JPS56149400A - Manufacturing apparatus for single crystal - Google Patents
Manufacturing apparatus for single crystalInfo
- Publication number
- JPS56149400A JPS56149400A JP5037680A JP5037680A JPS56149400A JP S56149400 A JPS56149400 A JP S56149400A JP 5037680 A JP5037680 A JP 5037680A JP 5037680 A JP5037680 A JP 5037680A JP S56149400 A JPS56149400 A JP S56149400A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- single crystal
- gaseous
- semiconductor
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To manufacture a single crystal of a semiconductor with little crystal deformation and little pollution by carbon by allowing a gas to flow upward from the bottom of the pulling furnace of an apparatus for manufacturing a single crystal by a pulling method.
CONSTITUTION: When a single crystal is pulled, gaseous Ar is introduced into furnace 11 from inlet 20 and allowed to flow upward like solid line arrow A. Since the direction of the gaseous Ar agrees with that of heat convection (the dotted line arrows) caused in furnace 11, constant rising gas flows are formed in the vicinity of the opening of crucible 12. Accordingly, microcrystals of silicon oxide evaporated from molten semiconductor 12 and solidified on the furnace wall and the space are prevented from dropping into crucible 12, and gaseous CO generated from the carbon material of heating element 16 such as carbon heater is prevented from entering semiconductor 13. In addition, by this method the deposition of silicon oxide is restricted to the upper part of furnace 11, so by cleaning the upper part alone, the apparatus can be used repeatedly.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5037680A JPS56149400A (en) | 1980-04-18 | 1980-04-18 | Manufacturing apparatus for single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5037680A JPS56149400A (en) | 1980-04-18 | 1980-04-18 | Manufacturing apparatus for single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56149400A true JPS56149400A (en) | 1981-11-19 |
Family
ID=12857154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5037680A Pending JPS56149400A (en) | 1980-04-18 | 1980-04-18 | Manufacturing apparatus for single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56149400A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6437492A (en) * | 1987-08-04 | 1989-02-08 | Osaka Titanium | Single crystal growing apparatus |
| RU2472875C1 (en) * | 2011-08-24 | 2013-01-20 | Общество с ограниченной ответственностью "Макси-М" | Method for growing silicon monocrystal from molten metal |
| RU2663130C1 (en) * | 2018-02-12 | 2018-08-01 | Акционерное общество "Управляющая компания "АКЦЕНТ" | Method for growing silicon monocrystal from melt |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50123201A (en) * | 1974-03-15 | 1975-09-27 | ||
| JPS528163B2 (en) * | 1973-02-10 | 1977-03-07 |
-
1980
- 1980-04-18 JP JP5037680A patent/JPS56149400A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS528163B2 (en) * | 1973-02-10 | 1977-03-07 | ||
| JPS50123201A (en) * | 1974-03-15 | 1975-09-27 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6437492A (en) * | 1987-08-04 | 1989-02-08 | Osaka Titanium | Single crystal growing apparatus |
| RU2472875C1 (en) * | 2011-08-24 | 2013-01-20 | Общество с ограниченной ответственностью "Макси-М" | Method for growing silicon monocrystal from molten metal |
| RU2663130C1 (en) * | 2018-02-12 | 2018-08-01 | Акционерное общество "Управляющая компания "АКЦЕНТ" | Method for growing silicon monocrystal from melt |
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