FR2964796B1 - Dispositif optoelectronique a base de nanofils pour l'emission de lumiere - Google Patents
Dispositif optoelectronique a base de nanofils pour l'emission de lumiereInfo
- Publication number
- FR2964796B1 FR2964796B1 FR1057330A FR1057330A FR2964796B1 FR 2964796 B1 FR2964796 B1 FR 2964796B1 FR 1057330 A FR1057330 A FR 1057330A FR 1057330 A FR1057330 A FR 1057330A FR 2964796 B1 FR2964796 B1 FR 2964796B1
- Authority
- FR
- France
- Prior art keywords
- nanowlas
- light emission
- device based
- optoelectronic device
- optoelectronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005693 optoelectronics Effects 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1057330A FR2964796B1 (fr) | 2010-09-14 | 2010-09-14 | Dispositif optoelectronique a base de nanofils pour l'emission de lumiere |
CN201180032830.7A CN102959740B (zh) | 2010-09-14 | 2011-09-12 | 用于光发射的基于纳米线的光电器件 |
JP2013527669A JP5940069B2 (ja) | 2010-09-14 | 2011-09-12 | 発光するナノワイヤー系光電子デバイス |
PCT/FR2011/052078 WO2012035243A1 (fr) | 2010-09-14 | 2011-09-12 | Dispositif optoelectronique a base de nanofils pour l'émission de lumière |
EP11773065.5A EP2617069B1 (fr) | 2010-09-14 | 2011-09-12 | Dispositif optoélectronique à base de nanofils pour l'émission de lumière |
US13/726,929 US9093607B2 (en) | 2010-09-14 | 2012-12-26 | Nanowire-based optoelectronic device for light emission |
US14/736,469 US9263633B2 (en) | 2010-09-14 | 2015-06-11 | Nanowire-based optoelectronic device for light-emission |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1057330A FR2964796B1 (fr) | 2010-09-14 | 2010-09-14 | Dispositif optoelectronique a base de nanofils pour l'emission de lumiere |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2964796A1 FR2964796A1 (fr) | 2012-03-16 |
FR2964796B1 true FR2964796B1 (fr) | 2014-03-21 |
Family
ID=43836575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1057330A Active FR2964796B1 (fr) | 2010-09-14 | 2010-09-14 | Dispositif optoelectronique a base de nanofils pour l'emission de lumiere |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2964796B1 (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3000611B1 (fr) * | 2012-12-28 | 2016-05-06 | Aledia | Dispositif optoelectronique a microfils ou nanofils |
FR3000613B1 (fr) * | 2012-12-28 | 2016-05-27 | Aledia | Dispositif optoelectronique a microfils ou nanofils |
FR3000612B1 (fr) * | 2012-12-28 | 2016-05-06 | Commissariat Energie Atomique | Dispositif optoelectronique a microfils ou nanofils |
US11961875B2 (en) | 2017-12-20 | 2024-04-16 | Lumileds Llc | Monolithic segmented LED array architecture with islanded epitaxial growth |
CN108565322A (zh) * | 2018-06-01 | 2018-09-21 | 广东工业大学 | 一种led外延芯片及一种led外延芯片的制备方法 |
US11201265B2 (en) | 2018-09-27 | 2021-12-14 | Lumileds Llc | Micro light emitting devices |
US11777059B2 (en) | 2019-11-20 | 2023-10-03 | Lumileds Llc | Pixelated light-emitting diode for self-aligned photoresist patterning |
US11942507B2 (en) | 2020-03-11 | 2024-03-26 | Lumileds Llc | Light emitting diode devices |
US11735695B2 (en) | 2020-03-11 | 2023-08-22 | Lumileds Llc | Light emitting diode devices with current spreading layer |
US11848402B2 (en) | 2020-03-11 | 2023-12-19 | Lumileds Llc | Light emitting diode devices with multilayer composite film including current spreading layer |
US11569415B2 (en) | 2020-03-11 | 2023-01-31 | Lumileds Llc | Light emitting diode devices with defined hard mask opening |
US11901491B2 (en) | 2020-10-29 | 2024-02-13 | Lumileds Llc | Light emitting diode devices |
US11626538B2 (en) | 2020-10-29 | 2023-04-11 | Lumileds Llc | Light emitting diode device with tunable emission |
US12040432B2 (en) | 2020-10-30 | 2024-07-16 | Lumileds Llc | Light emitting diode devices with patterned TCO layer including different thicknesses |
US11955583B2 (en) | 2020-12-01 | 2024-04-09 | Lumileds Llc | Flip chip micro light emitting diodes |
US11705534B2 (en) | 2020-12-01 | 2023-07-18 | Lumileds Llc | Methods of making flip chip micro light emitting diodes |
US11600656B2 (en) | 2020-12-14 | 2023-03-07 | Lumileds Llc | Light emitting diode device |
US11935987B2 (en) | 2021-11-03 | 2024-03-19 | Lumileds Llc | Light emitting diode arrays with a light-emitting pixel area |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008140611A2 (fr) * | 2006-12-18 | 2008-11-20 | The Regents Of The University Of California | Diodes électroluminescentes et lasers à base d'un réseau de fils nanométriques |
EP2126986B1 (fr) * | 2006-12-22 | 2019-09-18 | QuNano AB | Diode électroluminescente avec structure de nanofil verticale et procédé de fabrication de celle-ci |
TWI340481B (en) * | 2007-06-11 | 2011-04-11 | Univ Nat Chiao Tung | The method for promoting light emission efficiency of led using nano-rod structure |
KR20090058952A (ko) * | 2007-12-05 | 2009-06-10 | 삼성전자주식회사 | 나노로드를 이용한 발광소자 및 그 제조 방법 |
GB2458442A (en) * | 2008-02-29 | 2009-09-23 | Univ Dublin City | Wide band gap nanostructured devices |
US8138493B2 (en) * | 2008-07-09 | 2012-03-20 | Qunano Ab | Optoelectronic semiconductor device |
US7863625B2 (en) * | 2008-07-24 | 2011-01-04 | Hewlett-Packard Development Company, L.P. | Nanowire-based light-emitting diodes and light-detection devices with nanocrystalline outer surface |
-
2010
- 2010-09-14 FR FR1057330A patent/FR2964796B1/fr active Active
Also Published As
Publication number | Publication date |
---|---|
FR2964796A1 (fr) | 2012-03-16 |
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