MD4510B1 - Method for growth of n+-p-p+ InP structure for solar cells - Google Patents
Method for growth of n+-p-p+ InP structure for solar cellsInfo
- Publication number
- MD4510B1 MD4510B1 MDA20160074A MD20160074A MD4510B1 MD 4510 B1 MD4510 B1 MD 4510B1 MD A20160074 A MDA20160074 A MD A20160074A MD 20160074 A MD20160074 A MD 20160074A MD 4510 B1 MD4510 B1 MD 4510B1
- Authority
- MD
- Moldova
- Prior art keywords
- growth
- inp
- solar cells
- epitaxial layer
- pinp
- Prior art date
Links
Abstract
The invention relates to semiconductor technology and can be used in solar radiation conversion devices.The method for growth of n+-p-p+ InP structure for solar cells comprises growth of epitaxial layer pInP on p+InP substrates with the crystallographic orientation (100), the disorientation of 3…5° toward (110) and the charge carrier concentration of 1…3·1018 cm-3, growth of epitaxial layer n+InP and deposition of ohmic contacts. The n+InP layer is grown after the gas etching of the reactor and the epitaxial layer pInP.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20160074A MD4510C1 (en) | 2016-06-23 | 2016-06-23 | Method for growth of n+-p-p+ InP structure for solar cells |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20160074A MD4510C1 (en) | 2016-06-23 | 2016-06-23 | Method for growth of n+-p-p+ InP structure for solar cells |
Publications (2)
Publication Number | Publication Date |
---|---|
MD4510B1 true MD4510B1 (en) | 2017-08-31 |
MD4510C1 MD4510C1 (en) | 2018-03-31 |
Family
ID=59759578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20160074A MD4510C1 (en) | 2016-06-23 | 2016-06-23 | Method for growth of n+-p-p+ InP structure for solar cells |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD4510C1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD4554B1 (en) * | 2017-10-18 | 2018-02-28 | Государственный Университет Молд0 | Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL129707C (en) * | 1959-06-18 | |||
US3218205A (en) * | 1962-07-13 | 1965-11-16 | Monsanto Co | Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds |
FR2092896A1 (en) * | 1970-06-29 | 1972-01-28 | North American Rockwell | Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds |
MD626G2 (en) * | 1994-01-13 | 1997-06-30 | Государственный Университет Молд0 | Process for heterostructure P+ InP-PInP/CdS and P+GaAs-pGaAs/CdS obtaining |
MD673G2 (en) * | 1994-05-24 | 1997-08-31 | Государственный Университет Молд0 | Process for InP layers production |
JP2000223422A (en) * | 1999-01-29 | 2000-08-11 | Sumitomo Electric Ind Ltd | Semiconductor epitaxial wafer, manufacture thereof, and semiconductor device |
JP4374156B2 (en) * | 2000-09-01 | 2009-12-02 | 日本碍子株式会社 | III-V Group Nitride Film Manufacturing Apparatus and Manufacturing Method |
JP5046182B2 (en) * | 2007-04-19 | 2012-10-10 | 信越半導体株式会社 | Method for producing compound semiconductor epitaxial wafer |
MD151Z (en) * | 2008-12-30 | 2010-09-30 | Государственный Университет Молд0 | Process for growth of GaAs epitaxial layers into a horizontal reactor |
UA54800U (en) * | 2010-05-19 | 2010-11-25 | Сычикова Яна Александровна | METHOD FOR GETTING THE FILM ON POROUS LAYER SUBSTRATE InP |
US11417788B2 (en) * | 2010-11-19 | 2022-08-16 | The Boeing Company | Type-II high bandgap tunnel junctions of InP lattice constant for multijunction solar cells |
MD4280C1 (en) * | 2013-09-04 | 2014-10-31 | Государственный Университет Молд0 | pInP-nCdS structure growth method |
MD972Z (en) * | 2015-02-19 | 2016-06-30 | Государственный Университет Молд0 | Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells |
-
2016
- 2016-06-23 MD MDA20160074A patent/MD4510C1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD4554B1 (en) * | 2017-10-18 | 2018-02-28 | Государственный Университет Молд0 | Process for increasing the efficiency of photovoltaic cells based on p+InP-p-InP-n+CdS |
Also Published As
Publication number | Publication date |
---|---|
MD4510C1 (en) | 2018-03-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG4A | Patent for invention issued | ||
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |