JP5572305B2 - 発光素子,発光素子を用いた発光装置、及び発光素子に使用される透明基板 - Google Patents
発光素子,発光素子を用いた発光装置、及び発光素子に使用される透明基板 Download PDFInfo
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- JP5572305B2 JP5572305B2 JP2008316343A JP2008316343A JP5572305B2 JP 5572305 B2 JP5572305 B2 JP 5572305B2 JP 2008316343 A JP2008316343 A JP 2008316343A JP 2008316343 A JP2008316343 A JP 2008316343A JP 5572305 B2 JP5572305 B2 JP 5572305B2
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- light emitting
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Classifications
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/14—Layer or component removable to expose adhesive
- Y10T428/1476—Release layer
Description
−(CH2)3NHCOCH3,−(CH2)3NHCOCH2CH3,−(CH2)3NHCOC3H7,−(CH2)3NHCOC4H9,−(CH2)3NHCOC5H11,−(CH2)3NHCOC6H13,−(CH2)3NHCOC7H15,−(CH2)3NHCOC8H17
構造群1は、予め粒子層の粒子表面に−(CH2)3NH2基を有するシランカップリング剤を結合させておいて、その後、対応するカルボン酸をアミノ基と反応させることにより製造する。
−(CH2)3NHCO2CH3,−(CH2)3NHCO2CH2CH3,−(CH2)3NHCO2C3H7,−(CH2)3NHCO2C4H9,−(CH2)3NHCO2C5H11,−(CH2)3NHCO2C6H13,−(CH2)3NHCO2C7H15,−(CH2)3NHCO2C8H17
構造群2は、予め粒子層の粒子表面に−(CH2)3NCO基を有するシランカップリング剤を結合させておいて、その後、対応するアルコールをイソシアネート基と反応させることにより製造する。
Claims (14)
- 電極と透明基板との間に配置された発光層と、
前記発光層と前記透明基板との間に配置された粒子層と、
前記発光層と前記粒子層との間に配置された粘着層と、
前記発光層と前記粘着層との間に配置された透明電極とを有し、
前記粒子層を構成する粒子の屈折率は前記透明電極の屈折率より高いことを特徴とする
発光素子。 - 請求項1に記載の発光素子において、
前記粒子層を構成する粒子の平均粒子径は、80〜200nmであることを特徴とする発
光素子。 - 請求項1に記載の発光素子において、
前記粒子層を構成する粒子は、酸化チタン,酸化ジルコニウム,チタン酸バリウム,チタン酸ストロンチウム、もしくは酸化ビスマスであることを特徴とする発光素子。 - 請求項1に記載の発光素子において、
前記粒子層の平均厚さは、前記粒子の平均粒子径より小さいことを特徴とする発光素子。 - 請求項1に記載の発光素子において、
前記粘着層に無機酸化物からなる粒子が添加されたことを特徴とする発光素子。 - 請求項1に記載の発光素子において、
前記粘着層の貯蔵弾性率は1kパスカル以上100kパスカル以下であることを特徴とする発光素子。 - 請求項1に記載の発光素子を有する発光装置において、
前記発光装置は筐体を有し、
前記透明基板の端部と前記筐体との間に反射層が配置されたことを特徴とする発光装置。 - 請求項6に記載の発光装置において、
前記反射層と前記透明基板の端部との間に前記粒子層及び前記粘着層とが配置されたことを特徴とする発光装置。 - 請求項1に記載の発光素子を複数個有する発光装置において、
前記透明基板,前記粒子層、若しくは前記粘着層が共通化されたことを特徴とする発光装置。 - 請求項1に記載の発光素子を複数個有する発光装置において、
複数のアダプタは、前記発光素子と前記発光装置とが接する面に配置されたことを特徴とする発光装置。 - 請求項10に記載の発光装置において、
前記発光素子に電力を供給する配線が素子ごとに並列に設けられたことを特徴とする発光装置。 - 請求項7に記載の発光装置において、
前記発光素子の発光面は三角形であることを特徴とする発光装置。 - 請求項7に記載の発光装置において、
前記発光素子の発光面は三角形と四角形との組み合わせであることを特徴とする発光装置。 - 電極と透明基板との間に配置された発光層と、
前記発光層と前記透明基板との間に配置された粒子層と、
前記発光層と前記粒子層との間に配置された粘着層と、
前記発光層と前記粘着層との間に配置された透明電極とを有し、
前記粒子層を構成する粒子の屈折率は前記透明電極の屈折率より高い発光素子の製造方
法であって、
前記透明基板上に前記粒子層を形成する工程と、
前記透明電極上に前記粘着層を形成する工程と、
前記粘着層に前記粒子層を貼付けする工程とを有することを特徴とする発光素子の製造
方法。
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JP2008316343A JP5572305B2 (ja) | 2008-12-12 | 2008-12-12 | 発光素子,発光素子を用いた発光装置、及び発光素子に使用される透明基板 |
PCT/JP2009/069275 WO2010067687A1 (ja) | 2008-12-12 | 2009-11-12 | 発光素子,発光素子を用いた発光装置、及び発光素子に使用される透明基板 |
EP09831793.6A EP2378837B1 (en) | 2008-12-12 | 2009-11-12 | Light-emitting element and production method thereof |
US13/133,163 US8575629B2 (en) | 2008-12-12 | 2009-11-12 | Light-emitting element, light-emitting device using the light-emitting element, and transparent substrate used in light-emitting elements |
US14/039,517 US8735912B2 (en) | 2008-12-12 | 2013-09-27 | Light emitting element, light emitting device using the light emitting element, and transparent substrate used in light emitting elements |
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JP2008316343A JP5572305B2 (ja) | 2008-12-12 | 2008-12-12 | 発光素子,発光素子を用いた発光装置、及び発光素子に使用される透明基板 |
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JP2012022997A (ja) * | 2010-07-16 | 2012-02-02 | Jsr Corp | 発光素子および粒子含有層形成用組成物 |
WO2012108482A1 (en) * | 2011-02-11 | 2012-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and display device |
DE102012200084B4 (de) * | 2012-01-04 | 2021-05-12 | Pictiva Displays International Limited | Strahlungsemittierendes organisches bauteil |
US20150311412A1 (en) * | 2012-06-11 | 2015-10-29 | Alexander Potemkin | Optical Adapter Device for Light-Emitting Diodes |
KR101596725B1 (ko) * | 2013-05-22 | 2016-02-24 | 삼성디스플레이 주식회사 | 충전 필름 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
JPWO2014208455A1 (ja) * | 2013-06-26 | 2017-02-23 | コニカミノルタ株式会社 | 電子機器 |
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CN112823435A (zh) * | 2018-07-23 | 2021-05-18 | 康宁公司 | 用于有机发光二极管的具有高折射率纳米颗粒的光抽取结构 |
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US8575629B2 (en) | 2013-11-05 |
JP2010140771A (ja) | 2010-06-24 |
WO2010067687A1 (ja) | 2010-06-17 |
US8735912B2 (en) | 2014-05-27 |
EP2378837A4 (en) | 2013-03-06 |
EP2378837B1 (en) | 2019-06-26 |
EP2378837A1 (en) | 2011-10-19 |
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US20140021498A1 (en) | 2014-01-23 |
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