MD626G2 - Procedeu de preparare a heterojoncţiunilor p+ InP-pInP/CdS şi p+ GaAs-pGaAs/CdS - Google Patents

Procedeu de preparare a heterojoncţiunilor p+ InP-pInP/CdS şi p+ GaAs-pGaAs/CdS

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Publication number
MD626G2
MD626G2 MD94-0004A MD940004A MD626G2 MD 626 G2 MD626 G2 MD 626G2 MD 940004 A MD940004 A MD 940004A MD 626 G2 MD626 G2 MD 626G2
Authority
MD
Moldova
Prior art keywords
cds
reactor
pgaas
pinp
inp
Prior art date
Application number
MD94-0004A
Other languages
English (en)
Russian (ru)
Other versions
MD626F2 (ro
MD940004A (ro
Inventor
Vasile Botnariuc
Petru Gaugas
Андрей КОВАЛ
Andrei Chitoroaga
Valentin Plesca
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MD94-0004A priority Critical patent/MD626G2/ro
Publication of MD940004A publication Critical patent/MD940004A/ro
Publication of MD626F2 publication Critical patent/MD626F2/ro
Publication of MD626G2 publication Critical patent/MD626G2/ro

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  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Invenţia se referă la tehnologia semiconductorilor şi poate fi utilizată la obţinerea în sistem deschis cu transport de gaze a heterojoncţiunilor p+InP-pInP/CdS şi p+GaAs-pGaAs/CdS pentru celule solare şi fotodiode.Pentru mărirea productivităţii procesului şi a calităţii parametrilor electrofizici ai celulelor solare cu ajutorul procedeului solicitat, care include creşterea structurilor p+InP-pInP şi p+GaAs-pGaAs în sistem de cloruri cu transport de gaze, decaparea chimică, plasarea structurilor în reactor, purjarea reactorului cu hidrogen, încălzirea cuptorului electric, creşterea stratului CdS se efectuează după amplasarea reactorului în cuptor şi stabilizarea temperaturilor, după aceasta reactorul este scos din cuptor, în timpul creşterii debitele fluxului de hidrogen în zona sursei şi în zona de creştere fiind, respectiv, de 150 cm3/min şi 220...240 cm3/min, iar în timpul stabilizării temperaturilor şi în timpul răcirii respectiv de 20...30 cm3/min şi 1000 cm3/min.Rezultatul tehnic constă în reducerea duratei de stabilizare a regimului de temperatură în reactor, ceea ce asigură păstrarea parametrilor electrofizici ai substraturilor şi componenţa sursei, frânarea procesului de difuzie reciprocă a componentelor heterostructurii.
MD94-0004A 1994-01-13 1994-01-13 Procedeu de preparare a heterojoncţiunilor p+ InP-pInP/CdS şi p+ GaAs-pGaAs/CdS MD626G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MD94-0004A MD626G2 (ro) 1994-01-13 1994-01-13 Procedeu de preparare a heterojoncţiunilor p+ InP-pInP/CdS şi p+ GaAs-pGaAs/CdS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD94-0004A MD626G2 (ro) 1994-01-13 1994-01-13 Procedeu de preparare a heterojoncţiunilor p+ InP-pInP/CdS şi p+ GaAs-pGaAs/CdS

Publications (3)

Publication Number Publication Date
MD940004A MD940004A (ro) 1995-07-31
MD626F2 MD626F2 (ro) 1996-11-29
MD626G2 true MD626G2 (ro) 1997-06-30

Family

ID=19738508

Family Applications (1)

Application Number Title Priority Date Filing Date
MD94-0004A MD626G2 (ro) 1994-01-13 1994-01-13 Procedeu de preparare a heterojoncţiunilor p+ InP-pInP/CdS şi p+ GaAs-pGaAs/CdS

Country Status (1)

Country Link
MD (1) MD626G2 (ro)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD972Z (ro) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD4280C1 (ro) * 2013-09-04 2014-10-31 Государственный Университет Молд0 Procedeu de creştere a structurii pInP-nCdS

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.Choy Appl. Physics, v. 8, nr. 4, 1977 (M. Bettini, K. J. Bochmann. E. Buchler, J. L. Choy, S.Wagner "Preparation of CdS/InP solar cells by chemical vapor deposition of CdS", p. 1603-1606). *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD972Z (ro) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice
MD4510C1 (ro) * 2016-06-23 2018-03-31 Государственный Университет Молд0 Procedeu de creştere a structurii n+-p-p+ InP pentru celule solare

Also Published As

Publication number Publication date
MD626F2 (ro) 1996-11-29
MD940004A (ro) 1995-07-31

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Legal Events

Date Code Title Description
FG3A Granted patent for invention
IF99 Valid patent on 19990615

Free format text: EXPIRES: 20140113