TWI833508B - 微型led顯示器及其製造方法 - Google Patents
微型led顯示器及其製造方法 Download PDFInfo
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Abstract
本發明之課題在於提供一種不使用每一色種類不同之微型LED,且使發光效率提高之微型LED顯示器及其製造方法。
微型LED顯示器包括複數個微型UV-LED晶片1;及具備將來自微型UV-LED晶片1之紫外線分別波長變換為紅色、綠色、藍色之螢光體28R、28G、28B之膜狀之波長變換層32。微型UV-LED晶片1之側面形成傾斜面,微型UV-LED晶片1由反射自側面射出之紫外線之反射障壁層24包圍。
Description
本發明係關於一種微型LED顯示器及其製造方法。
近年來,作為AR(擴增實境)或VR(虛擬實境)用之新一代顯示器,微型LED顯示器備受期待。由於微型LED之晶片尺寸為100μm以下而極小,因此難以在晶圓面內使發光強度均一。
在專利文獻1中揭示了一種構成,即以藉由防止圖像顯示元件向相鄰像素之漏光,強化圖像顯示元件之正面方向之光輸出來提高發光效率為課題,包含驅動電路基板,其包含陣列狀地排列之微型發光元件與將電流供給至微型發光元件使其發光之驅動電路、及配光控制部(70),其配置於微型發光元件之光射出面上,在配光控制部之周圍,配置不供微型發光元件射出之光透過之隔壁。
[專利文獻1] 日本專利特開2021-144098號公報
然而,在晶片尺寸為100μm以下之微型LED顯示器中,有以下課題:
(1)當微細化之微型LED晶片之晶片尺寸為50μm以下時,使用GaP材料之紅色LED晶片之發光效率尤其會急遽劣化
(2)當在紅色中使用GaP材料,並在藍色、綠色中使用InGaN材料時,由於驅動電壓與電流不同,不僅控制變得複雜,而且電氣特性不一致,因此產生顏色不均
(3)將紅色、綠色、藍色之3色之微型LED晶片就每一色進行取放之安裝需要時間,製造成本增加。
本發明係鑒於該等課題而成者,其目的在於,提供一種不使用每一色種類不同之微型LED,且使發光效率提高之微型LED顯示器及其製造方法。
本發明係關於一種微型LED顯示器,其包括:第1導電型之電極;複數個微型LED,其在上述第1導電型之電極上間隔形成,分別發射波長405nm以下之紫外線;第2導電型之電極,其在上述複數個微型LED之各者上形成;反射障壁層,其豎立設置於上述複數個微型LED之間,反射來自上述微型LED之側面之光;膜狀之配線基板,其以由上述複數個微
型LED之中彼此相鄰之3個微型LED形成1像素之方式,具有與上述3個微型LED之上述第2導電型之電極連接之配線構造;膜狀之波長變換層,其設置於上述配線基板上,具備將來自上述3個微型LED之光分別波長變換為紅色、綠色、藍色之螢光體;且上述微型LED之側面係以上述微型LED之寬度自上述第1導電型之電極向上述第2導電型之電極逐漸變窄之方式形成傾斜面,上述反射障壁層係平行於上述複數個微型LED之積層方向、且以與上述微型LED相等之高度豎立設置。
在本發明之一實施形態中,進一步具有填充於上述微型LED與上述反射障壁層之間的樹脂,上述樹脂係已使螢光體分散之樹脂。
在本發明之其他實施形態中,上述第1導電型之電極為銅鎢之導電性基板。
又,本發明係關於一種微型LED顯示器之製造方法,其包括:在藍寶石基板上以GaN緩衝層、n型層、發光層、p型層之順序使結晶生長之步驟;在上述p型層上蒸鍍形成透明電極之步驟;在上述透明電極上接合導電性基板之步驟;將上述藍寶石基板與上述GaN緩衝層剝離之步驟;藉由自上述n型層側進行蝕刻形成複數個微型LED,且在上述微型LED之側面形成傾斜面之步驟;在上述複數個微型LED之各者蒸鍍形成n電極之步驟;在上述複數個微型LED之上述n電極以外之部分形成鈍化層之步驟;在上述複數個微型LED之間豎立設置形成反射障壁層之步驟;以由上述複數個微型LED之中彼此相鄰之3個微型LED形成1像素之方
式,在上述n電極上形成膜狀之配線基板之步驟;形成具備在上述配線基板上將來自上述3個微型LED之光分別波長變換為紅色、綠色、藍色之螢光體之膜狀之波長變換層之步驟;且上述微型LED之側面係以上述微型LED之寬度自上述導電性基板向上述n型層逐漸變窄之方式形成傾斜面,上述反射障壁層係平行於上述複數個微型LED之積層方向、且以與上述微型LED相等之高度豎立設置。
在本發明之一實施形態中,同時實施在上述複數個微型LED之間豎立設置形成反射障壁層之步驟;及以由上述複數個微型LED之中彼此相鄰之3個微型LED形成1像素之方式,在上述n電極上形成膜狀之配線基板之步驟。
在本發明之其他實施形態中,於在上述複數個微型LED之間豎立設置形成反射障壁層之步驟之後,進一步具有在上述微型LED與上述反射障壁層之間填充樹脂之步驟,上述樹脂係已使螢光體分散之樹脂。
在本發明進而其他之實施形態中,上述導電性基板為銅鎢。
根據本發明,可提供一種不使用每一色種類不同之微型LED,且使發光效率提高之微型LED顯示器及其製造方法。
1:微型LED(微型UV-LED晶片)
10:基板
12:透明電極
14:p型層
16:發光層
18:n型層
20:n電極
22:鈍化層
24:反射障壁層
25:n型電極
26:配線基板
27:驅動電路
28B:B(藍色)螢光體
28G:G(綠色)螢光體
28R:R(紅色)螢光體
29B,29G,29R:矽樹脂
30:障壁材
31:藍寶石基板
32:波長變換層
33:GaN緩衝層
圖1係顯示實施形態之微型LED之基本構成之示意性剖視圖。
圖2A係實施形態之微型LED顯示器之示意性剖視圖。
圖2B係實施形態之微型LED顯示器之示意性平面圖。
圖3係顯示實施形態之微型LED顯示器之製造方法之示意性剖視圖(其1)。
圖4係顯示實施形態之微型LED顯示器之製造方法之示意性剖視圖(其2)。
圖5係顯示實施形態之微型LED顯示器之製造方法之示意性剖視圖(其3)。
圖6係顯示實施形態之微型LED顯示器之製造方法之示意性剖視圖(其4)。
圖7係顯示實施形態之微型LED顯示器之製造方法之示意性剖視圖(其5)。
圖8係顯示實施形態之微型LED顯示器之製造方法之示意性剖視圖(其6)。
圖9係顯示實施形態之微型LED顯示器之製造方法之示意性剖視圖(其7)。
圖10係實施形態之膜狀配線基板之平面圖。
圖11係顯示實施形態之微型LED顯示器之製造方法之示意性剖視圖(其8)。
圖12係顯示第1變化例之微型LED顯示器之製造方法之示意性剖視圖。
圖13係顯示第2變化例之微型LED顯示器之製造方法之示意性剖視圖(其1)。
圖14係顯示第2變化例之微型LED顯示器之製造方法之示意性剖視圖(其2)。
以下,基於圖式,針對本發明之實施形態進行說明。
圖1顯示本實施形態中之微型LED顯示器所使用之微型LED之基本之示意性剖視圖。
微型LED1為在其晶片尺寸為矩形之平面形狀中,至少其中一邊為100μm以下,更佳者為50μm以下,且發射波長405nm以下之紫外線(UV)之LED。本實施形態之微型LED1不是電極配置為並行之倒裝晶片構造,而是電極配置為上下設置之立式(Vertical,垂直)之V晶片構造。
微型LED1在厚度100μm左右之導電性之例如銅鎢(CuW)之基板10上,逐漸積層ITO之透明電極12、p型層14、發光層16、n型層18、n電極20。基板10相當於第1導電型之電極,n電極20相當於第2導電型之電極。
p型層14由p-GaN(GaN;Mg)接觸層、及(AlGaN;Mg/GaN;Mg)p-SLS(超晶格構造)層構成。即,p-GaN接觸層經由ITO之透明電極12於具有散熱性之基板10上形成。
發光層16由(InGaN/AlGaN)MQW(多重量子井)層構成。
n型層18由(AlInGaN)/(InGaN;Si)n-SLS(超晶格構造)層、及(GaN;Si)接觸層構成。
此處,例如(GaN;Si)表示摻雜有Si之GaN。該構成中之發光波長具體為385nm,但除此之外,亦可為例如400nm。雖然385nm及400nm之基本磊晶構造相同,但由於能帶間隙之關係,與400nm相比385nm之(InGaN/AlInGaN)MQW發光層16之Al含有量多,In含有量少。
又,微型LED1之側面係以微型LED1之寬度相對於自基板10至n電極20之積層方向逐漸變窄之方式形成傾斜面(錐形),形成有該傾斜面之側面形成SiO2之鈍化層22。傾斜面之角度雖為任意,但就將萃取效率極大化之觀點而言,較佳為例如45度。
在微型LED1中,一般伴隨微型尺寸化而側面之面積比相對地增大,但在本實施形態中藉由設為V晶片構造而非倒裝晶片構造,提高來自側面之光萃取效率。又,藉由將該側面之形狀設為傾斜面形狀,可使發光
層16之側面的面積較側面設為垂直時大,進一步提高來自側面之光萃取效率。
又,藉由在p電極側使用銅鎢等散熱特性優異之基板10,可提高散熱性,投入更大之電流,故可抑制因發熱而引起之發光效率之降低。
圖2A顯示使用圖1所示之微型LED1(以下,將其稱為微型UV-LED晶片1)之微型LED顯示器之示意性剖視圖。
在共通之銅鎢(CuW)之基板10上彼此間隔地形成複數個(在圖中僅顯示3個)微型UV-LED晶片1。此外,在平面上將複數個微型UV-LED晶片1二維陣列狀地配置。
在相鄰之微型UV-LED晶片1之間,平行於微型UV-LED晶片1之積層方向、換言之在基板10之表面之法線方向平行地豎立設置反射障壁層24。反射障壁層24具有防止來自相鄰之微型UV-LED晶片1之光向其他微型UV-LED晶片1之洩漏,且反射來自微型UV-LED晶片1之橫向方向之光而使朝向光萃取方向(圖中之上方向)之光萃取效率增大之功能,因此,反射來自微型UV-LED晶片1之側面之光(波長405nm以下之紫外線)之材料,例如由鋁構成。又,反射障壁層24之高度與微型UV-LED晶片1之高度相同。複數個微型UV-LED晶片1其周圍分別被反射障壁層24包圍而彼此分割。
圖2B顯示示意性平面圖,該平面圖顯示微型UV-LED晶片1與反射障壁層24之位置關係。反射障壁層24以包圍平面形狀為矩形之微型UV-LED晶片1之方式在其周圍形成。此外,如自圖2A所知般,反射障壁層24於SiO2之鈍化層22之上形成。由於微型UV-LED晶片1之周圍被反射障壁層24包圍,因此自發光層16之側面射出之光全部由反射障壁層24反射。
再次返回圖2A,在複數個微型UV-LED晶片1上,形成膜狀之配線基板26。在膜狀之配線基板26,形成有與相鄰之3個微型UV-LED晶片1之各者之n電極20對向之3個n型電極,以相鄰之3個微型UV-LED晶片1之各者之n電極20與3個n型電極接合之方式將膜狀之配線基板26貼合。此時,由於反射障壁層24之高度與微型UV-LED晶片1之高度相同,因此使膜狀之配線基板26之貼合容易化、均一化。配線基板26具備驅動複數個微型UV-LED晶片1之驅動電路。驅動電路包含列選擇電路,其選擇二維陣列狀地配置之微型UV-LED晶片1之各列;行選擇電路,其選擇各行;圖像處理電路,其生成來自輸入信號之發光信號。
在膜狀之配線基板26上,進一步形成紫外線透過性高之膜狀之波長變換層32,其實施R螢光體28R、G螢光體28G、B螢光體28B,且具備將該等螢光體28R、28G、28B彼此隔開之障壁材30。R螢光體28R例如在透明樹脂固化物中分散螢光體粉末而構成,該螢光體粉末接受來自微型UV-LED晶片1之紫外線並發射較該紫外線波長更長之紅色之光。作為紅
色螢光體粉末,例如為LOS:Eu。又,作為綠色螢光體粉末,例如為BAM:Eu,Mn,作為藍色螢光體粉末,例如為BAM:Eu,但不限定於此。此處,LOS為La2O2S,BAM為(Ba,Mg)Al10O17。
在圖2A中,在相鄰之3個微型UV-LED晶片1中之設置於左側之微型UV-LED晶片1上配置R螢光體28R,在設置於中央之微型UV-LED晶片1上配置G螢光體28G,在設置於右側之微型UV-LED晶片1上配置B螢光體28B,由該等相鄰之3個微型UV-LED晶片1及螢光體28R、28G、28B構成1個像素。來自相鄰之3個微型UV-LED晶片1中之設置於左側之微型UV-LED晶片1之紫外線,由R螢光體28R變換為紅色之波長並向外部射出。來自設置於中央之微型UV-LED晶片1之紫外線,由G螢光體28G變換為綠色之波長並向外部射出。來自設置於右側之微型UV-LED晶片1之紫外線,由B螢光體28B變換為藍色之波長並向外部射出。
又,自相鄰之3個微型UV-LED晶片1中之設置於左側之微型UV-LED晶片1之傾斜側面射出之紫外線,藉由以包圍微型UV-LED晶片1之方式形成之反射障壁層24而反射,其一部分由R螢光體28R變換為紅色之波長並向外部射出。其他微型UV-LED晶片1亦同樣。
藉此,在本實施形態中,藉由以同一種類之微型UV-LED晶片1激發紅色、綠色、藍色之螢光體而獲得全色彩,故可不取放地藉由轉印進行質量轉移。
又,由於微型UV-LED晶片1之光譜中可見光成分微弱,故即便UV-LED之特性有不一致,對螢光體之發光色之影響亦小。
又,伴隨微型UV-LED晶片1之微型尺寸化側面之面積比相對地增大,故可藉由V晶片化使來自側面之光萃取效率提高。並且,此等光萃取效率之提高為藉由微型UV-LED晶片1之側面之傾斜面化與反射障壁層24之並用而進一步顯著者。
又,可藉由使用銅鎢(CuW)之基板10提高散熱性,而投入更大之驅動電流。又,亦可抑制由驅動時之發熱引起之發光效率之降低。
其次,針對本實施形態中之微型LED顯示器之製造方法進行說明。
圖3至圖11係顯示微型LED顯示器之製造方法之示意性剖視圖。首先,如圖3所示,在藍寶石基板31上,以GaN緩衝層33、n型層18、發光層16、p型層14之順序使用有機金屬化學氣相沉積法(MOCVD法)進行結晶生長,形成LED構造。此處,在n型層18含有SLS(超晶格構造)層,在p型層14亦含有SLS(超晶格構造)層。又,在發光層16含有(InGaN/AlGaN)之MQW層。
並且,在p型層之上蒸鍍形成ITO之透明電極12,在其上接合厚度100μm左右之具備導電性之基板10,例如銅鎢(CuW)之基板10。
其次,如圖4所示,將藍寶石基板31與GaN緩衝層33剝離之後,如圖5所示,藉由自n層側進行隔離蝕刻形成尺寸100μm以下、更佳者係50μm以下之複數個微型LED晶片。在該隔離蝕刻之步驟中,以微型LED晶片之側面成為傾斜面(錐形面)之方式進行蝕刻。習知藉由蝕刻之傾斜面之形成技術。傾斜面之角度,即相對於微型LED晶片之積層方向而成之角度例如設為45度。
其次,如圖6所示,在被隔離之複數個微型LED晶片之各者之n型層表面蒸鍍形成n電極20。
其次,如圖7所示,在全部之微型LED晶片之n層側之n電極20以外之區域形成SiO2之鈍化層22而鈍化。
其次,如圖8所示,在相鄰之微型LED晶片之間,例如形成由如鋁般反射率高之材料組成之反射障壁層24。
其次,如圖9所示,將具有n型電極25之膜狀之配線基板26貼合,以使全部之微型LED晶片之n電極20與n型電極25接合。
圖10顯示膜狀之配線基板26之一部分平面圖。為相鄰之3個微型LED晶片所對應之1像素份之構成。配置3個n型電極25,該等之3個n型電極25連接於驅動電路27。
並且,如圖11所示,將實施有由障壁材30彼此隔開之R螢光體28R、G螢光體28G、B螢光體28B之膜狀之波長變換層32貼合於微型LED晶片之上。
在如以上之步驟中,藉由製造微型LED顯示器,可替代取放而進行質量轉移,可縮短安裝所需要之時間。即,在個別地製造RGB或UV之LED晶片,並將該等用於像素來製造顯示器之情形下,必須大量且高精度地安裝50μm以下之極小之LED,但與個別地拾取該等LED晶片並個別地安裝之情形相比可大幅地縮短時間。
又,由於將藍寶石基板31與GaN緩衝層33剝離而製造,故不具備使用激光切割藍寶石基板31之步驟,亦無肇因於雷射照射之發熱而導致對LED晶片側面之損傷,可藉此避免發光效率之降低。亦即,採用倒裝晶片構造,在為了確保強度,將紅色之GaP類LED貼合於藍寶石基板,與綠色、藍色之InGaN類LED同樣地藉由準分子雷射進行切割之情形下,藉由該切割步驟晶片側面受到由熱引起之較大損傷,由於黑化等使晶片之發光效率降低,但在本實施形態之製造方法中,可防止由相關之熱所引起之損傷而避免發光效率之降低。
又,藉由使用V晶片構造而非電極配置並行之倒裝晶片構造,因而無需配置倒裝晶片之n電極用之空間,故自生長晶圓可製造之晶片數增大(約2倍)。
進而,在隔離蝕刻之步驟中,藉由在LED晶片側面形成傾斜面使發光層側面之面積增大,與平行於LED晶片之積層方向地豎立設置之反射障壁層24相輔相成,提高自橫向方向之光萃取效率。
在實施形態中,在微型LED晶片之間豎立設置反射障壁層24,在其後將膜狀之配線基板26貼合,該反射障壁層24亦可依設置於微型LED晶片之間之方式定位,同時將具備反射障壁層24之膜狀之配線基板26貼合。
圖12顯示第1變化例之剖視圖。如圖7所示,在形成SiO2之鈍化層22之後,將具備配合像素尺寸而形成之反射障壁層24之膜狀之配線基板26以反射障壁層24插入微型LED晶片之間之方式貼合,微型LED晶片之各者之n電極20與配線基板26之n型電極25接合。
根據該製造方法,由於配線基板26與反射障壁層24為一體故可將反射障壁層24之配置位置更強固地固定,且可使製造步驟更簡易化。
又,在本實施形態中,在微型LED晶片之間豎立設置反射障壁層24,在其後將膜狀之配線基板26貼合,亦可於豎立設置反射障壁層24後,在微型LED晶片與反射障壁層24之間的間隙填充矽樹脂,在其後將膜狀之配線基板26貼合;上述矽樹脂係已使螢光體分散之矽樹脂。
圖13顯示第2變化例之剖視圖。如圖8所示,在微型LED晶片之間豎立設置反射障壁層24之後,在微型LED晶片與反射障壁層24之間的間隙填充已使螢光體分散之矽樹脂29R、29G、29B。並且,如圖14所示般將膜狀之配線基板26貼合。
根據該構成而有以下效果:為了填充已使螢光體分散之矽樹脂,在如圖11般將膜狀之配線基板26貼合之後,無需進一步載置螢光體,而可簡化步驟。此外,根據需要,在填充矽樹脂之後,亦可將膜狀之波長變換層32貼合於微型LED晶片之上。
1:微型LED(微型UV-LED晶片)
10:基板
24:反射障壁層
26:配線基板
28B:B(藍色)螢光體
28G:G(綠色)螢光體
28R:R(紅色)螢光體
30:障壁材
32:波長變換層
Claims (9)
- 一種微型LED顯示器,其包括:第1導電型之電極;複數個微型LED,其在上述第1導電型之電極上間隔形成,分別發射波長405nm以下之紫外線;第2導電型之電極,其在上述複數個微型LED之各者上形成;反射障壁層,其豎立設置於上述複數個微型LED之間,反射來自上述微型LED之側面之光;膜狀之配線基板,其以由上述複數個微型LED之中彼此相鄰之3個微型LED形成1像素之方式,具有與上述3個微型LED之上述第2導電型之電極連接之配線構造;及膜狀之波長變換層,其設置於上述配線基板上,具備將來自上述3個微型LED之光分別波長變換為紅色、綠色、藍色之螢光體;且上述微型LED之側面係以上述微型LED之寬度自上述第1導電型之電極向上述第2導電型之電極逐漸變窄之方式形成傾斜面,上述反射障壁層係平行於上述複數個微型LED之積層方向、且以與上述微型LED相等之高度豎立設置。
- 如請求項1之微型LED顯示器,其中,進一步具有填充於上述微型LED與上述反射障壁層之間的樹脂,上述樹脂係已使螢光體分散之樹脂。
- 一種微型LED顯示器,其包括:第1導電型之電極; 複數個微型LED,其在上述第1導電型之電極上間隔形成,分別發射波長405nm以下之紫外線;第2導電型之電極,其在上述複數個微型LED之各者上形成;反射障壁層,其豎立設置於上述複數個微型LED之間,反射來自上述微型LED之側面之光;膜狀之配線基板,其以由上述複數個微型LED之中彼此相鄰之3個微型LED形成1像素之方式,具有與上述3個微型LED之上述第2導電型之電極連接之配線構造;樹脂,其被填充於上述微型LED與上述反射障壁層之間,為已使螢光體分散之樹脂,上述螢光體係將來自上述3個微型LED之光分別波長變換為紅色、綠色、藍色;且上述微型LED之側面係以上述微型LED之寬度自上述第1導電型之電極向上述第2導電型之電極逐漸變窄之方式形成傾斜面,上述反射障壁層係平行於上述複數個微型LED之積層方向、且以與上述微型LED相等之高度豎立設置。
- 如請求項1至3中任一項之微型LED顯示器,其中,上述第1導電型之電極為銅鎢之導電性基板。
- 一種微型LED顯示器之製造方法,其包括:在藍寶石基板上,以GaN緩衝層、n型層、發光層、p型層之順序進行結晶生長之步驟;在上述p型層上蒸鍍形成透明電極之步驟;在上述透明電極上接合導電性基板之步驟; 將上述藍寶石基板與上述GaN緩衝層剝離之步驟;藉由自上述n型層側進行蝕刻形成複數個微型LED,且在上述微型LED之側面形成傾斜面之步驟;在上述複數個微型LED之各者蒸鍍形成n電極之步驟;在上述複數個微型LED之上述n電極以外之部分形成鈍化層之步驟;在上述複數個微型LED之間豎立設置形成反射障壁層之步驟;以由上述複數個微型LED之中彼此相鄰之3個微型LED形成1像素之方式,在上述n電極上形成膜狀之配線基板之步驟;及形成具備在上述配線基板上將來自上述3個微型LED之光分別波長變換為紅色、綠色、藍色之螢光體之膜狀之波長變換層之步驟;且上述微型LED之側面係以上述微型LED之寬度自上述導電性基板向上述n型層逐漸變窄之方式形成傾斜面,上述反射障壁層係平行於上述複數個微型LED之積層方向、且以與上述微型LED相等之高度豎立設置。
- 如請求項5之微型LED顯示器之製造方法,其中,同時實施在上述複數個微型LED之間豎立設置形成反射障壁層之步驟;及以由上述複數個微型LED之中彼此相鄰之3個微型LED形成1像素之方式,在上述n電極上形成膜狀之配線基板之步驟。
- 如請求項5之微型LED顯示器之製造方法,其中,於在上述複數個微型LED之間豎立設置形成反射障壁層之步驟之後,進一步具有在上述微型LED與上述反射障壁層之間填充樹脂之步驟; 上述樹脂係已使螢光體分散之樹脂。
- 一種微型LED顯示器之製造方法,其包括:在藍寶石基板上,以GaN緩衝層、n型層、發光層、p型層之順序進行結晶生長之步驟;在上述p型層上蒸鍍形成透明電極之步驟;在上述透明電極上接合導電性基板之步驟;將上述藍寶石基板與上述GaN緩衝層剝離之步驟;藉由自n型層側進行蝕刻形成複數個微型LED,且在上述微型LED之側面形成傾斜面之步驟;在上述複數個微型LED之各者蒸鍍形成n電極之步驟;在上述複數個微型LED之上述n電極以外之部分形成鈍化層之步驟;在上述複數個微型LED之間豎立設置形成反射障壁層之步驟;以由上述複數個微型LED之中彼此相鄰之3個微型LED形成1像素之方式,在上述n電極上形成膜狀之配線基板之步驟;及在上述微型LED與上述反射障壁層之間填充樹脂之步驟,上述樹脂係已使螢光體分散之樹脂,上述螢光體係將來自上述3個微型LED之光分別波長變換為紅色、綠色、藍色;且上述微型LED之側面係以上述微型LED之寬度自上述導電性基板向上述n型層逐漸變窄之方式形成傾斜面,上述反射障壁層係平行於上述複數個微型LED之積層方向、且以與上述微型LED相等之高度豎立設置。
- 如請求項5至8中任一項之微型LED顯示器之製造方法,其中,上述導電性基板為銅鎢。
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US20200287103A1 (en) * | 2019-03-08 | 2020-09-10 | Sharp Kabushiki Kaisha | Image display device |
US20200357846A1 (en) * | 2017-11-08 | 2020-11-12 | Seoul Viosys Co., Ltd. | Light-emitting diode unit for display comprising plurality of pixels and display device having same |
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US20200357846A1 (en) * | 2017-11-08 | 2020-11-12 | Seoul Viosys Co., Ltd. | Light-emitting diode unit for display comprising plurality of pixels and display device having same |
US20200287103A1 (en) * | 2019-03-08 | 2020-09-10 | Sharp Kabushiki Kaisha | Image display device |
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