JP7423787B2 - Iii族窒化物マルチ波長ledアレイ - Google Patents
Iii族窒化物マルチ波長ledアレイ Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 69
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- 239000010409 thin film Substances 0.000 claims description 8
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- 229910002601 GaN Inorganic materials 0.000 description 30
- 238000005530 etching Methods 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 235000012431 wafers Nutrition 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 238000000231 atomic layer deposition Methods 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 13
- 239000003086 colorant Substances 0.000 description 11
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- 238000012545 processing Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
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- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
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- 239000011029 spinel Substances 0.000 description 1
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- 239000011787 zinc oxide Substances 0.000 description 1
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- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Description
隣接メサの第1のカラー活性領域及び第2のカラー活性領域と電気的に接触した、第1のトレンチ内のカソードメタライゼーションと、第3メサの第1のカラー活性領域及び第2のカラー活性領域と電気的に接触し、且つ隣接メサの第1のカラー活性領域、第2のカラー活性領域、及び第3のカラー活性領域と電気的に接触した第1のトレンチ内のカソードメタライゼーションと電気的に接触した、第2のトレンチ内のカソードメタライゼーションと、第3メサの第3のn型層上のアノードメタライゼーションコンタクトと、を有する。
1つ以上のアノードコンタクトに独立した電圧を提供するように構成されたドライバ回路と、を有する。第13の実施形態において、第12の実施形態は、当該エレクトロニクスシステムが、LEDベースの照明器具、発光ストリップ、発光シート、光学ディスプレイ、及びマイクロLEDディスプレイからなる群から選択されるという特徴を含む。
第1のn型層126は、異なる組成及びドーパント濃度を含む半導体材料の1つ以上の層を有する。特定の実施形態において、第1のn型層126は、例えばn-GaNといったIII族窒化物のエピタキシャル層を成長させることによって形成される。第1のp型層122は、異なる組成及びドーパント濃度を含む半導体材料の1つ以上の層を有する。特定の実施形態において、第1のp型層122は、例えばp-GaNといったIII族窒化物のエピタキシャル層を成長させることによって形成される。使用時に、第1のカラー活性領域124のpn接合を流れる電流が発生され、第1のカラー活性領域124が、材料のバンドギャップエネルギーによって部分的に決定される第1の波長の光を生成する。一部の実施形態において、第1のn型層126、第1のp型層122、及び第1のカラー活性領域124を有する第1のLEDは、1つ以上の量子井戸を含む。1つ以上の実施形態において、第1のカラー活性領域124は青色光を発するように構成される。
様々な実施形態を以下に列挙する。理解されることには、以下に列挙される実施形態は、本発明の範囲に従って、全ての態様及び他の実施形態と組み合わされ得る。
Claims (15)
- 発光ダイオード(LED)アレイであって、
頂面と、第1のp型層、第1のn型層、及び第1のカラー活性領域を含む少なくとも第1のLEDと、該第1のLED上の第1のトンネル接合と、を有する第1メサであり、当該第1メサの前記頂面は、前記第1のトンネル接合上の第2のn型層を有する、第1メサと、
頂面と、前記第1のLEDと、前記第2のn型層、第2のp型層、及び第2のカラー活性領域を含む第2のLEDと、該第2のLED上の第2のトンネル接合と、該第2のトンネル接合上の第3のn型層と、を有する隣接メサと、
前記第1メサと前記隣接メサとを分離する第1のトレンチと、
前記第1のトレンチ内の第1のカソードメタライゼーション層であり、前記第1のカラー活性領域から前記隣接メサの前記第2のカラー活性領域まで連続して延在している第1のカソードメタライゼーション層と、
前記第1メサの前記第2のn型層上及び前記隣接メサの前記頂面上のアノードメタライゼーションコンタクトと、
を有するLEDアレイ。 - VDDラインに接続される第1電極及び第2電極を持つ駆動トランジスタと、該駆動トランジスタの前記第2電極及び選択トランジスタの第1電極に接続されたキャパシタと、前記第1電極及び第2電極を持つ前記選択トランジスタと、を有する薄膜トランジスタ(TFT)ドライバ、を更に有し、前記選択トランジスタの前記第2電極はデータラインに接続され、前記選択トランジスタは、選択ラインによって制御されるように構成され、前記駆動トランジスタの前記第2電極は、前記アノードメタライゼーションコンタクトのうちの1つに接続される、請求項1に記載のLEDアレイ。
- 前記隣接メサの前記頂面は前記第3のn型層を有する、請求項1に記載のLEDアレイ。
- 前記隣接メサは更に、前記第3のn型層上の第3のカラー活性領域と、該第3のカラー活性領域上の第3のp型層とを有し、前記隣接メサの前記頂面は該第3のp型層を有し、
当該LEDアレイは更に、
前記第1のLED、前記第2のLED、前記第2のトンネル接合、及び前記第2のトンネル接合上の前記第3のn型層、を有する第3メサと、
前記隣接メサと前記第3メサとを分離する第2のトレンチと、
前記第2のトレンチ内の第2のカソードメタライゼーション層であり、当該第2のカソードメタライゼーション層は、前記第3メサの前記第2のカラー活性領域から前記隣接メサの前記第3のカラー活性領域まで連続して延在し、前記第1のトレンチ内の前記第1のカソードメタライゼーション層は、前記第1のカラー活性領域から前記隣接メサの前記第2のカラー活性領域へ、そして前記第3のカラー活性領域まで連続して延在している、第2のカソードメタライゼーション層と、
前記第3メサの前記第3のn型層上のアノードメタライゼーションコンタクトと、
を有する請求項1に記載のLEDアレイ。 - 前記隣接メサの前記第3のp型層は、エッチングされていないp型層である、請求項4に記載のLEDアレイ。
- 前記第1のカラー活性領域は青色活性領域であり、前記第2のカラー活性領域は緑色活性領域である、請求項4に記載のLEDアレイ。
- 前記第1のカラー活性領域は青色活性領域であり、前記第2のカラー活性領域は緑色活性領域であり、前記第3のカラー活性領域は赤色活性領域である、請求項4に記載のLEDアレイ。
- 前記第1のp型層、前記第2のp型層、前記第1のn型層、及び前記第2のn型層は、III族窒化物材料を有する、請求項1に記載のLEDアレイ。
- 前記III族窒化物材料はGaNを有する、請求項8に記載のLEDアレイ。
- 前記第1のp型層、前記第2のp型層、前記第3のp型層、前記第1のn型層、前記第2のn型層、及び前記第3のn型層は、III族窒化物材料を有する、請求項4に記載のLEDアレイ。
- 前記III族窒化物材料はGaNを有する、請求項10に記載のLEDアレイ。
- 前記第1メサは側壁を持ち、前記隣接メサは側壁を持ち、前記第1メサの前記側壁及び前記隣接メサの前記側壁は、前記メサが上に形成された基板の頂面と、60度から90度未満までの範囲内の角度を形成する、請求項1に記載のLEDアレイ。
- 請求項2に記載のLEDアレイと、
複数のアノードコンタクトのうちの1つ以上に独立した電圧を提供するように構成されたドライバ回路と、
を有するエレクトロニクスシステム。 - 当該エレクトロニクスシステムは、LEDベースの照明器具、発光ストリップ、発光シート、光学ディスプレイ、及びマイクロLEDディスプレイからなる群から選択される、請求項13に記載のエレクトロニクスシステム。
- LEDアレイを製造する方法であって、
頂面と、第1のp型層、第1のn型層、及び第1のカラー活性領域を含む少なくとも第1のLEDと、該第1のLED上の第1のトンネル接合と、を有する第1メサを形成し、前記頂面は、前記第1のトンネル接合上の第2のn型層を有し、
前記第1のLEDと、前記第2のn型層、第2のp型層、及び第2のカラー活性領域を含む第2のLEDと、該第2のLED上の第2のトンネル接合と、該第2のトンネル接合上の第3のn型層と、を有する隣接メサを形成し、
前記第1メサと前記隣接メサとを分離する第1のトレンチを形成し、
前記第1のトレンチ内の第1のカソードメタライゼーション層を形成し、該第1のカソードメタライゼーション層は、前記第1のカラー活性領域から前記隣接メサの前記第2のカラー活性領域まで連続して延在し、
前記第1メサの前記第2のn型層上及び前記隣接メサの前記第3のn型層上にアノードメタライゼーションコンタクトを形成する、
ことを有する方法。
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