CN116741905B - Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode - Google Patents
Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode Download PDFInfo
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Abstract
The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer which are sequentially laminated on the substrate; the electron blocking layer comprises an Mg-doped InN nucleation layer, a composite coating layer and an AlScN filling layer which are sequentially laminated on the multiple quantum well layer; the composite coating layer comprises an AlInN layer, an AlGaN layer and an AlN layer which are sequentially laminated on the Mg-doped InN nucleation layer; the Mg-doped InN nucleation layer comprises a plurality of nucleation points distributed on the multiple quantum well layer, and the composite coating layer coats the nucleation points. By implementing the invention, the luminous efficiency and antistatic capability of the light-emitting diode can be improved.
Description
Technical Field
The invention relates to the field of semiconductor photoelectric devices, in particular to a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode.
Background
Currently, gaN-based light emitting diodes have been widely used in the field of solid state lighting as well as in the field of display, attracting more and more attention. The GaN-based light emitting diode has been industrially produced and has been used in backlight, illumination, landscape lamp, and the like. At present, a conventional light emitting diode epitaxial wafer includes: the semiconductor device comprises a substrate, and a buffer layer, an undoped GaN layer, an N-type semiconductor layer, a multiple quantum well layer, an electron blocking layer and a P-type semiconductor layer which are sequentially grown on the substrate. In the conventional multiple quantum well and electron blocking layer, a band peak is formed due to lattice and energy level mismatch, which affects hole injection and antistatic ability due to lattice mismatch. The electron blocking layer and the P-type semiconductor layer are in lattice mismatch, so that the lattice quality is poor, the antistatic capability is affected, and the defects can capture holes to affect the hole concentration.
Disclosure of Invention
The invention aims to solve the technical problem of providing a light-emitting diode epitaxial wafer and a preparation method thereof, which can improve the light-emitting efficiency and antistatic capability of a light-emitting diode.
The invention also solves the technical problem of providing a light-emitting diode which has high luminous efficiency and strong antistatic capability.
In order to solve the problems, the invention discloses a light-emitting diode epitaxial wafer, which comprises a substrate, a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer, wherein the buffer layer, the undoped GaN layer, the N-type GaN layer, the multiple quantum well layer, the electron blocking layer and the P-type GaN layer are sequentially laminated on the substrate; the electron blocking layer comprises an Mg-doped InN nucleation layer, a composite coating layer and an AlScN filling layer which are sequentially laminated on the multiple quantum well layer; the composite coating layer comprises an AlInN layer, an AlGaN layer and an AlN layer which are sequentially laminated on the Mg-doped InN nucleation layer;
the Mg-doped InN nucleation layer comprises a plurality of nucleation points distributed on the multiple quantum well layer, and the composite coating layer coats the nucleation points.
As an improvement of the technical proposal, the doping element of the Mg-doped InN nucleation layer is Mg, and the doping concentration is 5 multiplied by 10 18 cm -3 ~5×10 20 cm -3 ；
The height of the nucleation point is 0.5 nm-5 nm.
As an improvement of the technical scheme, the thickness of the AlInN layer is 1 nm-10 nm, and the Al component accounts for 0.1-0.4;
the thickness of the AlGaN layer is 1 nm-10 nm, and the Al component accounts for 0.3-0.5;
the thickness of the AlN layer is 1 nm-10 nm.
As an improvement of the technical scheme, the AlScN filling layer has a thickness of 5-50 nm and an Al component ratio of 0.8-0.9.
As an improvement of the technical scheme, the Al component ratio in the AlInN layer is smaller than the Al component ratio in the AlGaN layer.
As an improvement of the technical scheme, the AlGaN layer is doped with Mg element, and the doping concentration is 5 multiplied by 10 19 cm -3 ~7×10 20 cm -3 。
Correspondingly, the invention also discloses a preparation method of the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer and comprises the following steps:
providing a substrate, and sequentially growing a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer on the substrate; the electron blocking layer comprises an Mg-doped InN nucleation layer, a composite coating layer and an AlScN filling layer which are sequentially laminated on the multiple quantum well layer; the composite coating layer comprises an AlInN layer, an AlGaN layer and an AlN layer which are sequentially laminated on the Mg-doped InN nucleation layer;
the Mg-doped InN nucleation layer comprises a plurality of nucleation points distributed on the multiple quantum well layer, and the composite coating layer coats the nucleation points.
As an improvement of the technical scheme, the growth temperature of the Mg-doped InN nucleation layer is 800-900 ℃ and the growth pressure is 100-300 torr;
the growth temperature of the composite coating layer is 900-950 ℃ and the growth pressure is 300-500 torr.
As an improvement of the technical scheme, the growth temperature of the AlScN filling layer is 970-1000 ℃, and the growth pressure is 50-100 torr.
Correspondingly, the invention also discloses a light-emitting diode, which comprises the light-emitting diode epitaxial wafer.
The implementation of the invention has the following beneficial effects:
1. in the light-emitting diode epitaxial wafer, the electron blocking layer comprises an Mg-doped InN nucleation layer, a composite coating layer and an AlScN filling layer which are sequentially laminated on the multiple quantum well layer; the composite coating layer comprises an AlInN layer, an AlGaN layer and an AlN layer which are sequentially laminated on the Mg-doped InN nucleation layer. The mobility of Mg atoms and In atoms In the Mg-doped InN nucleation layer is very high, nucleation points with uniform distribution can be formed, and a foundation is provided for the three-dimensional growth of a subsequent composite coating layer. In addition, the lattice constant of the Mg-doped InN nucleation layer is large, the lattice matching with the multi-quantum well layer is increased, the piezoelectric polarization of the multi-quantum well layer is reduced, the superposition of electron-hole wave functions in the multi-quantum well layer is increased, the energy band peak formed between the traditional multi-quantum well layer and the electron blocking layer is reduced, and the injection of holes is increased, so that the luminous efficiency and the antistatic capability are improved. The AlInN layer, the AlGaN layer and the AlN layer of the composite coating layer have a trend of gradually decreasing lattice constants, so that the layers have good lattice matching, and the formed three-dimensional composite coating layer has good lattice quality; the barrier height of the structure is gradually increased, so that energy band peaks caused by abrupt barrier changes are avoided, and holes caused by abrupt barrier changes are captured to cause consumption; in addition, through the guidance of the Mg doped InN nucleation layer, the composite coating layer is of a three-dimensional structure, stress can be released in three dimensions, compared with a two-dimensional plane structure, the compressive stress on the multi-quantum well layer is smaller, piezoelectric polarization is reduced, and luminous efficiency is improved. The AlScN filling layer has wide forbidden bandwidth, has stronger electron blocking effect, and improves antistatic capability.
2. In the light-emitting diode epitaxial wafer, the Al component proportion in the AlInN layer is controlled to be smaller than the Al component proportion in the AlGaN layer. Based on the control, the Al component in the composite coating layer is gradually increased, the growth of the three-dimensional structure is facilitated, the composite coating is formed, and the luminous efficiency and the antistatic capability of the light-emitting diode epitaxial wafer are improved.
3. In the light-emitting diode epitaxial wafer, the AlGaN layer is doped with Mg, holes are provided, enter the multi-quantum well layer through the three-dimensional structure of the composite coating layer, the surface area is larger, the concentration of the holes is increased, the expansion of the holes is increased, and the light-emitting efficiency and the antistatic capability of the light-emitting diode epitaxial wafer are effectively improved.
4. In the light-emitting diode epitaxial wafer, the Al component in the AlScN filling layer is controlled to be 0.8-0.9, and the lattice matching degree of the AlScN filling layer and the P-type GaN layer based on the component is very high, so that the consumption of holes in a non-radiative recombination center caused by lattice mismatch is avoided, and the light-emitting efficiency and the antistatic capability of the light-emitting diode epitaxial wafer are improved.
Drawings
Fig. 1 is a schematic structural diagram of an led epitaxial wafer according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an electron blocking layer according to an embodiment of the present invention;
fig. 3 is a flowchart of a method for manufacturing an led epitaxial wafer according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail below in order to make the objects, technical solutions and advantages of the present invention more apparent.
Referring to fig. 1 and 2, the invention discloses a light emitting diode epitaxial wafer, which comprises a substrate 1, a buffer layer 2, an undoped GaN layer 3, an N-type GaN layer 4, a multiple quantum well layer 5, an electron blocking layer 6 and a P-type GaN layer 7 which are sequentially laminated on the substrate 1; the electron blocking layer 6 comprises an InN doped Mg nucleation layer 61, a composite coating layer 62 and an AlScN filling layer 63 which are sequentially laminated on the multiple quantum well layer 5; the composite clad layer 62 includes an AlInN layer 621, an AlGaN layer 622, and an AlN layer 623 sequentially stacked on the Mg-doped InN nucleation layer 61. Based on the structure, lattice mismatch between the electron blocking layer 6 and the P-type GaN layer 7 can be reduced, crystal quality is improved, antistatic capability is increased, hole consumption is reduced, hole concentration entering the multi-quantum well layer is improved, hole expansion capability is improved, and luminous efficiency of the light emitting diode is improved.
The Mg-doped InN nucleation layer 61 includes a plurality of nucleation points distributed on the multiple quantum well layer 5, the height of the nucleation points is 0.5 nm-7 nm, if the height is greater than 7nm, the nucleation points have a merging trend, and it is difficult to effectively guide the three-dimensional growth of the subsequent composite cladding layer 62; if the height is less than 0.5nm, the guiding effect for the subsequent composite coating 62 is also poor. Exemplary, but not limited to, nucleation sites have a height of 0.8nm, 1.4nm, 2nm, 2.6nm, 3.4nm, 4.5nm, 5nm, or 6.8 nm. Preferably 0.5nm to 5nm.
The doping concentration of Mg in the Mg-doped InN nucleation layer 61 is 1×10 18 cm -3 ~5×10 20 cm -3 When the doping concentration is too low, a nucleation point structure is difficult to form; when the doping concentration is too high, nucleation point distribution uniformity is poor, and luminous efficiency and antistatic capability are difficult to effectively improve. Exemplary, the doping concentration of Mg in the Mg-doped InN nucleation layer 61 is 2×10 18 cm -3 、6×10 18 cm -3 、1×10 19 cm -3 、5×10 19 cm -3 、9×10 19 cm -3 Or 3X 10 20 cm -3 But is not limited thereto. Preferably 5X 10 18 cm -3 ~5×10 20 cm -3 。
The AlInN layer 621 has a thickness of 1nm to 10nm, and is exemplified by, but not limited to, 2nm, 4nm, 6nm, or 8 nm. The Al composition in the AlInN layer 621 has a ratio of 0.1 to 0.45, and exemplary is 0.15, 0.2, 0.25, 0.3, or 0.35, but is not limited thereto. Preferably 0.1 to 0.4.
The thickness of the AlGaN layer 622 is 1nm to 10nm, and is exemplified by, but not limited to, 2nm, 4nm, 6nm, or 8 nm. The Al composition of the AlGaN layer 622 is 0.3 to 0.6, and exemplary is 0.35, 0.4, 0.45 or 0.5, but not limited thereto. Preferably 0.3 to 0.5.
Preferably, in one embodiment of the present invention, the AlGaN layer 622 is doped with Mg element at a doping concentration of 5×10 19 cm -3 ~7×10 20 cm -3 . Based on this structure, the light emitting efficiency of the light emitting diode epitaxial wafer can be further improved. Exemplary, the doping concentration of Mg in AlGaN layer 622 is 7×10 19 cm -3 、9×10 19 cm -3 、1×10 20 cm -3 、3×10 20 cm -3 Or 6X 10 20 cm -3 But is not limited thereto.
Preferably, in one embodiment of the present invention, the Al composition ratio in AlInN layer 621 is smaller than the Al composition ratio in AlGaN layer. Based on the component control, the luminous efficiency and antistatic capability of the light-emitting diode epitaxial wafer can be further improved.
The AlN layer 623 has a thickness of 1nm to 10nm, and is exemplified by, but not limited to, 2nm, 4nm, 6nm, or 8 nm.
The AlScN filling layer 63 has a thickness of 5nm to 60nm, and is exemplified by, but not limited to, 8nm, 12nm, 23nm, 35nm, 40nm, 52nm, or 58 nm. Preferably 5nm to 50nm.
The Al component ratio in the AlScN filling layer 63 is 0.75-0.95, and if the Al component ratio is less than 0.75, the lattice mismatch between the whole electron blocking layer 6 and the P-type GaN layer 7 is aggravated, and the luminous efficiency of the light emitting diode epitaxial wafer is reduced. When the Al component ratio thereof is more than 0.95, it is difficult to effectively enhance the antistatic ability. Illustratively, the AlScN fill layer 63 has an Al composition ratio of 0.78, 0.82, 0.86, 0.9, or 0.94, but is not limited thereto. Preferably 0.8-0.9, and based on the component range, the luminous efficiency can be effectively improved while the higher antistatic capability is maintained.
Wherein the substrate 1 is a sapphire substrate, a silicon substrate, or Ga 2 O 3 A substrate, a SiC substrate, or a ZnO substrate, but is not limited thereto. A sapphire substrate is preferred.
The buffer layer 2 is an AlN layer or an AlGaN layer, but is not limited thereto. An AlN layer is preferred. The thickness of the buffer layer 2 is 20nm to 100nm, and is exemplified by 35nm, 40nm, 50nm, 60nm, 70nm, or 80nm.
The thickness of the undoped GaN layer 3 is 1 μm to 3 μm, and exemplary thicknesses are 1.1 μm, 1.4 μm, 1.7 μm, 2.2 μm, or 2.6 μm, but not limited thereto.
The doping element of the N-type GaN layer 4 is Si, but is not limited thereto. The doping concentration of the N-type GaN layer 4 was 5×10 18 cm -3 ~5×10 19 cm -3 The thickness is 1 μm to 3 μm, and exemplary is 1.5 μm, 1.7 μm, 2.3 μm or 2.5 μm, but is not limited thereto.
The multi-quantum well layer 5 is of a periodic structure, the period number is 3-15, and each period comprises an InGaN well layer and a GaN barrier layer which are sequentially stacked. The thickness of the single InGaN well layer is 2-5 nm, and the thickness of the single GaN barrier layer is 6-15 nm.
The doping element in the P-type GaN layer 7 is Mg, but is not limited thereto. P-type GaN layer 7The doping concentration of Mg in the alloy is 1 multiplied by 10 19 cm -3 ~1×10 21 cm -3 . The thickness of the P-type GaN layer 7 is 30nm to 100nm, and exemplary is 40nm, 45nm, 60nm, 70nm or 80nm, but is not limited thereto.
Correspondingly, referring to fig. 3, the invention also provides a preparation method of the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer and specifically comprises the following steps:
s1: providing a substrate;
preferably, in one embodiment of the present invention, the substrate is loaded into MOCVD and annealed at 1000-1100 ℃ under 200-600 torr for 5-8 min in hydrogen atmosphere to remove impurities such as particles, oxides, etc. on the surface of the substrate.
S2: sequentially growing a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer on a substrate;
specifically, step S2 includes:
s21: growing a buffer layer on a substrate;
wherein in one embodiment of the invention an AlN layer is grown by PVD as a buffer layer. In another embodiment of the present invention, the AlGaN layer is grown by MOCVD at a growth temperature of 500 ℃ to 700 ℃ and a growth pressure of 100torr to 300torr.
S22: growing an undoped GaN layer on the buffer layer;
in one embodiment of the present invention, the undoped GaN layer is grown by MOCVD at 1050-1150 ℃ and 100-500 torr.
S23: growing an N-type GaN layer on the undoped GaN layer;
in one embodiment of the invention, the N-type GaN layer is grown by MOCVD, the growth temperature is 1100-1150 ℃, and the growth pressure is 100-500 torr.
S24: growing a multi-quantum well layer on the N-type GaN layer;
wherein, in one embodiment of the present invention, the InGaN well layer and the GaN barrier layer are periodically grown by MOCVD until a multi-quantum well layer is obtained. The growth temperature of the InGaN well layer is 750-800 ℃, and the growth pressure is 100-500 torr. The growth temperature of the GaN barrier layer is 850-900 ℃, and the growth pressure is 100-500 torr.
S25: growing an electron blocking layer on the multiple quantum well layer;
wherein, step S25 includes:
s251: growing an InN doped nucleation layer on the multiple quantum well layer;
wherein the Mg-doped InN nucleation layer may be grown by MOCVD or MBE, but is not limited thereto.
Preferably, in one embodiment of the present invention, the Mg-doped InN nucleation layer is grown by MOCVD at a growth temperature of 800 ℃ to 900 ℃ and a growth pressure of 100torr to 300torr.
S252: growing an AlInN layer on the Mg-doped InN nucleation layer;
among them, an AlInN layer may be grown by PVD, MOCVD, or MBE, but is not limited thereto.
Preferably, in one embodiment of the present invention, the AlInN layer is grown by MOCVD, where the growth temperature is 900 ℃ to 950 ℃ and the growth pressure is 300torr to 500torr.
S253: growing an AlGaN layer on the AlInN layer;
among them, the AlGaN layer may be grown by PVD, MOCVD, or MBE, but is not limited thereto.
Preferably, in one embodiment of the present invention, the AlGaN layer is grown by MOCVD at a growth temperature of 900 ℃ to 950 ℃ and a growth pressure of 300torr to 500torr.
S254: growing an AlN layer on the AlGaN layer to obtain a composite wrapping layer;
among them, the AlN layer may be grown by PVD, MOCVD, or MBE, but is not limited thereto.
Preferably, in one embodiment of the present invention, the AlN layer is grown by MOCVD at a growth temperature of 900 to 950 ℃ and a growth pressure of 300to 500torr.
S255: growing an AlScN filling layer on the composite wrapping layer to obtain an electron blocking layer;
wherein the AlScN fill-in layer may be grown by PVD, MOCVD or MBE, but is not limited thereto.
Preferably, in one embodiment of the present invention, the AlScN filling layer is grown by MOCVD at a growth temperature of 970-1000 ℃ and a growth pressure of 50-100 torr.
S26: growing a P-type GaN layer on the electron blocking layer;
in one embodiment of the invention, the P-type GaN layer is grown by MOCVD at 900-1000 ℃ under 100-300 torr.
The invention is further illustrated by the following examples:
example 1
Referring to fig. 1 and 2, the present embodiment provides a light emitting diode epitaxial wafer, which includes a substrate 1, a buffer layer 2, an undoped GaN layer 3, an N-type GaN layer 4, a multiple quantum well layer 5, an electron blocking layer 6, and a P-type GaN layer 7 sequentially stacked on the substrate 1.
Wherein the substrate 1 is a sapphire substrate, the buffer layer 2 is an AlN layer, and the thickness of the AlN layer is 30nm. The thickness of the undoped GaN layer 3 was 1.8 μm. The doping element of the N-type GaN layer 4 is Si, and the doping concentration is 2×10 19 cm -3 The thickness thereof was 2.5. Mu.m.
The multiple quantum well layer 5 has a periodic structure, and the number of periods is 10, and each period includes an InGaN well layer and a GaN barrier layer which are sequentially stacked. The thickness of the InGaN well layer was 3nm. The thickness of the GaN barrier layer was 10nm.
The electron blocking layer 6 comprises an InN doped Mg nucleation layer 61, a composite coating layer 62 and an AlScN filling layer 63 which are sequentially laminated on the multiple quantum well layer 5; the composite clad layer 62 includes an AlInN layer 621, an AlGaN layer 622, and an AlN layer 623 sequentially stacked on the Mg-doped InN nucleation layer 61. The Mg-doped InN nucleation layer 61 comprises a plurality of nucleation sites distributed on the multiple quantum well layer 5, the height of the nucleation sites is 6nm, and the doping concentration of Mg is 4×10 18 cm -3 . The AlInN layer 621 has a thickness of 4nm and an Al composition ratio of 0.44. The AlGaN layer 622 has a thickness of 4nm and an Al composition ratio of 0.44. The AlN layer 623 has a thickness of 4nm. The AlScN filled layer 63 has a thickness of 30nm and an Al component ratio of 0.76.
Wherein the doping element of the P-type GaN layer 7 is Mg, and the doping concentration is 3×10 19 cm -3 The thickness was 50nm.
The preparation method of the light-emitting diode epitaxial wafer in the embodiment comprises the following steps:
(1) The substrate was provided, loaded into a MOCVD reaction chamber, and annealed at 1050℃under 300torr for 7min in a hydrogen atmosphere.
(2) Growing a buffer layer on a substrate;
wherein an AlN layer is grown by PVD as a buffer layer.
(3) Growing an undoped GaN layer on the buffer layer;
wherein, the undoped GaN layer is grown by MOCVD, the growth temperature is 1070 ℃, and the growth pressure is 200torr.
(4) Growing an N-type GaN layer on the undoped GaN layer;
wherein, the growth temperature of the N-type GaN layer is 1120 ℃ and the growth pressure is 200torr by MOCVD.
(5) Growing a multi-quantum well layer on the N-type GaN layer;
and periodically growing an InGaN well layer and a GaN barrier layer through MOCVD growth until a multi-quantum well layer is obtained. The growth temperature of the InGaN well layer is 770 ℃, and the growth pressure is 300torr. The growth temperature of the GaN barrier layer is 870 ℃, and the growth pressure is 300torr.
(6) Growing an InN doped nucleation layer on the multiple quantum well layer;
wherein, the Mg doped InN nucleation layer is grown by MOCVD, the growth temperature is 820 ℃, and the growth pressure is 200torr.
(7) Growing an AlInN layer on the Mg-doped InN nucleation layer;
wherein, alInN layer is grown by MOCVD, the growth temperature is 930 ℃, and the growth pressure is 450torr.
(8) Growing an AlGaN layer on the AlInN layer;
wherein, the AlGaN layer is grown by MOCVD, the growth temperature is 930 ℃, and the growth pressure is 450torr.
(9) Growing an AlN layer on the AlGaN layer to obtain a composite wrapping layer;
wherein, the AlN layer is grown by MOCVD, the growth temperature is 930 ℃, and the growth pressure is 450torr.
(10) Growing an AlScN filling layer on the composite wrapping layer to obtain an electron blocking layer;
wherein, alScN filling layer is grown by MOCVD, the growth temperature is 990 ℃, and the growth pressure is 80torr.
(11) Growing a P-type GaN layer on the electron blocking layer;
wherein the P-type GaN layer is grown by MOCVD. The growth temperature was 930℃and the growth pressure was 200torr.
Example 2
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 1 in that:
the height of nucleation sites in the Mg-doped InN nucleation layer 61 is 2nm, and the doping concentration of Mg is 5×10 19 cm -3 . The Al composition ratio in AlInN layer 621 is 0.36. The Al composition ratio in the AlGaN layer 622 is 0.36.
The remainder was the same as in example 1.
Example 3
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 2 in that:
the Al composition ratio in AlInN layer 621 is 0.25. The Al composition ratio in the AlGaN layer 622 is 0.4.
The remainder was the same as in example 2.
Example 4
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 3 in that:
the Al composition ratio in the AlScN fill layer 63 was 0.82.
The remainder was the same as in example 3.
Example 5
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 4 in that:
AlGaN layer 622 is doped with Mg element at a doping concentration of 1×10 20 cm -3 。
The remainder was the same as in example 4.
Comparative example 1
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that:
the electron blocking layer is an AlGaN layer with a thickness of 48nm and an Al composition ratio of 0.5. The electron blocking layer was grown by MOCVD at a growth temperature of 960℃and a growth pressure of 300torr.
The remainder was the same as in example 1.
Comparative example 2
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that:
the electron blocking layer does not comprise an InN doped nuclear layer, and correspondingly, the preparation method does not comprise the step of preparing the nuclear layer.
The remainder was the same as in example 1.
Comparative example 3
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that:
the electron blocking layer does not include a composite coating layer, and correspondingly, the preparation method does not include the step of preparing the composite coating layer.
The remainder was the same as in example 1.
Comparative example 4
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that:
the electron blocking layer does not comprise an AlScN filling layer, and correspondingly, the preparation method does not comprise the step of preparing the layer.
The remainder was the same as in example 1.
Processing the light-emitting diode epitaxial wafers obtained in examples 1 to 5 and comparative examples 1 to 4 into 10×24mil LED chips with vertical structures, and testing the light-emitting brightness and antistatic capability; the specific test method comprises the following steps:
(1) Brightness: when 120mA of current was applied, the brightness of the obtained LED chip was measured, 10 for each example and comparative example, and the average value was obtained. And calculating a luminance improvement ratio based on comparative example 1;
(2) Antistatic ability: and testing the antistatic performance of the LED chip by using an electrostatic instrument under an HBM (human body discharge model) model, wherein the tested LED chip can bear the passing proportion of reverse 8000V static electricity.
The specific test results are shown in the following table:
as can be seen from the table, when the conventional electron blocking layer (comparative example 1) was replaced with the electron blocking layer (example 1) of the present invention, the light emitting efficiency and antistatic ability were improved.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (10)
1. A light-emitting diode epitaxial wafer comprises a substrate, and a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer which are sequentially laminated on the substrate; the electron blocking layer comprises an Mg-doped InN nucleation layer, a composite coating layer and an AlScN filling layer which are sequentially laminated on the multiple quantum well layer; the composite coating layer comprises an AlInN layer, an AlGaN layer and an AlN layer which are sequentially laminated on the Mg-doped InN nucleation layer;
the Mg-doped InN nucleation layer comprises a plurality of nucleation points distributed on the multiple quantum well layer, and the composite coating layer coats the nucleation points;
wherein the doping concentration of Mg in the Mg-doped InN nucleation layer is 1 multiplied by 10 18 cm -3 ~5×10 20 cm -3 ；
The Al component in the AlScN filling layer accounts for 0.75-0.95;
the height of the nucleation point is 0.5 nm-7 nm.
2. The light-emitting diode epitaxial wafer of claim 1, wherein the doping element of the Mg-doped InN nucleation layer is Mg with a doping concentration of5×10 18 cm -3 ~5×10 20 cm -3 ；
The height of the nucleation point is 0.5 nm-5 nm.
3. The light-emitting diode epitaxial wafer of claim 1, wherein the AlInN layer has a thickness of 1nm to 10nm and an al composition ratio of 0.1 to 0.4;
the thickness of the AlGaN layer is 1 nm-10 nm, and the Al component accounts for 0.3-0.5;
the thickness of the AlN layer is 1 nm-10 nm.
4. The light-emitting diode epitaxial wafer of claim 1, wherein the AlScN filling layer has a thickness of 5nm to 50nm and an Al component ratio of 0.8 to 0.9.
5. The light-emitting diode epitaxial wafer of any one of claims 1-4, wherein the Al composition ratio in the AlInN layer is smaller than the Al composition ratio in the AlGaN layer.
6. The led epitaxial wafer of claim 5, wherein said AlGaN layer is doped with Mg element at a doping concentration of 5 x 10 19 cm -3 ~7×10 20 cm -3 。
7. A method for preparing a light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer according to any one of claims 1 to 6, and is characterized by comprising the following steps:
providing a substrate, and sequentially growing a buffer layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer on the substrate; the electron blocking layer comprises an Mg-doped InN nucleation layer, a composite coating layer and an AlScN filling layer which are sequentially laminated on the multiple quantum well layer; the composite coating layer comprises an AlInN layer, an AlGaN layer and an AlN layer which are sequentially laminated on the Mg-doped InN nucleation layer;
the Mg-doped InN nucleation layer comprises a plurality of nucleation points distributed on the multiple quantum well layer, and the composite coating layer coats the nucleation points;
wherein the doping concentration of Mg in the Mg-doped InN nucleation layer is 1 multiplied by 10 18 cm -3 ~5×10 20 cm -3 ；
The Al component in the AlScN filling layer accounts for 0.75-0.95;
the height of the nucleation point is 0.5 nm-7 nm.
8. The method for preparing a light-emitting diode epitaxial wafer according to claim 7, wherein the growth temperature of the Mg-doped InN nucleation layer is 800-900 ℃ and the growth pressure is 100-300 torr;
the growth temperature of the composite coating layer is 900-950 ℃ and the growth pressure is 300-500 torr.
9. The method for manufacturing an epitaxial wafer of a light emitting diode according to claim 7, wherein the AlScN filling layer has a growth temperature of 970-1000 ℃ and a growth pressure of 50-100 torr.
10. A light emitting diode comprising the light emitting diode epitaxial wafer according to any one of claims 1 to 6.
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