JPS6437492A - Single crystal growing apparatus - Google Patents

Abstract

PURPOSE:To prevent the contact of a gas generated from a crucible with a high- temperature heater, crucible, heat insulating material, etc., and contrive the extension of these lives, by sucking and discharging the gas generated from the crucible at higher position that that of the crucible together with a carrier gas. CONSTITUTION:A cylindrical radiation screen 7 made of metal is concentrically and vertically arranged so as to surround the pulling-up area of a single crystal 5 around a pulling up port 1b in a chamber 1 and the lower end thereof is set so as to be situated to a prescribed height on the melted face in the crucible 3. An inert gas charged into the chamber 1 is led to the central part of melted face in the crucible 3 and led to the fringe part of the crucible through gap between melted liquid face and screen 7 along the melted face from the central part. The inert gas is discharged from a discharge port 8 opened in the upper part of side wall of the chamber 1 which is located in the higher position than that of opening of the crucible 3 and upper end of a heater 4 through the gap between the melt face and radiation screen 7 along the melt face. In the above-mentioned apparatus, after melting a raw material, a seed crystal 6 is dipped into the melt in the crucible and then raised while rotating and a single crystal 5 is grown in the lower end of the seed crystal 6.