JP2010514207A - 視準リフレクタを有するナノ構造のledアレイ - Google Patents
視準リフレクタを有するナノ構造のledアレイ Download PDFInfo
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- JP2010514207A JP2010514207A JP2009542712A JP2009542712A JP2010514207A JP 2010514207 A JP2010514207 A JP 2010514207A JP 2009542712 A JP2009542712 A JP 2009542712A JP 2009542712 A JP2009542712 A JP 2009542712A JP 2010514207 A JP2010514207 A JP 2010514207A
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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Abstract
Description
この技術では、LEDデバイスを構成するためにナノ構造を用いることができることが示されてきた。ナノ技術により提供される可能性を完全に利用するために、効率に関する更なる改善が必要である。
本発明に係るナノ構造の発光ダイオード、即ちLEDのデバイスは、直立したナノ構造のLEDを含む。個々のナノ構造のLEDは、例えば、ナノワイヤを使用することにより形成される。ナノワイヤは、LEDにおける活性素子として、またはナノ構造の必須素材として用いられ、ナノワイヤを用いることで、例えば、基板の素材には適さない素材を用いて、ナノ構造を製造することができる。半導体基板上にナノワイヤを成長させるのに適した方法は、米国特許公開第2003010244号に記載されている。ヘテロ構造を有する、エピタキシャル成長させたナノワイヤを提供する方法は、米国特許公開第20040075464号に開示されている。ナノ構造のLEDは、他の方法、例えば、D.Kapolnekら著の"SpatialcontrolofInGaNluminescencebyMOCVDselectiveepitaxy"、CrystalGrowth189/190(1998)83-86に示されているように、GaN基板上のInGaN/GaN六角錐構造として形成しても良い。
図1aに、本発明にかかるナノ構造のLEDデバイス101を概略的に示すが、それぞれが光を生成する個々の活性領域120を有する、ナノ構造のLED100の少なくとも1つのアレイを含む。ナノ構造のLEDは、製造中に基板105から成長する。本発明にかかるナノ構造のLEDデバイス101は一般的に「フリップフロップ」構造と呼ばれるものであるように設計され、基板105を通して光が抽出される。別の例では、基板が製造中に取り除かれ、ナノ構造LED100から直接、または、バッファ層またはナノ構造のLED100の下面を覆う保護層(不図示)を介して、光が放射される。本発明によれば、生成された光は、少なくともその一部がナノ構造のLEDと比べて、光がデバイスを離れる、つまり、最上端に近い、ナノ構造のLEDの端の反対側の端に近い位置にあるリフレクタ135により向けられる。リフレクタ135は、活性領域からの光を基板の方向に、照準または焦点を合わせる。ナノ構造のLEDアレイ及び基板平面の法線方向に向けられた光を照準合わせることで、内部反射が減るため、デバイスの光抽出に有利である。高度に方向を定められた発光は、いくつかのLEDの応用に有利である。リフレクタ135が活性領域120に面した基本的な凹面を有するため、光の照準を合わせることができる。ここで、凹面は、図2に示すように、これらに限定されるものではないが、連続曲面(a)、開いた矩形(openrectangle)(b)、角が丸い開いた矩形(c)、複数の直線パーツを角度を変えてつなげたもの(d)、三角形の2本の足(e)、または複数の連続曲線(f)を形成する断面を含む、非常に広い解釈をされるべきである。照準合わせも広く解釈されるべきであり、LEDデバイスを離れる光が、厳密に水平でなくてもよいが、一般的に好ましい方向に向いていることを含む。
b)決められた成長位置で、基板からナノ構造のLEDを成長させる;
c)ナノ構造のLEDの少なくとも最上部にリフレクタ素材を堆積させることで、各ナノ構造のLEDに独立したリフレクタを形成する;
という基本的ステップを備える。
方法の詳細は、ナノ構造のLEDデバイスの素材、所望の形状、及び機能によって変わる。製造例を以下に示す。
1.リソグラフィにより、p+型GaP基板1305上に、部分的な触媒の範囲を限定。
2.ナノワイヤ1310を、部分的な触媒1331から成長させる。成長パラメータは、触媒ワイヤ成長に応じて調整する。
3.ナノワイヤの周りに薄膜InGaP濃縮層1312を半径方向に成長させる(被膜層)。
4.SiO2をマスク素材1332として堆積させる。
5.ナノワイヤの上部を開けるために、マスク1332をバックエッチングする。
6.n+型InGaPの体積要素1315を選択的に成長させる。成長パラメータは半径方向に成長するように調整される。
7.体積要素615の少なくとも一部に、反射素材を堆積することで体積要素の上にリフレクタを形成する。
Claims (26)
- ナノ構造のLEDデバイス(101)であって、それぞれが発光のための活性領域(120)を有する、複数の独立したナノ構造のLED(100)のアレイと、それぞれが1つの独立したナノ構造のLED(100)またはナノ構造のLEDのグループに結合された複数のリフレクタとを有し、各リフレクタ(135)は、前記独立したナノ構造のLEDそれぞれの活性領域、または前記ナノ構造のLEDのグループの活性領域に面した凹面を有することを特徴とするナノ構造のLEDデバイス。
- 前記各リフレクタ(135)は、前記ナノ構造のLEDを上から見た場合に、該ナノ構造のLED(100)それぞれの中心の上に位置していることを特徴とする請求項1に記載のナノ構造のLEDデバイス(101)。
- 前記各リフレクタ(135)は、前記ナノ構造のLEDのグループの上面をまとめて覆うことを特徴とする請求項1に記載のナノ構造のLEDデバイス(101)。
- 前記リフレクタ(135)それぞれは、前記ナノ構造のLED(100)それぞれの上面を覆うことを特徴とする請求項2に記載のナノ構造のLEDデバイス(101)。
- 前記各リフレクタ(135)の凹面は、前記ナノ構造のLED(100)それぞれの上面の形状により決められることを特徴とする請求項4に記載のナノ構造のLEDデバイス(101)。
- 前記ナノ構造のLED(100)は、尖った上部と、垂直な側面を有する長く延びた構造を有し、前記リフレクタ(135)それぞれは、少なくとも前記尖った上部を覆うことを特徴とする請求項5に記載のナノ構造のLEDデバイス(101)。
- 前記リフレクタ(135)それぞれは、前記垂直な側面の一部を覆うことを特徴とする請求項6に記載のナノ構造のLEDデバイス(101)。
- 前記ナノ構造のLED(100)は、角錐構造であることを特徴とする請求項5に記載のナノ構造のLEDデバイス(101)。
- 前記リフレクタ(135)は、また、前記ナノ構造のLEDの上部コンタクトであることを特徴とする請求項1乃至8のいずれか1項に記載のナノ構造のLEDデバイス(101)。
- 前記ナノ構造のLEDのアレイは、前記アレイの平面内方向に近い角度方向へ放射された波長の光を防ぐように構成された光子結晶を形成することを特徴とする請求項1乃至9のいずれか1項に記載のナノ構造のLEDデバイス(101)。
- 前記リフレクタ(135)は、連結して、前記複数のナノ構造のLED(100)を覆う連続反射層(535)を形成することを特徴とする請求項1乃至10のいずれか1項に記載のナノ構造のLEDデバイス(101)。
- 充填層(507)は、前記ナノ構造のLEDの一部を覆い、前記連続反射層(535)は、少なくとも、前記ナノ構造のLEDの上面と、前記ナノ構造のLED間の前記充填層を覆うことを特徴とする請求項11に記載のナノ構造のLEDデバイス(101)。
- 前記ナノ構造のLED(100)は、放射された光の少なくとも一部を、前記各リフレクタ(135)に向ける導波管であることを特徴とする請求項1乃至12のいずれか1項に記載のナノ構造のLEDデバイス(101)。
- 前記複数のナノ構造のLEDは、LEDアレイ層であって、前記LEDアレイ層に構成された、対応する複数の活性領域(120)を有する前記LEDアレイ層と、前記LEDアレイ層(180)と平行な平面に構成されたリフレクタ層(180)とを有し、前記リフレクタ層は、それぞれが、1つの活性領域(120)または活性領域(120)のグループに面した凹面を有し、前記LEDアレイ(180)を介して光の向きを決めるように構成された、複数のリフレクタ(135)を含むことを特徴とする請求項1に記載のナノ構造のLEDデバイス(101)。
- 前記ナノ構造のLED及び前記リフレクタは周期的に繰り替えされており、前記リフレクタ層(181)の前記リフレクタ(135)の周期性は、前記LEDアレイ層(180)における前記独立したナノ構造のLEDの周期性に関連していることを特徴とする請求項14に記載のナノ構造のLEDデバイス(101)。
- 前記各リフレクタ(135)は、前記ナノ構造のLEDを上から見た場合に、該ナノ構造のLED(100)それぞれの中心の上に位置していることを特徴とする請求項14に記載のナノ構造のLEDデバイス(101)。
- 前記リフレクタ層(181)の前記リフレクタ(135)の周期性は、前記LEDアレイ層(180)の前記独立したナノ構造のLEDの周期性に、nまたは1/n, n=l, 2, 3の級数として関連していることを特徴とする請求項15に記載のナノ構造のLEDデバイス(101)。
- 前記ナノ構造のLED及び前記リフレクタは周期的に繰り替えされており、前記リフレクタ層(181)の前記リフレクタ(135)の周期性は、前記LEDアレイ層(180)における前記独立したナノ構造のLEDの周期性との相互関連が無いことを特徴とする請求項14に記載のナノ構造のLEDデバイス(101)。
- 前記各リフレクタ(135)は、前記ナノ構造のLED(100)それぞれの上面を覆うことを特徴とする請求項14乃至18のいずれか1項に記載のナノ構造のLEDデバイス(101)。
- 前記リフレクタ(135)は、連結して、前記複数のナノ構造のLED(100)を覆う連続反射層(535)形成することを特徴とする請求項14乃至19のいずれか1項に記載のナノ構造のLEDデバイス(101)。
- 充填層(507)は、前記ナノ構造のLEDの一部を覆い、前記連続反射層(535)は、少なくとも、前記ナノ構造のLEDの上面と、前記ナノ構造のLED間の前記充填層を覆うことを特徴とする請求項20に記載のナノ構造のLEDデバイス(101)。
- 前記ナノ構造のLEDのアレイは、前記LEDアレイ層(180)に光子結晶を形成し、前記光子結晶は、前記アレイの平面内方向に近い角度の方向への放射された波長の光を防ぐように構成されていることを特徴とする請求項14乃至21のいずれか1項に記載のナノ構造のLEDデバイス(101)。
- 複数のナノ構造のLEDを含むナノ構造のLEDデバイスを製造する方法であって、
(a)リソグラフィにより、基板上の成長位置を決める;
(b)前記決められた成長位置で、前記基板からナノ構造のLEDを成長させる;
(c)前記ナノ構造のLEDの少なくとも最上部にリフレクタ素材を堆積させることで、前記各ナノ構造のLEDに独立したリフレクタを形成する;
ステップを含むことを特徴とする。 - 前記ナノ構造のLEDの成長ステップの後、前記リフレクタ素材の堆積ステップの前に行われる、前記ナノ構造のLEDを覆う前記リフレクタの内側の表面の形状を決めるために、前記ナノ構造のLEDの上部分を形成するステップを更に有することを特徴とする請求項23に記載のナノ構造のLEDを製造する方法。
- 前記ナノ構造のLEDの上部分を形成する前記ステップは、予め決められた形状を提供するために、前記ナノ構造のLEDの上部から素材を取り除くステップを含むことを特徴とする請求項24に記載のナノ構造のLEDを製造する方法。
- 前記リフレクタの内側の表面を決めるための予め決められた形状を形成するために、前記ナノ構造のLEDの上部を形成するステップは、透明な素材を前記ナノ構造のLEDの少なくとも最上部に追加するステップを含むことを特徴とする請求項24に記載のナノ構造のLEDを製造する方法。
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Cited By (16)
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SE533531C2 (sv) * | 2008-12-19 | 2010-10-19 | Glo Ab | Nanostrukturerad anordning |
KR101061150B1 (ko) * | 2009-05-22 | 2011-08-31 | 서울대학교산학협력단 | 발광 디바이스와 이의 제조 방법 |
WO2011067872A1 (ja) | 2009-12-01 | 2011-06-09 | 国立大学法人北海道大学 | 発光素子およびその製造方法 |
JP5066164B2 (ja) * | 2009-12-07 | 2012-11-07 | シャープ株式会社 | 半導体素子の製造方法 |
US9305766B2 (en) | 2009-12-22 | 2016-04-05 | Qunano Ab | Method for manufacturing a nanowire structure |
JP5464458B2 (ja) | 2010-02-25 | 2014-04-09 | 国立大学法人北海道大学 | 半導体装置及び半導体装置の製造方法 |
KR101130224B1 (ko) * | 2010-04-14 | 2012-03-26 | 고려대학교 산학협력단 | 나노 막대를 이용한 발광 소자 및 그 제조 방법 |
DE102010026344A1 (de) * | 2010-07-07 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Leuchtdiode |
FR2964796B1 (fr) * | 2010-09-14 | 2014-03-21 | Commissariat Energie Atomique | Dispositif optoelectronique a base de nanofils pour l'emission de lumiere |
FR2975532B1 (fr) * | 2011-05-18 | 2013-05-10 | Commissariat Energie Atomique | Connexion electrique en serie de nanofils emetteurs de lumiere |
FR2973936B1 (fr) * | 2011-04-05 | 2014-01-31 | Commissariat Energie Atomique | Procede de croissance selective sur une structure semiconductrice |
FR2976123B1 (fr) * | 2011-06-01 | 2013-07-05 | Commissariat Energie Atomique | Structure semiconductrice destinee a emettre de la lumiere et procede de fabrication d'une telle structure |
US8723205B2 (en) | 2011-08-30 | 2014-05-13 | Abl Ip Holding Llc | Phosphor incorporated in a thermal conductivity and phase transition heat transfer mechanism |
US8710526B2 (en) | 2011-08-30 | 2014-04-29 | Abl Ip Holding Llc | Thermal conductivity and phase transition heat transfer mechanism including optical element to be cooled by heat transfer of the mechanism |
US8759843B2 (en) | 2011-08-30 | 2014-06-24 | Abl Ip Holding Llc | Optical/electrical transducer using semiconductor nanowire wicking structure in a thermal conductivity and phase transition heat transfer mechanism |
US9035278B2 (en) | 2011-09-26 | 2015-05-19 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
US8350249B1 (en) * | 2011-09-26 | 2013-01-08 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
US8349116B1 (en) | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
US8573469B2 (en) | 2011-11-18 | 2013-11-05 | LuxVue Technology Corporation | Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer |
US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
US8426227B1 (en) * | 2011-11-18 | 2013-04-23 | LuxVue Technology Corporation | Method of forming a micro light emitting diode array |
DE102012101718A1 (de) * | 2012-03-01 | 2013-09-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
KR101901320B1 (ko) * | 2012-05-22 | 2018-09-21 | 삼성전자주식회사 | 발광소자 및 그 제조방법 |
US20130313514A1 (en) * | 2012-05-23 | 2013-11-28 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
KR102060392B1 (ko) | 2012-09-18 | 2020-02-11 | 글로 에이비 | 나노피라미드 크기의 광전자 구조 및 이를 제조하는 방법 |
FR2997557B1 (fr) * | 2012-10-26 | 2016-01-01 | Commissariat Energie Atomique | Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif |
WO2014066379A1 (en) * | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
JP6322197B2 (ja) * | 2012-10-26 | 2018-05-09 | グロ アーベーGlo Ab | ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。 |
FR2997420B1 (fr) | 2012-10-26 | 2017-02-24 | Commissariat Energie Atomique | Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes |
KR101898680B1 (ko) * | 2012-11-05 | 2018-09-13 | 삼성전자주식회사 | 나노구조 발광 소자 |
FR3000294B1 (fr) * | 2012-12-21 | 2016-03-04 | Aledia | Support fonctionnel comprenant des nanofils et des nano-empreintes et procede de fabrication dudit support |
KR101916274B1 (ko) | 2013-01-24 | 2018-11-07 | 삼성전자주식회사 | 반도체 발광소자 및 그 제조방법 |
US9082926B2 (en) | 2013-06-18 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor optical emitting device with metallized sidewalls |
US9574135B2 (en) * | 2013-08-22 | 2017-02-21 | Nanoco Technologies Ltd. | Gas phase enhancement of emission color quality in solid state LEDs |
WO2015095049A1 (en) * | 2013-12-17 | 2015-06-25 | Glo Ab | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
FR3015772B1 (fr) * | 2013-12-19 | 2017-10-13 | Aledia | Dispositif optoelectronique a diodes electroluminescentes a extraction de lumiere amelioree |
US9431523B2 (en) * | 2014-01-16 | 2016-08-30 | Globalfoundries Inc. | Local thinning of semiconductor fins |
KR102285786B1 (ko) * | 2014-01-20 | 2021-08-04 | 삼성전자 주식회사 | 반도체 발광 소자 |
KR102203460B1 (ko) * | 2014-07-11 | 2021-01-18 | 삼성전자주식회사 | 나노구조 반도체 발광소자의 제조방법 |
KR102188494B1 (ko) * | 2014-07-21 | 2020-12-09 | 삼성전자주식회사 | 반도체 발광소자, 반도체 발광소자 제조방법 및 반도체 발광소자 패키지 제조방법 |
US10483319B2 (en) | 2014-08-08 | 2019-11-19 | Glo Ab | Pixilated display device based upon nanowire LEDs and method for making the same |
JP6505208B2 (ja) | 2014-08-12 | 2019-04-24 | グロ アーベーGlo Ab | ひずみ改質された表面活性領域を有するiii族窒化物ナノワイヤledおよびその製造方法 |
KR102164796B1 (ko) * | 2014-08-28 | 2020-10-14 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
US9620559B2 (en) * | 2014-09-26 | 2017-04-11 | Glo Ab | Monolithic image chip for near-to-eye display |
KR102212557B1 (ko) | 2014-11-03 | 2021-02-08 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
FR3028671B1 (fr) * | 2014-11-19 | 2018-03-09 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode electroluminescente a puits quantiques dopes et procede de fabrication associe |
DE102015104144A1 (de) * | 2015-03-19 | 2016-09-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers |
CN105405745B (zh) * | 2015-11-10 | 2018-06-22 | 中国科学院半导体研究所 | 立式iii-v族锑化物半导体单晶薄膜的制备方法 |
FR3044470B1 (fr) * | 2015-11-30 | 2018-03-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique comportant des structures semiconductrices tridimensionnelles en configuration axiale |
FR3053435B1 (fr) * | 2016-07-01 | 2020-07-17 | Valeo Vision | Dispositif d’eclairage et/ou de signalisation pour vehicule automobile |
US10480719B2 (en) * | 2016-08-16 | 2019-11-19 | King Abdullah University Of Science And Technology | Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications |
FR3059828B1 (fr) | 2016-12-02 | 2019-05-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a diode electroluminescente a extraction augmentee |
FR3059788B1 (fr) | 2016-12-02 | 2019-01-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a diode electroluminescente a extraction augmentee |
FR3061607B1 (fr) * | 2016-12-29 | 2019-05-31 | Aledia | Dispositif optoelectronique a diodes electroluminescentes |
EP3588704B1 (en) * | 2017-02-27 | 2022-07-13 | Kyoto University | Surface-emitting laser and method for manufacturing surface-emitting laser |
US10418499B2 (en) | 2017-06-01 | 2019-09-17 | Glo Ab | Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof |
CN108987423B (zh) * | 2017-06-05 | 2023-09-12 | 三星电子株式会社 | 显示装置 |
US10707374B2 (en) | 2017-09-15 | 2020-07-07 | Glo Ab | Etendue enhancement for light emitting diode subpixels |
KR102491854B1 (ko) * | 2017-09-29 | 2023-01-26 | 삼성전자주식회사 | 분광기 |
JP6978902B2 (ja) * | 2017-11-10 | 2021-12-08 | 富士通株式会社 | 化合物半導体装置、受信機、及び化合物半導体装置の製造方法。 |
WO2019199946A1 (en) * | 2018-04-11 | 2019-10-17 | Glo Ab | Light emitting diodes formed on nanodisk substrates and methods of making the same |
CN110534640A (zh) * | 2018-05-24 | 2019-12-03 | 中国科学院深圳先进技术研究院 | 一种异质结直流压电纳米发电机及其制备方法 |
FR3082657B1 (fr) * | 2018-06-19 | 2021-01-29 | Aledia | Procede de fabrication d’un dispositif optoelectronique a parois de confinement lumineux auto alignes |
US10868213B2 (en) * | 2018-06-26 | 2020-12-15 | Lumileds Llc | LED utilizing internal color conversion with light extraction enhancements |
CN109449267B (zh) * | 2018-10-30 | 2020-05-08 | 广东工业大学 | 一种紫外发光二极管及其制作方法 |
CN109616553B (zh) * | 2018-11-22 | 2020-06-30 | 中南大学 | 一种新型纤锌矿GaAs核壳纳米线光电探测器的制备方法 |
KR102632623B1 (ko) * | 2018-12-20 | 2024-01-31 | 엘지디스플레이 주식회사 | 광 경로 제어 부재 및 이를 포함하는 전자 기기 |
US11637219B2 (en) | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
US11942571B2 (en) * | 2019-04-22 | 2024-03-26 | Lumileds Llc | LED with active region disposed within an optical cavity defined by an embedded nanostructured layer and a reflector |
US11458447B2 (en) | 2019-07-22 | 2022-10-04 | Analytical Sales and Services, Inc. | Apparatus for facilitating photochemical reactions |
US11695100B2 (en) | 2020-01-21 | 2023-07-04 | Nanosys, Inc. | Light emitting diode containing a grating and methods of making the same |
US11211452B1 (en) | 2020-06-30 | 2021-12-28 | International Business Machines Corporation | Transistor having stacked source/drain regions with formation assistance regions and multi-region wrap-around source/drain contacts |
JP7176700B2 (ja) * | 2020-07-31 | 2022-11-22 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
US11094846B1 (en) | 2020-08-31 | 2021-08-17 | 4233999 Canada Inc. | Monolithic nanocolumn structures |
US11799054B1 (en) | 2023-02-08 | 2023-10-24 | 4233999 Canada Inc. | Monochromatic emitters on coalesced selective area growth nanocolumns |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003282942A (ja) * | 2001-08-22 | 2003-10-03 | Sony Corp | 窒化物半導体素子及び窒化物半導体素子の製造方法 |
JP2004532133A (ja) * | 2001-03-30 | 2004-10-21 | ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア | ナノ構造及びナノワイヤーの組立方法並びにそれらから組立てられた装置 |
JP2006332650A (ja) * | 2005-05-24 | 2006-12-07 | Lg Electronics Inc | ロッド型発光素子及びその製造方法 |
Family Cites Families (97)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4287427A (en) * | 1977-10-17 | 1981-09-01 | Scifres Donald R | Liquid-level monitor |
FR2658839B1 (fr) | 1990-02-23 | 1997-06-20 | Thomson Csf | Procede de croissance controlee de cristaux aciculaires et application a la realisation de microcathodes a pointes. |
US5362972A (en) * | 1990-04-20 | 1994-11-08 | Hitachi, Ltd. | Semiconductor device using whiskers |
US5332910A (en) * | 1991-03-22 | 1994-07-26 | Hitachi, Ltd. | Semiconductor optical device with nanowhiskers |
US5196396A (en) * | 1991-07-16 | 1993-03-23 | The President And Fellows Of Harvard College | Method of making a superconducting fullerene composition by reacting a fullerene with an alloy containing alkali metal |
JP3243303B2 (ja) * | 1991-10-28 | 2002-01-07 | ゼロックス・コーポレーション | 量子閉じ込め半導体発光素子及びその製造方法 |
JP2697474B2 (ja) * | 1992-04-30 | 1998-01-14 | 松下電器産業株式会社 | 微細構造の製造方法 |
JP2821061B2 (ja) * | 1992-05-22 | 1998-11-05 | 電気化学工業株式会社 | 単結晶の製造方法 |
US5252835A (en) * | 1992-07-17 | 1993-10-12 | President And Trustees Of Harvard College | Machining oxide thin-films with an atomic force microscope: pattern and object formation on the nanometer scale |
WO1995002709A2 (en) | 1993-07-15 | 1995-01-26 | President And Fellows Of Harvard College | EXTENDED NITRIDE MATERIAL COMPRISING β-C3N¿4? |
JP3537881B2 (ja) * | 1994-03-29 | 2004-06-14 | 株式会社リコー | Ledアレイヘッド |
US6190634B1 (en) * | 1995-06-07 | 2001-02-20 | President And Fellows Of Harvard College | Carbide nanomaterials |
US6307241B1 (en) * | 1995-06-07 | 2001-10-23 | The Regents Of The Unversity Of California | Integrable ferromagnets for high density storage |
US5897945A (en) * | 1996-02-26 | 1999-04-27 | President And Fellows Of Harvard College | Metal oxide nanorods |
US6036774A (en) | 1996-02-26 | 2000-03-14 | President And Fellows Of Harvard College | Method of producing metal oxide nanorods |
JPH10106960A (ja) * | 1996-09-25 | 1998-04-24 | Sony Corp | 量子細線の製造方法 |
US5976957A (en) * | 1996-10-28 | 1999-11-02 | Sony Corporation | Method of making silicon quantum wires on a substrate |
US5997832A (en) * | 1997-03-07 | 1999-12-07 | President And Fellows Of Harvard College | Preparation of carbide nanorods |
KR100223807B1 (ko) * | 1997-06-04 | 1999-10-15 | 구본준 | 반도체 소자의 제조방법 |
CA2311132C (en) * | 1997-10-30 | 2004-12-07 | Sumitomo Electric Industries, Ltd. | Gan single crystalline substrate and method of producing the same |
JPH11251685A (ja) * | 1998-03-05 | 1999-09-17 | Toshiba Corp | 半導体レーザ |
US6159742A (en) * | 1998-06-05 | 2000-12-12 | President And Fellows Of Harvard College | Nanometer-scale microscopy probes |
JP4362874B2 (ja) | 1998-08-24 | 2009-11-11 | ソニー株式会社 | 量子構造体を有する半導体素子とその製造方法 |
US6239434B1 (en) * | 1999-02-08 | 2001-05-29 | General Electric Company | Solid state optical spectrometer for combustion flame temperature measurement |
US6559468B1 (en) * | 1999-03-29 | 2003-05-06 | Hewlett-Packard Development Company Lp | Molecular wire transistor (MWT) |
WO2001003208A1 (en) | 1999-07-02 | 2001-01-11 | President And Fellows Of Harvard College | Nanoscopic wire-based devices, arrays, and methods of their manufacture |
EP1116418B2 (de) * | 1999-07-23 | 2011-07-06 | OSRAM Gesellschaft mit beschränkter Haftung | Leuchstoff für lichtquellen und zugehörige lichtquelle |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
US6596377B1 (en) * | 2000-03-27 | 2003-07-22 | Science & Technology Corporation @ Unm | Thin film product and method of forming |
GB0008546D0 (en) | 2000-04-06 | 2000-05-24 | Btg Int Ltd | Optoelectronic devices |
CA2406006C (en) * | 2000-05-04 | 2011-02-15 | Btg International Limited | Particle deposition apparatus and method for forming nanostructures |
WO2002001648A1 (en) | 2000-06-28 | 2002-01-03 | Motorola, Inc. | Semiconductor structure, device, circuit, and process |
US7301199B2 (en) | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
EP2298968A3 (en) | 2000-08-22 | 2011-10-05 | President and Fellows of Harvard College | Method for growing nanowires |
JP4672839B2 (ja) * | 2000-09-06 | 2011-04-20 | キヤノン株式会社 | 発光体、構造体及びその製造方法 |
AU2001294585A1 (en) * | 2000-09-18 | 2002-03-26 | President And Fellows Of Harvard College | Fabrication of nanotube microscopy tips |
US6552368B2 (en) * | 2000-09-29 | 2003-04-22 | Omron Corporation | Light emission device |
WO2002026624A1 (en) * | 2000-09-29 | 2002-04-04 | President And Fellows Of Harvard College | Direct growth of nanotubes, and their use in nanotweezers |
JP4583710B2 (ja) | 2000-12-11 | 2010-11-17 | プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ | ナノセンサ |
EP1221722A1 (en) * | 2001-01-06 | 2002-07-10 | Interuniversitair Microelektronica Centrum Vzw | Highly efficient paraboloid light emitting diode |
JP2002220300A (ja) * | 2001-01-18 | 2002-08-09 | Vision Arts Kk | ナノファイバーおよびナノファイバーの作製方法 |
JP2004535066A (ja) | 2001-05-18 | 2004-11-18 | プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ | ナノスケールワイヤ及び関連デバイス |
US20020176473A1 (en) * | 2001-05-23 | 2002-11-28 | Aram Mooradian | Wavelength selectable, controlled chirp, semiconductor laser |
US6709929B2 (en) * | 2001-06-25 | 2004-03-23 | North Carolina State University | Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates |
AU2002364928C1 (en) | 2001-07-20 | 2008-09-11 | President And Fellows Of Harvard College | Transition metal oxide nanowires, and devices incorporating them |
US6586965B2 (en) * | 2001-10-29 | 2003-07-01 | Hewlett Packard Development Company Lp | Molecular crossbar latch |
US6455340B1 (en) * | 2001-12-21 | 2002-09-24 | Xerox Corporation | Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff |
US6882767B2 (en) * | 2001-12-27 | 2005-04-19 | The Regents Of The University Of California | Nanowire optoelectric switching device and method |
EP1468423A2 (en) | 2002-01-18 | 2004-10-20 | California Institute Of Technology | Array-based architecture for molecular electronics |
TWI220319B (en) | 2002-03-11 | 2004-08-11 | Solidlite Corp | Nano-wire light emitting device |
US7335908B2 (en) * | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
AU2003261205A1 (en) * | 2002-07-19 | 2004-02-09 | President And Fellows Of Harvard College | Nanoscale coherent optical components |
US7211143B2 (en) * | 2002-12-09 | 2007-05-01 | The Regents Of The University Of California | Sacrificial template method of fabricating a nanotube |
US7355216B2 (en) * | 2002-12-09 | 2008-04-08 | The Regents Of The University Of California | Fluidic nanotubes and devices |
JP4428921B2 (ja) * | 2002-12-13 | 2010-03-10 | キヤノン株式会社 | ナノ構造体、電子デバイス、及びその製造方法 |
JP2004288799A (ja) * | 2003-03-20 | 2004-10-14 | Sony Corp | 半導体発光素子およびその製造方法、集積型半導体発光装置およびその製造方法、画像表示装置およびその製造方法ならびに照明装置およびその製造方法 |
JP3580311B1 (ja) * | 2003-03-28 | 2004-10-20 | 住友電気工業株式会社 | 表裏識別した矩形窒化物半導体基板 |
EP1613549B1 (en) * | 2003-04-04 | 2013-08-07 | QuNano AB | Precisely positioned nanowhisker structures and method for preparing them |
KR101064318B1 (ko) * | 2003-04-04 | 2011-09-14 | 큐나노에이비 | Pn 접합을 갖는 나노위스커 및 이의 가공 방법 |
US20040252737A1 (en) * | 2003-06-16 | 2004-12-16 | Gyu Chul Yi | Zinc oxide based nanorod with quantum well or coaxial quantum structure |
KR100593264B1 (ko) * | 2003-06-26 | 2006-06-26 | 학교법인 포항공과대학교 | p-타입 반도체 박막과 n-타입 산화아연(ZnO)계나노막대의 이종접합 구조체, 이의 제법 및 이를 이용한소자 |
EP1642300A2 (en) * | 2003-07-08 | 2006-04-05 | Qunamo AB | Probe structures incorporating nanowhiskers, production methods thereof, and methods of forming nanowhiskers |
US7445742B2 (en) * | 2003-08-15 | 2008-11-04 | Hewlett-Packard Development Company, L.P. | Imprinting nanoscale patterns for catalysis and fuel cells |
US7122827B2 (en) * | 2003-10-15 | 2006-10-17 | General Electric Company | Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same |
US7662706B2 (en) * | 2003-11-26 | 2010-02-16 | Qunano Ab | Nanostructures formed of branched nanowhiskers and methods of producing the same |
US7354850B2 (en) * | 2004-02-06 | 2008-04-08 | Qunano Ab | Directionally controlled growth of nanowhiskers |
KR20050082487A (ko) * | 2004-02-19 | 2005-08-24 | 삼성전자주식회사 | 면광원 장치 및 이를 갖는 표시장치 |
KR100646696B1 (ko) * | 2004-03-10 | 2006-11-23 | 주식회사 실트론 | 질화물 반도체 소자 및 그 제조방법 |
KR100601949B1 (ko) | 2004-04-07 | 2006-07-14 | 삼성전자주식회사 | 나노와이어 발광소자 |
KR100552707B1 (ko) | 2004-04-07 | 2006-02-20 | 삼성전자주식회사 | 나노와이어 발광소자 및 그 제조방법 |
TWM258416U (en) * | 2004-06-04 | 2005-03-01 | Lite On Technology Corp | Power LED package module |
WO2006000790A1 (en) * | 2004-06-25 | 2006-01-05 | Btg International Limited | Formation of nanowhiskers on a substrate of dissimilar material |
WO2006110163A2 (en) * | 2004-08-20 | 2006-10-19 | Yale University | Epitaxial growth of aligned algainn nanowires by metal-organic chemical vapor deposition |
TWI500072B (zh) * | 2004-08-31 | 2015-09-11 | Sophia School Corp | 發光元件之製造方法 |
US7345296B2 (en) * | 2004-09-16 | 2008-03-18 | Atomate Corporation | Nanotube transistor and rectifying devices |
CA2580357C (en) | 2004-09-30 | 2014-01-28 | Covalon Technologies Inc. | Non-adhesive elastic gelatin matrices |
US7303631B2 (en) * | 2004-10-29 | 2007-12-04 | Sharp Laboratories Of America, Inc. | Selective growth of ZnO nanostructure using a patterned ALD ZnO seed layer |
WO2006060599A2 (en) * | 2004-12-02 | 2006-06-08 | The Regents Of The University Of California | Semiconductor devices based on coalesced nano-rod arrays |
US7309621B2 (en) * | 2005-04-26 | 2007-12-18 | Sharp Laboratories Of America, Inc. | Method to fabricate a nanowire CHEMFET sensor device using selective nanowire deposition |
KR100658938B1 (ko) | 2005-05-24 | 2006-12-15 | 엘지전자 주식회사 | 나노 로드를 갖는 발광 소자 및 그의 제조 방법 |
KR100691179B1 (ko) * | 2005-06-01 | 2007-03-09 | 삼성전기주식회사 | 측면 발광형 엘이디 패키지 및 그 제조 방법 |
WO2006130359A2 (en) * | 2005-06-02 | 2006-12-07 | Nanosys, Inc. | Light emitting nanowires for macroelectronics |
US7492803B2 (en) * | 2005-06-10 | 2009-02-17 | Hewlett-Packard Development Company, L.P. | Fiber-coupled single photon source |
US8344361B2 (en) | 2005-06-16 | 2013-01-01 | Qunano Ab | Semiconductor nanowire vertical device architecture |
US8163575B2 (en) * | 2005-06-17 | 2012-04-24 | Philips Lumileds Lighting Company Llc | Grown photonic crystals in semiconductor light emitting devices |
US20070257264A1 (en) * | 2005-11-10 | 2007-11-08 | Hersee Stephen D | CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS |
EP1791186A1 (en) * | 2005-11-25 | 2007-05-30 | Stormled AB | Light emitting diode and method for manufacturing the same |
US7349613B2 (en) * | 2006-01-24 | 2008-03-25 | Hewlett-Packard Development Company, L.P. | Photonic crystal devices including gain material and methods for using the same |
US7826336B2 (en) * | 2006-02-23 | 2010-11-02 | Qunano Ab | Data storage nanostructures |
JP5483887B2 (ja) | 2006-03-08 | 2014-05-07 | クナノ アーベー | Si上のエピタキシャルな半導体ナノワイヤの金属無しでの合成方法 |
JP5592610B2 (ja) * | 2006-03-10 | 2014-09-17 | エステイーシー.ユーエヌエム | ナノワイヤーの製造方法、III族窒化物ナノワイヤーアレイ、及びGaN基板構造 |
DE102006013245A1 (de) * | 2006-03-22 | 2007-10-04 | Infineon Technologies Ag | Verfahren zur Ausbildung von Öffnungen in einer Matrizenschicht und zur Herstellung von Kondensatoren |
US7863634B2 (en) * | 2006-06-12 | 2011-01-04 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and reflector |
JP5453105B2 (ja) | 2006-12-22 | 2014-03-26 | クナノ アーベー | ナノ構造のled及びデバイス |
US20080149946A1 (en) * | 2006-12-22 | 2008-06-26 | Philips Lumileds Lighting Company, Llc | Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light |
US8049203B2 (en) | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
EP2091862B1 (en) | 2006-12-22 | 2019-12-11 | QuNano AB | Elevated led and method of producing such |
-
2007
- 2007-12-22 JP JP2009542711A patent/JP5453105B2/ja active Active
- 2007-12-22 CN CN2011102356962A patent/CN102255018B/zh not_active Expired - Fee Related
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- 2007-12-22 KR KR1020097012816A patent/KR20090096704A/ko active IP Right Grant
- 2007-12-22 CN CN2007800517340A patent/CN101669219B/zh not_active Expired - Fee Related
- 2007-12-22 EP EP07861099.5A patent/EP2126986B1/en active Active
- 2007-12-27 US US12/451,911 patent/US20100283064A1/en not_active Abandoned
- 2007-12-27 JP JP2009542712A patent/JP5145353B2/ja active Active
- 2007-12-27 EP EP07861102.7A patent/EP2095425B1/en active Active
- 2007-12-27 WO PCT/SE2007/001174 patent/WO2008079079A1/en active Application Filing
- 2007-12-27 CN CN2007800517444A patent/CN101681918B/zh not_active Expired - Fee Related
-
2010
- 2010-09-13 HK HK10108614.7A patent/HK1142170A1/xx not_active IP Right Cessation
- 2010-09-21 HK HK10109014.1A patent/HK1142718A1/xx not_active IP Right Cessation
-
2015
- 2015-03-20 US US14/664,158 patent/US10263149B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004532133A (ja) * | 2001-03-30 | 2004-10-21 | ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア | ナノ構造及びナノワイヤーの組立方法並びにそれらから組立てられた装置 |
JP2003282942A (ja) * | 2001-08-22 | 2003-10-03 | Sony Corp | 窒化物半導体素子及び窒化物半導体素子の製造方法 |
JP2006332650A (ja) * | 2005-05-24 | 2006-12-07 | Lg Electronics Inc | ロッド型発光素子及びその製造方法 |
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JP2012004535A (ja) * | 2010-05-17 | 2012-01-05 | Sharp Corp | 発光装置の製造方法 |
EP2583317A4 (en) * | 2010-06-18 | 2016-06-15 | Glo Ab | NANODRAHT LED STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF |
WO2011160051A2 (en) | 2010-06-18 | 2011-12-22 | Glo Ab | Nanowire led structure and method for manufacturing the same |
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JP5453105B2 (ja) | 2014-03-26 |
CN101669219A (zh) | 2010-03-10 |
US20100283064A1 (en) | 2010-11-11 |
CN102255018B (zh) | 2013-06-19 |
JP2010514206A (ja) | 2010-04-30 |
KR20090096704A (ko) | 2009-09-14 |
US20150333225A1 (en) | 2015-11-19 |
EP2126986B1 (en) | 2019-09-18 |
WO2008079076A1 (en) | 2008-07-03 |
CN102255018A (zh) | 2011-11-23 |
HK1142718A1 (en) | 2010-12-10 |
EP2095425B1 (en) | 2019-04-17 |
JP5145353B2 (ja) | 2013-02-13 |
HK1142170A1 (en) | 2010-11-26 |
US10263149B2 (en) | 2019-04-16 |
CN101681918A (zh) | 2010-03-24 |
CN101681918B (zh) | 2012-08-29 |
WO2008079079A1 (en) | 2008-07-03 |
EP2126986A1 (en) | 2009-12-02 |
EP2095425A4 (en) | 2012-10-10 |
EP2095425A1 (en) | 2009-09-02 |
CN101669219B (zh) | 2011-10-05 |
EP2126986A4 (en) | 2012-10-10 |
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