JPS5795898A - Growing method for silicon single crystal - Google Patents

Growing method for silicon single crystal

Info

Publication number
JPS5795898A
JPS5795898A JP17267180A JP17267180A JPS5795898A JP S5795898 A JPS5795898 A JP S5795898A JP 17267180 A JP17267180 A JP 17267180A JP 17267180 A JP17267180 A JP 17267180A JP S5795898 A JPS5795898 A JP S5795898A
Authority
JP
Japan
Prior art keywords
single crystal
silicon
silicon single
substrate
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17267180A
Other languages
Japanese (ja)
Other versions
JPH024557B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17267180A priority Critical patent/JPS5795898A/en
Publication of JPS5795898A publication Critical patent/JPS5795898A/en
Publication of JPH024557B2 publication Critical patent/JPH024557B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow a large silicon single crystal almost free from crystal defects by heating a silicon single crystal substrate provided with an SiO2 coat having an upper window and a polycrystalline silicon film to a specified temp. and irradiating the silicon film with high energy beams while keeping the temp.
CONSTITUTION: A silicon single crystal substrate 1 provided with an SiO2 coat 2 having an upper window and a polycrystalline silicon film 3 is set in a furnace and heated 700°C... the m.p. of silicon. While keeping the temp., the prescribed part of the silicon film 3 is irradiated with high energy beams such as laser beams to melt the prescribed part 5. The heating of the furnace is then stopped, or the substrate 1 is taken out of the furnace, and by cooling the substrate 1 at such a cooling rate as to cause no crack in the resulting single crystal, a silicon rate as to cause no crack in the resulting single crystal, a silicon single crystal 4 is grown. Thus, a silicon single crystal having several 10μm diameter can be obtd.
COPYRIGHT: (C)1982,JPO&Japio
JP17267180A 1980-12-09 1980-12-09 Growing method for silicon single crystal Granted JPS5795898A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17267180A JPS5795898A (en) 1980-12-09 1980-12-09 Growing method for silicon single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17267180A JPS5795898A (en) 1980-12-09 1980-12-09 Growing method for silicon single crystal

Publications (2)

Publication Number Publication Date
JPS5795898A true JPS5795898A (en) 1982-06-14
JPH024557B2 JPH024557B2 (en) 1990-01-29

Family

ID=15946205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17267180A Granted JPS5795898A (en) 1980-12-09 1980-12-09 Growing method for silicon single crystal

Country Status (1)

Country Link
JP (1) JPS5795898A (en)

Also Published As

Publication number Publication date
JPH024557B2 (en) 1990-01-29

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