JPS536568A - Liquid-phase epitaxial growth method - Google Patents
Liquid-phase epitaxial growth methodInfo
- Publication number
- JPS536568A JPS536568A JP8119476A JP8119476A JPS536568A JP S536568 A JPS536568 A JP S536568A JP 8119476 A JP8119476 A JP 8119476A JP 8119476 A JP8119476 A JP 8119476A JP S536568 A JPS536568 A JP S536568A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- epitaxial growth
- phase epitaxial
- growth method
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8119476A JPS536568A (en) | 1976-07-07 | 1976-07-07 | Liquid-phase epitaxial growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8119476A JPS536568A (en) | 1976-07-07 | 1976-07-07 | Liquid-phase epitaxial growth method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS536568A true JPS536568A (en) | 1978-01-21 |
Family
ID=13739654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8119476A Pending JPS536568A (en) | 1976-07-07 | 1976-07-07 | Liquid-phase epitaxial growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS536568A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2562426A (en) * | 2016-02-01 | 2018-11-14 | Tokai Rika Co Ltd | Switch device |
-
1976
- 1976-07-07 JP JP8119476A patent/JPS536568A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2562426A (en) * | 2016-02-01 | 2018-11-14 | Tokai Rika Co Ltd | Switch device |
GB2562426B (en) * | 2016-02-01 | 2021-05-26 | Tokai Rika Co Ltd | Switch device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52103735A (en) | High-frequency heater | |
JPS536568A (en) | Liquid-phase epitaxial growth method | |
JPS5398775A (en) | Gas phase growth unit | |
ES8101525A1 (en) | Batch process and apparatus for forming a reaction product such as calcium silicate. | |
ES476577A1 (en) | Continuous process for producing a finely divided aqueous disperson of a homogeneous phase of at least one fusible solid ingredient | |
GB2023026B (en) | Method for the manufacture of tubes from steel having highductility at low temperature | |
JPS5290852A (en) | Tabular, hollow generating plate | |
JPS52124859A (en) | Continuous vapor phase growth apparatus | |
JPS5368447A (en) | Heat-accumulating system | |
JPS5249989A (en) | Growth method of liquid phase epitaxial | |
JPS536567A (en) | Device for effecting liquid-phase epitaxial growth | |
JPS51142750A (en) | Refrigerator | |
JPS52106381A (en) | Automatic control apparatus for diameter of crystal | |
JPS51136581A (en) | Process for production of a semi-conductor crystal | |
JPS53149078A (en) | Temperature estimation of steel ingot | |
JPS5384458A (en) | Vapor growth method | |
JPS52132675A (en) | Vapor-phase growth method of thin film | |
JPS5297455A (en) | Heating apparatus for low temperature fluid | |
JPS5290408A (en) | Equipment for controlling speed of rod-shaped material to be headened | |
JPS52120682A (en) | Gas phase growth method | |
JPS51128756A (en) | Heating pipe | |
JPS5555521A (en) | Method of epitaxial growth at liquid phase | |
JPS5356197A (en) | Gas phase growing method of ultraphosphate | |
JPS51126037A (en) | Semiconductor crystal growth method | |
JPS538853A (en) | Cooling water temperature controller |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081019 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 7 Free format text: PAYMENT UNTIL: 20081019 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091019 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 8 Free format text: PAYMENT UNTIL: 20091019 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101019 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101019 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111019 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111019 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 11 Free format text: PAYMENT UNTIL: 20121019 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121019 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 12 Free format text: PAYMENT UNTIL: 20131019 |
|
LAPS | Cancellation because of no payment of annual fees |