FR3118291B1 - Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial - Google Patents

Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial Download PDF

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Publication number
FR3118291B1
FR3118291B1 FR2013514A FR2013514A FR3118291B1 FR 3118291 B1 FR3118291 B1 FR 3118291B1 FR 2013514 A FR2013514 A FR 2013514A FR 2013514 A FR2013514 A FR 2013514A FR 3118291 B1 FR3118291 B1 FR 3118291B1
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France
Prior art keywords
optoelectronic device
axial
type
emitting diode
dimensional light
Prior art date
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Active
Application number
FR2013514A
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English (en)
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FR3118291A1 (fr
Inventor
Olga Kryliouk
Mehdi Daanoune
Jérôme Napierala
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Aledia
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Aledia
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Priority to FR2013514A priority Critical patent/FR3118291B1/fr
Application filed by Aledia filed Critical Aledia
Priority to EP21823876.4A priority patent/EP4264682A1/fr
Priority to JP2023537133A priority patent/JP2023554093A/ja
Priority to PCT/EP2021/083863 priority patent/WO2022128485A1/fr
Priority to US18/267,074 priority patent/US20240063191A1/en
Priority to CN202180085768.1A priority patent/CN116783718A/zh
Priority to KR1020237021259A priority patent/KR20230119657A/ko
Priority to TW110146677A priority patent/TW202243278A/zh
Publication of FR3118291A1 publication Critical patent/FR3118291A1/fr
Application granted granted Critical
Publication of FR3118291B1 publication Critical patent/FR3118291B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures

Abstract

Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial La présente description concerne un dispositif optoélectronique (10) comprenant une matrice (15) de diodes électroluminescentes axiales (LED), les diodes électroluminescentes comprenant chacune une zone active (20) configurée pour émettre un rayonnement électromagnétique dont le spectre d'émission comprend un maximum à une première longueur d'onde, la matrice formant un cristal photonique configuré pour former un pic de résonance amplifiant l'intensité dudit rayonnement électromagnétique à au moins une deuxième longueur d'onde différente de la première longueur d'onde. Figure pour l'abrégé : Fig. 1
FR2013514A 2020-12-17 2020-12-17 Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial Active FR3118291B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2013514A FR3118291B1 (fr) 2020-12-17 2020-12-17 Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial
JP2023537133A JP2023554093A (ja) 2020-12-17 2021-12-02 アキシャル型３次元ダイオードを有する光電子デバイス
PCT/EP2021/083863 WO2022128485A1 (fr) 2020-12-17 2021-12-02 Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial
US18/267,074 US20240063191A1 (en) 2020-12-17 2021-12-02 Optoelectronic device with axial-type three-dimensional light-emitting diodes
EP21823876.4A EP4264682A1 (fr) 2020-12-17 2021-12-02 Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial
CN202180085768.1A CN116783718A (zh) 2020-12-17 2021-12-02 具有轴向型三维二极管的光电子器件
KR1020237021259A KR20230119657A (ko) 2020-12-17 2021-12-02 축형 3차원 다이오드를 이용한 광전자 소자
TW110146677A TW202243278A (zh) 2020-12-17 2021-12-14 具有軸向型三維二極體的光電裝置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2013514 2020-12-17
FR2013514A FR3118291B1 (fr) 2020-12-17 2020-12-17 Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial

Publications (2)

Publication Number Publication Date
FR3118291A1 FR3118291A1 (fr) 2022-06-24
FR3118291B1 true FR3118291B1 (fr) 2023-04-14

Family

ID=75746750

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2013514A Active FR3118291B1 (fr) 2020-12-17 2020-12-17 Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial

Country Status (8)

Country Link
US (1) US20240063191A1 (fr)
EP (1) EP4264682A1 (fr)
JP (1) JP2023554093A (fr)
KR (1) KR20230119657A (fr)
CN (1) CN116783718A (fr)
FR (1) FR3118291B1 (fr)
TW (1) TW202243278A (fr)
WO (1) WO2022128485A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2995729B1 (fr) 2012-09-18 2016-01-01 Aledia Dispositif opto-electrique a microfils ou nanofils semiconducteurs et son procede de fabrication
FR2997558B1 (fr) 2012-10-26 2015-12-18 Aledia Dispositif opto-electrique et son procede de fabrication
JP2017157724A (ja) * 2016-03-02 2017-09-07 デクセリアルズ株式会社 表示装置及びその製造方法、並びに発光装置及びその製造方法
FR3083002B1 (fr) * 2018-06-20 2020-07-31 Aledia Dispositif optoelectronique comprenant une matrice de diodes

Also Published As

Publication number Publication date
US20240063191A1 (en) 2024-02-22
TW202243278A (zh) 2022-11-01
WO2022128485A1 (fr) 2022-06-23
KR20230119657A (ko) 2023-08-16
CN116783718A (zh) 2023-09-19
EP4264682A1 (fr) 2023-10-25
JP2023554093A (ja) 2023-12-26
FR3118291A1 (fr) 2022-06-24

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