FR3061607B1 - Dispositif optoelectronique a diodes electroluminescentes - Google Patents

Dispositif optoelectronique a diodes electroluminescentes Download PDF

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Publication number
FR3061607B1
FR3061607B1 FR1663507A FR1663507A FR3061607B1 FR 3061607 B1 FR3061607 B1 FR 3061607B1 FR 1663507 A FR1663507 A FR 1663507A FR 1663507 A FR1663507 A FR 1663507A FR 3061607 B1 FR3061607 B1 FR 3061607B1
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FR
France
Prior art keywords
light emitting
shell
semiconductor element
optoelectronic device
emitting diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1663507A
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English (en)
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FR3061607A1 (fr
Inventor
Wei Sin Tan
Philippe Gilet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
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Aledia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1663507A priority Critical patent/FR3061607B1/fr
Application filed by Aledia filed Critical Aledia
Priority to US16/474,017 priority patent/US10916579B2/en
Priority to KR1020197021963A priority patent/KR102501822B1/ko
Priority to JP2019535778A priority patent/JP6872618B2/ja
Priority to TW106146180A priority patent/TWI745518B/zh
Priority to EP17822342.6A priority patent/EP3563419B1/fr
Priority to PCT/EP2017/084781 priority patent/WO2018122358A1/fr
Priority to CN201780086496.0A priority patent/CN110301047B/zh
Publication of FR3061607A1 publication Critical patent/FR3061607A1/fr
Application granted granted Critical
Publication of FR3061607B1 publication Critical patent/FR3061607B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/122—Single quantum well structures
    • H01L29/125—Quantum wire structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Optical Filters (AREA)

Abstract

L'invention concerne un dispositif optoélectronique (5) comprenant des diodes électroluminescentes (LED), chaque diode électroluminescente comprenant un élément semiconducteur (22) correspondant à un nanofil, un microfil, et/ou une structure pyramidale de taille nanométrique ou micrométrique, et une coque (24) recouvrant au moins partiellement l'élément semiconducteur et adapté à émettre un rayonnement, et, pour chaque diode électroluminescente, un revêtement photoluminescent (28R, 28G, 28B) comprenant un puits quantique unique, des puits quantiques multiples ou une hétérostructure, recouvrant au moins en partie la coque et en contact avec la coque ou avec l'élément semiconducteur et adapté à convertir par pompage optique le rayonnement émis par la coque en un autre rayonnement.
FR1663507A 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes Expired - Fee Related FR3061607B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1663507A FR3061607B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes
KR1020197021963A KR102501822B1 (ko) 2016-12-29 2017-12-28 발광다이오드를 구비한 광전자장치
JP2019535778A JP6872618B2 (ja) 2016-12-29 2017-12-28 発光ダイオードを備えた光電子デバイス
TW106146180A TWI745518B (zh) 2016-12-29 2017-12-28 具有發光二極體的光電裝置及其製造方法
US16/474,017 US10916579B2 (en) 2016-12-29 2017-12-28 Optoelectronic device with light-emitting diodes
EP17822342.6A EP3563419B1 (fr) 2016-12-29 2017-12-28 Dispositif optoélectronique à diodes électroluminescentes et procédé de sa fabrication
PCT/EP2017/084781 WO2018122358A1 (fr) 2016-12-29 2017-12-28 Dispositif optoélectronique à diodes électroluminescentes
CN201780086496.0A CN110301047B (zh) 2016-12-29 2017-12-28 具有发光二极管的光电设备

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1663507A FR3061607B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes
FR1663507 2016-12-29

Publications (2)

Publication Number Publication Date
FR3061607A1 FR3061607A1 (fr) 2018-07-06
FR3061607B1 true FR3061607B1 (fr) 2019-05-31

Family

ID=59253561

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1663507A Expired - Fee Related FR3061607B1 (fr) 2016-12-29 2016-12-29 Dispositif optoelectronique a diodes electroluminescentes

Country Status (8)

Country Link
US (1) US10916579B2 (fr)
EP (1) EP3563419B1 (fr)
JP (1) JP6872618B2 (fr)
KR (1) KR102501822B1 (fr)
CN (1) CN110301047B (fr)
FR (1) FR3061607B1 (fr)
TW (1) TWI745518B (fr)
WO (1) WO2018122358A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3061605B1 (fr) * 2016-12-29 2019-05-31 Aledia Dispositif optoélectronique à diodes électroluminescentes
US11462659B2 (en) * 2019-09-10 2022-10-04 Koito Manufacturing Co., Ltd. Semiconductor light emitting device and manufacturing method of semiconductor light emitting device
US11923398B2 (en) 2019-12-23 2024-03-05 Lumileds Llc III-nitride multi-wavelength LED arrays
US11404473B2 (en) 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays
JP7423787B2 (ja) * 2019-12-23 2024-01-29 ルミレッズ リミテッド ライアビリティ カンパニー Ｉｉｉ族窒化物マルチ波長ｌｅｄアレイ
KR20210156624A (ko) 2020-06-18 2021-12-27 삼성전자주식회사 나노 막대 발광 소자 및 그 제조 방법
FR3114682B1 (fr) * 2020-09-29 2023-05-19 Aledia Dispositif optoelectronique a diodes electroluminescentes a affichage couleur
US11631786B2 (en) 2020-11-12 2023-04-18 Lumileds Llc III-nitride multi-wavelength LED arrays with etch stop layer
JP2022182009A (ja) * 2021-05-27 2022-12-08 株式会社小糸製作所 半導体発光素子および半導体発光素子の製造方法
FR3125921B1 (fr) * 2021-07-30 2023-07-07 Commissariat Energie Atomique Procédé de fabrication d’un dispositif optoélectronique comportant une étape de réalisation d’une couche mince conductrice de manière conforme et continue par dépôt directif
KR102453545B1 (ko) 2021-11-30 2022-10-12 전남대학교산학협력단 나노막대를 포함하는 나노막대 발광 구조물, 발광소자 및 그 제조방법, 그의 패키지 및 이를 포함하는 조명장치
TWI828466B (zh) * 2022-12-08 2024-01-01 台亞半導體股份有限公司 光電二極體結構

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6096496A (en) * 1997-06-19 2000-08-01 Frankel; Robert D. Supports incorporating vertical cavity emitting lasers and tracking apparatus for use in combinatorial synthesis
CA2442985C (fr) * 2001-03-30 2016-05-31 The Regents Of The University Of California Procede de realisation de nanostructures et de nanocables, et dispositifs etablis a partir de ce type d'equipement
KR100593264B1 (ko) * 2003-06-26 2006-06-26 학교법인 포항공과대학교 ｐ-타입 반도체 박막과 ｎ-타입 산화아연(ＺｎＯ)계나노막대의 이종접합 구조체, 이의 제법 및 이를 이용한소자
US7662706B2 (en) * 2003-11-26 2010-02-16 Qunano Ab Nanostructures formed of branched nanowhiskers and methods of producing the same
KR101186683B1 (ko) * 2005-06-25 2012-09-28 서울옵토디바이스주식회사 질화물 양자웰을 갖는 나노 구조체 및 그것을 채택한발광다이오드
US7465954B2 (en) * 2006-04-28 2008-12-16 Hewlett-Packard Development Company, L.P. Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles
KR100872281B1 (ko) * 2006-12-15 2008-12-05 삼성전기주식회사 나노와이어 구조체를 이용한 반도체 발광소자 및 그제조방법
WO2008140611A2 (fr) * 2006-12-18 2008-11-20 The Regents Of The University Of California Diodes électroluminescentes et lasers à base d'un réseau de fils nanométriques
JP5453105B2 (ja) * 2006-12-22 2014-03-26 クナノ アーベー ナノ構造のｌｅｄ及びデバイス
US8525954B2 (en) * 2007-06-27 2013-09-03 General Electric Company Three-dimensional display article
US8354663B2 (en) * 2007-08-14 2013-01-15 Nitek, Inc. Micro-pixel ultraviolet light emitting diode
US20100180950A1 (en) * 2008-11-14 2010-07-22 University Of Connecticut Low-temperature surface doping/alloying/coating of large scale semiconductor nanowire arrays
KR101603777B1 (ko) * 2009-04-16 2016-03-15 삼성전자주식회사 백색 발광 다이오드
US9112085B2 (en) * 2009-11-30 2015-08-18 The Royal Institution For The Advancement Of Learning/Mcgill University High efficiency broadband semiconductor nanowire devices
US8565281B2 (en) * 2009-12-07 2013-10-22 The Royal Institute For The Advancement Of Learning/Mcgill University Method of pumping quantum dots
TWI401826B (zh) * 2009-12-10 2013-07-11 Walsin Lihwa Corp 增益出光的發光裝置和其方法
WO2011090863A1 (fr) * 2010-01-19 2011-07-28 Eastman Kodak Company Nano-films semi-conducteurs à structure âme-enveloppe ii-vi
US8377729B2 (en) * 2010-01-19 2013-02-19 Eastman Kodak Company Forming II-VI core-shell semiconductor nanowires
US20130216800A1 (en) * 2010-01-21 2013-08-22 Joel D. Brock Perovskite to brownmillerite complex oxide crystal structure transformation induced by oxygen deficient getter layer
US8879598B2 (en) * 2011-08-11 2014-11-04 Sensor Electronic Technology, Inc. Emitting device with compositional and doping inhomogeneities in semiconductor layers
KR20130106690A (ko) * 2012-03-20 2013-09-30 삼성전자주식회사 백색 발광 다이오드
US9997674B2 (en) * 2012-03-30 2018-06-12 Lumileds Llc Optical cavity including a light emitting device and wavelength converting material
CN104769732A (zh) * 2012-09-18 2015-07-08 Glo公司 纳米角锥体大小的光电子结构及其制造方法
US9537044B2 (en) 2012-10-26 2017-01-03 Aledia Optoelectric device and method for manufacturing the same
KR101603207B1 (ko) * 2013-01-29 2016-03-14 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
US20140264261A1 (en) * 2013-03-14 2014-09-18 Michael A. Mastro Light emitting device on metal foam substrate
FR3011383B1 (fr) * 2013-09-30 2017-05-26 Commissariat Energie Atomique Procede de fabrication de dispositifs optoelectroniques a diodes electroluminescentes
DE102013114466A1 (de) * 2013-12-19 2015-06-25 Osram Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
KR102188499B1 (ko) * 2014-07-11 2020-12-09 삼성전자주식회사 나노구조 반도체 발광소자
KR102237129B1 (ko) * 2014-09-23 2021-04-08 엘지이노텍 주식회사 발광 소자
FR3041153B1 (fr) * 2015-09-10 2018-07-27 Aledia Dispositif electroluminescent a capteur de lumiere integre
FR3041152B1 (fr) * 2015-09-10 2018-07-27 Aledia Dispositif electroluminescent a capteur de lumiere integre

Also Published As

Publication number Publication date
FR3061607A1 (fr) 2018-07-06
JP6872618B2 (ja) 2021-05-19
EP3563419A1 (fr) 2019-11-06
WO2018122358A1 (fr) 2018-07-05
US20190319066A1 (en) 2019-10-17
US10916579B2 (en) 2021-02-09
KR20190099055A (ko) 2019-08-23
KR102501822B1 (ko) 2023-02-20
EP3563419B1 (fr) 2021-03-03
JP2020504449A (ja) 2020-02-06
CN110301047B (zh) 2023-04-28
TW201839969A (zh) 2018-11-01
CN110301047A (zh) 2019-10-01
TWI745518B (zh) 2021-11-11

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