FR3114682B1 - Dispositif optoelectronique a diodes electroluminescentes a affichage couleur - Google Patents

Dispositif optoelectronique a diodes electroluminescentes a affichage couleur Download PDF

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Publication number
FR3114682B1
FR3114682B1 FR2009895A FR2009895A FR3114682B1 FR 3114682 B1 FR3114682 B1 FR 3114682B1 FR 2009895 A FR2009895 A FR 2009895A FR 2009895 A FR2009895 A FR 2009895A FR 3114682 B1 FR3114682 B1 FR 3114682B1
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France
Prior art keywords
emitting diodes
light emitting
diameter
optoelectronic device
wavelength
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FR2009895A
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English (en)
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FR3114682A1 (fr
Inventor
Mehdi Daanoune
Walf Chikhaoui
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Aledia
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Aledia
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Priority to FR2009895A priority Critical patent/FR3114682B1/fr
Application filed by Aledia filed Critical Aledia
Priority to EP21785838.0A priority patent/EP4222785A1/fr
Priority to TW110135969A priority patent/TW202215394A/zh
Priority to KR1020237012424A priority patent/KR20230066607A/ko
Priority to JP2023519562A priority patent/JP2023547042A/ja
Priority to PCT/EP2021/076573 priority patent/WO2022069431A1/fr
Priority to CN202180066524.9A priority patent/CN116325185A/zh
Priority to US18/028,471 priority patent/US20230361152A1/en
Publication of FR3114682A1 publication Critical patent/FR3114682A1/fr
Application granted granted Critical
Publication of FR3114682B1 publication Critical patent/FR3114682B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

DISPOSITIF OPTOELECTRONIQUE A DIODES ELECTROLUMINESCENTES A AFFICHAGE COULEUR La présente description concerne un dispositif optoélectronique (10) comprenant des premières, deuxièmes, et troisièmes diodes électroluminescentes tridimensionnelles à configuration axiale. Chaque diode électroluminescente comprend un élément semiconducteur (20, 22, 24), et une région active reposant sur l'élément semiconducteur. Chaque élément semiconducteur correspond à un microfil, un nanofil, un élément conique ou tronconique de taille nanométrique ou micrométrique. Les premières, deuxièmes, et troisièmes diodes électroluminescentes sont configurées pour émettre respectivement des premier, deuxième, et troisième rayonnements à des première, deuxième, et troisième longueurs d'onde. Les éléments semiconducteurs des premières, deuxièmes, et troisièmes diodes électroluminescentes ont respectivement des premier, deuxième, et troisième diamètres (D1, D2, D3). Le premier diamètre (D1) est inférieur au deuxième diamètre (D2) et le deuxième diamètre (D2) est inférieur au troisième diamètre (D3), la première longueur d'onde étant supérieure à la troisième longueur d'onde et la deuxième longueur d'onde étant supérieure à la première longueur d'onde. Figure pour l'abrégé : Fig. 1
FR2009895A 2020-09-29 2020-09-29 Dispositif optoelectronique a diodes electroluminescentes a affichage couleur Active FR3114682B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2009895A FR3114682B1 (fr) 2020-09-29 2020-09-29 Dispositif optoelectronique a diodes electroluminescentes a affichage couleur
TW110135969A TW202215394A (zh) 2020-09-29 2021-09-28 包括發光二極體的彩色顯示光電裝置
KR1020237012424A KR20230066607A (ko) 2020-09-29 2021-09-28 컬러-표시 발광 다이오드 광전자 장치
JP2023519562A JP2023547042A (ja) 2020-09-29 2021-09-28 カラー表示用発光ダイオード型光電子デバイス
EP21785838.0A EP4222785A1 (fr) 2020-09-29 2021-09-28 Dispositif optoelectronique a diodes electroluminescentes a affichage couleur
PCT/EP2021/076573 WO2022069431A1 (fr) 2020-09-29 2021-09-28 Dispositif optoelectronique a diodes electroluminescentes a affichage couleur
CN202180066524.9A CN116325185A (zh) 2020-09-29 2021-09-28 包括发光二极管的彩色显示光电设备
US18/028,471 US20230361152A1 (en) 2020-09-29 2021-09-28 Color-display light-emitting-diode optoelectronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2009895A FR3114682B1 (fr) 2020-09-29 2020-09-29 Dispositif optoelectronique a diodes electroluminescentes a affichage couleur
FR2009895 2020-09-29

Publications (2)

Publication Number Publication Date
FR3114682A1 FR3114682A1 (fr) 2022-04-01
FR3114682B1 true FR3114682B1 (fr) 2023-05-19

Family

ID=73643084

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2009895A Active FR3114682B1 (fr) 2020-09-29 2020-09-29 Dispositif optoelectronique a diodes electroluminescentes a affichage couleur

Country Status (8)

Country Link
US (1) US20230361152A1 (fr)
EP (1) EP4222785A1 (fr)
JP (1) JP2023547042A (fr)
KR (1) KR20230066607A (fr)
CN (1) CN116325185A (fr)
FR (1) FR3114682B1 (fr)
TW (1) TW202215394A (fr)
WO (1) WO2022069431A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3137499A1 (fr) * 2022-06-30 2024-01-05 Aledia Dispositif optoélectronique à zones de transitions

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3061607B1 (fr) * 2016-12-29 2019-05-31 Aledia Dispositif optoelectronique a diodes electroluminescentes
FR3068515B1 (fr) * 2017-06-30 2019-10-25 Aledia Dispositif optoélectronique comprenant des diodes électroluminescentes
FR3068517B1 (fr) * 2017-06-30 2019-08-09 Aledia Dispositif optoelectronique comportant des structures semiconductrices tridimensionnelles en configuration axiale
US11049900B2 (en) * 2018-08-30 2021-06-29 Analog Devices, Inc. Monolithically integrated nanoemitter light source assembly
KR102652501B1 (ko) * 2018-09-13 2024-03-29 삼성디스플레이 주식회사 발광 소자의 제조방법 및 발광 소자를 포함하는 표시 장치

Also Published As

Publication number Publication date
EP4222785A1 (fr) 2023-08-09
KR20230066607A (ko) 2023-05-16
FR3114682A1 (fr) 2022-04-01
JP2023547042A (ja) 2023-11-09
WO2022069431A1 (fr) 2022-04-07
CN116325185A (zh) 2023-06-23
TW202215394A (zh) 2022-04-16
US20230361152A1 (en) 2023-11-09

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