CN117637954B - Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode - Google Patents

Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode Download PDF

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CN117637954B
CN117637954B CN202410101775.1A CN202410101775A CN117637954B CN 117637954 B CN117637954 B CN 117637954B CN 202410101775 A CN202410101775 A CN 202410101775A CN 117637954 B CN117637954 B CN 117637954B
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CN117637954A (en
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刘春杨
胡加辉
金从龙
顾伟
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Jiangxi Zhao Chi Semiconductor Co Ltd
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Abstract

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer sequentially comprises a substrate, and an N-type semiconductor layer, a multiple quantum well layer and a P-type semiconductor layer which are sequentially laminated on the substrate; the P-type semiconductor layer is of a periodic structure, the period number is 3-25, and each period comprises a first P-type GaN layer, a second P-type GaN layer and a two-dimensional InSe layer which are sequentially stacked; the GaN in the first P-type GaN layer is of a cubic sphalerite structure, and the GaN in the second P-type GaN layer is of a hexagonal wurtzite structure. By implementing the invention, the luminous efficiency of the light-emitting diode can be improved, and the working voltage of the light-emitting diode can be reduced.

Description

Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode
Technical Field
The invention relates to the field of semiconductor photoelectric devices, in particular to a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode.
Background
Ideal n-type and p-type materials are the preconditions for the application of various semiconductor materials, which are the basis for the performance of various semiconductor devices. For GaN-based LED devices that have been put into commercial production, n-type doping has been a well-established technique, and p-type doping is still an obstacle to the current further development of GaN-based LEDs, and hole concentration and hole mobility of p-type GaN-based materials are important parameters that directly affect the luminous efficiency of the device. Mg is the main dopant of p-type GaN-based materials, and due to low doping efficiency, low activation efficiency, and low mobility of holes, the concentration of holes in the quantum well is low, resulting in low light emission efficiency. In order to increase the hole concentration, a common method is to increase the doping concentration of Mg, and too high doping concentration of Mg can cause serious degradation of the crystal quality of the p-GaN layer and generate more defects; when the doping concentration of Mg is reduced, the crystal quality of the p-GaN layer may be improved, but the doping concentration is reduced, resulting in a reduction in the final hole concentration. In addition, the scholars also propose p-InGaN/AlGaN polarization doping, the polarization effect is utilized to improve the doping efficiency of Mg, but the In component In InGaN is extremely sensitive to the growth temperature, the lower growth temperature is required, the crystal quality is possibly reduced, the activation energy of the doped Mg In AlGaN is higher, the activation efficiency is lower, and both the crystal quality and the doping efficiency are difficult to be combined by the methods.
Disclosure of Invention
The invention aims to solve the technical problem of providing a light-emitting diode epitaxial wafer and a preparation method thereof, which can improve the hole concentration and the hole mobility of a light-emitting diode and improve the luminous efficiency.
In order to solve the problems, the invention discloses a light-emitting diode epitaxial wafer, which comprises a substrate, an N-type semiconductor layer, a multiple quantum well layer and a P-type semiconductor layer, wherein the N-type semiconductor layer, the multiple quantum well layer and the P-type semiconductor layer are sequentially laminated on the substrate; the P-type semiconductor layer is of a periodic structure, the period number is 3-25, and each period comprises a first P-type GaN layer, a second P-type GaN layer and a two-dimensional InSe layer which are sequentially stacked;
the GaN in the first P-type GaN layer is of a cubic sphalerite structure, and the GaN in the second P-type GaN layer is of a hexagonal wurtzite structure.
As an improvement of the technical scheme, the thickness of the first P-type GaN layer is 1-5 nm, the thickness of the second P-type GaN layer is 1-5 nm, and the thickness of the two-dimensional InSe layer is 0.8-1.6 nm.
As an improvement of the technical scheme, the thickness of the first P-type GaN layer is smaller than that of the second P-type GaN layer.
As an improvement of the technical scheme, the doping concentration of the first P-type GaN layer is 5×10 19 cm -3 ~1×10 21 cm -3 The doping concentration of the second P-type GaN layer is 1 multiplied by 10 19 cm -3 ~1×10 20 cm -3 。
As an improvement of the technical scheme, the light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, an undoped semiconductor layer, an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, a P-type semiconductor layer and a P-type contact layer which are sequentially laminated on the substrate.
As an improvement of the technical scheme, the buffer layer is an AlN layer, and the thickness of the AlN layer is 15-50 nm;
the undoped semiconductor layer is an undoped GaN layer, and the thickness of the undoped GaN layer is 1-3 mu m;
the N-type semiconductor layer is an N-type GaN layer with a thickness of 1 μm-3 μm and a doping concentration of 5×10 18 cm -3 ~1×10 20 cm -3 ；
The multi-quantum well layer is of a periodic structure, the period number is 6-12, each period comprises an InGaN quantum well layer and a GaN quantum barrier layer which are sequentially stacked, the thickness of the InGaN quantum well layer is 2-4 nm, the In component of the InGaN quantum well layer accounts for 0.1-0.5, and the thickness of the GaN quantum barrier layer is 8-20 nm;
the electron blocking layer is an AlGaN layer, the thickness of the electron blocking layer is 20 nm-100 nm, and the Al component accounts for 0.1-0.5;
the P-type contact layer is a third P-type GaN layer with the thickness of 10 nm-50 nm and the doping concentration of 5 multiplied by 10 19 cm -3 ~1×10 20 cm -3 。
Correspondingly, the invention also discloses a preparation method of the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer and comprises the following steps:
providing a substrate, and sequentially growing an N-type semiconductor layer, a multiple quantum well layer and a P-type semiconductor layer on the substrate;
the P-type semiconductor layer is of a periodic structure, the period number is 3-25, and each period comprises a first P-type GaN layer, a second P-type GaN layer and a two-dimensional InSe layer which are sequentially stacked; the GaN in the first P-type GaN layer is of a cubic sphalerite structure, and the GaN in the second P-type GaN layer is of a hexagonal wurtzite structure.
As an improvement of the technical scheme, the growth temperature of the first P-type GaN layer is 800-1000 ℃, and the growth pressure is 3000-4000 torr;
the growth temperature of the second P-type GaN layer is 800-1000 ℃, and the growth pressure is 100-600 torr;
the growth temperature of the two-dimensional InSe layer is 400-650 ℃, and the growth pressure is 0.1-5 torr.
As an improvement of the above technical solution, the light emitting diode epitaxial wafer includes a substrate, and a buffer layer, an undoped semiconductor layer, an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, a P-type semiconductor layer and a P-type contact layer sequentially stacked on the substrate; the multi-quantum well layer comprises an InGaN quantum well layer and a GaN quantum barrier layer;
the growth temperature of the buffer layer is 400-650 ℃, and the growth pressure is 1-10 torr;
the growth temperature of the undoped semiconductor layer is 1050-1200 ℃, and the growth pressure is 100-300 torr;
the growth temperature of the N-type semiconductor layer is 1100-1200 ℃, and the growth pressure is 100-300 torr;
the growth temperature of the InGaN quantum well layer is 700-900 ℃, and the growth pressure is 100-300 torr;
the growth temperature of the GaN quantum barrier layer is 900-1000 ℃, and the growth pressure is 100-300 torr;
the growth temperature of the electron blocking layer is 1000-1100 ℃, and the growth pressure is 50-100 torr;
the growth temperature of the P-type contact layer is 900-1000 ℃, and the growth pressure is 100-300 torr.
Correspondingly, the invention also discloses a light-emitting diode, which comprises the light-emitting diode epitaxial wafer.
The implementation of the invention has the following beneficial effects:
in the LED epitaxial wafer, the P-type semiconductor layer is of a periodic structure, the period number is 3-25, and each period comprises a first P-type GaN layer, a second P-type GaN layer and a two-dimensional InSe layer which are sequentially stacked; gaN in the first P-type GaN layer is of a cubic sphalerite structure, and GaN in the second P-type GaN layer is of a hexagonal wurtzite structure. In the P-type semiconductor layer based on the structure, the first P-type GaN layer is of a cubic zinc blende structure, has reverse symmetry, does not have spontaneous polarization effect in vivo, has small phonon scattering in the material, has high Mg doping efficiency, has higher hole mobility, and has relatively poor chemical stability and surface flatness. The second P-type GaN layer is of a hexagonal wurtzite structure, has non-central symmetry, has spontaneous polarization effect in vivo, and has low Mg doping efficiency and low hole mobility, but the GaN of the hexagonal wurtzite structure has stable chemical property and good surface flatness. The two-dimensional InSe layer has low resistivity and high electron hole mobility, and can improve the hole mobility of the P-type doped layer and reduce the working voltage of the LED. Through the periodic circulation of the first P type GaN layer, the second P type GaN layer and the two-dimensional InSe layer, the advantages of the first P type GaN layer, the stability of the first P type GaN layer and the flatness of the whole P type semiconductor layer are guaranteed, doping efficiency is improved, hole mobility is improved, and then the luminous efficiency of the light emitting diode is improved, and the working voltage of the light emitting diode is reduced.
Drawings
Fig. 1 is a schematic structural diagram of an led epitaxial wafer according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing an led epitaxial wafer according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail below in order to make the objects, technical solutions and advantages of the present invention more apparent.
Referring to fig. 1, the invention discloses a light emitting diode epitaxial wafer, which comprises a substrate 1, an N-type semiconductor layer 2, a multiple quantum well layer 3 and a P-type semiconductor layer 4 which are sequentially laminated on the substrate 1. The P-type semiconductor layer 4 is of a periodic structure, the period number is 3-25, and each period comprises a first P-type GaN layer 41, a second P-type GaN layer 42 and a two-dimensional InSe layer 43 which are sequentially stacked; wherein, gaN in the first P-type GaN layer 41 is in a cubic sphalerite structure, and GaN in the second P-type GaN layer 42 is in a hexagonal wurtzite structure. Based on the structure, not only can the doping concentration be improved, but also the hole mobility can be improved, so that the luminous efficiency is improved, and the working voltage is reduced.
Specifically, the thickness of the first P-type GaN layer 41 is 1nm to 5nm, and exemplary is 1.5nm, 2nm, 2.5nm, 3nm, 3.5nm, 4nm, or 4.5nm, but is not limited thereto. Preferably 1nm to 3nm, more preferably 2nm to 3nm.
The thickness of the second P-type GaN layer 42 is 1nm to 5nm, and exemplary is 1.5nm, 2nm, 2.5nm, 3nm, 3.5nm, 4nm, or 4.5nm, but is not limited thereto. Preferably 2nm to 4.5nm, more preferably 3nm to 4nm.
Preferably, in one embodiment, the thickness of the first P-type GaN layer 41 is smaller than that of the second P-type GaN layer 42, so as to improve the flatness after the two growth processes are completed, provide good conditions for the subsequent growth of the two-dimensional InSe layer 43, and also improve the overall flatness of the P-type semiconductor layer 4.
The thickness of the two-dimensional InSe layer 43 is 0.8nm to 1.6nm, and the two-dimensional InSe layer has a single-layer structure, so that hole migration can be promoted. Preferably, the thickness of the two-dimensional InSe layer 43 is 1nm to 1.6nm.
Wherein the doping concentration of the first P-type GaN layer 41 is 5×10 19 cm -3 ~5×10 21 cm -3 Because of its higher Mg doping efficiency, a relatively higher doping concentration is employed. Exemplary, the doping concentration of the first P-type GaN layer 41 is 7×10 19 cm -3 、9×10 19 cm -3 、1×10 20 cm -3 、3×10 20 cm -3 、6×10 20 cm -3 、9×10 20 cm -3 、2×10 21 cm -3 、4×10 21 cm -3 But is not limited thereto. Preferably 5X 10 19 cm -3 ~1×10 21 cm -3 More preferably 5X 10 19 cm -3 ~5×10 20 cm -3 。
Wherein the doping concentration of the second P-type GaN layer 42 is 5×10 18 cm -3 ~1×10 20 cm -3 Because the invention adopts higher Mg doping concentration in the first P-type GaN layer 41, lower Mg doping concentration is adopted in the second P-type GaN layer 42, and accordingly, the crystal quality of the second P-type GaN layer 42 is improved, so that the first P-type GaN layer 41 is easier to form good filling and leveling. Exemplary, the doping concentration of the second P-type GaN layer 42 is 6×10 18 cm -3 、8×10 18 cm -3 、9.5×10 18 cm -3 、2.5×10 19 cm -3 、4×10 19 cm -3 、6×10 19 cm -3 Or 8×10 19 cm -3 But is not limited thereto. Preferably 1X 10 19 cm -3 ~1×10 20 cm -3 . More preferably 2X 10 19 cm -3 ~7×10 19 cm -3 。
In one embodiment of the present invention, the light emitting diode epitaxial wafer includes a substrate 1, and a buffer layer 5, an undoped semiconductor layer 6, an N-type semiconductor layer 2, a multiple quantum well layer 3, an electron blocking layer 7, a P-type semiconductor layer 4, and a P-type contact layer 8 sequentially stacked on the substrate 1.
Among them, the substrate 1 is a sapphire substrate, a silicon substrate, or a carbonized substrate, but is not limited thereto.
Among them, the buffer layer 5 is an AlN layer or a GaN layer, but is not limited thereto. Preferably, the buffer layer 5 is an AlN layer. The thickness of the buffer layer 5 is 15nm to 50nm.
The undoped semiconductor layer 6 is an undoped GaN layer or an undoped AlGaN layer, but is not limited thereto. Undoped GaN layers are preferred. The thickness of the undoped semiconductor layer 6 is 1 μm to 3 μm.
The N-type semiconductor layer 2 is an N-type GaN layer or an N-type AlGaN layer, but is not limited thereto. Preferably an N-type GaN layer with Si doping concentration of 5×10 18 cm -3 ~1×10 20 cm -3 The thickness is 1 μm to 3 μm.
The multi-quantum well layer 3 is, but not limited to, an InGaN-GaN multi-quantum well, an InGaN-AlGaN multi-quantum well, or an AlGaN-AlGaN multi-quantum well. Preferably, the multiple quantum well layer 3 is of a periodic structure, the period number is 6-12, each period comprises an InGaN quantum well layer and a GaN quantum barrier layer which are sequentially stacked, the thickness of the InGaN quantum well layer is 2-4 nm, the In component ratio is 0.1-0.5, and the thickness of the GaN quantum barrier layer is 8-20 nm.
The electron blocking layer 7 is an AlGaN layer or an AlInGaN layer, but is not limited thereto. The preferred AlGaN layer has a thickness of 20nm to 100nm and an Al component ratio of 0.1to 0.5.
Specifically, the P-type contact layer 8 may be a third P-type GaN layer or a P-type InGaN layer, but is not limited thereto. Preferably, the P-type contact layer 8 is a third P-type GaN layer with a thickness of 10 nm-50 nm and a doping concentration of 5×10 19 cm -3 ~1×10 20 cm -3 。
Correspondingly, referring to fig. 2, the invention also provides a preparation method of the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer and specifically comprises the following steps:
s1: providing a substrate;
s2: sequentially growing an N-type semiconductor layer, a multiple quantum well layer and a P-type semiconductor layer on a substrate;
preferably, in some embodiments of the present invention, step S2 includes:
s21: growing a buffer layer on a substrate;
wherein the buffer layer may be grown by PVD, MOCVD, MBE or VPE, but is not limited thereto.
Preferably, in one embodiment of the present invention, the AlN layer is grown by PVD as a buffer layer. The growth temperature is 400-650 ℃, and the growth pressure is 1-10 torr; the sputtering power is 2000W to 4000W.
More preferably, after PVD growth of AlN layer is completed, the substrate is loaded into MOCVD and annealed in hydrogen atmosphere at 1000-1200 deg.C under 150-500 torr for 5 min-10 min.
S22: growing an undoped semiconductor layer on the buffer layer;
wherein the undoped semiconductor layer may be grown by PVD, MOCVD, MBE or VPE, but is not limited thereto.
Preferably, in one embodiment of the present invention, the undoped GaN layer is grown by MOCVD, and the undoped semiconductor layer is grown at 1050 ℃ to 1200 ℃ and at 100torr to 300torr.
S23: growing an N-type semiconductor layer on the undoped semiconductor layer;
among them, the N-type semiconductor layer may be grown by MOCVD, MBE, or VPE, but is not limited thereto.
Preferably, in one embodiment of the present invention, an N-type GaN layer is grown by MOCVD as an N-type semiconductor layer; the growth temperature is 1100-1200 ℃, and the growth pressure is 100-300 torr.
S24: growing a multi-quantum well layer on the N-type semiconductor layer;
in particular, the multiple quantum well layer may be grown by MOCVD, MBE, or VPE, but is not limited thereto.
Preferably, in one embodiment of the present invention, the InGaN quantum well layer and the GaN quantum barrier layer are grown periodically by MOCVD until a multi-quantum well layer is obtained. The growth temperature of the InGaN quantum well layer is 700-900 ℃, and the growth pressure is 100-300 torr; the growth temperature of the GaN quantum barrier layer is 900-1000 ℃, and the growth pressure is 100-300 torr.
S25: growing an electron blocking layer on the multiple quantum well layer;
wherein the electron blocking layer may be grown by PVD, MOCVD or MBE; but is not limited thereto.
Preferably, in one embodiment of the present invention, the AlGaN layer is grown by MOCVD at a growth temperature of 1000 ℃ to 1100 ℃ and a growth pressure of 50torr to 100torr.
S26: growing a P-type semiconductor layer on the electron blocking layer;
specifically, step S26 includes:
s261: growing a first P-type GaN layer;
wherein, the first P type GaN layer is grown by MOCVD, and the growth temperature is controlled to be 800 ℃ to 1000 ℃ and the growth pressure is controlled to be 3000torr to 4000torr; based on the growth conditions, a GaN crystal of a cubic zincblende structure can be obtained.
S262: growing a second P-type GaN layer on the first P-type GaN layer;
the second P-type GaN layer is grown through MOCVD, the growth temperature is controlled to be 800-1000 ℃, and the growth pressure is controlled to be 100-600 torr; based on the growth conditions, a GaN crystal of a hexagonal wurtzite structure can be obtained.
S263: growing a two-dimensional InSe layer on the second P-type GaN layer;
wherein, the two-dimensional InSe layer is grown by MOCVD, the growth temperature is 400-650 ℃, the growth pressure is 0.1-5 torr, the In source adopted In the growth process is TMIn, and the Se source is DMSe.
S264: periodically repeating the steps S261-S263 until a P-type semiconductor layer is obtained;
s27: growing a P-type contact layer on the P-type semiconductor layer;
in particular, the P-type contact layer may be grown by MOCVD, MBE, or VPE, but is not limited thereto.
Preferably, in one embodiment of the present invention, the third P-type GaN layer is grown by MOCVD, and the growth temperature is 900 ℃ to 1000 ℃ and the growth pressure is 100torr to 300torr as the P-type contact layer.
Further preferably, after the growth of the P-type contact layer is completed, annealing is performed in a nitrogen atmosphere for 5 minutes to 15 minutes, wherein the annealing temperature is 650 ℃ to 850 ℃.
The invention is further illustrated by the following examples:
example 1
Referring to fig. 1, the present embodiment provides a light emitting diode epitaxial wafer, which includes a substrate 1, a buffer layer 5, an undoped semiconductor layer 6, an N-type semiconductor layer 2, a multiple quantum well layer 3, an electron blocking layer 7, a P-type semiconductor layer 4, and a P-type contact layer 8 sequentially stacked on the substrate 1.
Wherein the substrate 1 is a sapphire substrate, the buffer layer 5 is an AlN layer, and the thickness of the AlN layer is 50nm. The undoped semiconductor layer 6 is an undoped GaN layer having a thickness of 2.5 μm. The N-type semiconductor layer 2 is an N-type GaN layer, the doping element is Si, and the doping concentration is 5×10 19 cm -3 The thickness thereof was 2.5. Mu.m. The multi-quantum well layer 3 is of a periodic structure, the period number is 10, and each period comprises an InGaN quantum well layer and a GaN quantum barrier layer which are sequentially stacked, wherein the thickness of the InGaN quantum well layer is 3nm, the in component ratio is 0.25, and the thickness of the GaN quantum barrier layer is 11nm. The electron blocking layer 7 is an AlGaN layer having a thickness of 30nm and an al composition ratio of 0.25.
Wherein the P-type semiconductor layer 4 has a periodic structure with a period number of 16, and each period comprises a first P-type GaN layer 41, a second P-type GaN layer 42 and a two-dimensional InSe layer 43 sequentially stacked, wherein the thickness of the first P-type GaN layer 41 is 2nm, and the Mg doping concentration is 1×10 20 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the second P-type GaN layer is 2nm, and the doping concentration of Mg is 3 multiplied by 10 19 cm -3 . Two-dimensionalThe thickness of the InSe layer was 0.8nm.
Wherein the P-type contact layer 8 is a third P-type GaN layer with a thickness of 20nm and a Mg doping concentration of 8X10 19 cm -3 。
The preparation method of the light-emitting diode epitaxial wafer in the embodiment comprises the following steps:
(1) A substrate is provided.
(2) Growing a buffer layer on a substrate;
wherein, growing an AlN layer by PVD as a buffer layer; specifically, the growth temperature is 520 ℃, the sputtering power is 3200W, and the pressure is 5torr. And after the growth is finished, loading the material into MOCVD, and annealing for 8min in a hydrogen atmosphere, wherein the annealing temperature is 1100 ℃, and the annealing pressure is 200torr.
(3) Growing an undoped semiconductor layer on the buffer layer;
wherein an undoped GaN layer is grown by MOCVD as an undoped semiconductor layer. The growth temperature is 1100 ℃ and the growth pressure is 200torr.
(4) Growing an N-type semiconductor layer on the undoped semiconductor layer;
wherein, the N-type GaN layer is grown by MOCVD, and the growth temperature is 1150 ℃ and the growth pressure is 300torr as the N-type semiconductor layer.
(5) Growing a multi-quantum well layer on the N-type semiconductor layer;
specifically, an InGaN quantum well layer and a GaN quantum barrier layer are periodically grown on an N-type semiconductor layer by MOCVD until a multiple quantum well layer is obtained. The growth temperature of the InGaN quantum well layer is 760 ℃, and the growth pressure is 200torr; the growth temperature of the quantum barrier layer is 920 ℃, and the growth pressure is 200torr.
(6) Growing an electron blocking layer on the multiple quantum well layer;
wherein, the AlGaN layer is grown by MOCVD, the temperature of which is 1080 ℃, and the growth pressure is 80torr.
(7) Growing a first P-type GaN layer;
wherein, the first P type GaN layer is grown by MOCVD, the growth temperature is 900 ℃, and the growth pressure is 3000torr.
(8) Growing a second P-type GaN layer on the first P-type GaN layer;
wherein, the second P type GaN layer is grown by MOCVD, the growth temperature is 900 ℃, and the growth pressure is 200torr.
(9) Growing a two-dimensional InSe layer on the second P-type GaN layer;
wherein, the two-dimensional InSe layer is grown by MOCVD, the growth temperature is 500 ℃, and the growth pressure is 1torr.
(10) Periodically repeating the steps (7) - (9) until a P-type semiconductor layer is obtained;
(11) Growing a P-type contact layer on the P-type semiconductor layer;
wherein, the third P-type GaN layer is grown by MOCVD, and is used as a P-type contact layer, the growth temperature is 940 ℃, and the growth pressure is 200torr.
(12) Annealing is carried out for 12min in nitrogen atmosphere, and the annealing temperature is 720 ℃.
Example 2
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 1 in that:
the thickness of the second P-type GaN layer 42 is 3nm and the number of cycles of the P-type semiconductor layer 4 is 13.
The remainder was the same as in example 1.
Example 3
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 2 in that:
the thickness of the first P-type semiconductor layer 41 is 2nm, and the number of cycles of the P-type semiconductor layer 4 is 10.
The remainder was the same as in example 2.
Example 4
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 3 in that:
the thickness of the second P-type GaN layer 42 is 4nm and the number of cycles of the P-type semiconductor layer 4 is 9.
The remainder was the same as in example 3.
Example 5
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 4 in that:
the thickness of the second P-type GaN layer 42 is 5nm.
The remainder was the same as in example 4.
Example 6
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 5 in that:
the growth pressure of the second P-type GaN layer 42 is 400torr.
The remainder was the same as in example 5.
Example 7
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 6 in that:
the growth pressure of the second P-type GaN layer 42 is 600torr.
The remainder was the same as in example 6.
Example 8
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 7 in that:
the growth pressure of the first P-type GaN layer 41 is 3300torr.
The remainder was the same as in example 7.
Example 9
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 8 in that:
the growth pressure of the first P-type GaN layer 41 was 3600torr.
The remainder was the same as in example 8.
Example 10
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 9 in that:
the growth pressure of the first P-type GaN layer 41 was 3800torr.
The remainder was the same as in example 9.
Comparative example 1
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that:
the P-type semiconductor layer is a P-type GaN layer with thickness of 60nm and doping concentration of 8X10 19 cm -3 The growth temperature is 900 DEG CThe growth pressure was 400torr.
The remainder was the same as in example 1.
The light-emitting diode epitaxial wafers obtained in examples 1to 10 and comparative example 1 were fabricated into 10mil×24mil chips, and the brightness and voltage were measured at 120mA current. The specific results are shown in the following table:
while the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.

Claims (10)

1. A light-emitting diode epitaxial wafer comprises a substrate, an N-type semiconductor layer, a multiple quantum well layer and a P-type semiconductor layer which are sequentially laminated on the substrate; the semiconductor device is characterized in that the P-type semiconductor layer is of a periodic structure, the period number is 3-25, and each period comprises a first P-type GaN layer, a second P-type GaN layer and a two-dimensional InSe layer which are sequentially stacked;
the GaN in the first P-type GaN layer is of a cubic sphalerite structure, and the GaN in the second P-type GaN layer is of a hexagonal wurtzite structure.
2. The light-emitting diode epitaxial wafer of claim 1, wherein the first P-type GaN layer has a thickness of 1nm to 5nm, the second P-type GaN layer has a thickness of 1nm to 5nm, and the two-dimensional InSe layer has a thickness of 0.8nm to 1.6nm.
3. The light emitting diode epitaxial wafer of claim 1 or 2, wherein a thickness of the first P-type GaN layer is smaller than a thickness of the second P-type GaN layer.
4. The light-emitting diode epitaxial wafer of claim 1, wherein the doping concentration of the first P-type GaN layer is 5 x 10 19 cm -3 ~1×10 21 cm -3 The doping concentration of the second P-type GaN layer is 1 multiplied by 10 19 cm -3 ~1×10 20 cm -3 。
5. The light-emitting diode epitaxial wafer according to claim 1, wherein the light-emitting diode epitaxial wafer comprises a substrate and a buffer layer, an undoped semiconductor layer, an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, a P-type semiconductor layer and a P-type contact layer which are sequentially laminated on the substrate.
6. The light-emitting diode epitaxial wafer of claim 5, wherein the buffer layer is an AlN layer with a thickness of 15-50 nm;
the undoped semiconductor layer is an undoped GaN layer, and the thickness of the undoped GaN layer is 1-3 mu m;
the N-type semiconductor layer is an N-type GaN layer with a thickness of 1 μm-3 μm and a doping concentration of 5×10 18 cm -3 ~1×10 20 cm -3 ；
The multi-quantum well layer is of a periodic structure, the period number is 6-12, each period comprises an InGaN quantum well layer and a GaN quantum barrier layer which are sequentially stacked, the thickness of the InGaN quantum well layer is 2-4 nm, the In component of the InGaN quantum well layer accounts for 0.1-0.5, and the thickness of the GaN quantum barrier layer is 8-20 nm;
the electron blocking layer is an AlGaN layer, the thickness of the electron blocking layer is 20 nm-100 nm, and the Al component accounts for 0.1-0.5;
the P-type contact layer is a third P-type GaN layer with the thickness of 10 nm-50 nm and the doping concentration of 5 multiplied by 10 19 cm -3 ~1×10 20 cm -3 。
7. A method for preparing a light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer according to any one of claims 1to 6, and is characterized by comprising the following steps:
providing a substrate, and sequentially growing an N-type semiconductor layer, a multiple quantum well layer and a P-type semiconductor layer on the substrate;
the P-type semiconductor layer is of a periodic structure, the period number is 3-25, and each period comprises a first P-type GaN layer, a second P-type GaN layer and a two-dimensional InSe layer which are sequentially stacked; the GaN in the first P-type GaN layer is of a cubic sphalerite structure, and the GaN in the second P-type GaN layer is of a hexagonal wurtzite structure.
8. The method for manufacturing a light-emitting diode epitaxial wafer according to claim 7, wherein the growth temperature of the first P-type GaN layer is 800-1000 ℃ and the growth pressure is 3000-4000 torr;
the growth temperature of the second P-type GaN layer is 800-1000 ℃, and the growth pressure is 100-600 torr;
the growth temperature of the two-dimensional InSe layer is 400-650 ℃, and the growth pressure is 0.1-5 torr.
9. The method for manufacturing a light-emitting diode epitaxial wafer according to claim 7, wherein the light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, an undoped semiconductor layer, an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer, a P-type semiconductor layer and a P-type contact layer which are sequentially laminated on the substrate; the multi-quantum well layer comprises an InGaN quantum well layer and a GaN quantum barrier layer;
the growth temperature of the buffer layer is 400-650 ℃, and the growth pressure is 1-10 torr;
the growth temperature of the undoped semiconductor layer is 1050-1200 ℃, and the growth pressure is 100-300 torr;
the growth temperature of the N-type semiconductor layer is 1100-1200 ℃, and the growth pressure is 100-300 torr;
the growth temperature of the InGaN quantum well layer is 700-900 ℃, and the growth pressure is 100-300 torr;
the growth temperature of the GaN quantum barrier layer is 900-1000 ℃, and the growth pressure is 100-300 torr;
the growth temperature of the electron blocking layer is 1000-1100 ℃, and the growth pressure is 50-100 torr;
the growth temperature of the P-type contact layer is 900-1000 ℃, and the growth pressure is 100-300 torr.
10. A light emitting diode comprising the light emitting diode epitaxial wafer according to any one of claims 1to 6.
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