FR3000611B1 - Dispositif optoelectronique a microfils ou nanofils - Google Patents

Dispositif optoelectronique a microfils ou nanofils

Info

Publication number
FR3000611B1
FR3000611B1 FR1262927A FR1262927A FR3000611B1 FR 3000611 B1 FR3000611 B1 FR 3000611B1 FR 1262927 A FR1262927 A FR 1262927A FR 1262927 A FR1262927 A FR 1262927A FR 3000611 B1 FR3000611 B1 FR 3000611B1
Authority
FR
France
Prior art keywords
nanowil
microfill
optoelectronic
optoelectronic microfill
nanowil device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1262927A
Other languages
English (en)
Other versions
FR3000611A1 (fr
Inventor
Benoit Amstatt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Original Assignee
Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aledia filed Critical Aledia
Priority to FR1262927A priority Critical patent/FR3000611B1/fr
Priority to EP13821896.1A priority patent/EP2939276B1/fr
Priority to US14/758,197 priority patent/US9899566B2/en
Priority to PCT/FR2013/053272 priority patent/WO2014102512A1/fr
Publication of FR3000611A1 publication Critical patent/FR3000611A1/fr
Application granted granted Critical
Publication of FR3000611B1 publication Critical patent/FR3000611B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
FR1262927A 2012-12-28 2012-12-28 Dispositif optoelectronique a microfils ou nanofils Expired - Fee Related FR3000611B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1262927A FR3000611B1 (fr) 2012-12-28 2012-12-28 Dispositif optoelectronique a microfils ou nanofils
EP13821896.1A EP2939276B1 (fr) 2012-12-28 2013-12-27 Dispositif opto-électronique à microfils ou nanofils
US14/758,197 US9899566B2 (en) 2012-12-28 2013-12-27 Optoelectronic device comprising microwires or nanowires
PCT/FR2013/053272 WO2014102512A1 (fr) 2012-12-28 2013-12-27 Dispositif optoelectronique a microfils ou nanofils

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1262927A FR3000611B1 (fr) 2012-12-28 2012-12-28 Dispositif optoelectronique a microfils ou nanofils

Publications (2)

Publication Number Publication Date
FR3000611A1 FR3000611A1 (fr) 2014-07-04
FR3000611B1 true FR3000611B1 (fr) 2016-05-06

Family

ID=48407641

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1262927A Expired - Fee Related FR3000611B1 (fr) 2012-12-28 2012-12-28 Dispositif optoelectronique a microfils ou nanofils

Country Status (1)

Country Link
FR (1) FR3000611B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3044469B1 (fr) * 2015-11-30 2018-03-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique comportant des structures semiconductrices tridimensionnelles a portion monocristalline elargie

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101681813B (zh) * 2007-01-12 2012-07-11 昆南诺股份有限公司 氮化物纳米线及其制造方法
SE533090C2 (sv) * 2008-07-09 2010-06-22 Qunano Ab Nanostrukturerad ljusdiod
DE102010012711A1 (de) * 2010-03-25 2011-09-29 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
CA2802539A1 (fr) * 2010-06-18 2011-12-22 Glo Ab Structure a diodes electroluminescentes de nanofils et procede de fabrication associe
KR101691906B1 (ko) * 2010-09-14 2017-01-02 삼성전자주식회사 Ⅲ족 질화물 나노로드 발광 소자 제조방법
FR2964796B1 (fr) * 2010-09-14 2014-03-21 Commissariat Energie Atomique Dispositif optoelectronique a base de nanofils pour l'emission de lumiere
FR2975532B1 (fr) * 2011-05-18 2013-05-10 Commissariat Energie Atomique Connexion electrique en serie de nanofils emetteurs de lumiere
SG183650A1 (en) * 2011-02-25 2012-09-27 Agency Science Tech & Res A photonic device and method of making the same

Also Published As

Publication number Publication date
FR3000611A1 (fr) 2014-07-04

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