CN103779397A - InAlN/InGaN heterojunction material structure and growth method thereof - Google Patents
InAlN/InGaN heterojunction material structure and growth method thereof Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000001257 hydrogen Substances 0.000 claims abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 58
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 40
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 21
- 229910052753 mercury Inorganic materials 0.000 claims description 21
- 229910021529 ammonia Inorganic materials 0.000 claims description 20
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 14
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 14
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 238000003780 insertion Methods 0.000 abstract 2
- 230000037431 insertion Effects 0.000 abstract 2
- 230000006911 nucleation Effects 0.000 abstract 2
- 238000010899 nucleation Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- -1 InP compound Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
The invention discloses an InAlN/InGaN heterojunction material structure and a growth method thereof. According to the structure, a GaN nucleation layer, a GaN buffer layer, an InxGa1-xN channel layer, an AlN protection layer, an AIN insertion layer and an InyAl1-yN barrier layer successively grow on a substrate, wherein 0<x<0.5 and 0<y<0.3. The growth method comprises the steps that 1) the substrate is selected and surface pretreatment is carried out on the substrate in a hydrogen atmosphere; and 2) the GaN nucleation layer, the GaN buffer layer, the InxGa1-xN channel layer, the AlN protection layer, the AIN insertion layer and the InyAl1-yN barrier layer successively grow on the substrate. According to the invention, the electrical properties of the InAlN/InGaN heterojunction material are great, and the growth method is simple, easy and reproducible.
Description
Technical field
What the present invention relates to is a kind of InAlN/InGaN heterojunction material structure and growing method thereof, belongs to semiconductor device production field.
Background technology
The research of III group nitride material is forward position and the focus of current global semiconductor research with application, it is the novel semiconductor material of development microelectronic component, opto-electronic device, and together with the semi-conducting material such as SiC, diamond, being described as is the third generation semi-conducting material after first generation Ge, Si semi-conducting material, second generation GaAs, InP compound semiconductor materials.It has character and the strong Radiation hardness such as wide direct band gap, strong atomic bond, high thermal conductivity, chemical stability be good, has wide prospect in photoelectron, high temperature high power device and high-frequency microwave device application aspect.
Traditional GaN base power device is to adopt AlGaN/GaN heterojunction material to make, compared with AlGaN/GaN, InAlN/InGaN heterogeneous interface difference in band gap is larger, will produce higher two-dimensional electron gas, meanwhile, InGaN raceway groove is compared with GaN raceway groove, and electron effective mass is less, be expected to obtain higher electron mobility, be very beneficial for the development of high power device.Shown in Fig. 1, InAlN/InGaN heterojunction material structure comprises substrate 1, GaN nucleating layer 2, GaN resilient coating 3, InGaN channel layer 4, AlN protective layer 5, AIN insert layer 6 and InAlN barrier layer 7.
In order to improve electron mobility, the thin layer AlN that needs to grow between InGaN channel layer and InAlN barrier layer, reduces alloy scattering.InGaN channel layer can only be at low-temperature epitaxy (below 800 ℃), and in order to guarantee AlN insert layer crystal mass, AlN layer must be at high growth temperature (more than 1000 ℃), the growth of InGaN channel layer must be experienced a high-temperature annealing process after finishing like this, easily cause InGaN material breakdown, worsen crystal mass.
Summary of the invention
What the present invention proposed is a kind of InAlN/InGaN heterojunction material structure and growing method thereof.Its object is intended to solve the existing above-mentioned deficiency of prior art, makes InAlN/InGaN heterojunction material have that efficiency is higher, better quality.
Technical solution of the present invention is: a kind of InAlN/InGaN heterojunction material structure, its structure is included in following each layer that on substrate, grows successively: GaN nucleating layer, GaN resilient coating, In
xga
1-xn channel layer, AlN protective layer, AIN insert layer and In
yal
1-yn barrier layer, wherein 0 < x < 0.5,0 < y < 0.3.
Its growing method, comprises the following steps: 1) choose substrate and under hydrogen atmosphere, described substrate is carried out to high-temperature baking surface preparation, remove surface contamination, the processing time is 5 minutes; 2) growing GaN nucleating layer, GaN resilient coating, In successively on described substrate
xga
1-xn channel layer, AlN protective layer, AIN insert layer and In
yal
1-yn barrier layer, wherein 0 < x < 0.5,0 < y < 0.3.
Advantage of the present invention: the InAlN/InGaN heterojunction material room temperature two-dimensional electron gas mobility of preparation reaches 1020 cm
2v
-1s
-1, two-dimensional electron gas 1.8 × 10
13cm
-2, be very beneficial for the development of large electric current, large power semiconductor device, and this process repeatability is fabulous, meets commercial Application requirement.The inventive method is simple, with existing MOCVD(metal organic-matter chemical gaseous phase deposition) method growth AlGaN/GaN heterojunction material process compatible, and can not cause any pollution to MOCVD system.
Accompanying drawing explanation
Accompanying drawing 2 is InAlN/InGaN heterojunction material square resistance distribution maps.
Embodiment
A growing method for InAlN/InGaN heterojunction material, comprises the following steps: 1) choose substrate and under hydrogen atmosphere, described substrate is carried out to high-temperature baking surface preparation, remove surface contamination, the processing time is 5 minutes; 2) growing GaN nucleating layer, GaN resilient coating, In successively on described substrate
xga
1-xn channel layer, AlN protective layer, AIN insert layer and In
yal
1-yn barrier layer, wherein 0 < x < 0.5,0 < y < 0.3.
Described substrate is the Sapphire Substrate of (0001) face.
The growth temperature of described growing GaN nucleating layer is 520～560 ℃, and growth air pressure is 450 ~ 550 millimetress of mercury, and growth source is ammonia, trimethyl gallium, and growth thickness is 20～30 nm.
The growth temperature of described growing GaN resilient coating is 1000～1100 ℃, and growth air pressure is 200～300 millimetress of mercury, and growth source is ammonia, trimethyl gallium, and growth thickness is 2～3 μ m.
Described growth In
xga
1-xthe growth temperature of N channel layer is 750～800 ℃, and growth air pressure is 100 ~ 300 millimetress of mercury, and growth source is ammonia, trimethyl gallium and trimethyl indium, and growth thickness is 2～10 nm, 0 < x < 0.5.
The growth temperature of described growing AIN protective layer is 750～800 ℃, and growth air pressure is 50 to 150 millimetress of mercury, and growth source is ammonia, trimethyl aluminium, and growth thickness is 0.5 nm.
The growth temperature of described growing AIN insert layer is 1000～1100 ℃, and growth air pressure is 50～150 millimetress of mercury, and growth source is ammonia, trimethyl aluminium, and growth thickness is 1～2 nm.
Described growth In
yal
1-ythe growth temperature of N barrier layer is 750～800 ℃, and growth air pressure is 50 ~ 150 millimetress of mercury, and growth source is ammonia, trimethyl indium and trimethyl aluminium, and growth thickness is 3～20 nm, 0 < y < 0.3.
Embodiment 1:
Method at (0001) surface sapphire substrate epitaxial growth InAlN/InGaN heterojunction material comprises the following steps:
S1, use MOCVD equipment (19 × 2 " Thomas Swan Close Coupled Showerhead), choose the Sapphire Substrate of (0001) face, substrate is placed on the graphite base of SiC coating.
S2, system are warming up to 1100 ℃, and it is 100 millimetress of mercury that air pressure is set, at H
2under (flow 40 L/min) atmosphere, Sapphire Substrate is carried out to surface preparation, remove surface contamination, the processing time is 5 minutes.
S3, be cooled to 550 ℃, pass into ammonia (NH
3), trimethyl gallium (TMGa), growth thickness is the low temperature GaN nucleating layer of 25 nm, growth air pressure be 500 millimetress of mercury, use online reflectance test instrument monitoring low temperature GaN nucleating layer thickness.
S4, be warming up to 1050 ℃, pass into ammonia (NH
3), trimethyl gallium (TMGa), growth thickness is the high temperature GaN resilient coating of 2 μ m, growth air pressure be 200 millimetress of mercury.
S5, be cooled to 770 ℃, pass into ammonia (NH
3), trimethyl gallium (TMGa) and trimethyl indium (TMIn), growth thickness is the In of 10 nm
0.1ga
0.9n channel layer, growth air pressure is 200 millimetress of mercury.
770 ℃ of S6, maintenance growth temperatures, pass into ammonia (NH
3), trimethyl aluminium (TMAl), growth thickness is the low temperature AI N protective layer of 0.5 nm, growth air pressure be 100 millimetress of mercury.
S7, be warming up to 1050 ℃, pass into ammonia (NH
3), trimethyl aluminium (TMAl), growth thickness is the AlN insert layer of 2 nm, growth air pressure be 100 millimetress of mercury.
S8, be cooled to 770 ℃, pass into ammonia (NH
3), trimethyl indium (TMIn) and trimethyl aluminium (TMAl), growth thickness is 10 nm In
0.17al
0.83n barrier layer, growth air pressure is 100 millimetress of mercury.
S9, close growth source, cooling.
Utilize Lehighton 1500C noncontact sheet resistance tester test material square resistance Mapping distribute, as shown in Figure 2.Utilize vanderburg method by Bio-Rad 5900
+room temperature two-dimensional electron gas mobility and the concentration of Hall tester test material.
Embodiment 2:
As different from Example 1:
In S5 step, be cooled to 770 ℃, pass into ammonia (NH
3), trimethyl gallium (TMGa) and trimethyl indium (TMIn), growth thickness is the In of 10 nm
0.2ga
0.8n channel layer, growth air pressure is 200 millimetress of mercury.
Embodiment 3:
As different from Example 1:
In S8 step, be cooled to 770 ℃, pass into ammonia (NH
3), trimethyl indium (TMIn) and trimethyl aluminium (TMAl), growth thickness is 5 nm In
0.17al
0.83n barrier layer, growth air pressure is 100 millimetress of mercury.
Experimental data is summed up:
It should be noted that, above-described embodiment has described invention main points of the present invention in detail, those of ordinary skill in the art can according to above-described embodiment disclosed content the process conditions of above steps are simply selected or are optimized, for example change InGaN channel layer, InAlN barrier layer thickness, In component, or growth air pressure, temperature and the source flux of other steps.
As can be seen from above: Patent design of the present invention a kind of InAlN/InGaN heterojunction material structure; the thin layer AlN protective layer of growing immediately after InGaN channel layer growth finishes; InGaN channel layer is carried out to high annealing protection, prevented InGaN material breakdown.The inventive method is simple, with existing MOCVD method growth AlGaN/GaN heterojunction material process compatible, can not cause any pollution to MOCVD system.
Claims (9)
1.InAlN/InGaN heterojunction material structure, is characterized in that: be included in following each layer that on substrate, grows successively: GaN nucleating layer, GaN resilient coating, In
xga
1-xn channel layer, AlN protective layer, AIN insert layer and In
yal
1-yn barrier layer, wherein 0 < x < 0.5,0 < y < 0.3.
2. the growing method of a kind of InAlN/InGaN heterojunction material as claimed in claim 1, is characterized in that: the method comprises the following steps: 1) choose substrate and under hydrogen atmosphere, described substrate is carried out to high-temperature baking surface preparation; 2) growing GaN nucleating layer, GaN resilient coating, In successively on described substrate
xga
1-xn channel layer, AlN protective layer, AIN insert layer and In
yal
1-yn barrier layer, wherein 0 < x < 0.5,0 < y < 0.3.
3. the growing method of InAlN/InGaN heterojunction material according to claim 2, it is characterized in that: the growth temperature of described growing GaN nucleating layer is 520～560 ℃, growth air pressure is 450 ~ 550 millimetress of mercury, and growth source is ammonia, trimethyl gallium, and growth thickness is 20～30 nm.
4. the growing method of InAlN/InGaN heterojunction material according to claim 2, it is characterized in that: the growth temperature of described growing GaN resilient coating is 1000～1100 ℃, growth air pressure is 200～300 millimetress of mercury, and growth source is ammonia, trimethyl gallium, and growth thickness is 2～3 μ m.
5. the growing method of InAlN/InGaN heterojunction material according to claim 2, is characterized in that: described growth In
xga
1-xthe growth temperature of N channel layer is 750～800 ℃, and growth air pressure is 100 ~ 300 millimetress of mercury, and growth source is ammonia, trimethyl gallium and trimethyl indium, and growth thickness is 2～10 nm, 0 < x < 0.5.
6. the growing method of InAlN/InGaN heterojunction material according to claim 2; it is characterized in that: the growth temperature of described growing AIN protective layer is 750～800 ℃; growth air pressure is 50 to 150 millimetress of mercury, and growth source is ammonia, trimethyl aluminium, and growth thickness is 0.5 nm.
7. the growing method of InAlN/InGaN heterojunction material according to claim 2, it is characterized in that: the growth temperature of described growing AIN insert layer is 1000～1100 ℃, growth air pressure is 50～150 millimetress of mercury, and growth source is ammonia, trimethyl aluminium, and growth thickness is 1～2 nm.
8. the growing method of InAlN/InGaN heterojunction material according to claim 2, is characterized in that: described growth In
yal
1-ythe growth temperature of N barrier layer is 750～800 ℃, and growth air pressure is 50 ~ 150 millimetress of mercury, and growth source is ammonia, trimethyl indium and trimethyl aluminium, and growth thickness is 3～20 nm, 0 < y < 0.3.
9. the growing method of InAlN/InGaN heterojunction material according to claim 2, is characterized in that: the Sapphire Substrate that described substrate is (0001) face.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108940281A (en) * | 2018-08-03 | 2018-12-07 | 青岛理工大学 | A kind of novel nano catalysis material Ag2MoO4-WO3The preparation method of hetero-junctions |
| CN109301027A (en) * | 2018-08-20 | 2019-02-01 | 西安电子科技大学 | Radiation detector and preparation method thereof based on nonpolar InAlN/GaN heterojunction structure |
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| CN102931230A (en) * | 2012-11-19 | 2013-02-13 | 中国科学院半导体研究所 | Double-heterojunction gallium nitride based HEMT (High Electron Mobility Transistor) taking aluminum-gallium-nitrogen as high-resistance layer and manufacturing method thereof |
| CN102931229A (en) * | 2012-11-06 | 2013-02-13 | 中国电子科技集团公司第五十五研究所 | AlGaN/GaN/InGaN double hetero-junction material and production method thereof |
| US20130207078A1 (en) * | 2012-01-18 | 2013-08-15 | Kopin Corporation | InGaN-Based Double Heterostructure Field Effect Transistor and Method of Forming the Same |
-
2014
- 2014-01-02 CN CN201410000154.0A patent/CN103779397A/en active Pending
Patent Citations (3)
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| US20130207078A1 (en) * | 2012-01-18 | 2013-08-15 | Kopin Corporation | InGaN-Based Double Heterostructure Field Effect Transistor and Method of Forming the Same |
| CN102931229A (en) * | 2012-11-06 | 2013-02-13 | 中国电子科技集团公司第五十五研究所 | AlGaN/GaN/InGaN double hetero-junction material and production method thereof |
| CN102931230A (en) * | 2012-11-19 | 2013-02-13 | 中国科学院半导体研究所 | Double-heterojunction gallium nitride based HEMT (High Electron Mobility Transistor) taking aluminum-gallium-nitrogen as high-resistance layer and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108940281A (en) * | 2018-08-03 | 2018-12-07 | 青岛理工大学 | A kind of novel nano catalysis material Ag2MoO4-WO3The preparation method of hetero-junctions |
| CN108940281B (en) * | 2018-08-03 | 2020-12-18 | 青岛理工大学 | Novel nano photocatalytic material Ag2MoO4-WO3Method for preparing heterojunction |
| CN109301027A (en) * | 2018-08-20 | 2019-02-01 | 西安电子科技大学 | Radiation detector and preparation method thereof based on nonpolar InAlN/GaN heterojunction structure |
| CN109301027B (en) * | 2018-08-20 | 2020-09-15 | 西安电子科技大学 | Radiation detector based on nonpolar InAlN/GaN heterostructure and preparation method thereof |
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Application publication date: 20140507 |