JP2013539907A - 発光するナノワイヤー系光電子デバイス - Google Patents
発光するナノワイヤー系光電子デバイス Download PDFInfo
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- 239000002070 nanowire Substances 0.000 title claims abstract description 190
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 69
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 230000006798 recombination Effects 0.000 claims abstract description 19
- 238000005215 recombination Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 48
- 238000002347 injection Methods 0.000 claims description 34
- 239000007924 injection Substances 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 230000000903 blocking effect Effects 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052738 indium Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 13
- 238000000407 epitaxy Methods 0.000 description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
- 229910052749 magnesium Inorganic materials 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000011149 active material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003363 ZnMgO Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000003042 antagnostic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
・InGaN/GaNマルチ量子井戸内のインジウムが豊富な領域の外側における電荷キャリアの転移;
・局所的な転移及び欠陥による損失;
・熱的効果による損失;
・電子―正孔対の空間的分離を発生させ、界面状態を顕在化するInGaN/GaNヘテロ構造間の顕著な圧電分極;
・直接またはフォノン支援機構によるオージェ再結合;及び
・マルチ量子井戸から脱出する電子及びこれらの井戸内の低い正孔濃度による非効率なキャリア注入。
−ナノワイヤーの活性領域が、軸方向、つまりナノワイヤー成長軸に沿ったエピタキシャル成長を有するマルチ量子井戸を有する閉じ込め構造を含むもの、
−ナノワイヤーの活性領域が、半径方向、つまりナノワイヤー成長軸周りに形成される体積方向のエピタキシャル成長を有するマルチ量子井戸を有する閉じ込め構造を含むもの。
・他方に対して不適合なメッシュパラメータを有する材料でそれぞれ形成された、基板上へのナノワイヤーの成長。そのため、導電性低コスト基板であり、大きな寸法で製造することが可能なシリコンを、プレーナ技術では不可能であるIII−N材料からなるナノワイヤーの成長に対して想定してもよい。この変形例は、製造コスト及び製造方法の単純化の両方の点、特に電気的注入の点で利点を有する;
・自由表面における応力緩和による良好な結晶品質。そのため、プレーナ構造と比較して、非放射再結合中心の数を減少させ、特に貫通転位をなくすことが可能である;
・製造方法の複雑化を伴うことのない、光のより良好な抽出。
・非意図的にドープされた半導体材料からなる少なくとも1つのナノワイヤーの形状に形成された、電子―正孔対の放射再結合のための活性半導体領域;
・第1の導電型を有し、前記ナノワイヤーを形成する材料のバンドギャップよりも小さなバンドギャップを有するドープされた半導体材料からなる、1つまたはそれぞれの前記ナノワイヤーに正孔を半径方向に注入するための半導体領域;及び
・前記第1の導電型と反対の第2の導電型を有するドープされた半導体材料からなる、1つまたはそれぞれのナノワイヤーに電子を軸方向に注入するための半導体領域を含む、光電子デバイスを目的とする。
・前記活性領域が、非意図的にドープされたInGaNから形成され;
・p型ドープされた領域が、p型ドープされたGaNまたは前記活性領域よりもIn濃度の低いp型ドープされたInGaNから形成され;
・n型ドープされた領域が、n型ドープされたSiまたはn型ドープされたGaNから形成される。
・前記ナノワイヤーが、1平方センチメートル当たり108から1010の間の範囲の密度を有し;
・前記ナノワイヤーが、50ナノメートルから500ナノメートルの間の範囲の直径を有し;
・前記ナノワイヤーの前記活性領域の高さが、40ナノメートルから5マイクロメートルの間の範囲である。
・dはナノワイヤー84の直径であり;
・dnはcm2あたりのナノワイヤーの数で表される、ナノワイヤー84の表面密度である。
・Fはナノワイヤー84の充填因子;
・NCは、ナノワイヤー84の材料の伝導バンドにおける伝導状態の実効密度;
・EF及びECはそれぞれナノワイヤー84の材料のフェルミ準位及び伝導エネルギー準位;
・kはボルツマン定数;
・Tはナノワイヤー84の接合部温度(活性領域の温度);
・eは素電荷;
・Bはナノワイヤー84の材料の2分子再結合係数である。
・NC=1018cm−3;
・EF−EC=150meV;
・B=10−11cm3s−1;
・及びTは接合部温度である。
・108から1010の間の範囲の表面密度dn、例えば4×109cm−2の密度;
・ナノワイヤーが、50ナノメートルから500ナノメートルの間の範囲の直径d、例えば100ナノメートルの直径を有し;
・ナノワイヤーの活性領域の高さが40ナノメートルから5マイクロメートルの間の範囲である。
・nはLED40における量子井戸の数であり、
・WQWは、活性領域46の範囲内のマルチ量子井戸の軸方向寸法である。
・1μmまたは100ナノメートルの高さWDHを有する活性領域を有するLED80;及び
・2.5ナノメートルに等しい厚さWQWについて5つの量子井戸を含むLED40である。
・仮定1:電子―正孔対の放射再結合は、ナノワイヤーの活性領域46の体積全体で発生する;
・仮定2:放射再結合が発生する領域の厚さは、現実の厚さが2.5ナノメートルであるのに対して、1ナノメートルを超えない。この仮定は、強い内部圧電場の存在により活性領域の実効厚さが減少することを示す非特許文献1の結果に基づく;及び
・仮定3:放射再結合は、InGaN/GaNマルチ量子井戸を有するプレーナLED構造の場合のように、正孔注入領域52に最も近接して位置する量子井戸内でのみ発生する。
・R1は、本発明に従うLED80のナノワイヤー84の半径であり;
・L1=WDHは、ナノワイヤー84の長さであり;
・R3は、半径方向マルチ量子ナノワイヤーに基づくLED60におけるナノワイヤーのコアの半径、つまり領域72を除く半径であり;
・L3は、LED60内のナノワイヤーの高さであり;
WQWは、LED60内のマルチ量子井戸の厚さ、つまりLED60の活性領域66で形成される円筒の厚さであり;
・Nは、LED60内の量子井戸の数である。
・R1=R3=R=50nm
・L1=L3
・n=5、及び
・WQW=2.5nm
・LED60の現実の動作についての仮定に関しては前述のとおりである。
12 GaN層
14 サファイア基板
16 活性層
18 GaN副層
20 InGaN副層
22 AlGaN電子ブロック層
24 p型GaN層
26 下部電気的コンタクト
28 上部電気的コンタクト
30 従来技術のプレーナLED
32 InGaN層
34 二重ヘテロ構造
40 従来技術のナノワイヤー
42 シリコン基板
44 GaN領域
46 活性領域
48 GaN領域
50 InGaN領域
52 GaN層
54 EBL領域
60 従来技術のナノワイヤー
62 シリコン基板
64 GaNコア
66 活性領域
68 GaN領域
70 InGaN領域
72 GaN体積
74 EBL体積
80 LED
82 n型シリコン基板
84 ナノワイヤー
86 ナノワイヤー上部
88 平坦化層
90 下部オーミックコンタクト
92 上部オーミックコンタクト
100 GaNナノワイヤー
110 InGaNナノワイヤー
112 GaN層
120 成長マスク
210 ナノLED
212 支持部
214 共通絶縁基板
216 電気的伝導層
220 n型ドープ層
222 コア
224 シェル
226 上部電気的コンタクト
228 平坦化層
Claims (14)
- ・非意図的にドープされた半導体材料からなる少なくとも1つのナノワイヤーの形状に形成された、電子―正孔対の放射再結合のための活性半導体領域(84);
・第1の導電型を有し、前記ナノワイヤーを形成する材料のバンドギャップよりも小さなバンドギャップを有するドープされた半導体材料からなる、1つまたはそれぞれの前記ナノワイヤーに正孔を半径方向に注入するための半導体領域(88);及び
・前記第1の導電型と反対の第2の導電型を有するドープされた半導体材料からなる、1つまたはそれぞれのナノワイヤーに電子を軸方向に注入するための半導体領域(82)を含む、光電子デバイス。 - 前記活性領域(84)が、単一の半導体材料からなる、請求項1に記載の光電子デバイス。
- 前記活性領域(84)が、III−V型半導体材料またはII−VI型半導体材料、特にIII−N型半導体材料から形成される、請求項2に記載の光電子デバイス。
- ・前記活性領域(84)が、非意図的にドープされたInGaNから形成され;
・正孔の注入のための前記ドープされた領域(88)が、p型ドープされたGaNまたは前記活性領域よりもIn濃度の低いp型ドープされたInGaNから形成され;
・電子注入のための前記ドープされた領域(82)が、n型ドープされたSiまたはn型ドープされたGaNから形成される、請求項3に記載の光電子デバイス。 - 前記活性領域(84)の高さが、以下の数式の関係に従って選択された最小値を有する、請求項3または4に記載の光電子デバイス。
- 前記活性領域が、InGaNから形成され、
・前記ナノワイヤー(84)が、1平方センチメートル当たり108から1010の間の範囲の密度を有し;
・前記ナノワイヤー(84)が、50ナノメートルから500ナノメートルの間の範囲の直径を有し;
・前記ナノワイヤーの前記活性領域(84)の高さが、40ナノメートルから5マイクロメートルの間の範囲である、請求項3から5のいずれか一項に記載の光電子デバイス。 - 前記ナノワイヤー(84)が、4×109cm−2の密度、100ナノメートルの直径及び40ナノメートルの活性領域高さを有する、請求項6に記載の光電子デバイス。
- 前記活性領域と前記p型ドープされた領域との間に電子ブロッキング領域が存在しない、請求項1から7のいずれか一項に記載の光電子デバイス。
- 前記ナノワイヤーが、n型ドープされた半導体材料からなる基板(82)上に形成され、前記基板が、前記電子注入領域を形成する、請求項1から8のいずれか一項に記載の光電子デバイス。
- 前記ナノワイヤー(84)が、電子注入のためのn型ドープされた半導体の基部を含む、請求項1から8のいずれか一項に記載の光電子デバイス。
- 前記ナノワイヤー(84)が、n型ドープされた半導体材料からなり、前記活性領域を形成する材料と同一の族からなり、前記ナノワイヤーを支える連続層を含む基板(82)から形成され、前記連続層が、前記電子注入領域を形成する、請求項1から8のいずれか一項に記載の光電子デバイス。
- 前記ナノワイヤー(84)が、基板(82)上に形成され、前記正孔注入領域(88)が、前記基板(82)に対向する前記ナノワイヤー(84)の部分を部分的に覆う、請求項1から11のいずれか一項に記載の光電子デバイス。
- 前記正孔注入領域(88)が、前記ナノワイヤー(84)の周辺の3/4より少ない領域を覆う、請求項12に記載の光電子デバイス。
- 前記正孔注入領域(88)が、平坦化材料層を形成する、請求項1から13のいずれか一項に記載の光電子デバイス。
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