FR2092896A1 - Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds - Google Patents

Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds

Info

Publication number
FR2092896A1
FR2092896A1 FR7024045A FR7024045A FR2092896A1 FR 2092896 A1 FR2092896 A1 FR 2092896A1 FR 7024045 A FR7024045 A FR 7024045A FR 7024045 A FR7024045 A FR 7024045A FR 2092896 A1 FR2092896 A1 FR 2092896A1
Authority
FR
France
Prior art keywords
decomposition
group
iii
cpds
epitaxial film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7024045A
Other languages
French (fr)
Other versions
FR2092896B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
North American Rockwell Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North American Rockwell Corp filed Critical North American Rockwell Corp
Priority to FR7024045A priority Critical patent/FR2092896A1/en
Publication of FR2092896A1 publication Critical patent/FR2092896A1/en
Application granted granted Critical
Publication of FR2092896B1 publication Critical patent/FR2092896B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides

Abstract

Epitaxial growth of III - V semiconductor cpds. on insulating substrates such as sapphire, spinel, chrysoberyl, gadolinium gallium garnet, beryllia, thoria, calcium or barium fluoride by decomposition of the Group III organo-alkyl cpd. and the Group V hydrides or their alkyl derivs. Specif. Gp. III components are Al, In, AlGa, AlIn, GaIn and AlGaIn and Group V components As, Sb, P. Deposition may also be carried out on semiconducting substrates esp. GaAs, GaP, GaSb, AlAs, AlP, AlSb, InAs, InP, InSb and their alloys. The substrate is heated to 650-800 degrees C on an R. F. heated chamber and the process is single stage giving fewer by-products than previous methods.
FR7024045A 1970-06-29 1970-06-29 Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds Granted FR2092896A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7024045A FR2092896A1 (en) 1970-06-29 1970-06-29 Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7024045A FR2092896A1 (en) 1970-06-29 1970-06-29 Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds

Publications (2)

Publication Number Publication Date
FR2092896A1 true FR2092896A1 (en) 1972-01-28
FR2092896B1 FR2092896B1 (en) 1974-05-24

Family

ID=9057981

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7024045A Granted FR2092896A1 (en) 1970-06-29 1970-06-29 Epitaxial film growth - of semiconducting material, by decomposition of organo metallic cpds

Country Status (1)

Country Link
FR (1) FR2092896A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2419585A1 (en) * 1978-03-07 1979-10-05 Thomson Csf PROCESS FOR OBTAINING IN THE GASEOUS PHASE OF AN EPITAXIAL LAYER OF INDIUM PHOSPHIDE, AND APPARATUS FOR APPLYING THIS PROCESS
US4247359A (en) * 1978-10-30 1981-01-27 Honeywell Inc. Preparation of epitaxial rare earth thin films
MD4510C1 (en) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Method for growth of n+-p-p+ InP structure for solar cells

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364084A (en) * 1959-06-18 1968-01-16 Monsanto Co Production of epitaxial films
FR1572873A (en) * 1967-07-26 1969-06-27

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364084A (en) * 1959-06-18 1968-01-16 Monsanto Co Production of epitaxial films
FR1572873A (en) * 1967-07-26 1969-06-27

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
(REVUE AMERICAINE:"JO *
*REVUE AMERICAINE"JOURNAL OF THE ELECTROCHEMICAL SOCIETY",VOLUME 116,NO.12,DECEMBRE 1969."THE USE OF METAL-ORGANICS IN THE PREPARATION OF SEMICONDUCTOR MATERIALS:I.EPITAXIAL GALLIUM-V COMPOUNDS H.M.MANASEVIT AND W.I.SIMPSON.PAGES 1725-1732.PAGES 1725,COLONNE 2,ALINEA 2-PAGE 1726,COLONNE 2,ALINEA 5 DEPOT EPITAXIAL DE GAAS,GAP,GAAS1-XPX,GAAS1-XSBX SUR UN SUBSTRAT ISOLANT MONOCRISTALLIN CHOISI PARMI AL 203,MGAL 204,BE0,TH02 AUSEMIISOLANT GAAS A PARTIR DES HYDRURES DES COMPOSANTS DU GROUPE V,DE TRIMETHYL OUTRIETHYLGALLIUM ET DE SUBSTANCES DOPANTES:LES HYDRURES ETANT INTRODUITS DANS L'ENCEINTEREACTIONNELLE AVANT LES DERIVES ALKYLES.) *
DE ALAS,ALP OU GAXAL1-XAS DEPOSEE PAR EPITAXIE A PARTIR D'UNE PHASE GAZEUSE CONTENANT DEL'ARSINE OU DE LA PHOSPHINE EN EXCES ET DU TRIMETHYLALUMINIUM OU UN MELANGE DETRIMETHYLALUMINIUM ET DE TRIMETHYLGALLIUM.CERTAINS DOPANTS PEUVENT ETRE AJOUTES A LA PHASEGAZEUSE VOIR FIGURE 1 . *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2419585A1 (en) * 1978-03-07 1979-10-05 Thomson Csf PROCESS FOR OBTAINING IN THE GASEOUS PHASE OF AN EPITAXIAL LAYER OF INDIUM PHOSPHIDE, AND APPARATUS FOR APPLYING THIS PROCESS
US4247359A (en) * 1978-10-30 1981-01-27 Honeywell Inc. Preparation of epitaxial rare earth thin films
MD4510C1 (en) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Method for growth of n+-p-p+ InP structure for solar cells

Also Published As

Publication number Publication date
FR2092896B1 (en) 1974-05-24

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