JPS6489318A - Vapor growth susceptor - Google Patents

Vapor growth susceptor

Info

Publication number
JPS6489318A
JPS6489318A JP24523087A JP24523087A JPS6489318A JP S6489318 A JPS6489318 A JP S6489318A JP 24523087 A JP24523087 A JP 24523087A JP 24523087 A JP24523087 A JP 24523087A JP S6489318 A JPS6489318 A JP S6489318A
Authority
JP
Japan
Prior art keywords
wafer
recess
periphery
groove
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24523087A
Other languages
Japanese (ja)
Inventor
Yoshio Haseno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24523087A priority Critical patent/JPS6489318A/en
Publication of JPS6489318A publication Critical patent/JPS6489318A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To generate uniform spherical recesses and to prevent the periphery of a wafer from abnormally growing by allowing a section for supporting the wafer at its center to remain and providing a deep groove on the periphery. CONSTITUTION:In a vapor growing susceptor 1 having spherical recesses 2 for placing wafers, a section having smaller area than that of the wafer remains at its center as the bottom of the recess 2, and a deeper groove 28 than the depth 4 of the recess 2 is annularly formed on the periphery of the bottom in contact with the vertical side face 2A of the recess 2. The groove 2B is covered with silicon carbide 1A on the whole surface of the carbon core of the susceptor 1, thereby eliminating an influence to the wafer due to the atmosphere and temperature distribution of the carbon core material at the time of vapor chemical reaction. It can prevent the periphery of the wafer from abnormally growing by utilizing the groove 2A formed by retaining as the bottom of the recess 2.
JP24523087A 1987-09-29 1987-09-29 Vapor growth susceptor Pending JPS6489318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24523087A JPS6489318A (en) 1987-09-29 1987-09-29 Vapor growth susceptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24523087A JPS6489318A (en) 1987-09-29 1987-09-29 Vapor growth susceptor

Publications (1)

Publication Number Publication Date
JPS6489318A true JPS6489318A (en) 1989-04-03

Family

ID=17130591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24523087A Pending JPS6489318A (en) 1987-09-29 1987-09-29 Vapor growth susceptor

Country Status (1)

Country Link
JP (1) JPS6489318A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003096396A1 (en) * 2002-05-07 2003-11-20 Mattson Technology, Inc Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
WO2013133204A1 (en) * 2012-03-07 2013-09-12 東洋炭素株式会社 Susceptor
JP2017022320A (en) * 2015-07-14 2017-01-26 昭和電工株式会社 Wafer support table, wafer support body, and chemical vapor deposition apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352370A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Wafer susceptor
JPS5828827A (en) * 1981-08-12 1983-02-19 Matsushita Electric Ind Co Ltd Chemical vapor deposition film forming apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352370A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Wafer susceptor
JPS5828827A (en) * 1981-08-12 1983-02-19 Matsushita Electric Ind Co Ltd Chemical vapor deposition film forming apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003096396A1 (en) * 2002-05-07 2003-11-20 Mattson Technology, Inc Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
JP2005530335A (en) * 2002-05-07 2005-10-06 マットソン テクノロジイ インコーポレイテッド Process and system for heating a semiconductor substrate in a processing chamber including a susceptor
JP4786177B2 (en) * 2002-05-07 2011-10-05 マットソン テクノロジイ インコーポレイテッド Process and system for heating a semiconductor substrate in a processing chamber including a susceptor
WO2013133204A1 (en) * 2012-03-07 2013-09-12 東洋炭素株式会社 Susceptor
JP2013187278A (en) * 2012-03-07 2013-09-19 Toyo Tanso Kk Susceptor
JP2017022320A (en) * 2015-07-14 2017-01-26 昭和電工株式会社 Wafer support table, wafer support body, and chemical vapor deposition apparatus

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