CN106159055B - 具有减小的外延应力的发光器件 - Google Patents

具有减小的外延应力的发光器件 Download PDF

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CN106159055B
CN106159055B CN201610808930.9A CN201610808930A CN106159055B CN 106159055 B CN106159055 B CN 106159055B CN 201610808930 A CN201610808930 A CN 201610808930A CN 106159055 B CN106159055 B CN 106159055B
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luminescent device
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cte
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copper
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CN106159055A (zh
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F.S.迪亚纳
Y.魏
S.夏亚菲诺
B.J.莫兰
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Koninklijke Philips NV
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Abstract

元件被添加到发光器件以减小发光器件中由热循环造成的应力。可替换地或者附加地，基于材料的热膨胀系数和它们的相对成本选择材料用于在发光器件中形成接触，铜合金不如金昂贵并且提供比铜低的热膨胀系数。发光器件的元件也可以被结构化从而在热循环期间分配应力。

Description

具有减小的外延应力的发光器件
相关申请
本申请是于2011年10月7日提交的申请号为201180049451.9、发明名称为“具有减小的外延应力的发光器件”的中国专利申请的分案申请。
技术领域
本发明涉及发光器件的领域，并且具体地涉及具有减小的外延应力的发光器件(LED)的制造。
背景技术
随着发光二极管(LED)的发光能力持续改善，它们在传统照明应用中的使用持续增加，以成本有效方式提供可靠持久产品的竞争压力也持续增加。由于这些器件的日益增长的市场，即使LED产品成本较低，每个器件节约甚至几分钱可以对利润率具有显著影响。
为了减小LED器件的成本，铜可以取代金作为用于LED管芯的电接触的体金属。然而金仍然是提供倒装芯片配置中LED与其载具之间的高效和可靠的电和机械互连的优选金属，在该倒装芯片配置中LED管芯的上层附着到载具，并且来自LED的光从与载具相对的表面发射。
图1A说明发光器件100的传统倒装芯片载具配置。载具可包括接触120形成于其上的底座110；接触可以被电镀125以促进与倒装芯片接触150的连接145。倒装芯片可包括生长衬底170、发光元件160、互连层165和接触150。在倒装芯片附着到载具之后，通常为蓝宝石或其它刚性材料的生长衬底170可以被移除。
图1A中说明通过通道130分离的两个接触120，该通道提供两个接触130之间的电隔离。按照相似方式，接触150被说明为通过通道135分离。通道135可以小于通道130，从而增加由接触150提供到互连层165和发光元件170的支撑量。在移除生长衬底170期间，这种增加的支撑会是特别有利的。另外，通道130可以大于通道135，从而在倒装芯片被放置在载具上时容纳潜在的对齐不准确。
图1B说明在生长衬底170被移除之后，当发光器件100经历高温时可能造成的示例性热形变190。此形变190可能在制造期间以及每次发光器件100从切断到接通循环时出现。形变190会对互连层165和发光元件160引起反复的应力，并且会造成器件100永久失效。附加地，发光器件的上层175可以被蚀刻以增大发光元件170的光提取效率，这可能导致上层175更易遭受应力引起的失效。
发明内容
将有利的是，减轻由热循环造成的发光器件中应力的量。将有利的是，减轻此应力而不显著增加发光器件的成本。
在此发明的实施例中，元件被添加到发光器件以减小由热循环造成的应力。可替换地或者附加地，基于材料的热膨胀系数和它们的相对成本选择材料用于在发光器件中形成接触，铜合金提供比铜低的热膨胀系数。发光器件的元件也可以被结构化从而在热循环期间分配应力。
该发光器件可包括：载具；发光结构，其具有金属层，该金属层具有通过通道分离的接触；以及一个或多个元件，其被添加以减小发光结构中通道附近的热致应力。所添加的元件例如可包括：发光结构中金属层和发光元件之间的缓冲层，金属层中的一个或多个间隙，通道中的填料材料，载具上的接触之间的填料材料，以及在毗邻通道的区域中的附加微凸块。
发光器件也可以或者可替换地使用具有较低CTE的合金用于该金属层。可以使用铜合金，其例如包括CuNi、CuNiTi、CuW、CuFe和CuMo。该合金的CTE优选地低于铜的CTE(约16ppm/K)，更优选地小于10ppm/K，以及更优选地小于8ppm/K。
附图说明
参考附图更详细地并且通过示例方式解释本发明，在附图中：
图1A-1B说明在载具发光器件上的示例性倒装芯片。
图2说明在金属层上具有缓冲层的示例性发光器件。
图3说明具有毗邻通道的增加密度的互连材料的示例性发光器件。
图4说明具有添加到金属层的间隙的示例性发光器件。
相同附图标记在各图中始终表示相似或对应的特征或功能。附图被包括用于说明目的并且不是旨在限制本发明的范围。
具体实施方式
在下述说明书中，出于解释而非限制的目的，阐述了诸如具体架构、界面、技术等的特定细节，从而提供对本发明构思的彻底理解。然而本领域技术人员将显见，本发明可以在背离这些特定细节的其它实施例中实践。按照类似方式，此说明书的文本是针对如各图中说明的示例性实施例，并且不是旨在将所要求保护的发明限制为超出权利要求中明确包括的限制。出于简化和清楚的原因，省略了对公知器件、电路和方法的详细描述，从而不由于不必要的细节而模糊本发明的说明书。
为了便于参考，因为应力会在发光元件160的最上/表面层175(下文称为外延层)表现得最显著，此公开内容将解决在外延层175处的应力，不过本领域技术人员将意识到应力引起的失效会出现在发光元件160或互连165中的任何位置。因此，诸如'外延层开裂'的术语被解释为'外延层或者外延层下的任何层开裂'。按照类似方式，包括接触150的层可包括接触以外的元件；为了便于参考，术语'金属层150'在下文用于表示对发光元件160提供支撑的金属层。
金已经表现为用于形成图1A和1B的发光器件的金属层150的合适材料。为了减小成本，已经提出使用铜替代金用于此金属层150。然而，铜到铜互连不会为发光器件100提供期望可靠性；因此，金可以被用作连接材料145，其可以为微凸块层的形式。按此方式，如果金属层120的电镀层125也是金，则金到金互连可以被形成，从而提供倒装芯片和载具之间更可靠的电和/或热互连。
铜具有110GPa的杨氏模量，该杨氏模量大于金的杨氏模量，金的杨氏模量为77GPa(或者经退火的金丝为26GPa)。此外，铜具有比金小得多的塑性效应。因此，将铜用于金属层150减小了如果/当生长衬底170被移除时外延层175开裂的可能性。然而，在热循环期间，铜金属层将引入比金金属层显著更大的形变190，这会增大在热循环期间外延层175开裂的可能性。
另外，如果金微凸块145被用在铜金属层150和载具之间，由铜金属层150造成的形变190的量可能将更显著，因为金是相对柔顺的材料，允许铜金属层150在通道135的边缘抬升得甚至更远。
在实施例中，被选择用于金属层150的材料是基于其热膨胀系数(CTE)选择。具体地，具有比铜低的热膨胀系数的合金可以用于形成金属层150。例如，此合金可包括CuNi、CuNiTi、CuW、CuFe、CuMo等。NiTi合金会是非常有效的，因为它具有负CTE。
铜在20-250C的温度范围内具有16-18.5ppm/K的CTE。此CTE远高于用于形成发光器件的大多数其它材料，并且远高于氧化铝的CTE，氧化铝可以被用作载具，具有小于10ppm/K的CTE。将铜与低或甚至负CTE材料形成合金将提供CTE比铜小的合金。
有限元分析(FEA)已经演示了当金属层的CTE从18ppm/K减小到8ppm/K时，由热循环造成的最大应力可以从1481MPa向下减小到384.5MPa。为了获得8ppm/K的CTE，可以使用电镀工艺形成Ni、TiNi、W、Fe、Mo等等的铜合金。具体地，Ti0.507Ni0.493合金具有-21ppm/K的负CTE，并且会是最有效的。
如图2中说明，可替换地或者附加地，诸如金或铝的柔顺金属化层210可以被引入在金属层150和互连160之间，从而充当金属层150和互连165之间的缓冲以吸收一些由热循环造成的应力。
诸如金或铝的较软材料的层210可以被应用，对应于用于形成金属层150的图案。此层210充当缓冲以减轻金属层150与上层160和165之间的CTE失配。已经估计1μm厚金层可以将外延层150中的最大主应力减小多达42%，并且3μm厚金层可以将外延层150中的最大主应力减小49%。代替此柔顺材料的连续层，可以使用一层微凸块进一步增强此缓冲层的柔顺性。
另外，可替换地或附加地，可以减小微凸块层145的柔顺性。正如引入缓冲以吸收一部分由热循环造成的形变那样，减小微凸块层的柔顺性将有助于约束此畸变。例如通过下述可以减小柔顺性：通过减小微凸块层145的高度，或者特别是在通道135附近，如在图3的310所说明，通过增加微凸块的密度或尺寸。
可替换地或附加地，通道区域130或135可以用具有与金属层150的材料更接近的CTE的材料填充，由此提供更加热一致的层，减小畸变190。
LED 100可以用硅树脂包覆成形，该硅树脂被成形或定形以形成透镜。由于透镜包覆成形材料将可能流入通道130和135，并且会具有大约200ppm/K的CTE，其热膨胀将进一步增大金属层150的畸变以及外延层175中的相应应力。通过用更低CTE的材料填充载具侧面上的通道130，通道中的热膨胀以及来自此膨胀的效应将被减小。另外，通过用具有与金属层150的CTE更接近的CTE的材料填充通道135，金属层150的膨胀和翘曲将减小。
如图4中说明，可替换地或者附加地，金属层150可以被结构化或图案化以减小由热循环造成的应力。
例如，用于形成金属层150的掩模可包括小的间隙或沟槽410，即未金属化区域，该未金属化区域用于重新分配金属层150与上层160和165之间的CTE失配的效应。这些间隙410使由于层150热膨胀在上层160和165中引发的横向应力和应变分裂，由此也减轻在通道135上方的区域的应力。
尽管本发明已经在附图和前述说明书中予以详细说明和描述，这种说明和描述被认为是说明性或示例性的，而不是限制性的；本发明不限于所公开的实施例。
本领域技术人员在实践所要求保护的发明时，通过研究附图、公开内容和所附权利要求可以理解和达成对所公开实施例的其它变动。在权利要求中，措辞"包括"不排除其它元件或步骤，并且不定冠词"一"("a"或"an")不排除多个。单个处理器或其它单元可以完成在权利要求中列举的若干项目的功能。在互不相同的从属权利要求中阐述某些措施的纯粹事实并不表示不能有利地使用这些措施的组合。计算机程序可以存储/分配于与其它硬件一起或者作为其它硬件的一部分一起被供应的合适介质，诸如光学存储介质或固态介质，但是也可以以其它形式分配，诸如经由因特网或其它有线或无线远程通信系统。权利要求中的任何附图标记不应解读为限制范围。

Claims (5)

1.一种发光器件，包括：
载具，其具有通过至少一个第一通道(130)分离的第一接触(120)，以及
发光结构，其具有金属层，该金属层具有通过至少一个第二通道(135)分离的第二接触(150)，
其中该金属层包括在20-250℃的温度范围内具有比铜的CTE小的CTE的合金。
2.根据权利要求1的发光器件，其中该合金包括铜合金。
3.根据权利要求2的发光器件，其中该铜合金包括下述中的至少一种：CuNi、CuNiTi、CuW、CuFe和CuMo。
4.根据权利要求1的发光器件，其中该合金在20-250℃的温度范围内的CTE小于10ppm/K。
5.根据权利要求1的发光器件，其中该合金在20-250℃的温度范围内的CTE小于8ppm/K。
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