WO2022128485A1 - Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial - Google Patents
Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial Download PDFInfo
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- WO2022128485A1 WO2022128485A1 PCT/EP2021/083863 EP2021083863W WO2022128485A1 WO 2022128485 A1 WO2022128485 A1 WO 2022128485A1 EP 2021083863 W EP2021083863 W EP 2021083863W WO 2022128485 A1 WO2022128485 A1 WO 2022128485A1
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- light
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 44
- 239000004038 photonic crystal Substances 0.000 claims abstract description 32
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 20
- 238000000295 emission spectrum Methods 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims description 78
- 230000005855 radiation Effects 0.000 claims description 62
- 239000011159 matrix material Substances 0.000 claims description 41
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 230000003287 optical effect Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000000284 resting effect Effects 0.000 claims description 5
- 239000012777 electrically insulating material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 74
- 239000000463 material Substances 0.000 description 32
- 150000001875 compounds Chemical class 0.000 description 18
- 238000001914 filtration Methods 0.000 description 16
- 238000001228 spectrum Methods 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 9
- 238000004088 simulation Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- 230000036961 partial effect Effects 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910003363 ZnMgO Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910001849 group 12 element Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000008263 liquid aerosol Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
Definitions
- TITLE Optoelectronic device with three-dimensional light-emitting diodes of the axial type
- the present application relates to an optoelectronic device, in particular a display screen or an image projection device, comprising light-emitting diodes based on semiconductor materials, and their manufacturing methods.
- a light-emitting diode based on semiconductor materials generally comprises an active zone which is the region of the light-emitting diode from which the majority of the electromagnetic radiation supplied by the light-emitting diode is emitted.
- the structure and composition of the active area are adapted to obtain electromagnetic radiation having the desired properties. In particular, it is generally desired to obtain electromagnetic radiation with a narrow spectrum, ideally substantially monochromatic.
- Examples of three-dimensional semiconductor elements are microwires or nanowires comprising a semiconductor material mainly comprising at least one element from group III and one element from group V (for example gallium nitride GaN), subsequently called III-V compound, or comprising mainly at least one element from group II and one element from group VI (eg zinc oxide ZnO), hereinafter called compound II-VI.
- a semiconductor material mainly comprising at least one element from group III and one element from group V (for example gallium nitride GaN), subsequently called III-V compound, or comprising mainly at least one element from group II and one element from group VI (eg zinc oxide ZnO), hereinafter called compound II-VI.
- Such devices are, for example, described in French patent applications FR 2 995 729 and FR 2 997 558.
- a single quantum well is produced by interposing, between two layers of a first semiconductor material, for example a III-V compound, in particular GaN, respectively doped with P and N type, a layer of a second semiconductor material, for example an alloy of the III-V compound and of a third element, in particular InGaN, whose forbidden band is different from the first semiconductor material.
- a multiple quantum well structure comprises a stack of semiconductor layers forming an alternation of quantum wells and barrier layers.
- the wavelength of the electromagnetic radiation emitted by the active zone of the optoelectronic device depends in particular on the forbidden band of the second material forming the quantum well.
- the wavelength of the radiation emitted depends in particular on the atomic percentage of the third element, for example indium. In particular, the higher the atomic percentage of indium, the higher the wavelength.
- a disadvantage is that when the atomic percentage of indium exceeds a threshold, differences in lattice parameters are observed between the layers of GaN and InGaN from the quantum well that can lead to the formation of non-radiative defects in the active area, such as dislocations and/or alloy separation effects, which results in a significant decrease in the quantum efficiency of the active area of the device optoelectronics.
- the production of light-emitting diodes in III-V or II-VI compounds emitting in the red can therefore be difficult.
- an object of an embodiment is to overcome at least in part the drawbacks of the optoelectronic devices with light-emitting diodes described above.
- each light-emitting diode comprises a stack of layers of semiconductor materials based on III-V or II-VI compounds.
- the optoelectronic device comprises light-emitting diodes configured to emit light radiation in the red without using photoluminescent materials.
- Another object of an embodiment is the formation of three-dimensional light-emitting diodes of the axial type based on III-V or II-VI compounds, the active areas of which have an emission spectrum having the desired properties, in particular including a narrow band around the target transmit frequency.
- One embodiment provides an optoelectronic device comprising a matrix of axial light-emitting diodes, the light-emitting diodes each comprising an active zone configured to emit electromagnetic radiation, the emission spectrum of which comprises a maximum at a first wavelength, the matrix forming a photonic crystal configured to form a resonance peak amplifying the intensity of said electromagnetic radiation at at least a second wavelength different from the first wavelength.
- the device further comprises a first optical filter covering at least a first part of said matrix of diodes emitters, the first optical filter being configured to block said amplified radiation over a first range of wavelengths including the first wavelength and to pass said amplified radiation over a second range of wavelengths including the second wavelength 'wave.
- the emission spectrum of the active zone has energy at the second wavelength.
- the photonic crystal is configured to form a resonance peak amplifying the intensity of said electromagnetic radiation at at least a third wavelength different from the first and second wavelengths.
- the emission spectrum of the active zone has energy at the third wavelength.
- the device further comprises a second optical filter covering at least a second part of said matrix of light-emitting diodes, the second optical filter being configured to block said amplified radiation over a third range of wavelengths. wave comprising the first and second wavelengths and passing said amplified radiation over a fourth range of wavelengths comprising the third wavelength.
- the photonic crystal is configured to form a resonance peak amplifying the intensity of said electromagnetic radiation at at least a fourth wavelength different from the first, second and third wavelengths.
- the emission spectrum of the active zone has energy at the fourth wavelength.
- the device further comprises a third optical filter covering at least a third part of said matrix of light-emitting diodes, the third optical filter being configured to block said amplified radiation over a fifth range of wavelengths. wave comprising the first, second, and third wavelengths and for passing said amplified radiation over a sixth range of wavelengths comprising the fourth wavelength.
- the device comprises a support on which the light-emitting diodes rest, each light-emitting diode comprising a stack of a first semiconductor portion resting on the support, of the active zone in contact with the first semiconductor portion and a second semiconductor portion in contact with the active area.
- the device comprises a reflective layer between the support and the first semiconductor portions of the light-emitting diodes.
- the reflective layer is made of metal.
- the second semiconductor portions of the light-emitting diodes are covered with a conductive layer and at least partially transparent to the radiation emitted by the light-emitting diodes.
- the light-emitting diodes are separated by an electrically insulating material.
- One embodiment also provides a method for manufacturing an optoelectronic device comprising a matrix of axial light-emitting diodes, the light-emitting diodes each comprising an active zone configured to emit electromagnetic radiation, the emission spectrum of which comprises a maximum at a first wavelength, the matrix forming a photonic crystal configured to form a resonance peak amplifying the intensity of the electromagnetic radiation by the light-emitting diodes at at least a second wavelength different from the first wavelength.
- the formation of the light-emitting diodes of the matrix comprises the following steps:
- the method comprises a step of removing the substrate.
- Figure 1 is a sectional view, partial and schematic, of an embodiment of an optoelectronic device comprising light-emitting diodes;
- Figure 2 is a perspective view, partial and schematic, of the optoelectronic device shown in Figure 1;
- FIG. 3 schematically represents an example of arrangement of the light-emitting diodes of the optoelectronic device represented in FIG. 1;
- FIG. 4 schematically represents another example of arrangement of the light-emitting diodes of the optoelectronic device represented in FIG. 1;
- FIG. 5 schematically represents curves of evolution of light intensities of the radiation emitted by the optoelectronic device of FIG. 1 illustrating a configuration at one resonance;
- FIG. 6 schematically represents light intensity evolution curves illustrating a configuration with two resonances
- FIG. 7 schematically represents curves of evolution of light intensities illustrating a configuration with three resonances
- FIG. 8 illustrates a method for selecting the radiation emitted in a configuration with two resonances
- FIG. 9 illustrates a method for selecting the radiation emitted in a configuration with three resonances
- FIG. 10A illustrates a step of an embodiment of a method of manufacturing the optoelectronic device represented in FIG. 1;
- FIG. 10B illustrates another step in the manufacturing process
- FIG. 10C illustrates another step in the manufacturing process
- FIG. 10D illustrates another step in the manufacturing process
- FIG. 10E illustrates another step in the manufacturing process
- FIG. 10F illustrates another step in the manufacturing process
- FIG. 10G illustrates another step in the manufacturing process
- FIG. 11 illustrates a step of another embodiment of a method for manufacturing the optoelectronic device represented in FIG. 1;
- FIG. 12 is a grayscale map of the light intensity emitted at a first wavelength by a light-emitting diode of a photonic crystal of the optoelectronic device as a function of the pitch of the photonic crystal and the diameter of the light emitting diode ;
- FIG. 13 is a grayscale map of the light intensity emitted at a second wavelength by a light-emitting diode of a photonic crystal of the optoelectronic device as a function of the pitch of the photonic crystal and the diameter of the light emitting diode ;
- FIG. 14 is a map in grayscale of the light intensity emitted at a third wavelength by a light-emitting diode of a photonic crystal of the optoelectronic device as a function of the pitch of the photonic crystal and the diameter of the light emitting diode ;
- FIG. 15 represents a curve of evolution of the luminous intensity of the light-emitting diodes in function of the wavelength measured during a first test.
- FIG. 16 represents a curve of evolution of the light intensity of the light-emitting diodes as a function of the wavelength measured during a second test.
- the expressions “about”, “approximately”, “substantially”, and “of the order of” mean to within 10%, preferably within 5%.
- the terms “insulator” and “conductor” mean respectively “electrically insulating” and “electrically conducting”.
- the internal transmittance of a layer corresponds to the ratio between the intensity of the radiation leaving the layer and the intensity of the radiation entering the layer.
- the absorption of the layer is equal to the difference between 1 and the internal transmittance.
- a layer is said to be transparent to radiation when the absorption of radiation through the layer is less than 60%.
- a layer is said to be radiation-absorbent when the absorption of radiation in the layer is greater than 60%.
- a radiation presents a spectrum of general "bell" shape, for example of Gaussian shape, having a maximum, one calls wavelength of the radiation, or central or main wavelength of the radiation, the wavelength at which the maximum of the spectrum is reached.
- the refractive index of a material corresponds to the refractive index of the material for the range of wavelengths of the radiation emitted by the optoelectronic device.
- the refractive index is considered to be substantially constant over the range of wavelengths of the useful radiation, for example equal to the average of the index of refraction over the range of wavelengths of the radiation emitted by the optoelectronic device
- axial light-emitting diode is meant a three-dimensional structure of elongated shape, for example cylindrical, in a preferred direction, of which at least two dimensions, called minor dimensions, are between 5 nm and 2.5 ⁇ m, preferably between 50 nm and 2.5 ⁇ m.
- the third dimension, called major dimension is greater than or equal to 1 times, preferably greater than or equal to 5 times and even more preferably greater than or equal to 10 times, the largest of the minor dimensions.
- the minor dimensions can be less than or equal to approximately 1 ⁇ m, preferably between 100 nm and 1 ⁇ m, more preferably between 100 nm and 800 nm.
- the height of each light-emitting diode can be greater than or equal to 500 nm, preferably between 1 ⁇ m and 50 ⁇ m.
- Figures 1 and 2 are respectively a side sectional view and a perspective view, partial and schematic, of an embodiment of an optoelectronic device 10 with light-emitting diodes.
- the optoelectronic device 10 comprises, from bottom to top in FIG. 1:
- each axial light-emitting diode comprising, from bottom to top in FIG. 1, a lower semiconductor portion 18, not shown in FIG. 2, in contact with electrode layer 14 , an active area 20, not shown in FIG. 2, in contact with the lower semiconductor portion 18, and an upper semiconductor portion 22, not shown in FIG. 2, in contact with the active area 20;
- Each light-emitting diode LED is said to be axial insofar as the active area 20 is in the extension of the lower semiconductor portion 18 and the upper semiconductor portion 22 is in the extension of the active area 20, the assembly comprising the portion lower semiconductor 18, the active zone 20, and the upper semiconductor portion 22 extending along an axis A, called the axis of the axial light-emitting diode.
- the axes A of the light-emitting diodes LED are parallel and orthogonal to the face 16.
- the support 12 can correspond to an electronic circuit.
- the electrode layer 14 can be metallic, for example silver, copper or zinc.
- the thickness of electrode layer 14 is sufficient for electrode layer 14 to form a mirror.
- the electrode layer 14 has a thickness greater than 100 nm.
- Electrode layer 14 may completely cover support 12.
- electrode layer 14 may be divided into separate portions to allow separate driving of groups of light emitting diodes from the array of light emitting diodes.
- face 16 may be reflective.
- the electrode layer 14 can then present a specular reflection.
- the electrode layer 14 can present a Lambertian reflection. To obtain a surface having a Lambertian reflection, one possibility is to create irregularities on a conductive surface.
- a texturing of the surface of the base can be carried out before the deposition of the metal layer so that the face 16 of the metal layer, once deposited, has reliefs.
- the second electrode layer 26 is conductive and transparent.
- the electrode layer 26 is a layer of transparent and conductive oxide (TCO), such as indium tin oxide (or ITO, acronym for Indium Tin Oxide), zinc oxide doped or not with aluminum or gallium, or graphene.
- TCO transparent and conductive oxide
- ITO Indium Tin Oxide
- the electrode layer 26 has a thickness comprised between 5 nm and 200 nm, preferably between 20 nm and 50 nm.
- the insulating layer 24 can be made of an inorganic material, for example silicon oxide or silicon nitride.
- the insulating layer 24 can be made of an organic material, for example an insulating polymer based on benzocyclobutene (BCB).
- Coating 28 may comprise an optical filter, or optical filters arranged next to each other, as will be described in more detail below.
- all light emitting diodes LED have the same height.
- the thickness of the insulating layer 24 is for example chosen equal to the height of the light-emitting diodes LED in such a way that the upper face of the insulating layer 24 is coplanar with the upper faces of the light-emitting diodes.
- the lower 18 and upper 22 semiconductor portions and the active areas 20 are, at least in part, made of a semiconductor material.
- the semiconductor material is chosen from the group comprising III-V compounds, II-VI compounds, and group IV semiconductors or compounds.
- group III elements include gallium (Ga), indium (In) or aluminum (Al).
- group IV elements include nitrogen (N), phosphorus (P), or arsenic (As).
- III-N compounds are GaN, AlN, InN, InGaN, AlGaN or AlInGaN.
- group II elements include group IIA elements including beryllium (Be) and magnesium (Mg) and group IIB elements including zinc (Zn), cadmium (Cd) and mercury ( Hg).
- group VI elements include group VIA elements, including oxygen (O) and tellurium (Te).
- compounds II-VI are ZnO, ZnMgO, CdZnO, CdZnMgO, CdHgTe, CdTe or HgTe.
- the elements in the compound III-V or II-VI can be combined with different mole fractions.
- Group IV semiconductor materials are silicon (Si), carbon (G), germanium (Ge), silicon carbide alloys (SiC), silicon-germanium alloys (SiGe) or carbide alloys of germanium (GeC).
- the lower 18 and upper 22 semiconductor portions may include a dopant.
- the dopant can be selected from the group comprising a group II P-type dopant, for example, magnesium (Mg), zinc (Zn), cadmium (Cd ) or mercury (Hg), a group IV P-type dopant, e.g. carbon (G) or a group IV N-type dopant, e.g. silicon (Si), germanium (Ge), selenium (Se), sulfur (S), terbium (Tb) or tin (Sn).
- the lower semiconductor portion 18 is made of P-doped GaN and the upper semiconductor portion 22 is made of N-doped GaN.
- the active area 20 may include containment means.
- the active zone 20 can comprise a single quantum well. It then comprises a semiconductor material different from the semiconductor material forming the lower 18 and upper 22 semiconductor portions. and having a band gap lower than that of the material forming the lower 18 and upper 22 semiconductor portions.
- the active zone 20 can comprise multiple quantum wells. It then comprises a stack of semiconductor layers forming an alternation of quantum wells and barrier layers.
- each light-emitting diode LED has the shape of a cylinder with a circular base with an axis A.
- each light-emitting diode LED can have the shape of a cylinder with an axis A with a polygonal base. , for example square, rectangular or hexagonal.
- each light-emitting diode LED has the shape of a cylinder with a hexagonal base.
- the height H of the light-emitting diode LED is called the sum of the height hl of the lower semiconductor portion 18, of the height h2 of the active zone 20, of the height h3 of the upper semiconductor portion 22, of the thickness the electrode layer 26, and the thickness of the coating 28.
- the light-emitting diodes LED are arranged to form a photonic crystal. Twelve light-emitting diodes LED are represented by way of example in FIG. 2. In practice, the matrix 15 can comprise between 7 and 100,000 light-emitting diodes LED.
- the light-emitting diodes LED of the matrix 15 are arranged in rows and columns (3 rows and 4 columns being represented by way of example in FIG. 2).
- the step 'a' of the matrix 15 is the distance between the axis of a light-emitting diode LED and the axis of a close light-emitting diode LED, of the same line or of an adjacent line.
- the pitch a is substantially constant. More precisely, the step a of the matrix is chosen in such a way that the matrix 15 forms a photonic crystal.
- the photonic crystal formed is for example a 2D photonic crystal.
- the properties of the photonic crystal formed by the matrix 15 are advantageously chosen so that the matrix 15 of the light-emitting diodes forms a resonant cavity in the plane perpendicular to the axis A and a resonant cavity along the axis A in particular to obtain a coupling and increase the selection effect.
- This allows the intensity of the radiation emitted by the set of light-emitting diodes LED of the matrix 15 by the emission face 30 to be amplified for certain wavelengths compared to a set of light-emitting diodes LED which would not form a photonic crystal.
- FIGS. 3 and 4 schematically represent examples of arrangements of the light-emitting diodes LED of the matrix 15.
- FIG. 3 illustrates a so-called square mesh arrangement
- FIG. 4 illustrates a so-called hexagonal mesh arrangement.
- Figures 3 and 4 each show three rows of four light emitting diodes LED.
- a light-emitting diode LED is located at each intersection of a row and a column, the rows being perpendicular to the columns.
- the diodes on a line are offset by half the pitch a with respect to the light-emitting diodes on the preceding line and the following line.
- each light emitting diode LED has a circular cross section of diameter D in a plane parallel to the face 16.
- the diameter D can be between 0.05 ⁇ m and 2 ⁇ m.
- the pitch a can be between 0.1 ⁇ m and 4 ⁇ m.
- the height H of the light-emitting diode LED is chosen so that each light-emitting diode LED forms a resonant cavity along the axis A at the desired central wavelength X of the radiation emitted by the optoelectronic device 10.
- the height H is chosen substantially proportional to k* (X/2) *nef f , neff being the effective refractive index of the light-emitting diode in the optical mode considered and k being a positive integer.
- the effective refractive index is for example defined in the work “Semiconductor Optoelectronic Devices: Introduction to Physics and Simulation” by Joachim Piprek.
- the height H can nevertheless be the same for all the light-emitting diodes. It can then be determined from the theoretical heights which would make it possible to obtain resonant cavities for the light-emitting diodes of each group, and is for example equal to the average of these theoretical heights.
- the properties of the photonic crystal, formed by the matrix 15 of light-emitting diodes LED are selected to increase the light intensity emitted by the matrix 15 of light-emitting diodes LED at at least one wavelength target.
- the active zone 20 of each light-emitting diode LED has an emission spectrum whose maximum is at a wavelength different from the target wavelength. However, the emission spectrum of the active area 20 overlaps the target wavelength, i.e. the energy of the emission spectrum of the active area 20 at the target wavelength n' is not zero.
- FIG. 5 schematically represents, as a function of the wavelength ⁇ , an evolution curve C1 (solid line) of the light intensity I emitted by the active zones 20 of the light-emitting diodes LED considered separately, an evolution curve C2 (in dashed lines) of the amplification factor due to the coupling with the photonic crystal and an evolution curve C3 (in dotted lines) of the light intensity emitted by the matrix 15 of light-emitting diodes.
- Curve C1 has a general "bell" shape and has a peak at a central wavelength ⁇ c .
- Curve C2 corresponds to a narrow resonance peak centered on a target wavelength ⁇ T1 .
- Curve C3 includes a peak S at the central wavelength ⁇ c and a peak P 1 at the target wavelength ⁇ T1 .
- the bandwidth of the curve C3 at mid-height for the peak S can be greater than the bandwidth of the curve C3 at mid-height for the peak Pi, for example by a factor of 2, in particular by a factor varying from 8 to 15, for example equal to 10.
- obtaining an optoelectronic device 10 emitting narrow-spectrum light radiation at the target wavelength ⁇ T1 can be obtained by filtering the radiation emitted by the matrix 15 of light-emitting diodes LED to block wavelengths below the target wavelength ⁇ T1 .
- This can be obtained by providing an optical filter in the coating 28.
- the blocked part of the spectrum of the radiation emitted by the matrix 15 of light-emitting diodes is hatched.
- the spectrum of the radiation emitted by the face emission 30 of the optoelectronic device 10 then mainly comprises the peak P 1 .
- an active zone 20 emitting radiation of maximum intensity at a central wavelength ⁇ c less than the target wavelength ⁇ T1 makes it possible to use an active zone 20 with improved quantum efficiency. This also makes it possible to obtain radiation at the target wavelength ⁇ T1 by using an active zone 20, emitting radiation of maximum intensity at the central wavelength ⁇ c , which is easier to manufacture, without having to use photoluminescent materials. Furthermore, the height h1 of the lower semiconductor portion 18 and the height h2 of the upper semiconductor portion 22 are advantageously determined so that the light intensity of the peak at the target wavelength ⁇ T1 is maximum.
- FIG. 6 is a figure similar to FIG. 5, except that the evolution curve C2 of the amplification factor due to the photonic crystal comprises two peaks narrow resonance waves centered respectively on the target wavelengths ⁇ T1 and ⁇ T2 .
- the curve C3 then comprises the peak S at the central wavelength ⁇ c , the peak P 1 at the target wavelength ⁇ T1 , and a peak P2 at the target wavelength ⁇ T2 .
- FIG. 7 is a figure similar to FIG. 5 except that the evolution curve C2 of the amplification factor due to the photonic crystal comprises three narrow resonance peaks centered respectively on the target wavelengths ⁇ T1 , ⁇ T2 , and ⁇ T3 .
- Curve C3 includes peak S at central wavelength ⁇ c , peak P 1 at target wavelength ⁇ T1 , peak P 2 at target wavelength ⁇ T2 and peak P 3 at the target wavelength ⁇ T3 , represented in FIG. 7 substantially equal to the central wavelength ⁇ c .
- FIGS. 8 and 9 illustrate the principle of filtering the radiation emitted by the matrix 15 of light-emitting diodes for the configurations with two resonance peaks and three resonance peaks respectively.
- obtaining an optoelectronic device emitting light radiation with a narrow spectrum centered on the target wavelength ⁇ T1 can be obtained by blocking the unwanted part of the spectrum d emission of light-emitting diodes.
- the blocked part of the spectrum of the radiation emitted by the matrix 15 of light-emitting diodes is hatched and only one of the resonance peaks is retained.
- the filtering of the radiation emitted by the matrix of light-emitting diodes can be achieved by any means.
- the filtering is obtained by covering the light-emitting diodes with a layer of a colored material.
- the filtering is obtained by covering the light-emitting diodes with an interference filter.
- the light-emitting diodes of the matrix of light-emitting diodes can be divided into first and second groups of light-emitting diodes.
- a first filtering is implemented for the light-emitting diodes of the first group to retain only the first resonance peak and a second filtering is implemented for the light-emitting diodes of the second group to retain only the second resonance peak.
- An optoelectronic device configured for the emission of a first radiation at a first target wavelength and of a second radiation at a second target wavelength can thus be obtained while the active areas of the light-emitting diodes and the matrices light-emitting diodes of the first and second groups have the same structure.
- the light-emitting diodes in an emission configuration comprising at least three resonance peaks, can be divided into first, second and third groups of light-emitting diodes.
- a first filtering is implemented for the light-emitting diodes of the first group to keep only the first resonance peak.
- a second filtering is implemented for the light-emitting diodes of the second group to retain only the second resonance peak.
- a third filtering is implemented for the light-emitting diodes of the third group to retain only the third resonance peak.
- An optoelectronic device configured to emit first radiation at a first target wavelength, second radiation at a second target wavelength, and third radiation at a third target wavelength can thus be obtained while the active areas of the light-emitting diodes and the matrices of the light-emitting diodes of the first, second, and third groups have the same structure. This notably allows the production of display sub-pixels for a display pixel of a screen for displaying a color image.
- the radiation after filtering of the first group of light-emitting diodes corresponds to blue light, that is to say radiation whose wavelength is in the range from 430 nm to 480 nm. n.
- the radiation after filtering of the second group of light-emitting diodes corresponds to green light, that is to say radiation whose wavelength is in the range from 510 nm to 570 nm.
- the radiation after filtering of the third group of light-emitting diodes corresponds to red light, that is to say radiation whose wavelength is in the range from 600 nm to 720 nm.
- active areas 20 having the same structure and the same composition can be used to manufacture optoelectronic devices capable of emitting radiation with narrow spectra at different target wavelengths.
- design of a new optoelectronic device can be made with the same structure, so that the initial steps of the manufacturing method at least until the manufacturing of the light-emitting diodes can be common for the manufacturing of different optoelectronic devices.
- FIGS. 10A to 10G are partial and schematic cross-sectional views of the structures obtained at successive stages of an embodiment of a method for manufacturing the optoelectronic device 10 shown in FIG.
- FIG. 10A illustrates the structure obtained after the formation steps described below.
- a seed layer 42 is formed on a substrate 40 .
- Light-emitting diodes LED are then formed from the seed layer 42 . More precisely, the light-emitting diodes LED are formed in such a way that the upper semiconductor portions 22 are in contact with the seed layer 42 .
- the seed layer 42 is made of a material which promotes the growth of the upper semiconductor portions 22 .
- the active area 20 is formed on the upper semiconductor portion 22 and the lower semiconductor portion 18 is formed on the active area 20 .
- the light-emitting diodes LED are located so as to form the matrix 15, that is to say to form rows and columns with the desired pitch of the matrix 15 . Only one line is partially shown in Figures 10A to 10G.
- a mask can be formed before the formation of the light-emitting diodes on the seed layer 42 so as to uncover only the parts of the seed layer 42 at the locations where the light-emitting diodes will be located.
- the seed layer 42 can be etched, before the formation of the light-emitting diodes, so as to form pads located at the locations where the light-emitting diodes will be formed.
- the process for growing light-emitting diodes LEDs can be a process of the type or a combination of processes of the chemical vapor phase deposition (CVD, English acronym for Chemical Vapor Deposition) or chemical vapor phase deposition with organometallic (MOCVD, acronym for Metal-Organic Chemical Vapor Deposition), also known as metal-organic vapor phase epitaxy (or MOVPE, acronym for Metal-Organic Vapor Phase Epitaxy).
- MOVPE metal-organic vapor phase epitaxy
- processes such as Molecular Beam Epitaxy (MBE), gas-source MBE (GSMBE), organometallic MBE (MOMBE), plasma-assisted MBE (PAMBE), Atomic Layer Epitaxy (ALE) or Hydride Vapor Phase Epitaxy (HVPE) can be used.
- electrochemical processes can be used, for example chemical bath deposition (CBD, acronym for Chemical Bath Deposition), hydrothermal processes, liquid aerosol pyrolysis or electrodeposition.
- CBD chemical
- the growth conditions of the light-emitting diodes LED are such that all the light-emitting diodes of the matrix 15 are formed at substantially the same speed.
- the heights of the lower 18 and upper 22 semiconductor portions and the height of the active zone 20 are substantially identical for all the light-emitting diodes of the matrix 15.
- the height of the upper semiconductor portion 22 is greater than the desired value h3. Indeed, it can be difficult to precisely control the height of the upper semiconductor portion 22 in particular because of the start of growth of the portion. top semiconductor 22 from seed layer 42 . Additionally, forming the semiconductor material directly on the seed layer 42 can cause crystal defects in the semiconductor material just above the seed layer 42 . One may therefore want to remove part of the upper semiconductor portion 22 to obtain a constant height before forming the active area 20 .
- FIG. 10B illustrates the structure obtained after the formation of the layer 24 of filling material, for example an electrically insulating material, for example silicon oxide.
- Layer 24 is for example formed by depositing a layer of filler material on the structure represented in FIG. 10A, the layer having a thickness greater than the height of the light-emitting diodes LED. The layer of filling material is then partially removed so as to be planarized to uncover the upper faces of the lower semiconductor portions 18 . The upper face of layer 24 is then substantially coplanar with the upper face of each lower semiconductor portion 18 .
- the method can comprise an etching step during which the lower semiconductor portions 18 are partially etched.
- the filling material is chosen in such a way that the photonic crystal formed by the matrix 15 has the desired properties, that is to say that it selectively improves in wavelength the intensity of the radiation emitted by LED light-emitting diodes.
- FIG. 10C illustrates the structure obtained after depositing the electrode layer 14 on the structure obtained in the previous step.
- FIG. 10D illustrates the structure obtained after fixing layer 14 to support 12, for example by metal-metal bonding, by thermocompression or by brazing with the use of a eutectic on the side of support 12.
- FIG. 10E illustrates the structure obtained after the removal of the substrate 40 and of the seed layer 42.
- the layer 24 and the upper semiconductor portions 22 are etched in such a way that the height of each upper semiconductor portion 22 has the desired h3 value. This step makes it possible, advantageously, to control exactly the height of the light-emitting diodes and to remove the parts of the upper semiconductor portions 22 which may have crystalline defects.
- FIG. 10F illustrates the structure obtained after deposition of electrode layer 26.
- FIG. 10G illustrates the structure obtained after the formation of at least one optical filter on all or part of the structure represented in FIG. 10E.
- first, second and third optical filters F R , F G , F B have been shown, placed respectively on first, second and third groups of LED light-emitting diodes.
- FIG. 11 illustrates a variant of the method for manufacturing the optoelectronic device represented in FIG. 1, in which a step of partial etching of the free end of each upper semiconductor portion 22 of the light-emitting diodes LED is implemented before the formation of the electrode layer 26.
- the partial etching step may include the formation of inclined flanks 44 at the free end of the upper semiconductor portions 22. This makes it possible to slightly modify the properties of the photonic crystal. This therefore makes it possible to finely modify the position of the resonance peaks of the amplification due to the photonic crystal.
- the lower semiconductor portion 18 was made of p-type doped GaN.
- the upper semiconductor portion 22 was made of n-type doped GaN.
- upper 18 and 22 was between 2.4 and 2.5.
- the active area 20 corresponded to a layer of InGaN.
- the height h2 of the active zone 20 was equal to 40 nm.
- Electrode layer 14 was aluminum.
- the insulating layer 24 was made of BGB-based polymer.
- the refractive index of insulating layer 24 was between 1.45 and 1.56.
- a specular reflection on face 16 was considered.
- the height of the lower 18 and upper 22 semiconductor portions is not a determining parameter insofar as this does not substantially modify the position of the resonance peaks, even if this has an impact on the intensity of these resonance peaks.
- Figures 12, 13, and 14 are maps in gray levels of the light intensity of the radiation emitted in a direction inclined by 5 degrees with respect to a direction orthogonal to the emission face 30 respectively to a first , second, and third wavelength of the array 15 of light-emitting diodes LED as a function of the pitch 'a' of the photonic crystal and the diameter 'D' of each light-emitting diode.
- the first wavelength was 450 nm (blue color)
- the second wavelength was 530 nm (green color)
- the third wavelength was 630 nm (red color).
- Each of the gray level maps comprises lighter areas which correspond to resonance peaks. Such areas with resonance peaks are indicated, schematically, by contours B in solid lines in FIG. 12, by contours G in dotted lines in FIG. 13 and by contours R in dashed lines in FIG. 14.
- the contours B of FIG. 12 have been superimposed on the contours G.
- the contours B of figure 12 and the contours G of figure 13 have been superimposed on the contours R.
- the emission spectrum of the matrix 15 of light-emitting diodes LED obtained without filtering, has at least one resonance peak at the wavelength of 450 nm, a resonance peak at the wavelength of 530 nm, and a resonance peak at the wavelength of 630 nm.
- the light-emitting diodes had a hexagonal base. Approximately, it was considered that the simulations carried out for light-emitting diodes with a circular base with a given radius are equivalent to simulations for which the light-emitting diodes would be with a hexagonal base, with a circle circumscribing the hexagonal cross-section having a radius equal to 1.1 times the given radius.
- the lower 18 and upper 22 semiconductor portions and the active areas 20 of all the photodiodes were produced simultaneously by MOCVD.
- a first test was carried out with the following parameters: height H equal to approximately 1 ⁇ m, pitch 'a' of the photonic crystal equal to 400 nm, and diameter of the circle circumscribed at the hexagonal base of the light-emitting diodes of approximately 270 nm +/- 25 nm. Considering a corrected diameter of about 297 nm on the simulation of figure 14, a resonance is expected at the wavelength of 630 nm.
- FIG. 15 represents an evolution curve CR of the light intensity I, in arbitrary units, of the matrix 15 of light-emitting diodes as a function of the wavelength X for the first test. An intensity peak is indeed obtained for a wavelength equal to about 644 nm.
- a second test was carried out with the same basic dimensions as the first test, with epitaxial growth conditions for the formation of the active zones (20) which were modified so as to slightly reduce the overall mean diameter of each light emitting diode to enter the contours R, G, and B on the simulation of figure 14.
- the modified parameters were the thickness of the quantum barrier of the active zone which was increased, the flow In/III which has been increased and the temperature which has been increased.
- FIG. 16 represents a CRGB evolution curve of the light intensity I, in arbitrary units, of the matrix 15 of light-emitting diodes as a function of the wavelength for the second test. Three resonance peaks are well obtained respectively at wavelengths of 450 nm, 590 nm, and 700 nm.
- the coating 28 described previously can comprise additional layers other than an optical filter or optical filters.
- the coating 28 can comprise an anti-reflection layer, a protective layer, etc.
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Abstract
Description
Claims
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JP2023537133A JP2023554093A (ja) | 2020-12-17 | 2021-12-02 | アキシャル型3次元ダイオードを有する光電子デバイス |
CN202180085768.1A CN116783718A (zh) | 2020-12-17 | 2021-12-02 | 具有轴向型三维二极管的光电子器件 |
EP21823876.4A EP4264682A1 (fr) | 2020-12-17 | 2021-12-02 | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
US18/267,074 US20240063191A1 (en) | 2020-12-17 | 2021-12-02 | Optoelectronic device with axial-type three-dimensional light-emitting diodes |
KR1020237021259A KR20230119657A (ko) | 2020-12-17 | 2021-12-02 | 축형 3차원 다이오드를 이용한 광전자 소자 |
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FR2013514A FR3118291B1 (fr) | 2020-12-17 | 2020-12-17 | Dispositif optoélectronique à diodes électroluminescentes tridimensionnelles de type axial |
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2020
- 2020-12-17 FR FR2013514A patent/FR3118291B1/fr active Active
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- 2021-12-02 JP JP2023537133A patent/JP2023554093A/ja active Pending
- 2021-12-02 KR KR1020237021259A patent/KR20230119657A/ko unknown
- 2021-12-02 US US18/267,074 patent/US20240063191A1/en active Pending
- 2021-12-02 CN CN202180085768.1A patent/CN116783718A/zh active Pending
- 2021-12-02 EP EP21823876.4A patent/EP4264682A1/fr active Pending
- 2021-12-02 WO PCT/EP2021/083863 patent/WO2022128485A1/fr active Application Filing
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TW202243278A (zh) | 2022-11-01 |
JP2023554093A (ja) | 2023-12-26 |
US20240063191A1 (en) | 2024-02-22 |
CN116783718A (zh) | 2023-09-19 |
EP4264682A1 (fr) | 2023-10-25 |
KR20230119657A (ko) | 2023-08-16 |
FR3118291B1 (fr) | 2023-04-14 |
FR3118291A1 (fr) | 2022-06-24 |
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