JP6171043B2 - エピ応力が低減された発光デバイス - Google Patents
エピ応力が低減された発光デバイス Download PDFInfo
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- JP6171043B2 JP6171043B2 JP2016078642A JP2016078642A JP6171043B2 JP 6171043 B2 JP6171043 B2 JP 6171043B2 JP 2016078642 A JP2016078642 A JP 2016078642A JP 2016078642 A JP2016078642 A JP 2016078642A JP 6171043 B2 JP6171043 B2 JP 6171043B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
Claims (7)
- 少なくとも1つの第1のチャネルによって分離された第1のコンタクトを持つサブマウントと、
少なくとも1つの第2のチャネルによって分離された第2のコンタクトを具備する金属層を持つ発光構造体と、
マイクロバンプであり、前記第2のコンタクトの各々が、前記第2のチャネルに隣接する前記第2のコンタクト上の領域に配列された当該マイクロバンプのうちの第1の複数のマイクロバンプと、前記第2のチャネルから離れた領域の前記第2のコンタクト上に配列された当該マイクロバンプのうちの第2の複数のマイクロバンプとによって、対応する第1のコンタクトに結合され、前記第1の複数のマイクロバンプの密度は、前記第2の複数のマイクロバンプの密度よりも大きい、マイクロバンプと、
を有する発光デバイス。 - 前記発光構造体は、フリップチップ構造を有する、請求項1記載の発光デバイス。
- 前記金属層は、合金を有する、請求項1記載の発光デバイス。
- 前記合金は、銅合金を有する、請求項3記載の発光デバイス。
- 前記銅合金は、CuNi、CuNiTi、CuW、CuFe、及び、CuMoのうちの少なくとも1つを有する、請求項4記載の発光デバイス。
- 前記銅合金は、CuNiTiを有する、請求項4記載の発光デバイス。
- 前記第2のチャネル内の充填材、を更に有する請求項1記載の発光デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US39234910P | 2010-10-12 | 2010-10-12 | |
US61/392,349 | 2010-10-12 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013533305A Division JP5919284B2 (ja) | 2010-10-12 | 2011-10-07 | エピ応力が低減された発光デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016165002A JP2016165002A (ja) | 2016-09-08 |
JP6171043B2 true JP6171043B2 (ja) | 2017-07-26 |
Family
ID=44906268
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013533305A Active JP5919284B2 (ja) | 2010-10-12 | 2011-10-07 | エピ応力が低減された発光デバイス |
JP2016078642A Active JP6171043B2 (ja) | 2010-10-12 | 2016-04-11 | エピ応力が低減された発光デバイス |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013533305A Active JP5919284B2 (ja) | 2010-10-12 | 2011-10-07 | エピ応力が低減された発光デバイス |
Country Status (7)
Country | Link |
---|---|
US (2) | US9093630B2 (ja) |
EP (1) | EP2628192B1 (ja) |
JP (2) | JP5919284B2 (ja) |
KR (1) | KR101881178B1 (ja) |
CN (2) | CN103155183B (ja) |
TW (1) | TWI569476B (ja) |
WO (1) | WO2012049602A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101098338B1 (ko) * | 2005-04-22 | 2011-12-26 | 삼성전자주식회사 | 광학 패키지, 광학 렌즈 및 이를 갖는 백라이트 어셈블리및 표시장치 |
CN103155183B (zh) | 2010-10-12 | 2016-10-05 | 皇家飞利浦电子股份有限公司 | 具有减小的外延应力的发光器件 |
TW201320253A (zh) * | 2011-11-01 | 2013-05-16 | Walsin Lihwa Corp | 封裝結構及其製造方法 |
JP2014013818A (ja) * | 2012-07-04 | 2014-01-23 | Sony Corp | デバイスおよび電子装置 |
CN104576907B (zh) * | 2014-12-18 | 2017-10-24 | 上海大学 | 倒装led芯片封装结构 |
US10026872B2 (en) | 2015-06-05 | 2018-07-17 | Sensor Electronic Technology, Inc. | Heterostructure with stress controlling layer |
EP3364465B1 (en) * | 2015-10-15 | 2019-12-18 | LG Innotek Co., Ltd. | Semiconductor device |
CN106653977B (zh) * | 2017-02-24 | 2018-11-13 | 厦门多彩光电子科技有限公司 | 一种倒装芯片封装结构及成型方法 |
CN108630645A (zh) * | 2017-03-17 | 2018-10-09 | 永道无线射频标签(扬州)有限公司 | 一种芯片和天线基材的接合结构及其制备方法 |
JP7189441B2 (ja) * | 2019-04-17 | 2022-12-14 | 日亜化学工業株式会社 | 実装方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6514782B1 (en) * | 1999-12-22 | 2003-02-04 | Lumileds Lighting, U.S., Llc | Method of making a III-nitride light-emitting device with increased light generating capability |
JP3912044B2 (ja) * | 2001-06-06 | 2007-05-09 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子の製造方法 |
JP4029843B2 (ja) * | 2004-01-19 | 2008-01-09 | 豊田合成株式会社 | 発光装置 |
WO2005015647A1 (en) * | 2003-08-08 | 2005-02-17 | Vichel Inc. | Nitride micro light emitting diode with high brightness and method of manufacturing the same |
JP2006066868A (ja) * | 2004-03-23 | 2006-03-09 | Toyoda Gosei Co Ltd | 固体素子および固体素子デバイス |
JP4568092B2 (ja) * | 2004-11-17 | 2010-10-27 | Dowaホールディングス株式会社 | Cu−Ni−Ti系銅合金および放熱板 |
US7125734B2 (en) | 2005-03-09 | 2006-10-24 | Gelcore, Llc | Increased light extraction from a nitride LED |
US7754507B2 (en) | 2005-06-09 | 2010-07-13 | Philips Lumileds Lighting Company, Llc | Method of removing the growth substrate of a semiconductor light emitting device |
US7736945B2 (en) * | 2005-06-09 | 2010-06-15 | Philips Lumileds Lighting Company, Llc | LED assembly having maximum metal support for laser lift-off of growth substrate |
TWI394300B (zh) * | 2007-10-24 | 2013-04-21 | Advanced Optoelectronic Tech | 光電元件之封裝結構及其製造方法 |
US7566913B2 (en) * | 2005-12-02 | 2009-07-28 | Nitronex Corporation | Gallium nitride material devices including conductive regions and methods associated with the same |
WO2007076014A2 (en) * | 2005-12-23 | 2007-07-05 | World Properties, Inc. | Thermal management circuit materials, method of manufacture thereof, and articles formed therefrom |
JP2007267650A (ja) * | 2006-03-30 | 2007-10-18 | Toshiba Corp | 神経毒性を検出するための方法およびキット |
US8062925B2 (en) * | 2006-05-16 | 2011-11-22 | Koninklijke Philips Electronics N.V. | Process for preparing a semiconductor light-emitting device for mounting |
TWI301331B (en) * | 2006-05-17 | 2008-09-21 | Epistar Corp | Light emitting device |
EP2041802B1 (en) * | 2006-06-23 | 2013-11-13 | LG Electronics Inc. | Light emitting diode having vertical topology and method of making the same |
US20080149946A1 (en) * | 2006-12-22 | 2008-06-26 | Philips Lumileds Lighting Company, Llc | Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light |
US7682959B2 (en) * | 2007-03-21 | 2010-03-23 | Stats Chippac, Ltd. | Method of forming solder bump on high topography plated Cu |
CN101855734B (zh) * | 2007-11-15 | 2011-11-02 | 松下电器产业株式会社 | 半导体发光装置 |
JP2009302159A (ja) * | 2008-06-10 | 2009-12-24 | Seiko Epson Corp | 発光ダイオード装置および電子機器 |
JP5361569B2 (ja) * | 2008-06-26 | 2013-12-04 | 京セラ株式会社 | 半導体発光素子及びその製造方法 |
TW201010122A (en) * | 2008-08-21 | 2010-03-01 | Univ Nat Central | Flip-chip light-emitting diode having the epitaxy strengthening layer, and fabrication method thereof |
CN103155183B (zh) | 2010-10-12 | 2016-10-05 | 皇家飞利浦电子股份有限公司 | 具有减小的外延应力的发光器件 |
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2011
- 2011-10-07 CN CN201180049451.9A patent/CN103155183B/zh active Active
- 2011-10-07 JP JP2013533305A patent/JP5919284B2/ja active Active
- 2011-10-07 EP EP11778699.6A patent/EP2628192B1/en active Active
- 2011-10-07 CN CN201610808930.9A patent/CN106159055B/zh active Active
- 2011-10-07 US US13/878,837 patent/US9093630B2/en active Active
- 2011-10-07 KR KR1020137012214A patent/KR101881178B1/ko active IP Right Grant
- 2011-10-07 WO PCT/IB2011/054430 patent/WO2012049602A1/en active Application Filing
- 2011-10-11 TW TW100136797A patent/TWI569476B/zh active
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2015
- 2015-07-14 US US14/798,534 patent/US9660164B2/en active Active
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- 2016-04-11 JP JP2016078642A patent/JP6171043B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2013539922A (ja) | 2013-10-28 |
US20130193476A1 (en) | 2013-08-01 |
CN103155183B (zh) | 2016-10-05 |
CN106159055B (zh) | 2019-04-23 |
KR101881178B1 (ko) | 2018-07-23 |
TWI569476B (zh) | 2017-02-01 |
US9660164B2 (en) | 2017-05-23 |
US20150318459A1 (en) | 2015-11-05 |
EP2628192B1 (en) | 2018-08-08 |
JP5919284B2 (ja) | 2016-05-18 |
CN106159055A (zh) | 2016-11-23 |
US9093630B2 (en) | 2015-07-28 |
WO2012049602A1 (en) | 2012-04-19 |
KR20130118883A (ko) | 2013-10-30 |
CN103155183A (zh) | 2013-06-12 |
EP2628192A1 (en) | 2013-08-21 |
TW201222881A (en) | 2012-06-01 |
JP2016165002A (ja) | 2016-09-08 |
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