MD4510B1 - Method for growth of n+-p-p+ InP structure for solar cells - Google Patents

Method for growth of n+-p-p+ InP structure for solar cells

Info

Publication number
MD4510B1
MD4510B1 MDA20160074A MD20160074A MD4510B1 MD 4510 B1 MD4510 B1 MD 4510B1 MD A20160074 A MDA20160074 A MD A20160074A MD 20160074 A MD20160074 A MD 20160074A MD 4510 B1 MD4510 B1 MD 4510B1
Authority
MD
Moldova
Prior art keywords
growth
inp
solar cells
epitaxial layer
pinp
Prior art date
Application number
MDA20160074A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD4510C1 (en
Inventor
Василе БОТНАРЮК
Петру ГАШИН
Леонид ГОРЧАК
Андрей КОВАЛ
Борис ЧИНИК
Симион РАЕВСКИЙ
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MDA20160074A priority Critical patent/MD4510C1/en
Publication of MD4510B1 publication Critical patent/MD4510B1/en
Publication of MD4510C1 publication Critical patent/MD4510C1/en

Links

Abstract

The invention relates to semiconductor technology and can be used in solar radiation conversion devices.The method for growth of n+-p-p+ InP structure for solar cells comprises growth of epitaxial layer pInP on p+InP substrates with the crystallographic orientation (100), the disorientation of 3…5° toward (110) and the charge carrier concentration of 1…3·1018 cm-3, growth of epitaxial layer n+InP and deposition of ohmic contacts. The n+InP layer is grown after the gas etching of the reactor and the epitaxial layer pInP.
MDA20160074A 2016-06-23 2016-06-23 Method for growth of n+-p-p+ InP structure for solar cells MD4510C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20160074A MD4510C1 (en) 2016-06-23 2016-06-23 Method for growth of n+-p-p+ InP structure for solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20160074A MD4510C1 (en) 2016-06-23 2016-06-23 Method for growth of n+-p-p+ InP structure for solar cells

Publications (2)

Publication Number Publication Date
MD4510B1 true MD4510B1 (en) 2017-08-31
MD4510C1 MD4510C1 (en) 2018-03-31

Family

ID=59759578

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20160074A MD4510C1 (en) 2016-06-23 2016-06-23 Method for growth of n+-p-p+ InP structure for solar cells

Country Status (1)

Country Link
MD (1) MD4510C1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4554B1 (en) * 2017-10-18 2018-02-28 Государственный Университет Молд0 Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL129707C (en) * 1959-06-18
US3218205A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds
FR2092896A1 (en) * 1970-06-29 1972-01-28 North American Rockwell Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds
MD626G2 (en) * 1994-01-13 1997-06-30 Государственный Университет Молд0 Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining
MD673G2 (en) * 1994-05-24 1997-08-31 Государственный Университет Молд0 Process for InP layers production
JP2000223422A (en) * 1999-01-29 2000-08-11 Sumitomo Electric Ind Ltd Semiconductor epitaxial wafer, manufacture thereof, and semiconductor device
JP4374156B2 (en) * 2000-09-01 2009-12-02 日本碍子株式会社 III-V Group Nitride Film Manufacturing Apparatus and Manufacturing Method
JP5046182B2 (en) * 2007-04-19 2012-10-10 信越半導体株式会社 Method for producing compound semiconductor epitaxial wafer
MD151Z (en) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Process for growth of GaAs epitaxial layers into a horizontal reactor
UA54800U (en) * 2010-05-19 2010-11-25 Сычикова Яна Александровна METHOD FOR GETTING THE FILM ON POROUS LAYER SUBSTRATE InP
US11417788B2 (en) * 2010-11-19 2022-08-16 The Boeing Company Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells
MD4280C1 (en) * 2013-09-04 2014-10-31 Государственный Университет Молд0 pInP-nCdS structure growth method
MD972Z (en) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4554B1 (en) * 2017-10-18 2018-02-28 Государственный Университет Молд0 Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS

Also Published As

Publication number Publication date
MD4510C1 (en) 2018-03-31

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Legal Events

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FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees