JPS6489318A - Vapor growth susceptor - Google Patents
Vapor growth susceptorInfo
- Publication number
- JPS6489318A JPS6489318A JP24523087A JP24523087A JPS6489318A JP S6489318 A JPS6489318 A JP S6489318A JP 24523087 A JP24523087 A JP 24523087A JP 24523087 A JP24523087 A JP 24523087A JP S6489318 A JPS6489318 A JP S6489318A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- recess
- periphery
- groove
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To generate uniform spherical recesses and to prevent the periphery of a wafer from abnormally growing by allowing a section for supporting the wafer at its center to remain and providing a deep groove on the periphery. CONSTITUTION:In a vapor growing susceptor 1 having spherical recesses 2 for placing wafers, a section having smaller area than that of the wafer remains at its center as the bottom of the recess 2, and a deeper groove 28 than the depth 4 of the recess 2 is annularly formed on the periphery of the bottom in contact with the vertical side face 2A of the recess 2. The groove 2B is covered with silicon carbide 1A on the whole surface of the carbon core of the susceptor 1, thereby eliminating an influence to the wafer due to the atmosphere and temperature distribution of the carbon core material at the time of vapor chemical reaction. It can prevent the periphery of the wafer from abnormally growing by utilizing the groove 2A formed by retaining as the bottom of the recess 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24523087A JPS6489318A (en) | 1987-09-29 | 1987-09-29 | Vapor growth susceptor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24523087A JPS6489318A (en) | 1987-09-29 | 1987-09-29 | Vapor growth susceptor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6489318A true JPS6489318A (en) | 1989-04-03 |
Family
ID=17130591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24523087A Pending JPS6489318A (en) | 1987-09-29 | 1987-09-29 | Vapor growth susceptor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6489318A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003096396A1 (en) * | 2002-05-07 | 2003-11-20 | Mattson Technology, Inc | Process and system for heating semiconductor substrates in a processing chamber containing a susceptor |
WO2013133204A1 (en) * | 2012-03-07 | 2013-09-12 | 東洋炭素株式会社 | Susceptor |
JP2017022320A (en) * | 2015-07-14 | 2017-01-26 | 昭和電工株式会社 | Wafer support table, wafer support body, and chemical vapor deposition apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5352370A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Wafer susceptor |
JPS5828827A (en) * | 1981-08-12 | 1983-02-19 | Matsushita Electric Ind Co Ltd | Chemical vapor deposition film forming apparatus |
-
1987
- 1987-09-29 JP JP24523087A patent/JPS6489318A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5352370A (en) * | 1976-10-25 | 1978-05-12 | Hitachi Ltd | Wafer susceptor |
JPS5828827A (en) * | 1981-08-12 | 1983-02-19 | Matsushita Electric Ind Co Ltd | Chemical vapor deposition film forming apparatus |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003096396A1 (en) * | 2002-05-07 | 2003-11-20 | Mattson Technology, Inc | Process and system for heating semiconductor substrates in a processing chamber containing a susceptor |
JP2005530335A (en) * | 2002-05-07 | 2005-10-06 | マットソン テクノロジイ インコーポレイテッド | Process and system for heating a semiconductor substrate in a processing chamber including a susceptor |
JP4786177B2 (en) * | 2002-05-07 | 2011-10-05 | マットソン テクノロジイ インコーポレイテッド | Process and system for heating a semiconductor substrate in a processing chamber including a susceptor |
WO2013133204A1 (en) * | 2012-03-07 | 2013-09-12 | 東洋炭素株式会社 | Susceptor |
JP2013187278A (en) * | 2012-03-07 | 2013-09-19 | Toyo Tanso Kk | Susceptor |
JP2017022320A (en) * | 2015-07-14 | 2017-01-26 | 昭和電工株式会社 | Wafer support table, wafer support body, and chemical vapor deposition apparatus |
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