CN116960173B - High electron mobility transistor epitaxial structure, preparation method and HEMT device - Google Patents

High electron mobility transistor epitaxial structure, preparation method and HEMT device Download PDF

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CN116960173B
CN116960173B CN202311204131.7A CN202311204131A CN116960173B CN 116960173 B CN116960173 B CN 116960173B CN 202311204131 A CN202311204131 A CN 202311204131A CN 116960173 B CN116960173 B CN 116960173B
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layer
substrate
buffer layer
mocvd
electron mobility
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CN116960173A (en
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刘春杨
吕蒙普
胡加辉
金从龙
顾伟
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Jiangxi Zhao Chi Semiconductor Co Ltd
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Jiangxi Zhao Chi Semiconductor Co Ltd
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

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Abstract

The invention provides a high electron mobility transistor epitaxial structure, a preparation method and a HEMT device, wherein the epitaxial structure comprises a Si substrate, and a CN pre-layer, an AlN buffer layer and a composite layer which are sequentially laminated on the Si substrate, wherein C is introduced in the process of growing the CN pre-layer 3 H 8 And NH 3 Specifically, the Si substrate is pretreated, i.e. C is introduced simultaneously, before the AlN buffer layer is deposited on the Si substrate 3 H 8 And NH 3 And a CN pre-layer grows on the Si substrate, so that the concentration of background carriers at an interface is reduced, the surface flatness of the AlN buffer layer is improved, and the crystal quality of the epitaxial layer is improved.

Description

High electron mobility transistor epitaxial structure, preparation method and HEMT device
Technical Field
The invention relates to the technical field of semiconductors, in particular to a high electron mobility transistor epitaxial structure, a preparation method and an HEMT device.
Background
As a third-generation semiconductor material, the GaN-based material has the advantages of large forbidden bandwidth, high electron saturation drift speed, good chemical stability, radiation resistance, high temperature resistance, easiness in forming heterojunction and the like, and becomes a preferred material for manufacturing a high-temperature, high-frequency, high-power and radiation-resistant High Electron Mobility Transistor (HEMT) structure. The GaN-based heterostructure has high carrier concentration and electron mobility, on-resistance is small, and the advantage of forbidden band width enables the GaN-based heterostructure to bear high working voltage. Therefore, the GaN-based HEMT is suitable for application fields such as high-temperature high-frequency high-power devices, low-loss-rate switching devices and the like.
For a GaN-based HEMT power device, leakage in the off state and power output in the on state are important indicators for measuring the performance of the electronic device. In the application field of microwave power devicesWhen the device operates at high frequency, the leakage of the device causes energy loss, deteriorating the operation performance of the device. The low leakage current in the off state can not only reduce the off-state loss of the device, but also improve the working voltage of the device. Compared with the traditional Si material, the GaN material has wider forbidden bandwidth and theoretically has larger critical breakdown field strength. However, the unintentionally doped GaN film grown by MOCVD is usually N-type, and the concentration of bulk electrons is in the order of 10 17 cm -3 The prepared GaN-based HEMT material structure cannot show the high voltage-resistant advantage of the third-generation semiconductor material due to the existence of the low-resistance conducting layer. The leakage path of the HEMT device mainly vertically passes through the buffer layer in the HEMT and then horizontally passes through the silicon body material (AlN/Si interface), so that the main bottleneck for limiting the improvement of the breakdown voltage of the device is the epitaxial buffer layer, the silicon material and the interface between the epitaxial buffer layer and the epitaxial layer.
In general, in order to improve the crystal quality of the HEMT epitaxial layer, the design can be performed from both the silicon substrate and the epitaxial buffer layer. In the aspect of silicon substrate design, the leakage channel at the interface can be blocked by doping p-type silicon, so that the diffusion of background carriers is reduced; in the aspect of epitaxial buffer layer design, the high resistance characteristic of the HEMT epitaxial layer can be improved by adopting methods of increasing the thickness of the buffer layer, introducing Fe or C and other impurities to dope and compensate the concentration of background carriers and the like. The interface treatment of the silicon substrate and the epitaxial buffer layer has less research, and background shallow donor impurities (Si and O) diffuse from the silicon substrate to the epitaxial buffer layer through the interface to form a leakage channel, so that the device can be broken down.
In recent years, the interface treatment method of the substrate and the buffer layer mainly comprises pre-paving NH 3 And pre-paving Al. Since Si atoms are easily exposed to the Si substrate at high temperature, the Si atoms have the effect of resisting the surfactant, and the surface is equal to NH 3 Amorphous SiN is easy to form, so that the interface is unclear and the surface roughness is large; si-Al which is easy to form monoatomic layer with Al, introduces repulsive electric dipole moment, prevents the subsequent AlN buffer layer from continuously growing on the surface, leads to the surface morphology deterioration, and leads to the dislocation in the AlN material to incline in the dislocation climbing process due to the interaction between Si atoms and linear dislocation due to the Si doping, thereby introducing strainAnd causes the problems of AlN such as warping and cracking.
Disclosure of Invention
Based on the background carrier concentration, the invention aims to reduce the background carrier concentration at the interface between a silicon substrate and an epitaxial buffer layer, improve the surface flatness of the buffer layer interface and improve the crystal quality of the buffer layer.
According to the embodiment of the invention, the epitaxial structure of the high electron mobility transistor comprises a Si substrate, and a CN pre-paved layer, an AlN buffer layer and a composite layer which are sequentially laminated on the Si substrate, wherein the composite layer comprises an AlGaN buffer layer, a GaN high-resistance buffer layer, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN cap layer which are sequentially laminated on the AlN buffer layer, and the thickness of the CN pre-paved layer is 5-50 nm.
According to an embodiment of the present invention, a method for preparing an epitaxial structure of a high electron mobility transistor is used for preparing the above epitaxial structure of a high electron mobility transistor, and the method includes:
providing a Si substrate;
depositing a CN pre-paving layer, an AlN buffer layer and a composite layer on the Si substrate in sequence;
wherein, C is introduced in the process of growing the CN pre-paved layer 3 H 8 And NH 3 。
Further, the step of sequentially depositing a CN pre-layer, an AlN buffer layer, and a composite layer on the Si substrate includes:
placing the Si substrate into an MOCVD cavity, and cleaning;
introducing C into MOCVD cavity containing cleaned Si substrate 3 H 8 And NH 3 Growing the CN pre-paved layer under the preset condition;
and depositing the AlN buffer layer and the composite layer on the CN pre-paved layer in sequence, wherein the composite layer comprises an AlGaN buffer layer, a GaN high-resistance buffer layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer which are sequentially laminated on the AlN buffer layer.
Further, in the step of placing the Si substrate into the MOCVD cavity and performing cleaning treatment, after the Si substrate is placed into the MOCVD cavity, controlling the temperature in the MOCVD cavity to be 1000-1200 ℃, controlling the pressure in the MOCVD cavity to be 50-150 mbar, and carrying out cleaning treatment on the Si substrate in H 2 And (5) treating for 5-10 min under the atmosphere.
Further, C is simultaneously introduced into the MOCVD cavity body in which the Si substrate after the cleaning treatment is placed 3 H 8 And NH 3 And under preset conditions, controlling C in the step of growing the CN pre-layering 3 H 8 The flow rate of the catalyst is 100 sccm-500 sccm, NH 3 The flow rate of the water is 1000 sccm to 3000 sccm.
Further, C is simultaneously introduced into the MOCVD cavity body in which the Si substrate after the cleaning treatment is placed 3 H 8 And NH 3 And in the step of growing the CN pre-layering under the preset condition, controlling the temperature in the MOCVD cavity to be 850-1000 ℃ and the pressure in the MOCVD cavity to be 50-100 mbar.
Further, C is simultaneously introduced into the MOCVD cavity body in which the Si substrate after the cleaning treatment is placed 3 H 8 And NH 3 And under the preset condition, in the step of growing the CN pre-paved layer, controlling the growing time of the CN pre-paved layer to be 10-30 min, wherein the carrier gas is H 2 。
According to the embodiment of the invention, the HEMT device comprises the high electron mobility transistor epitaxial structure.
The beneficial effects of the invention are as follows:
the epitaxial structure of the transistor with high electron mobility comprises a Si substrate, and a CN pre-layering layer, an AlN buffer layer and a composite layer which are sequentially laminated on the Si substrate, wherein C is introduced in the process of growing the CN pre-layering layer 3 H 8 And NH 3 Specifically, the Si substrate is pretreated, i.e. C is introduced simultaneously, before the AlN buffer layer is deposited on the Si substrate 3 H 8 And NH 3 To grow a CN pre-layer on the Si substrate to reduce the background load of the interfaceThe concentration of the carriers improves the surface evenness of the AlN buffer layer, thereby improving the crystal quality of the epitaxial layer.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial structure of a high electron mobility transistor according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for preparing an epitaxial structure of a high electron mobility transistor according to an embodiment of the present invention;
FIG. 3 is a surface roughness map obtained in comparative example 1 using a treatment method of pre-laying Al between a substrate and a buffer layer;
FIG. 4 is a schematic illustration of a pre-applied NH between the substrate and the buffer layer in comparative example 2 3 A surface roughness map is obtained;
FIG. 5 is a surface roughness map obtained in example 11 of the present invention using a pre-deposition of CN between the substrate and the buffer layer.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, a schematic structural diagram of a high electron mobility transistor epitaxial structure provided by an embodiment of the present invention includes a Si substrate 1, and a CN pre-layer 2, an AlN buffer layer 3, and a composite layer sequentially disposed on the Si substrate 1, where the composite layer includes an AlGaN buffer layer 4, a GaN high-resistance buffer layer 5, a GaN channel layer 6, an AlN insertion layer 7, an AlGaN barrier layer 8, and a GaN cap layer 9 sequentially stacked on the AlN buffer layer 3.
In the present embodiment, the Si substrate 1 is placed in an MOCVD (Metal Organic Chemical Vapor Deposition ) chamber, and C is introduced under certain conditions 3 H 8 And NH 3 To form the CN pre-clad layer 2 on the Si substrate 1, as an example of the present invention, the thickness of the CN pre-clad layer 2 is 5nm to 50nm, and exemplary, the thickness of the CN pre-clad layer 2 is 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 50nm, or the like, but is not limited thereto; the thickness of the AlGaN buffer layer 4 is 1 μm to 3 μm, and exemplary, but not limited thereto, the thickness of the AlGaN buffer layer 4 is 1 μm, 1.5 μm, 2 μm, 2.5 μm, or 3 μm, etc.; the thickness of the GaN high-resistance buffer layer 5 is 1 μm to 2 μm, and exemplary thicknesses of the GaN high-resistance buffer layer 5 are 1 μm, 1.2 μm, 1.4 μm, 1.6 μm, 1.8 μm, or 2 μm, etc., but are not limited thereto; the thickness of the GaN channel layer 6 is 300nm to 600nm, and exemplary, but not limited thereto, the thickness of the GaN channel layer 6 is 300nm, 400nm, 500nm, 600nm, or the like; the thickness of the AlN insertion layer 7 is 1nm to 5nm, and the thickness of the AlN insertion layer 7 is, but not limited to, 1nm, 2nm, 3nm, 4nm, 5nm, or the like, as an example; the thickness of the AlGaN barrier layer 8 is 20nm to 25nm, and exemplary, but not limited thereto, the thickness of the AlGaN barrier layer 8 is 20nm, 21nm, 22nm, 23nm, 24nm, 25nm, or the like; the thickness of the GaN cap layer 9 is exemplified by 3nm to 5nm, and the thickness of the GaN cap layer 9 is 3nm, 4nm, 5nm, or the like, but is not limited thereto.
Correspondingly, referring to fig. 2, a flowchart of a method for preparing an epitaxial structure of a high electron mobility transistor according to an embodiment of the present invention is provided, and the embodiment of the present invention further provides a method for preparing an epitaxial structure of a high electron mobility transistor, which is used for preparing the above-mentioned epitaxial structure of a high electron mobility transistor, and specifically includes the following steps:
s100: providing a Si substrate;
in this embodiment, the Si substrate is a p-type (111) crystal orientation Si substrate.
S200: depositing a CN pre-paving layer, an AlN buffer layer and a composite layer on the Si substrate in sequence;
specifically, S200 includes:
s201: placing the Si substrate into an MOCVD cavity, and cleaning;
specifically, after the Si substrate is placed in the MOCVD cavity, controlling the temperature in the MOCVD cavity to be 1000-1200 ℃, controlling the pressure in the MOCVD cavity to be 50-150 mbar, and carrying out H treatment 2 And (5) treating for 5-10 min in an atmosphere to remove the oxide on the surface of the Si-based substrate.
S202: introducing C into MOCVD cavity containing cleaned Si substrate 3 H 8 And NH 3 Growing the CN pre-paved layer under the preset condition;
specifically, control C 3 H 8 The flow rate of the catalyst is 100 sccm-500 sccm, NH 3 The flow rate of the water is 1000 sccm-3000 sccm;
controlling the temperature in the MOCVD cavity to be 850-1000 ℃ and the pressure in the MOCVD cavity to be 50-100 mbar;
controlling the growth time of the CN pre-paved layer to be 10-30 min, wherein the carrier gas is H 2 ；
Finally preparing a CN pre-paved layer with the thickness of 5-50 nm, wherein the CN pre-paved layer is formed by H 2 In the carrier gas environment growth process, the surface of the CN layer is easy to grow to form a two-dimensional material, so that the growth of a subsequent AlN buffer layer is facilitated, al atoms are easier to transversely diffuse on the surface of the CN layer, and an AlN film with a flat surface is formed. And by N 2 If carrier gas is used, the surface of the CN layer is disturbed in the growth process, so that a three-dimensional material is easy to form, and the AlN buffer layer with a flat surface is not easy to obtain.
S203: growing an AlN buffer layer on the CN pre-paved layer;
specifically, after the growth of the CN pre-layering layer is finished, the temperature in the MOCVD cavity is regulated to 1000-1200 ℃, the pressure is regulated to 40-100 mbar, and the thickness of the AlN buffer layer is controlled to be 150-300 nm.
S204: growing an AlGaN buffer layer on the AlN buffer layer;
specifically, after the AlN buffer layer is grown, the temperature in the MOCVD cavity is regulated to 1000-1200 ℃, the pressure is regulated to 30-100 mbar, the thickness of the AlGaN buffer layer is controlled to be 1-3 mu m, and the Al component is controlled to be 0.1-0.8.
S205: growing a GaN high-resistance buffer layer on the AlGaN buffer layer;
specifically, after the AlGaN buffer layer is grown, the temperature in the MOCVD cavity is regulated to 950-1050 ℃, the pressure is regulated to 50-100 mbar, the thickness of the GaN high-resistance buffer layer is controlled to be 1-2 mu m, wherein the GaN high-resistance buffer layer is doped with C, and the doping concentration of C is 10 19 cm -3 ~10 20 cm -3 。
S206: growing a GaN channel layer on the GaN high-resistance buffer layer;
specifically, after the growth of the GaN high-resistance buffer layer is finished, the temperature in the MOCVD cavity is regulated to 1050-1150 ℃, the pressure is regulated to 100-300 mbar, and the thickness of the GaN channel layer is controlled to 300-600 nm.
S207: growing an AlN inserting layer on the GaN channel layer;
specifically, after the growth of the GaN channel layer is finished, the temperature in the MOCVD cavity is regulated to 1050-1150 ℃, the pressure is regulated to 30-100 mbar, and the thickness of the AlN insert layer is controlled to be 1-5 nm.
S208: growing an AlGaN barrier layer on the AlN insertion layer;
specifically, after the AlN insertion layer is grown, the temperature in the MOCVD cavity is regulated to 1050-1150 ℃, the pressure is regulated to 30-100 mbar, the thickness of the AlGaN barrier layer is controlled to be 20-25 nm, and the Al component is controlled to be 0.2-0.25.
S209: growing a GaN cap layer on the AlGaN barrier layer;
specifically, after the AlGaN barrier layer is grown, the temperature in the MOCVD cavity is regulated to 1050-1150 ℃, the pressure is regulated to 30-100 mbar, and the thickness of the GaN cap layer is controlled to be 3-5 nm.
S210: and after the epitaxial structure is grown, the temperature of the reaction cavity is reduced, and the epitaxial growth is finished after the reaction cavity is cooled to room temperature in a nitrogen atmosphere.
In the growth process, trimethylaluminum (TMAl), trimethylgallium, or triethylgallium (TMGa or TEGa) is used as a precursor of the group iii source; ammonia as a precursor of the V group source, C 3 H 8 As reactants, nitrogen and hydrogen were used as carrier gases.
The invention is further illustrated by the following examples:
example 1
The embodiment provides a high electron mobility transistor epitaxial structure, which comprises a Si substrate, and a CN pre-paved layer, an AlN buffer layer and a composite layer which are sequentially arranged on the Si substrate, wherein the composite layer comprises an AlGaN buffer layer, a GaN high-resistance buffer layer, a GaN channel layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer which are sequentially laminated on the AlN buffer layer.
In this embodiment, the Si substrate is placed in an MOCVD (Metal Organic Chemical Vapor Deposition ) chamber and C is introduced under certain conditions 3 H 8 And NH 3 To form a CN pre-blanket on a Si substrate, specifically, the thickness of the CN pre-blanket is 20nm; the thickness of the AlGaN buffer layer is 1 μm to 3 μm, and exemplary, but not limited thereto, the thickness of the AlGaN buffer layer is 1 μm, 1.5 μm, 2 μm, 2.5 μm, or 3 μm, etc.; the thickness of the GaN high-resistance buffer layer is 1 μm to 2 μm, and exemplary, but not limited thereto, thicknesses of the GaN high-resistance buffer layer are 1 μm, 1.2 μm, 1.4 μm, 1.6 μm, 1.8 μm, or 2 μm, etc.; the thickness of the GaN channel layer is 300nm to 600nm, and exemplary, but not limited thereto, the thickness of the GaN channel layer is 300nm, 400nm, 500nm, 600nm, or the like; the thickness of the AlN intercalation layer is 1nm to 5nm, and exemplified, but not limited to, 1nm, 2nm, 3nm, 4nm or 5nm, etc.; the AlGaN barrier layer has a thickness of 20nm to 25nm, and exemplary AlGaN barrier layers have a thickness of 20nm, 21nm, 22nm, 23nm, 24nm, 25nm, or the like, but is not limited thereto; the thickness of the GaN cap layer is exemplified by, but not limited to, 3nm to 5nm, and the thickness of the GaN cap layer is 3nm, 4nm, 5nm, or the like.
The preparation method of the epitaxial structure of the high electron mobility transistor in the embodiment comprises the following steps:
(1) Providing a Si substrate;
in this embodiment, the Si substrate is a p-type (111) crystal orientation Si substrate.
(2) Placing the Si substrate into an MOCVD cavity, and cleaning;
specifically, after placing the Si substrate in the MOCVD cavity, controlling the temperature in the MOCVD cavity to 1100 ℃, the pressure in the MOCVD cavity to be 100mbar, and placing the Si substrate in the H 2 And processing for 8min under the atmosphere to remove the oxide on the surface of the Si-based substrate.
(3) Introducing C into MOCVD cavity containing cleaned Si substrate 3 H 8 And NH 3 Growing the CN pre-paved layer under the preset condition;
specifically, control C 3 H 8 The flow rate of (C) is 200 sccm, NH 3 The flow rate of (2) is 1200 sccm;
controlling the temperature in the MOCVD cavity to be 1000 ℃ and the pressure in the MOCVD cavity to be 50mbar;
controlling the growth time of the CN pre-paved layer to be 15min, wherein the carrier gas is H 2 ；
Finally, a CN pre-layer with the thickness of 20nm is prepared, and the description is that in H 2 In the carrier gas environment growth process, the surface of the CN layer is easy to grow to form a two-dimensional material, so that the growth of a subsequent AlN buffer layer is facilitated, al atoms are easier to transversely diffuse on the surface of the CN layer, and an AlN film with a flat surface is formed. And by N 2 If carrier gas is used, the surface of the CN layer is disturbed in the growth process, so that a three-dimensional material is easy to form, and the AlN buffer layer with a flat surface is not easy to obtain.
(4) Growing an AlN buffer layer on the CN pre-paved layer;
specifically, after the growth of the CN pre-layering is finished, the temperature in the MOCVD cavity is regulated to 1100 ℃, the pressure is regulated to 50mbar, and the thickness of the AlN buffer layer is controlled to be 200 nm.
(5) Growing an AlGaN buffer layer on the AlN buffer layer;
specifically, after the AlN buffer layer is grown, the temperature in the MOCVD cavity is regulated to 1100 ℃, the pressure is regulated to 50mbar, the thickness of the AlGaN buffer layer is controlled to be 2 mu m, and the Al component is 0.2.
(6) Growing a GaN high-resistance buffer layer on the AlGaN buffer layer;
specifically, after the growth of the AlGaN buffer layer is finished, the temperature in the MOCVD cavity is regulated to 1000 ℃, the pressure is regulated to 50mbar, and the thickness of the GaN high-resistance buffer layer is controlled to be 1 mu m, wherein the GaN high-resistance buffer layer is doped with C, and the doping concentration of C is 10 19 cm -3 。
(7) Growing a GaN channel layer on the GaN high-resistance buffer layer;
specifically, after the growth of the GaN high-resistance buffer layer is finished, the temperature in the MOCVD cavity is regulated to 1050 ℃, the pressure is regulated to 200 mbar, and the thickness of the GaN channel layer is controlled to be 400nm.
(8) Growing an AlN inserting layer on the GaN channel layer;
specifically, after the growth of the GaN channel layer is finished, the temperature in the MOCVD cavity is regulated to 1050 ℃, the pressure is regulated to 50mbar, and the thickness of the AlN insert layer is controlled to be 1nm.
(9) Growing an AlGaN barrier layer on the AlN insertion layer;
specifically, after the AlN intercalation layer is grown, the temperature in the MOCVD cavity is regulated to 1050 ℃, the pressure is regulated to 50mbar, the thickness of the AlGaN barrier layer is controlled to be 20nm, and the Al component is 0.2.
(10) Growing a GaN cap layer on the AlGaN barrier layer;
specifically, after the growth of the AlGaN barrier layer is finished, the temperature in the MOCVD cavity is regulated to 1050 ℃, the pressure is regulated to 50mbar, and the thickness of the GaN cap layer is controlled to be 3nm.
(11) And after the epitaxial structure is grown, the temperature of the reaction cavity is reduced, and the epitaxial growth is finished after the reaction cavity is cooled to room temperature in a nitrogen atmosphere.
In the growth process, trimethylaluminum (TMAl), trimethylgallium, or triethylgallium (TMGa or TEGa) is used as a precursor of the group iii source; ammonia as a precursor of the V group source, C 3 H 8 As reactants, nitrogen and hydrogen were used as carrier gases.
Example 2
The present embodiment also provides a high electron mobility transistor epitaxial structure and a method for manufacturing the same, which are different from embodiment 1 in that the temperature in the MOCVD chamber is controlled to be 950 ℃ during the process of growing the CN pre-blanket.
Example 3
The present embodiment also provides a high electron mobility transistor epitaxial structure and a method for manufacturing the same, which are different from embodiment 1 in that the temperature in the MOCVD chamber is controlled to 900 ℃ during the process of growing the CN pre-blanket.
Example 4
The present embodiment also provides a high electron mobility transistor epitaxial structure and a method for manufacturing the same, which are different from embodiment 1 in that the temperature in the MOCVD chamber is controlled to 850 ℃ during the process of growing the CN pre-blanket.
Example 5
The present example also provides a high electron mobility transistor epitaxial structure and a method for fabricating the same, which are different from example 1 in that the temperature in the MOCVD chamber is controlled to 950 ℃ and the pressure in the MOCVD chamber is controlled to 60mbar during the process of growing the CN pre-blanket.
Example 6
The present embodiment also provides a high electron mobility transistor epitaxial structure and a method for manufacturing the same, which are different from embodiment 1 in that the temperature in the MOCVD chamber is controlled to 950 ℃ and the pressure in the MOCVD chamber is controlled to 70mbar in the process of growing the CN pre-blanket.
Example 7
The present example also provides a high electron mobility transistor epitaxial structure and a method for fabricating the same, which are different from example 1 in that the temperature in the MOCVD chamber is controlled to 950 ℃ and the pressure in the MOCVD chamber is controlled to 80mbar during the process of growing the CN pre-blanket.
Example 8
The present embodiment also provides a high electron mobility transistor epitaxial structure and a method for manufacturing the same, which are different from embodiment 1 in that the temperature in the MOCVD chamber is controlled to 950 ℃ and the pressure in the MOCVD chamber is controlled to 90mbar in the process of growing the CN pre-blanket.
Example 9
The present embodiment also provides a high electron mobility transistor epitaxial structure and a method for manufacturing the same, which are different from embodiment 1 in that in the process of growing the CN pre-layering, the temperature in the MOCVD chamber is controlled to 950 ℃, the pressure in the MOCVD chamber is controlled to 70mbar, and finally the CN pre-layering with the thickness of 25nm is manufactured.
Example 10
The present embodiment also provides a high electron mobility transistor epitaxial structure and a method for manufacturing the same, which are different from embodiment 1 in that in the process of growing the CN pre-layering, the temperature in the MOCVD cavity is controlled to be 950 ℃, the pressure in the MOCVD cavity is controlled to be 70mbar, and finally the CN pre-layering with the thickness of 15nm is manufactured.
Example 11
The present embodiment also provides a high electron mobility transistor epitaxial structure and a method for manufacturing the same, which are different from embodiment 1 in that in the process of growing the CN pre-layering, the temperature in the MOCVD chamber is controlled to 950 ℃, the pressure in the MOCVD chamber is controlled to 70mbar, and finally the CN pre-layering with the thickness of 10nm is manufactured.
Example 12
The present embodiment also provides a high electron mobility transistor epitaxial structure and a method for manufacturing the same, which are different from embodiment 1 in that in the process of growing the CN pre-layering, the temperature in the MOCVD cavity is controlled to be 950 ℃, the pressure in the MOCVD cavity is controlled to be 70mbar, and finally the CN pre-layering with the thickness of 5nm is manufactured.
The high electron mobility transistors having the high electron mobility transistor epitaxial structure obtained in examples 1 to 12 were tested under the same conditions, and the specific results were as follows:
as can be seen from the table, the high electron mobility transistor with the epitaxial structure of the high electron mobility transistor prepared by the method in the embodiment of the present invention has a larger breakdown voltage of 727V compared with the high electron mobility transistor prepared by the conventional methods of comparative example 1 and comparative example 2 under the same test conditions, and the high electron mobility transistor prepared by the methods in the other embodiments of the present invention has a higher breakdown voltage than the high electron mobility transistor prepared by the conventional methods.
In addition, in the high electron mobility transistor epitaxial structure prepared by the method in the embodiment of the present invention, the surface roughness after the pre-paving treatment is smaller than that of the high electron mobility transistor epitaxial structure prepared by the conventional method, in the embodiment 11 of the present invention, the surface roughness is only 0.23nm, please refer to fig. 3 to 5, fig. 3 is a surface roughness diagram obtained by adopting the pre-paving Al treatment method between the substrate and the buffer layer in comparative example 1; FIG. 4 is a schematic illustration of a pre-applied NH between the substrate and the buffer layer in comparative example 2 3 A surface roughness map is obtained; FIG. 5 shows a surface roughness map obtained by pre-laying CN between a substrate and a buffer layer in example 11 of the present invention, wherein the surface roughness map after pre-laying Al has holes; pre-laying NH 3 The surface roughness graph has raised nanometer columns; and (3) a surface roughness map after the CN is pre-paved, so that the surface is flat.
The embodiment of the invention also provides a HEMT device, which comprises the high electron mobility transistor epitaxial structure, wherein the high electron mobility transistor epitaxial structure can be obtained by the preparation method of the high electron mobility transistor epitaxial structure.
In summary, the high electron mobility transistor epitaxial structure and the preparation method thereof and the HEMT device in the embodiment of the invention comprise an Si substrate, and a CN pre-layer, an AlN buffer layer and a composite layer which are sequentially laminated on the Si substrate, wherein C is grownIn the process of N pre-layering, C is introduced 3 H 8 And NH 3 Specifically, the Si substrate is pretreated, i.e. C is introduced simultaneously, before the AlN buffer layer is deposited on the Si substrate 3 H 8 And NH 3 And a CN pre-layer grows on the Si substrate, so that the concentration of background carriers at an interface is reduced, the surface flatness of the AlN buffer layer is improved, and the crystal quality of the epitaxial layer is improved.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims (6)

1. The epitaxial structure of the high electron mobility transistor is characterized by comprising a Si substrate, and a CN pre-paved layer, an AlN buffer layer and a composite layer which are sequentially laminated on the Si substrate, wherein the composite layer comprises an AlGaN buffer layer, a GaN high-resistance buffer layer, a GaN channel layer, an AlN insert layer, an AlGaN barrier layer and a GaN cap layer which are sequentially laminated on the AlN buffer layer, and the thickness of the CN pre-paved layer is 5-50 nm;
in the process of growing the CN pre-layering, C is simultaneously introduced into the MOCVD cavity body in which the Si substrate after the cleaning treatment is placed 3 H 8 And NH 3 Growing the CN pre-paved layer under the preset condition, wherein the carrier gas is H 2 。
2. A method for preparing a high electron mobility transistor epitaxial structure according to claim 1, comprising:
providing a Si substrate;
depositing a CN pre-paving layer, an AlN buffer layer and a composite layer on the Si substrate in sequence;
wherein, C is introduced in the process of growing the CN pre-paved layer 3 H 8 And NH 3 ；
The step of sequentially depositing a CN pre-layer, an AlN buffer layer and a composite layer on the Si substrate comprises the following steps of:
placing the Si substrate into an MOCVD cavity, and cleaning;
introducing C into MOCVD cavity containing cleaned Si substrate 3 H 8 And NH 3 Growing the CN pre-paved layer under the preset condition, wherein the growing time of the CN pre-paved layer is controlled to be 10-30 min, and the carrier gas is H 2 ；
And depositing the AlN buffer layer and the composite layer on the CN pre-paved layer in sequence, wherein the composite layer comprises an AlGaN buffer layer, a GaN high-resistance buffer layer, a GaN channel layer, an AlN inserting layer, an AlGaN barrier layer and a GaN cap layer which are sequentially laminated on the AlN buffer layer.
3. The method of manufacturing a high electron mobility transistor epitaxial structure according to claim 2, wherein, in the step of placing the Si substrate in an MOCVD chamber and performing a cleaning process, the temperature in the MOCVD chamber is controlled to be 1000 ℃ to 1200 ℃, the pressure in the MOCVD chamber is controlled to be 50mbar to 150mbar, and the Si substrate is placed in the MOCVD chamber at H 2 And (5) treating for 5-10 min under the atmosphere.
4. The method for manufacturing a high electron mobility transistor epitaxial structure according to claim 2, wherein C is simultaneously introduced into the MOCVD chamber in which the Si substrate after the cleaning treatment is placed 3 H 8 And NH 3 And in the step of growing the CN pre-layering under the preset condition, controlling C 3 H 8 The flow rate of the catalyst is 100 sccm-500 sccm, NH 3 The flow rate of the water is 1000 sccm to 3000 sccm.
5. The method of fabricating a high electron mobility transistor epitaxial structure of claim 2, wherein the orientation is placed withC is simultaneously introduced into the MOCVD cavity of the Si substrate after the cleaning treatment 3 H 8 And NH 3 And in the step of growing the CN pre-layering under the preset condition, controlling the temperature in the MOCVD cavity to be 850-1000 ℃ and the pressure in the MOCVD cavity to be 50-100 mbar.
6. A HEMT device comprising the high electron mobility transistor epitaxial structure of claim 1.
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