GB1073587A - A method for the production and control of translatory motion in processes for the manufacture of shaped semiconductors - Google Patents

A method for the production and control of translatory motion in processes for the manufacture of shaped semiconductors

Info

Publication number
GB1073587A
GB1073587A GB39262/64A GB3926264A GB1073587A GB 1073587 A GB1073587 A GB 1073587A GB 39262/64 A GB39262/64 A GB 39262/64A GB 3926264 A GB3926264 A GB 3926264A GB 1073587 A GB1073587 A GB 1073587A
Authority
GB
United Kingdom
Prior art keywords
oil
crucible
autoclave
vessel
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39262/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consortium fuer Elektrochemische Industrie GmbH
Original Assignee
Consortium fuer Elektrochemische Industrie GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consortium fuer Elektrochemische Industrie GmbH filed Critical Consortium fuer Elektrochemische Industrie GmbH
Publication of GB1073587A publication Critical patent/GB1073587A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/32—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

In the progressive crystallization, crystal-pulling or zone-melting of a volatile semi-conductor material entirely within a pressure vessel, the required relative movement is transmitted from the upper surface of a liquid contained within the vessel and in communication with the outside of the vessel through a valved conduit, the level of which surface is raised or lowered by introducing further liquid under pressure or by running off liquid from the vessel respectively. A relative rotary movement may be effected by means of a magnetic coupling. The semi-conductor material may be selenium, tellurium, cadmium sulphide, or gallium arsenide. In one embodiment (Fig. 1), a water-cooled autoclave (1) supplied with inert gas at a pressure of up to 150 atmos contains a crucible (6) which is surrounded by a heating element (8) and is attached to a cylindrical float (4) on oil (3) in the bottom of the autoclave. A molten body contained in the crucible is progressively crystallized by opening an oil outlet valve (15), thus lowering the level of oil in the autoclave and downwardly withdrawing the crucible from the heating element. In another embodiment (Fig. 2), the autoclave contains a crucible (33) and pulling rod (29) which is attached to an annular float chamber (27) containing oil (26) and having an inlet valve (37) for oil under pressure. A crystal is pulled from melt in the crucible (33) by opening the valve, thus increasing the level of oil in the chamber and raising the rod.
GB39262/64A 1963-09-26 1964-09-25 A method for the production and control of translatory motion in processes for the manufacture of shaped semiconductors Expired GB1073587A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEC0030980 1963-09-26

Publications (1)

Publication Number Publication Date
GB1073587A true GB1073587A (en) 1967-06-28

Family

ID=7019613

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39262/64A Expired GB1073587A (en) 1963-09-26 1964-09-25 A method for the production and control of translatory motion in processes for the manufacture of shaped semiconductors

Country Status (2)

Country Link
US (1) US3340016A (en)
GB (1) GB1073587A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2456385C2 (en) * 2009-12-14 2012-07-20 Общество с ограниченной ответственностью "Диал" Procedure for production of monocrystals and facility for implementation of this procedure

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3493348A (en) * 1966-07-01 1970-02-03 Ibm Buoyant device in crystal growing
US3607137A (en) * 1966-11-18 1971-09-21 Hayakawa Denki Kogyo Kk Method of avoiding strain in phase transitions of single crystals
US3650703A (en) * 1967-09-08 1972-03-21 Tyco Laboratories Inc Method and apparatus for growing inorganic filaments, ribbon from the melt
DE2143112A1 (en) * 1971-08-27 1973-03-01 Siemens Ag METHOD FOR ACHIEVING A UNIFORM RADIAL RESISTANCE PROGRESS IN THE PRODUCTION OF A SEMICONDUCTOR SINGLE CRYSTAL ROD BY CRUCIBLE-FREE ZONE MELTING
FR2235458B1 (en) * 1973-06-28 1977-05-13 Labo Electronique Physique
US5863326A (en) * 1996-07-03 1999-01-26 Cermet, Inc. Pressurized skull crucible for crystal growth using the Czochralski technique
US5900060A (en) * 1996-07-03 1999-05-04 Cermet, Inc. Pressurized skull crucible apparatus for crystal growth and related system and methods

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3025191A (en) * 1953-07-13 1962-03-13 Raytheon Co Crystal-growing apparatus and methods
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
NL104388C (en) * 1956-11-28
DE1080070B (en) * 1958-10-24 1960-04-21 Otto & Co Gmbh Dr C Device for the continuous indirect heating of mixtures of high-boiling hydrocarbons
US3206286A (en) * 1959-07-23 1965-09-14 Westinghouse Electric Corp Apparatus for growing crystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2456385C2 (en) * 2009-12-14 2012-07-20 Общество с ограниченной ответственностью "Диал" Procedure for production of monocrystals and facility for implementation of this procedure

Also Published As

Publication number Publication date
US3340016A (en) 1967-09-05

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