JP6486519B2 - ナノワイヤサイズの光電構造及びその選択された部分を改質する方法 - Google Patents
ナノワイヤサイズの光電構造及びその選択された部分を改質する方法 Download PDFInfo
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Description
Claims (5)
- 支持体と、前記支持体の上に配置された複数のナノワイヤとを備え、各ナノワイヤが先端部及び側壁を備えるLED構造を製造する方法であって、
前記ナノワイヤの形成中又は形成後に前記ナノワイヤの前記側壁の導電率と比較して前記ナノワイヤの前記先端部の導電率を低下させるか又は零にするために、H 2 を含むキャリアガスを使用するMOCVDにより前記ナノワイヤのGaN層を成膜することを含むことを特徴とする方法。 - ナノワイヤ成長条件を制御しない場合の前記先端部の導電率と比較して前記先端部の導電率が少なくとも1桁小さくなるようにナノワイヤ成長条件を制御することを更に含むことを特徴とする請求項1に記載の方法。
- 前記側壁はm面を含み、前記先端部はp面を含むことを特徴とする請求項1に記載の方法。
- 前記GaN層を成膜する前に、H2を含まないキャリアガスを使うMOCVDにより前記ナノワイヤのコア上にInGaN発光層を成膜することを更に含むことを特徴とする請求項3に記載の方法。
- 前記ナノワイヤは、第1の導電型の半導体コアと第2の導電型の半導体シェルとを備え、且つ前記側壁及び前記先端部は前記第2の導電型の半導体シェルを構成することを特徴とする請求項1に記載の方法。
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US201261719133P | 2012-10-26 | 2012-10-26 | |
US61/719,133 | 2012-10-26 |
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JP2015539716A Division JP6293157B2 (ja) | 2012-10-26 | 2013-10-22 | ナノワイヤサイズの光電構造及びその選択された部分を改質する方法 |
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JP2018137439A JP2018137439A (ja) | 2018-08-30 |
JP2018137439A5 JP2018137439A5 (ja) | 2018-10-18 |
JP6486519B2 true JP6486519B2 (ja) | 2019-03-20 |
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JP2018023304A Active JP6486519B2 (ja) | 2012-10-26 | 2018-02-13 | ナノワイヤサイズの光電構造及びその選択された部分を改質する方法 |
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US (3) | US9166106B2 (ja) |
EP (1) | EP2912699B1 (ja) |
JP (2) | JP6293157B2 (ja) |
TW (1) | TW201428999A (ja) |
WO (1) | WO2014066379A1 (ja) |
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JP6322197B2 (ja) | 2012-10-26 | 2018-05-09 | グロ アーベーGlo Ab | ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。 |
US9166106B2 (en) | 2012-10-26 | 2015-10-20 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
KR101554032B1 (ko) * | 2013-01-29 | 2015-09-18 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
JP6205747B2 (ja) * | 2013-02-21 | 2017-10-04 | 富士通株式会社 | 光半導体素子及びその製造方法 |
US11502219B2 (en) * | 2013-03-14 | 2022-11-15 | The Royal Institution For The Advancement Of Learning/Mcgill University | Methods and devices for solid state nanowire devices |
JP2016519421A (ja) | 2013-03-15 | 2016-06-30 | グロ アーベーGlo Ab | ナノワイヤledの抽出効率を向上させる高誘電体膜 |
US9522821B2 (en) * | 2013-04-18 | 2016-12-20 | Bo Cui | Method of fabricating nano-scale structures and nano-scale structures fabricated using the method |
KR102075985B1 (ko) * | 2013-10-14 | 2020-02-11 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
FR3016081B1 (fr) * | 2013-12-27 | 2017-03-24 | Aledia | Dispositif optoelectronique a diodes electroluminescentes a courant de fuite reduit |
KR102188497B1 (ko) * | 2014-03-27 | 2020-12-09 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
KR102188494B1 (ko) * | 2014-07-21 | 2020-12-09 | 삼성전자주식회사 | 반도체 발광소자, 반도체 발광소자 제조방법 및 반도체 발광소자 패키지 제조방법 |
EP3180806A4 (en) * | 2014-08-12 | 2018-03-07 | Glo Ab | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
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