CN208368514U - GaN base radio-frequency devices epitaxial structure based on Si substrate - Google Patents
GaN base radio-frequency devices epitaxial structure based on Si substrate Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 53
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 22
- 238000005036 potential barrier Methods 0.000 claims abstract description 18
- 238000000407 epitaxy Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 11
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000006731 degradation reaction Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 165
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 63
- 239000000463 material Substances 0.000 description 17
- 239000012535 impurity Substances 0.000 description 12
- 230000008859 change Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001595 flow curve Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 238000005260 corrosion Methods 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Abstract
The utility model discloses the GaN base radio-frequency devices epitaxial structures based on Si substrate.The epitaxial structure is made of the Si substrate, AlN nucleating layer, AlGaN buffer layer, GaN:Fe/GaN resistive formation, GaN superlattice layer, GaN channel layer, AlGaN potential barrier and the GaN cap that stack gradually from bottom to up；By intentional Fe2O3 doping GaN layer and unintentional doped gan layer, alternately connection forms GaN:Fe/GaN resistive formation；By low pressure/low V/III, than GaN layer and high pressure/high V/III, than GaN layer, periodically alternately connection forms GaN superlattice layer.The utility model epitaxial structure crystal quality is high, buffer layer concentration of background carriers is low, channel carrier confinement is good, leakage current is small, the device of preparation has high-breakdown-voltage, high current density, the electric leakage of low OFF state and excellent pinch-off behavior, and performance degradation is small under high temperature, high frequency, manufacturing cost is low.
Description
Technical field
The utility model relates to semiconductor devices, more particularly to a kind of GaN base radio-frequency devices extension based on Si substrate
Structure, the GaN base radio-frequency devices epitaxial structure can be used for being suitable for the fields such as high-frequency, high-power wireless communication, radar；Belong to
In microelectronics technology.
Background technique
With the development of modern weapons equipment and aerospace, nuclear energy, the communication technology, automotive electronics, Switching Power Supply, half-and-half
More stringent requirements are proposed for the performance of conductor device.As the Typical Representative of semiconductor material with wide forbidden band, GaN base material, which has, to be prohibited
Bandwidth is big, electronics saturation drift velocity is high, critical breakdown strength is high, thermal conductivity is high, stability is good, corrosion-resistant, anti-radiation etc.
Feature can be used for making high temperature, high frequency and high-power electronic device.In addition, GaN also has excellent characteristic electron, Ke Yihe
AlGaN forms the AlGaN/GaN heterojunction structure of modulation doping, which can obtain higher than 1500cm at room temperature2/ Vs's
Electron mobility, and up to 3 × 107The peak electron speed of cm/s and 2 × 107The saturated electrons speed of cm/s, and obtain ratio
The higher two-dimensional electron gas density of second generation compound semiconductor heterostructure is known as being the ideal for developing microwave power device
Material.Therefore, the high electron mobility transistor (HEMT) based on AlGaN/GaN hetero-junctions has in terms of microwave high power device
Extraordinary application prospect.
SiC and Si is the main substrate material of GaN base microwave power device.Wherein, SiC substrate material has lattice mismatch
Small, the features such as dislocation density is low, good heat conductivity, the GaN material crystal quality grown on sic substrates is high, electric leakage is low, together
When, due to SiC substrate good heat conductivity, the self-heating effect of the GaN base microwave power device of high power density can be effectively reduced.Cause
This, SiC is the main substrate material for making high frequency, high-power GaN base microwave power device.The main restriction of SiC substrate material
Factor is higher cost, and the GaN base microwave power based on SiC substrate is caused to can be only applied to Connectors for Active Phased Array Radar at present, defend
Magnitude military domain.
Compared to SiC substrate, Si substrate has much advantage, large scale (> 12 cun of Si in terms of low cost and big wafer preparation
Substrate technology of preparing is very mature, meanwhile, the GaN material based on Si substrate can realize large scale quantities with Si process compatible
It produces.Therefore, it in commercial fields such as telecommunication satellite, low power devices, the cable televisions of low cost, high production capacity demand, is served as a contrast based on Si
The GaN material at bottom has higher competitiveness.Currently, growing the main tired of smooth GaN base epitaxial material on large scale Si substrate
Difficulty is, due between GaN and Si substrate there are huge lattice mismatch (- 17% and thermal mismatching (116%, lead to silicon wafer warpage degree
Height, material homogeneity is poor, GaN crystal is of poor quality, so the high (leakage including dislocation and background impurities and then material of defect concentration
It is electric high, cause the integrity problem of device.
Utility model content
The purpose of the utility model is to overcome the defects of above-mentioned prior art, mention from the optimization angle of device vertical structure
A kind of GaN base radio-frequency devices epitaxial structure based on Si substrate out improves epitaxial material crystal quality and performance, reduces material leakage
Electricity reduces technology difficulty, improves the reliability of device.
The purpose of this utility model is realized at least through following technical solution.
A kind of GaN base radio-frequency devices epitaxial structure based on Si substrate, from bottom to up Si substrate, the AlN by stacking gradually
Nucleating layer, AlGaN buffer layer, GaN:Fe/GaN resistive formation, GaN superlattice layer, GaN channel layer, AlGaN potential barrier and GaN cap
Layer composition；Wherein, by intentional Fe2O3 doping GaN layer and unintentional doped gan layer, alternately connection forms GaN:Fe/GaN resistive formation；Institute
The thickness of the intentional Fe2O3 doping GaN layer and unintentional every layer of doped gan layer stated all is 100nm~200nm；GaN superlattice layer by
Than GaN layer and high pressure/high V/III, than GaN layer, periodically alternately connection forms low pressure/low V/III；The low pressure/low V/III
It is all 20~50nm than GaN layer and high pressure/thickness of the high V/III than every layer of GaN layer.
To further realize the utility model aim, it is preferable that the low pressure/low V/III is than GaN layer and high pressure/high
V/III is 3~5 periods than the repetition period of GaN layer.
Preferably, the repetition period of the intentional Fe2O3 doping GaN layer and unintentional doped gan layer is 3~5 periods,
The doping concentration of the Fe impurity of intentional Fe2O3 doping GaN layer is 1E19cm-3~1E20cm-3。
Preferably, three layers in total of the AlGaN buffer layer, wherein every layer of Al element molar content percentage from bottom to up
Than being sequentially reduced, and all in the range of 20~70%, thickness is successively increased, and all in the range of 200nm~800nm.
Preferably, the Si substrate is circle, diameter 6inch-10inch.
Preferably, the Si substrate, AlN nucleating layer, AlGaN buffer layer, GaN channel layer, AlGaN potential barrier and GaN
The thickness of cap layers is respectively 0.5-2mm, 0.2-1 μm, 600-2400nm, 100-500nm, 10-30nm and 2-5nm.
Compared with prior art, the utility model has the following advantages that and technical effect:
1) on the one hand the utility model inhibits material failure based on the GaN base radio-frequency devices epitaxial structure on Si substrate, separately
On the one hand film quality is improved, the extension prepared on large-sized Si substrate has crystal quality height, channel carrier confinement
The feature that property is good, leakage current is small.
2) the utility model is prepared using the epitaxial structure of utility model device high-breakdown-voltage, high current density, low
OFF state electric leakage, excellent pinch-off behavior, and performance degradation is small under high temperature.
3) the GaN base radio-frequency devices epitaxial structure manufacturing process based on Si substrate of the utility model is simple, reproducible,
It is applied suitable for high-frequency, high-power wireless communication, radar etc..
Detailed description of the invention
FIG. 1 to FIG. 8 is the preparation process of the GaN base radio-frequency devices epitaxial structure in the example of the utility model based on Si substrate
Schematic diagram.
Fig. 9 is the Cp of GaN:Fe/GaN resistive formation in the utility model embodiment 12The flow changing curve of Fe.
GaN superlattice layer pressure history figure in Figure 10 the utility model embodiment 1.
Figure 11 is the change curve of the V/III ratio of GaN superlattice layer in the utility model embodiment 1.
Figure 12 is the electric leakage curve of the epitaxial structure of the utility model and the source-drain electrode of prior art epitaxial structure；
It is shown in figure: Si substrate 1, AlN nucleating layer 2, the first AlGaN buffer layer 3, the 2nd AlGaN buffer layer 4, third
AlGaN buffer layer 5, GaN:Fe/GaN resistive formation 6, GaN superlattice layer 7, GaN channel layer 8, AlGaN potential barrier 9, GaN cap
10。
Specific embodiment
The specific implementation of the utility model is described further below in conjunction with attached drawing and example, but the reality of the utility model
Apply and protect it is without being limited thereto, if it is noted that below have not especially detailed description process or technological parameter, be this field
Technical staff can refer to prior art realization.
Referring to Fig. 8, a kind of GaN base high pressure HEMT device epitaxial structure based on Si substrate, under it is supreme include Si substrate 1,
AlN nucleating layer 2, the first AlGaN buffer layer 3, the 2nd AlGaN buffer layer 4, the 3rd AlGaN buffer layer 5, GaN:Fe/GaN high resistant
Layer 6, GaN superlattice layer 7, GaN channel layer 8, AlGaN potential barrier 9, GaN cap 10.Wherein, GaN:Fe/GaN resistive formation 6 by
Alternately connection forms for intentional Fe2O3 doping GaN layer and unintentional doped gan layer, and GaN superlattice layer 7 is by low pressure/low V/III ratio GaN
Layer and high pressure/high V/III alternating connection composition periodically than GaN layer.Low V/III is than i.e. low NH3Flow, high TMGa flow, instead
It, high V/III is than i.e. high NH3Flow, low TMGa flow.
The manufacturing method of the GaN base radio-frequency devices epitaxial structure based on Si substrate, includes the following steps:
1) Si substrate is put into equipment of metal organic chemical vapor deposition, Si substrate surface is moved back in the reaction chamber
Fire processing；
2) it is epitaxially grown on the substrate AlN nucleating layer；
3) epitaxial growth AlGaN buffer layer on the basis of AlN nucleating layer, totally three layers, the molar content hundred of Al element
Divide and successively decline, and all in the range of 20%~70%, thickness is successively increased, and all in the range of 200nm~800nm；
4) circulating repetition following steps 4a) and 4b) repeatedly, extension GaN:Fe/GaN high resistant on the basis of AlGaN buffer layer
Layer；
4a) with Cp2Fe grows intentional Fe2O3 doping GaN layer as Fe doped source, and the doping concentration of Fe impurity is 1E19cm-3
~1E20cm-3, with a thickness of 100nm~200nm；
4b) in intentional Fe2O3 doping GaN layer, it is not passed through Cp2Fe grows unintentional doped gan layer, with a thickness of 100nm~
200nm；
5) circulating repetition following steps 5a) and 5b) repeatedly, upper GaN superlattices are grown in GaN:Fe/GaN high resistivity layer epitaxy
Layer；
5a) with the growth conditions of low pressure and low V/III ratio, low pressure/low V/III is grown than GaN layer, growth pressure is
50Torr~100Torr, V/III ratio are less than 50, with a thickness of 20~50nm；
5b) with the growth conditions of high pressure and high V/III ratio, high pressure/high V/III is grown than GaN layer, growth pressure is
300Torr~400Torr, V/III ratio are greater than 110, with a thickness of 20~50nm:
6) epitaxial growth GaN channel layer；
7) epitaxial growth AlGaN potential barrier；
8) epitaxial growth GaN cap.
Preferably, the temperature of annealing described in step 1) is higher than 1100 degrees Celsius, and the time is greater than 10 minutes.
Preferably, AlN nucleating layer described in step 2) provides nucleation node for subsequent growth, and it is Celsius that temperature is higher than 1200
Degree.
Preferably, the molar content percentage of Al element is 20~30% in AlGaN potential barrier described in step 7).
Embodiment 1
Si substrate 1 is circle, diameter 8inch.Si substrate, AlN nucleating layer, GaN channel layer, AlGaN potential barrier and
The thickness of GaN cap is respectively 1mm, 0.5 μm, 300nm, 20nm and 3nm.
First AlGaN buffer layer 3, the 2nd AlGaN buffer layer 4 and three layers in total of the 3rd AlGaN buffer layer 5, wherein under
Supreme every layer of Al element molar content is sequentially reduced, and respectively 0.7,0.5 and 0.3, thickness successively increases, respectively
300nm, 500nm and 700nm.
By intentional Fe2O3 doping GaN layer and unintentional doped gan layer, alternately connection forms GaN:Fe/GaN resistive formation 6, deliberately
The thickness of Fe2O3 doping GaN layer and unintentional every layer of doped gan layer is respectively 100nm, and the period is 3 periods, intentional Fe2O3 doping GaN
The doping concentration of the Fe impurity of layer is 1E19cm-3。
GaN superlattice layer 7 by low pressure/low V/III for being grown under the conditions of low pressure and low V/III ratio than GaN layer and high pressure and
Than GaN layer, periodically alternately connection forms the high pressure/high V/III grown under the conditions of high V/III ratio, low pressure/low V/III ratio GaN
Layer and high pressure/thickness of the high V/III than every layer of GaN layer are respectively 25nm, and the period is 5 periods.
Such as FIG. 1 to FIG. 8, a kind of manufacturing method of the GaN base radio-frequency devices epitaxial structure based on Si substrate, including walk as follows
It is rapid:
Si substrate 1 is put into Metallo-Organic Chemical Vapor deposition (in MOCVD device, in the reaction chamber to Si by step 1
1 surface of substrate is made annealing treatment, and 1200 degrees Celsius of temperature, the time 15 minutes；Resulting structures such as Fig. 1.
Step 2,2 extension of AlN nucleating layer is on Si substrate 1；Resulting structures such as Fig. 2.
Step 3, the first AlGaN buffer layer 3, the 2nd AlGaN buffer layer 4, successively extension exists the 3rd AlGaN buffer layer 5
Above AlN nucleating layer 2, three layers altogether, Al element molar content successively declines, respectively value 0.7,0.5 and 0.3, single monolayer thick
Degree successively increases, and value is 300nm, 500nm and 700nm respectively；Resulting structures such as Fig. 3.
Step 4, circulating repetition following steps 4a) and 4b) totally 3 times, extension on the basis of the 3rd AlGaN buffer layer 5
GaN:Fe/GaN resistive formation 6, resulting structures such as Fig. 4.Fig. 9 is GaN:Fe/GaN resistive formation in the utility model embodiment 1
Cp2The flow changing curve of Fe.Cp2The flow of Fe is in cyclically-varying, and the doping concentration of Fe impurity is also in cyclically-varying.It is raw
When long intentional Fe2O3 doping GaN layer, it is passed through Cp2The resistance of Fe, intentional Fe2O3 doping GaN layer are high, when growing unintentional doped gan layer,
It is not passed through Cp2Fe, Cp2The flow of Fe is that the doping concentration of zero, Fe impurity is zero, and the crystal quality of unintentional doped gan layer is high.
The two alternating growth obtains the GaN:Fe/GaN resistive formation 6 of high electrical resistance and crystal quality.The Cp of the present embodiment2The flow of Fe
Change curve Fig. 9, can be by Cp in equipment2The mass flowmenter monitoring data of Fe obtains.
4a) with ferrocene (Cp2Fe it) is used as Fe doped source, grows intentional Fe2O3 doping GaN layer, the doping concentration of Fe impurity is
1E19cm-3, with a thickness of 100nm；
4b) in intentional Fe2O3 doping GaN layer, it is not passed through Cp2Fe grows unintentional doped gan layer, with a thickness of 100nm.
Step 5, circulating repetition following steps 5a) and 5b) 5 times, the GaN in 6 epitaxial growth of GaN:Fe/GaN resistive formation
Superlattice layer 7, resulting structures such as Fig. 5.Figure 10 and Figure 11 is the pressure of GaN superlattice layer and V/III ratio in the present embodiment 1
Change curve.Pressure and V/III ratio are in cyclically-varying, and when growing low pressure/low V/III than GaN layer, growth pressure is low, V/III
Than low, when growing high pressure/high V/III than GaN layer, growth pressure height, V/III are than high.It is super brilliant to obtain GaN for the two alternating growth
Compartment 7.Pressure history Figure 10 of the present embodiment can be obtained by pressure controller monitors data in equipment.The present embodiment
V/III change curve Figure 11 can be obtained by the mass flowmenter monitoring data of ammonia in equipment.
5a) with the growth conditions of low pressure and low V/III ratio, low pressure/low V/III is grown than GaN layer, growth pressure is
50Torr, V/III ratio are 50, with a thickness of 25nm；
5b) with the growth conditions of high pressure and high V/III ratio, high pressure/high V/III is grown than GaN layer, growth pressure is
300Torr, V/III 110, with a thickness of 25nm.
Step 6,8 extension of GaN channel layer is on GaN superlattice layer 7, with a thickness of 300nm；Resulting structures such as Fig. 6.
Step 7, for 9 extension of AlGaN potential barrier on GaN channel layer 8, Al element molar content is 25%, with a thickness of
25nm；Resulting structures such as Fig. 7.
Step 8,10 extension of GaN cap are a kind of base with a thickness of 3nm, resulting structures such as Fig. 8 in AlGaN potential barrier 9
In the GaN base high pressure HEMT device epitaxial structure of Si substrate.
After preparing electrode on sample described in embodiment 1, using the pass of Agilent B1505A source table test radio-frequency devices
State I-V curve, obtains the result of Figure 12.Abscissa is voltage in Figure 12, and unit V, ordinate is leakage current, unit A.
Solid line is the electric leakage flow curve of existing epitaxial structure, and dotted line is the electric leakage flow curve of the utility model epitaxial structure；It can from figure
See, relative to existing epitaxial structure, the sample breakdown voltage of the present embodiment is higher, is greater than 510V, higher than existing epitaxial structure by one
A 50V, meanwhile, OFF state electric leakage is smaller, is lower than 10-6A/mm, an order of magnitude lower than existing epitaxial structure, pinch-off behavior are more preferable.
Embodiment 2
Si substrate 1 is circle, diameter 8inch.Si substrate, AlN nucleating layer, GaN channel layer, AlGaN potential barrier and
The thickness of GaN cap is respectively 1mm, 0.5 μm, 300nm, 30nm and 5nm.
First AlGaN buffer layer 3, the 2nd AlGaN buffer layer 4, three layers in total of the 3rd AlGaN buffer layer 5, wherein from down toward
Upper every layer of Al element molar content is sequentially reduced, and respectively 0.7,0.5 and 0.3, thickness successively increases, respectively 300nm,
500nm and 700nm.
By intentional Fe2O3 doping GaN layer and unintentional doped gan layer, alternately connection forms GaN:Fe/GaN resistive formation 6, and every layer
With a thickness of 150nm, the period is 5 periods, and the doping concentration of the Fe impurity of intentional Fe2O3 doping GaN layer is 5E19cm-3。
GaN superlattice layer 7 by low pressure/low V/III for being grown under the conditions of low pressure and low V/III ratio than GaN layer and high pressure and
High pressure/high the V/III grown under the conditions of high V/III ratio alternately connection composition periodically than GaN layer, every layer with a thickness of 25nm,
Period is 5 periods.
Such as FIG. 1 to FIG. 8, a kind of manufacturing method of the GaN base radio-frequency devices epitaxial structure based on Si substrate, including walk as follows
It is rapid:
Si substrate is put into Metallo-Organic Chemical Vapor deposition (MOCVD) equipment, in the reaction chamber to Si by step 1
Substrate surface is made annealing treatment, and 1200 degrees Celsius of temperature, the time 15 minutes；
Step 2,2 extension of AlN nucleating layer is on Si substrate 1；
Step 3, AlGaN buffer layer 3-5 extension is on AlN nucleating layer 2, three layers altogether, Al element molar content according to
Secondary decline, difference value 0.7,0.5 and 0.3, thickness in monolayer successively increases, and value is 300nm, 500nm and 700nm respectively；
Step 4, circulating repetition following steps 4a) and 4b) 5 times, extension GaN:Fe/ on the basis of AlGaN buffer layer 3-5
GaN resistive formation 6.
4a) with ferrocene Cp2Fe grows intentional iron Fe doped gan layer as Fe doped source, and the doping concentration of Fe impurity is
5E19cm-3, with a thickness of 150nm；
4b) in intentional iron Fe doped gan layer, it is not passed through Cp2Fe grows unintentional doped gan layer, with a thickness of 150nm.
Step 5, circulating repetition following steps 5a) and 5b) 5 times, GaN is super in 6 epitaxial growth of GaN:Fe/GaN resistive formation
Lattice layer 7.
5a) with the growth conditions of low pressure and low V/III ratio, low pressure/low V/III is grown than GaN layer, growth pressure is
50Torr,
V/III ratio is 50, with a thickness of 25nm；
5b) with the growth conditions of high pressure and high V/III ratio, high pressure/high V/III is grown than GaN layer, growth pressure is
300Torr, V/III 110, with a thickness of 25nm.
Step 6,8 extension of GaN channel layer is on GaN superlattice layer 7, with a thickness of 300nm；
Step 7, for 9 extension of AlGaN potential barrier on GaN channel layer 8, Al element molar content is 25%, with a thickness of
25nm；
Step 8,10 extension of GaN cap is in AlGaN potential barrier 9, with a thickness of 3nm.
Compared with Example 1, the periodicity of GaN:Fe/GaN resistive formation 6 is more, thickness is bigger, Fe impurity for the present embodiment 2
Doping concentration it is bigger, therefore OFF state electric leakage it is more slightly lower than embodiment 1, breakdown voltage is slightly higher, breakdown voltage 600V, OFF state electric leakage
More 8x 10-7A/mm。
Embodiment 3
Si substrate 1 is circle, diameter 8inch.Si substrate, AlN nucleating layer, GaN channel layer, AlGaN potential barrier and
The thickness of GaN cap is respectively 1mm, 0.5 μm, 300nm, 15nm and 2nm.
Three layers in total of AlGaN buffer layer 3-5, wherein every layer of Al element molar content is sequentially reduced from bottom to up, respectively
It is 0.7,0.5 and 0.3, thickness successively increases, respectively 300nm, 500nm and 700nm.
By intentional iron Fe doped gan layer and unintentional doped gan layer, alternately connection forms GaN:Fe/GaN resistive formation 6, often
Layer with a thickness of 100nm, the period is 3 periods, and the doping concentration of the Fe impurity of intentional iron Fe doped gan layer is 1E19cm-3。
GaN superlattice layer 7 by low pressure/low V/III for being grown under the conditions of low pressure and low V/III ratio than GaN layer and high pressure and
High pressure/high the V/III grown under the conditions of high V/III ratio alternately connection composition periodically than GaN layer, every layer with a thickness of 50nm,
Period is 5 periods.
Such as FIG. 1 to FIG. 8, a kind of manufacturing method of the GaN base radio-frequency devices epitaxial structure based on Si substrate, including walk as follows
It is rapid:
Si substrate is put into Metallo-Organic Chemical Vapor deposition (MOCVD) equipment, in the reaction chamber to Si by step 1
Substrate surface is made annealing treatment, and 1200 degrees Celsius of temperature, the time 15 minutes；
Step 2,2 extension of AlN nucleating layer is on Si substrate 1；
Step 3, successively extension exists for the first AlGaN buffer layer 3, the 2nd AlGaN buffer layer 4 and the 3rd AlGaN buffer layer 5
Above AlN nucleating layer 2, three layers altogether, Al element molar content successively declines, respectively value 0.7,0.5 and 0.3, single monolayer thick
Degree successively increases, and value is 300nm, 500nm and 700nm respectively；
Step 4, circulating repetition following steps 4a) and 4b) totally 3 times, extension on the basis of the 3rd AlGaN buffer layer 5
GaN:Fe/GaN resistive formation 6.
4a) with ferrocene Cp2Fe grows intentional Fe2O3 doping GaN layer as Fe doped source, and the doping concentration of Fe impurity is
1E19cm-3, with a thickness of 150nm；
4b) in intentional Fe2O3 doping GaN layer, it is not passed through Cp2Fe grows unintentional doped gan layer, with a thickness of 150nm.
Step 5, circulating repetition following steps 5a) and 5b) 5 times, the GaN in 6 epitaxial growth of GaN:Fe/GaN resistive formation
Superlattice layer 7.
5a) with the growth conditions of low pressure and low V/III ratio, low pressure/low V/III is grown than GaN layer, growth pressure is
50Torr, V/III ratio are 50, with a thickness of 50nm；
5b) with the growth conditions of high pressure and high V/III ratio, high pressure/high V/III is grown than GaN layer, growth pressure is
300Torr, V/III 110, with a thickness of 25nm.
Step 6,8 extension of GaN channel layer is on GaN superlattice layer 7, with a thickness of 300nm；
Step 7, for 9 extension of AlGaN potential barrier on GaN channel layer 8, Al element molar content is 25%, with a thickness of
25nm；
Step 8,10 extension of GaN cap is in AlGaN potential barrier 9, with a thickness of 3nm.
Compared with Example 1, the thickness of GaN superlattice layer is bigger for the present embodiment 3, crystal of the crystal quality compared with embodiment 1
Better quality, the 002 face rocking curve half-peak breadth of XRD are 418arcsec, and 102 face rocking curve half-peak breadths are 464arcsec.
The extension, by Optimizing Technical, is on the one hand pressed down based on the GaN base radio-frequency devices epitaxial structure on Si substrate
Prepared material failure, on the other hand improves film quality, and the extension prepared on large-sized Si substrate has crystal quality height, ditch
The feature that road carrier confinement is good, leakage current is small.Device high-breakdown-voltage, the height prepared using the epitaxial structure of utility model
Current density, the electric leakage of low OFF state, excellent pinch-off behavior, and performance degradation is small under high temperature.The utility model based on Si substrate
GaN base radio-frequency devices epitaxial structure manufacturing process it is simple, it is reproducible, be suitable for high-frequency, high-power wireless communication, thunder
It is applied up to equal.
The epitaxial structure of the utility model has crystal by the structure of GaN:Fe/GaN resistive formation and GaN superlattice layer
The high advantage of quality, the feature that channel carrier confinement is good, leakage current is small.The device prepared using the epitaxial structure of utility model
Part, compared with existing epitaxial structure, breakdown voltage is high, current density is high, OFF state electric leakage is low, pinch-off behavior is excellent, and high temperature
Lower performance degradation is small.
It should be noted that embodiment is not limited in any way the utility model, one of skill in the art is come
It says, various modifications and variations in form and details, these amendments based on the utility model can be carried out to the utility model
With change still within the claims of the utility model.
Claims (6)
1. the GaN base radio-frequency devices epitaxial structure based on Si substrate, which is characterized in that the GaN base radio-frequency devices epitaxy junction
Structure Si substrate, AlN nucleating layer, AlGaN buffer layer, GaN:Fe/GaN resistive formation, GaN superlattices by stacking gradually from bottom to up
Layer, GaN channel layer, AlGaN potential barrier and GaN cap composition；Wherein, GaN:Fe/GaN resistive formation is by intentional Fe2O3 doping GaN layer
Alternately connection forms with unintentional doped gan layer；The thickness of intentional the Fe2O3 doping GaN layer and unintentional every layer of doped gan layer
Degree is all 100nm~200nm；GaN superlattice layer is by low pressure/low V/III than GaN layer and high pressure/high V/III than the GaN layer period
Property alternately connection composition；The low pressure/low V/III is 20 than GaN layer and high pressure/thickness of the high V/III than every layer of GaN layer
~50nm.
2. the GaN base radio-frequency devices epitaxial structure according to claim 1 based on Si substrate, which is characterized in that described
Low pressure/low V/III is 3~5 periods than the repetition period of GaN layer than GaN layer and high pressure/high V/III.
3. the GaN base radio-frequency devices epitaxial structure according to claim 1 based on Si substrate, which is characterized in that described
The repetition period of intentional Fe2O3 doping GaN layer and unintentional doped gan layer is 3~5 periods, and the Fe of intentional Fe2O3 doping GaN layer is miscellaneous
The doping concentration of matter is 1E19cm‐3~1E20cm‐3。
4. the GaN base radio-frequency devices epitaxial structure according to claim 1 based on Si substrate, which is characterized in that described
Three layers in total of AlGaN buffer layer, wherein every layer of Al element molar content percentage is sequentially reduced from bottom to up, and all 20~
In the range of 70%, thickness is successively increased, and all in the range of 200nm~800nm.
5. the GaN base radio-frequency devices epitaxial structure according to claim 1 based on Si substrate, which is characterized in that described
Si substrate is circle, diameter 6inch-10inch.
6. the GaN base radio-frequency devices epitaxial structure according to claim 1 based on Si substrate, which is characterized in that described
Si substrate, AlN nucleating layer, AlGaN buffer layer, GaN channel layer, AlGaN potential barrier and GaN cap thickness be respectively 0.5-
2mm, 0.2-1 μm, 600-2400nm, 100-500nm, 10-30nm and 2-5nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108695385A (en) * | 2018-07-17 | 2018-10-23 | 中山市华南理工大学现代产业技术研究院 | A kind of GaN base radio-frequency devices epitaxial structure and its manufacturing method based on Si substrates |
| CN111477535A (en) * | 2019-12-31 | 2020-07-31 | 厦门市三安集成电路有限公司 | Composite silicon substrate and preparation method and application thereof |
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2018
- 2018-07-17 CN CN201821130694.0U patent/CN208368514U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108695385A (en) * | 2018-07-17 | 2018-10-23 | 中山市华南理工大学现代产业技术研究院 | A kind of GaN base radio-frequency devices epitaxial structure and its manufacturing method based on Si substrates |
| CN108695385B (en) * | 2018-07-17 | 2024-04-05 | 中山市华南理工大学现代产业技术研究院 | GaN-based radio frequency device epitaxial structure based on Si substrate and manufacturing method thereof |
| CN111477535A (en) * | 2019-12-31 | 2020-07-31 | 厦门市三安集成电路有限公司 | Composite silicon substrate and preparation method and application thereof |
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