FR2964796B1 - Dispositif optoelectronique a base de nanofils pour l'emission de lumiere - Google Patents

Dispositif optoelectronique a base de nanofils pour l'emission de lumiere

Info

Publication number
FR2964796B1
FR2964796B1 FR1057330A FR1057330A FR2964796B1 FR 2964796 B1 FR2964796 B1 FR 2964796B1 FR 1057330 A FR1057330 A FR 1057330A FR 1057330 A FR1057330 A FR 1057330A FR 2964796 B1 FR2964796 B1 FR 2964796B1
Authority
FR
France
Prior art keywords
nanowlas
light emission
device based
optoelectronic device
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1057330A
Other languages
English (en)
Other versions
FR2964796A1 (fr
Inventor
Philippe Gilet
Anne-Laure Bavencove
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1057330A priority Critical patent/FR2964796B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to EP11773065.5A priority patent/EP2617069B1/fr
Priority to CN201180032830.7A priority patent/CN102959740B/zh
Priority to JP2013527669A priority patent/JP5940069B2/ja
Priority to PCT/FR2011/052078 priority patent/WO2012035243A1/fr
Publication of FR2964796A1 publication Critical patent/FR2964796A1/fr
Priority to US13/726,929 priority patent/US9093607B2/en
Application granted granted Critical
Publication of FR2964796B1 publication Critical patent/FR2964796B1/fr
Priority to US14/736,469 priority patent/US9263633B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
FR1057330A 2010-09-14 2010-09-14 Dispositif optoelectronique a base de nanofils pour l'emission de lumiere Active FR2964796B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1057330A FR2964796B1 (fr) 2010-09-14 2010-09-14 Dispositif optoelectronique a base de nanofils pour l'emission de lumiere
CN201180032830.7A CN102959740B (zh) 2010-09-14 2011-09-12 用于光发射的基于纳米线的光电器件
JP2013527669A JP5940069B2 (ja) 2010-09-14 2011-09-12 発光するナノワイヤー系光電子デバイス
PCT/FR2011/052078 WO2012035243A1 (fr) 2010-09-14 2011-09-12 Dispositif optoelectronique a base de nanofils pour l'émission de lumière
EP11773065.5A EP2617069B1 (fr) 2010-09-14 2011-09-12 Dispositif optoélectronique à base de nanofils pour l'émission de lumière
US13/726,929 US9093607B2 (en) 2010-09-14 2012-12-26 Nanowire-based optoelectronic device for light emission
US14/736,469 US9263633B2 (en) 2010-09-14 2015-06-11 Nanowire-based optoelectronic device for light-emission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1057330A FR2964796B1 (fr) 2010-09-14 2010-09-14 Dispositif optoelectronique a base de nanofils pour l'emission de lumiere

Publications (2)

Publication Number Publication Date
FR2964796A1 FR2964796A1 (fr) 2012-03-16
FR2964796B1 true FR2964796B1 (fr) 2014-03-21

Family

ID=43836575

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1057330A Active FR2964796B1 (fr) 2010-09-14 2010-09-14 Dispositif optoelectronique a base de nanofils pour l'emission de lumiere

Country Status (1)

Country Link
FR (1) FR2964796B1 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3000611B1 (fr) * 2012-12-28 2016-05-06 Aledia Dispositif optoelectronique a microfils ou nanofils
FR3000613B1 (fr) * 2012-12-28 2016-05-27 Aledia Dispositif optoelectronique a microfils ou nanofils
FR3000612B1 (fr) * 2012-12-28 2016-05-06 Commissariat Energie Atomique Dispositif optoelectronique a microfils ou nanofils
US11961875B2 (en) 2017-12-20 2024-04-16 Lumileds Llc Monolithic segmented LED array architecture with islanded epitaxial growth
CN108565322A (zh) * 2018-06-01 2018-09-21 广东工业大学 一种led外延芯片及一种led外延芯片的制备方法
US11201265B2 (en) 2018-09-27 2021-12-14 Lumileds Llc Micro light emitting devices
US11777059B2 (en) 2019-11-20 2023-10-03 Lumileds Llc Pixelated light-emitting diode for self-aligned photoresist patterning
US11942507B2 (en) 2020-03-11 2024-03-26 Lumileds Llc Light emitting diode devices
US11735695B2 (en) 2020-03-11 2023-08-22 Lumileds Llc Light emitting diode devices with current spreading layer
US11848402B2 (en) 2020-03-11 2023-12-19 Lumileds Llc Light emitting diode devices with multilayer composite film including current spreading layer
US11569415B2 (en) 2020-03-11 2023-01-31 Lumileds Llc Light emitting diode devices with defined hard mask opening
US11901491B2 (en) 2020-10-29 2024-02-13 Lumileds Llc Light emitting diode devices
US11626538B2 (en) 2020-10-29 2023-04-11 Lumileds Llc Light emitting diode device with tunable emission
US12040432B2 (en) 2020-10-30 2024-07-16 Lumileds Llc Light emitting diode devices with patterned TCO layer including different thicknesses
US11955583B2 (en) 2020-12-01 2024-04-09 Lumileds Llc Flip chip micro light emitting diodes
US11705534B2 (en) 2020-12-01 2023-07-18 Lumileds Llc Methods of making flip chip micro light emitting diodes
US11600656B2 (en) 2020-12-14 2023-03-07 Lumileds Llc Light emitting diode device
US11935987B2 (en) 2021-11-03 2024-03-19 Lumileds Llc Light emitting diode arrays with a light-emitting pixel area

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008140611A2 (fr) * 2006-12-18 2008-11-20 The Regents Of The University Of California Diodes électroluminescentes et lasers à base d'un réseau de fils nanométriques
EP2126986B1 (fr) * 2006-12-22 2019-09-18 QuNano AB Diode électroluminescente avec structure de nanofil verticale et procédé de fabrication de celle-ci
TWI340481B (en) * 2007-06-11 2011-04-11 Univ Nat Chiao Tung The method for promoting light emission efficiency of led using nano-rod structure
KR20090058952A (ko) * 2007-12-05 2009-06-10 삼성전자주식회사 나노로드를 이용한 발광소자 및 그 제조 방법
GB2458442A (en) * 2008-02-29 2009-09-23 Univ Dublin City Wide band gap nanostructured devices
US8138493B2 (en) * 2008-07-09 2012-03-20 Qunano Ab Optoelectronic semiconductor device
US7863625B2 (en) * 2008-07-24 2011-01-04 Hewlett-Packard Development Company, L.P. Nanowire-based light-emitting diodes and light-detection devices with nanocrystalline outer surface

Also Published As

Publication number Publication date
FR2964796A1 (fr) 2012-03-16

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