MD151Y - Process for growth of GaAs epitaxial layers into a horizontal reactor - Google Patents
Process for growth of GaAs epitaxial layers into a horizontal reactor Download PDFInfo
- Publication number
- MD151Y MD151Y MDS20090001A MDS20090001A MD151Y MD 151 Y MD151 Y MD 151Y MD S20090001 A MDS20090001 A MD S20090001A MD S20090001 A MDS20090001 A MD S20090001A MD 151 Y MD151 Y MD 151Y
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- MD
- Moldova
- Prior art keywords
- epitaxial layers
- reactor
- growth
- horizontal reactor
- temperature
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 8
- 229910017009 AsCl3 Inorganic materials 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000007664 blowing Methods 0.000 claims abstract description 3
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 238000007789 sealing Methods 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 15
- 238000012423 maintenance Methods 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Invenţia se referă la procedeele de creştere a straturilor epitaxiale, în particular la un procedeu de creştere a straturilor epitaxiale GaAs într-un reactor orizontal. The invention relates to epitaxial layer growth processes, in particular to a process for growing GaAs epitaxial layers in a horizontal reactor.
Este cunoscut un procedeu de creştere a straturilor epitaxiale GaAs în fază gazoasă, la o concentraţie a componentelor (Ga-AsCl3) de 1013…1014 cm-3, în faza mobilă (H2) cu o mobilitate la temperatura azotului lichid de 1·105…2·105 cm2/V·s [1]. A process for growing GaAs epitaxial layers in the gas phase is known, at a concentration of components (Ga-AsCl3) of 1013…1014 cm-3, in the mobile phase (H2) with a mobility at liquid nitrogen temperature of 1·105…2·105 cm2/V·s [1].
Dezavantajul acestui procedeu constă în suprafaţa mică a zonei de depunere a stratului epitaxial, fapt ce limitează productivitatea procedeului. The disadvantage of this process is the small surface area of the epitaxial layer deposition area, which limits the productivity of the process.
Cea mai apropiată soluţie este procedeul de creştere a straturilor epitaxiale de arsenură de galiu la temperaturi joase în sistemul Ga-AsCl3-H2 [2]. Straturile epitaxiale GaAs au fost obţinute într-un reactor cu o lungime a zonei de depunere de 10…12 cm, la o temperatură de 650…710°C în zona de depunere şi un gradient de creştere a temperaturii de 2°C/cm, iar suporturile au fost aranjate sub un unghi de 70° faţă de fluxul de gaze. The closest solution is the process of growing epitaxial layers of gallium arsenide at low temperatures in the Ga-AsCl3-H2 system [2]. The epitaxial GaAs layers were obtained in a reactor with a deposition zone length of 10…12 cm, at a temperature of 650…710°C in the deposition zone and a temperature increase gradient of 2°C/cm, and the supports were arranged at an angle of 70° to the gas flow.
Dezavantajul acestui procedeu constă în faptul că nu permite obţinerea unor straturi epitaxiale cu aceiaşi grosime de-a lungul întregii zone de depunere. The disadvantage of this process is that it does not allow obtaining epitaxial layers with the same thickness along the entire deposition area.
Problema pe care o soluţionează invenţia constă în prepararea straturilor epitaxiale A3B5 (GaAs) de aceiaşi grosime în zona de depunere. The problem solved by the invention consists in preparing A3B5 (GaAs) epitaxial layers of the same thickness in the deposition area.
Procedeul, conform invenţiei, include amplasarea unui substrat pregătit şi a unei surse de galiu într-un reactor, ermetizarea reactorului şi suflarea lui cu hidrogen cu un debit de 1000 cm3/min timp de o oră, încălzirea sursei de galiu până la temperatura de 800°C, a zonei de depunere până la 715…740°C cu menţinerea unui gradient de creştere a temperaturii de 1,7…2,1°C/cm şi depunerea straturilor epitaxiale la o viteză lineară de 33…35 cm/min a fluxului de hidrogen cu vapori de Ga-AsCl3. The process, according to the invention, includes placing a prepared substrate and a gallium source in a reactor, sealing the reactor and blowing it with hydrogen at a flow rate of 1000 cm3/min for one hour, heating the gallium source to a temperature of 800°C, the deposition zone to 715…740°C while maintaining a temperature increase gradient of 1.7…2.1°C/cm and depositing epitaxial layers at a linear velocity of 33…35 cm/min of the hydrogen flow with Ga-AsCl3 vapor.
Rezultatul invenţiei constă în prepararea straturilor epitaxiale A3B5 (GaAs) de aceeaşi grosime de-a lungul zonei de depunere într-un reactor orizontal, ceea ce permite creşterea productivităţii lor. Acest lucru se datorează faptului că în zona de depunere a straturilor epitaxiale se stabileşte un gradient de creştere a temperaturii de 1,7…2,1°C/cm, o viteza liniară a fluxului de hidrogen şi a vaporilor de Ga-AsCl3 de 33…35 cm/min, care permit echilibrarea vitezelor de creştere a straturilor epitaxiale de-a lungul zonei de depunere. The result of the invention consists in the preparation of A3B5 (GaAs) epitaxial layers of the same thickness along the deposition zone in a horizontal reactor, which allows increasing their productivity. This is due to the fact that in the epitaxial layer deposition zone a temperature growth gradient of 1.7…2.1°C/cm is established, a linear velocity of the hydrogen flow and Ga-AsCl3 vapor of 33…35 cm/min, which allow balancing the growth rates of the epitaxial layers along the deposition zone.
Exemplu de realizare Example of implementation
Straturile epitaxiale au fost crescute într-un reactor orizontal la o presiune apropiată de cea atmosferică. În calitate de material pentru depunere au fost folosite - clorura de arseniu (AsCl3) şi galiul de puritate 99,999%, iar în calitate de gaz purtător - hidrogenul, dublu purificat prin filtre de paladiu de tip FTV-4. În calitate de substrat au fost folosite plachetele monocristaline de arsenură de galiu orientate în direcţia cristalografică (100) cu o dezorientare de (3…5)° în direcţia (110). The epitaxial layers were grown in a horizontal reactor at a pressure close to atmospheric. Arsenic chloride (AsCl3) and gallium of 99.999% purity were used as the deposition material, and hydrogen, doubly purified through palladium filters of type FTV-4, was used as the carrier gas. Single-crystalline gallium arsenide wafers oriented in the crystallographic direction (100) with a misorientation of (3…5)° in the direction (110) were used as the substrate.
Plachetele de GaAs se prelucrează cu toluen, alcool izopropilic şi cu soluţie compusă din H2O : H2O2 : NH4OH, luate într-un raport de 5:1:1, apoi se spală cu apă deionizată, se usucă în vapori de alcool izopropilic şi se amplasează într-un reactor orizontal pe o lungime de 20 cm. Reactorul se ermetizează şi se suflă cu hidrogen timp de o oră cu un debit de 1000 cm3/min. Apoi se stabilesc temperaturile de creştere, în zona sursei de galiu - 800°C şi în zona de depunere 715…740°C, cu menţinerea unui gradient de creştere a temperaturii de la 1,7…2,1°C/cm, după care se micşorează fluxul de hidrogen ce trece prin barbotorul cu AsCl3 până la viteza liniară de 33…35 cm/min şi se efectuează procesul de depunere a stratului epitaxial cu o grosime necesară. The GaAs wafers are processed with toluene, isopropyl alcohol and a solution composed of H2O: H2O2: NH4OH, taken in a ratio of 5:1:1, then washed with deionized water, dried in isopropyl alcohol vapors and placed in a horizontal reactor over a length of 20 cm. The reactor is hermetically sealed and blown with hydrogen for one hour with a flow rate of 1000 cm3/min. Then the growth temperatures are established, in the gallium source area - 800°C and in the deposition area 715…740°C, maintaining a temperature growth gradient of 1.7…2.1°C/cm, after which the hydrogen flow passing through the AsCl3 bubbler is reduced to a linear velocity of 33…35 cm/min and the epitaxial layer deposition process with a required thickness is carried out.
Straturile epitaxiale obţinute astfel posedă o grosime omogenă de-a lungul zonei de depunere, asigurând astfel o productivitate sporită la confecţionarea dispozitivelor optoelectronice. The epitaxial layers obtained in this way have a homogeneous thickness along the deposition area, thus ensuring increased productivity in the fabrication of optoelectronic devices.
1. Dilorenzo J. V. Vapor growth of epitaxial GaAs: a summary of parameters which influence the purity and morphology of epitaxial layers. J. Crystal Growth, 1972, vol. 17, p. 189…206. 1. Dilorenzo J. V. Vapor growth of epitaxial GaAs: a summary of parameters which influence the purity and morphology of epitaxial layers. J. Crystal Growth, 1972, vol. 17, p. 189...206.
2. Ботнарюк В.М. Исследование арсенидгаллиевых структур для силовых приборов полученных низкотемпературной эпитаксией в системе Ga-AsCl3-H2. Диссертация на соискание ученой степени кандидата физико-математических наук, 1986, Кишинёв, c. 93…94. 2. Botnaryuk V.M. Research of arsenide gallium structures for power devices obtained by low-temperature epitaxy in the Ga-AsCl3-H2 system. Диссертация на соискание ученой страница начидата физико-математических наук, 1986, Kishinev, c. 93...94.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20090001A MD151Z (en) | 2008-12-30 | 2008-12-30 | Process for growth of GaAs epitaxial layers into a horizontal reactor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20090001A MD151Z (en) | 2008-12-30 | 2008-12-30 | Process for growth of GaAs epitaxial layers into a horizontal reactor |
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| Publication Number | Publication Date |
|---|---|
| MD151Y true MD151Y (en) | 2010-02-26 |
| MD151Z MD151Z (en) | 2010-09-30 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4554B1 (en) * | 2017-10-18 | 2018-02-28 | Государственный Университет Молд0 | Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4280C1 (en) * | 2013-09-04 | 2014-10-31 | Государственный Университет Молд0 | pInP-nCdS structure growth method |
| MD972Z (en) * | 2015-02-19 | 2016-06-30 | Государственный Университет Молд0 | Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells |
| MD4510C1 (en) * | 2016-06-23 | 2018-03-31 | Государственный Университет Молд0 | Method for growth of n+-p-p+ InP structure for solar cells |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1118579A (en) * | 1967-04-21 | 1968-07-03 | Standard Telephones Cables Ltd | A method of and apparatus for growing an epitaxial layer of semiconductive material on a surface of a semiconductive substrate |
| JPS5635411A (en) * | 1979-08-31 | 1981-04-08 | Fujitsu Ltd | Epitaxial wafer of gallium arsenide and its manufacture |
| JPH04354325A (en) * | 1991-05-31 | 1992-12-08 | Nikko Kyodo Co Ltd | Epitaxial growth method for compound semiconductors |
| JPH04359509A (en) * | 1991-06-06 | 1992-12-11 | Sumitomo Electric Ind Ltd | Epitaxial growth method of ternary compound semiconductor |
| JPH0684803A (en) * | 1992-09-01 | 1994-03-25 | Toshiba Corp | Vapor phase epitaxial growth system |
| JPH06172084A (en) * | 1992-12-08 | 1994-06-21 | Sumitomo Electric Ind Ltd | Method for epitaxial growth of compound semiconductor and apparatus therefor |
| MD499G2 (en) * | 1993-12-30 | 1997-05-31 | Государственный Университет Молд0 | Process of epitaxial layer grouing AIII BV in chloride system |
| MD673G2 (en) * | 1994-05-24 | 1997-08-31 | Государственный Университет Молд0 | Process for InP layers production |
| MD627G2 (en) * | 1994-07-25 | 1997-06-30 | Государственный Университет Молд0 | The method of making epitaxy layers of phosphide indium from gaz phase |
| MD930G2 (en) * | 1997-04-09 | 1999-01-31 | Государственный Университет Молд0 | Process for obtaining semiconducter layer materials from the gas phase |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD4554B1 (en) * | 2017-10-18 | 2018-02-28 | Государственный Университет Молд0 | Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS |
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| Publication number | Publication date |
|---|---|
| MD151Z (en) | 2010-09-30 |
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