CN103531441B - 基于分叉纳米线的多端量子调控器件的制备方法 - Google Patents
基于分叉纳米线的多端量子调控器件的制备方法 Download PDFInfo
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- CN103531441B CN103531441B CN201310503797.2A CN201310503797A CN103531441B CN 103531441 B CN103531441 B CN 103531441B CN 201310503797 A CN201310503797 A CN 201310503797A CN 103531441 B CN103531441 B CN 103531441B
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- 239000002096 quantum dot Substances 0.000 claims abstract description 35
- 230000012010 growth Effects 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims abstract description 25
- 229910000673 Indium arsenide Inorganic materials 0.000 claims abstract description 21
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 21
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- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 11
- 238000006555 catalytic reaction Methods 0.000 claims abstract description 10
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 9
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- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- 239000011241 protective layer Substances 0.000 claims abstract description 6
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
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- 239000003153 chemical reaction reagent Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229960002415 trichloroethylene Drugs 0.000 claims 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims 1
- 238000011160 research Methods 0.000 description 7
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- 229910052785 arsenic Inorganic materials 0.000 description 3
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- 238000013461 design Methods 0.000 description 2
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical class ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
Abstract
Description
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CN201310503797.2A CN103531441B (zh) | 2013-10-23 | 2013-10-23 | 基于分叉纳米线的多端量子调控器件的制备方法 |
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CN201310503797.2A CN103531441B (zh) | 2013-10-23 | 2013-10-23 | 基于分叉纳米线的多端量子调控器件的制备方法 |
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CN103531441A CN103531441A (zh) | 2014-01-22 |
CN103531441B true CN103531441B (zh) | 2016-05-04 |
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CN201310503797.2A Active CN103531441B (zh) | 2013-10-23 | 2013-10-23 | 基于分叉纳米线的多端量子调控器件的制备方法 |
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Families Citing this family (1)
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CN109962010B (zh) * | 2018-11-08 | 2022-05-27 | 中国科学院半导体研究所 | 圆晶级大面积半导体纳米片及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103165418A (zh) * | 2013-03-13 | 2013-06-19 | 中国科学院半导体研究所 | 在GaAs纳米线侧壁生长同质量子结构的MBE方法 |
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KR101102098B1 (ko) * | 2005-11-07 | 2012-01-02 | 삼성전자주식회사 | 가지형 나노 와이어의 제조방법 |
GB201021112D0 (en) * | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
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Patent Citations (1)
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CN103165418A (zh) * | 2013-03-13 | 2013-06-19 | 中国科学院半导体研究所 | 在GaAs纳米线侧壁生长同质量子结构的MBE方法 |
Non-Patent Citations (1)
Title |
---|
"Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire";Ying Yu, et al.;《NANO LETTERS》;20130306;第13卷;PP1399-1404 * |
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Inventor after: Yu Ying Inventor after: He Zhenhong Inventor after: Niu Zhichuan Inventor after: Ni Haiqiao Inventor after: Shang Xiangjun Inventor after: Li Mifeng Inventor after: He Jifang Inventor after: Cha Guowei Inventor after: Xu Jianxing Inventor after: Wang Lijuan Inventor before: Yu Ying Inventor before: Niu Zhichuan Inventor before: Li Mifeng Inventor before: He Jifang Inventor before: Cha Guowei Inventor before: Xu Jianxing Inventor before: Shang Xiangjun Inventor before: Wang Lijuan Inventor before: Ni Haiqiao Inventor before: He Zhenhong |
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