10051242A1 (de) * | 2000-10-17 | 2002-04-25 | Philips Corp Intellectual Pty | Lichtemittierende Vorrichtung mit beschichtetem Leuchtstoff |
USH2219H1 (en) * | 2000-10-31 | 2008-07-01 | The United States Of America As Represented By The Secretary Of The Navy | Method for coating small particles |
US6791119B2 (en) | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
US6958497B2 (en) | 2001-05-30 | 2005-10-25 | Cree, Inc. | Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures |
US6908723B2 (en) * | 2002-08-15 | 2005-06-21 | Np Photonics, Inc. | Photo-patternable mono-phase fluorinated organometallic sol-gels for integrated optics and methods of fabrication |
AU2003276867A1 (en) | 2002-09-19 | 2004-04-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
US7038370B2 (en) | 2003-03-17 | 2006-05-02 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting device |
US7095056B2 (en) | 2003-12-10 | 2006-08-22 | Sensor Electronic Technology, Inc. | White light emitting device and method |
US7456499B2 (en) | 2004-06-04 | 2008-11-25 | Cree, Inc. | Power light emitting die package with reflecting lens and the method of making the same |
JP2008523169A (ja) | 2004-12-07 | 2008-07-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 放射線源とルミネッセンス材料を含む照明システム |
US9793247B2 (en) | 2005-01-10 | 2017-10-17 | Cree, Inc. | Solid state lighting component |
US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
US8125137B2 (en) | 2005-01-10 | 2012-02-28 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same |
US7821023B2 (en) | 2005-01-10 | 2010-10-26 | Cree, Inc. | Solid state lighting component |
US7564180B2 (en) | 2005-01-10 | 2009-07-21 | Cree, Inc. | Light emission device and method utilizing multiple emitters and multiple phosphors |
CN101128564B (zh) * | 2005-02-28 | 2012-07-25 | 电气化学工业株式会社 | 荧光体及其制造方法及使用了该荧光体的发光元件 |
CN101712870A (zh) | 2005-02-28 | 2010-05-26 | 电气化学工业株式会社 | 荧光体及其制造方法及使用了该荧光体的发光元件 |
JP4814540B2 (ja) | 2005-03-23 | 2011-11-16 | スタンレー電気株式会社 | 蛍光体の製造方法 |
US20060221272A1 (en) | 2005-04-04 | 2006-10-05 | Negley Gerald H | Light emitting diode backlighting systems and methods that use more colors than display picture elements |
US8563339B2 (en) | 2005-08-25 | 2013-10-22 | Cree, Inc. | System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices |
US7847302B2 (en) | 2005-08-26 | 2010-12-07 | Koninklijke Philips Electronics, N.V. | Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature |
CN101336479A (zh) * | 2005-12-01 | 2008-12-31 | 沙诺夫公司 | 防潮磷光体和led发光器件 |
US20070125984A1 (en) | 2005-12-01 | 2007-06-07 | Sarnoff Corporation | Phosphors protected against moisture and LED lighting devices |
TWI421438B (zh) | 2005-12-21 | 2014-01-01 | 克里公司 | 照明裝置 |
US7213940B1 (en) | 2005-12-21 | 2007-05-08 | Led Lighting Fixtures, Inc. | Lighting device and lighting method |
JP4971630B2 (ja) * | 2005-12-21 | 2012-07-11 | Dowaホールディングス株式会社 | 蛍光体およびその製造方法、並びに発光装置 |
JP2009524247A (ja) | 2006-01-20 | 2009-06-25 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | ルミファー膜を空間的に分離することにより固体光発光素子におけるスペクトル内容をシフトすること |
US7655957B2 (en) | 2006-04-27 | 2010-02-02 | Cree, Inc. | Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same |
JP2007324475A (ja) * | 2006-06-02 | 2007-12-13 | Sharp Corp | 波長変換部材および発光装置 |
US7960819B2 (en) | 2006-07-13 | 2011-06-14 | Cree, Inc. | Leadframe-based packages for solid state emitting devices |
US8044418B2 (en) | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
JP2008092549A (ja) | 2006-09-07 | 2008-04-17 | Seiko Epson Corp | バースト制御パルス発生回路、バースト制御パルス発生回路を備えたデジタル変調回路及び電子機器 |
JP5367218B2 (ja) | 2006-11-24 | 2013-12-11 | シャープ株式会社 | 蛍光体の製造方法および発光装置の製造方法 |
US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US7952544B2 (en) | 2007-02-15 | 2011-05-31 | Cree, Inc. | Partially filterless liquid crystal display devices and methods of operating the same |
KR101414243B1 (ko) | 2007-03-30 | 2014-07-14 | 서울반도체 주식회사 | 황화물 형광체 코팅 방법 및 코팅된 황화물 형광체를채택한 발광 소자 |
US20080283864A1 (en) | 2007-05-16 | 2008-11-20 | Letoquin Ronan P | Single Crystal Phosphor Light Conversion Structures for Light Emitting Devices |
US7999283B2 (en) | 2007-06-14 | 2011-08-16 | Cree, Inc. | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
US7802901B2 (en) | 2007-09-25 | 2010-09-28 | Cree, Inc. | LED multi-chip lighting units and related methods |
WO2009049019A1 (en) | 2007-10-10 | 2009-04-16 | Cree Led Lighting Solutions, Inc. | Lighting device and method of making |
US8866169B2 (en) | 2007-10-31 | 2014-10-21 | Cree, Inc. | LED package with increased feature sizes |
DE102007053770A1 (de) * | 2007-11-12 | 2009-05-14 | Merck Patent Gmbh | Beschichtete Leuchtstoffpartikel mit Brechungsindex-Anpassung |
US20090283721A1 (en) | 2008-05-19 | 2009-11-19 | Intematix Corporation | Nitride-based red phosphors |
JP2010198890A (ja) | 2009-02-25 | 2010-09-09 | Canon Inc | 蛍光体基板と画像表示装置、及びこれらの製造方法 |
US20100289044A1 (en) | 2009-05-12 | 2010-11-18 | Koninklijke Philips Electronics N.V. | Wavelength conversion for producing white light from high power blue led |
DE102009049056A1 (de) * | 2009-10-12 | 2011-04-14 | Osram Gesellschaft mit beschränkter Haftung | Verfahren zur Beschichtung eines Silikat-Leuchtstoffs |
US8643038B2 (en) | 2010-03-09 | 2014-02-04 | Cree, Inc. | Warm white LEDs having high color rendering index values and related luminophoric mediums |
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