JPS57118090A - Manufacturing apparatus for beltlike silicon crystal - Google Patents
Manufacturing apparatus for beltlike silicon crystalInfo
- Publication number
- JPS57118090A JPS57118090A JP17281A JP17281A JPS57118090A JP S57118090 A JPS57118090 A JP S57118090A JP 17281 A JP17281 A JP 17281A JP 17281 A JP17281 A JP 17281A JP S57118090 A JPS57118090 A JP S57118090A
- Authority
- JP
- Japan
- Prior art keywords
- dies
- heaters
- crystals
- beltlike
- longitudinal direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To efficiently grow a plurality of beltlike silicon crystals at the same time by installing a pair of auxiliary heaters perpendicularly to the longitudinal direction of a plurality of dies at both sides of main heaters besides the main heaters to make the temp. distibution of molten silicon in a crucible uniform.
CONSTITUTION: A plurality of capillary dies 13, 14, 15 are arranged in a quartz crucible 12 holding molten silicon 11 in a straight line, and seed crystals are brought into contact with molten silicon rising through the slits of the dies 13, 14, 15 to pull up beltlike silicon crystals. In this apparatus a pair of main platelike heaters 20a, 20b are installed opposite to each other at the outside of the crucible 12 in the longitudinal direction of the dies, and a pair of auxiliary platelike heaters 31a, 31b are further installed opposite to each other and perpendicularly to the longitudinal direction of the dies. Thus, the temp. distribution of the melt 11 is made uniform, a plurality of beltlike silicon crystals can be grown in ≥80% yield, and the quantity of crystals grown per unit time can be increased considerably.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17281A JPS5932429B2 (en) | 1981-01-06 | 1981-01-06 | Manufacturing equipment for band-shaped silicon crystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17281A JPS5932429B2 (en) | 1981-01-06 | 1981-01-06 | Manufacturing equipment for band-shaped silicon crystals |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57118090A true JPS57118090A (en) | 1982-07-22 |
JPS5932429B2 JPS5932429B2 (en) | 1984-08-08 |
Family
ID=11466590
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17281A Expired JPS5932429B2 (en) | 1981-01-06 | 1981-01-06 | Manufacturing equipment for band-shaped silicon crystals |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5932429B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008057150A (en) * | 2006-08-30 | 2008-03-13 | Nikko:Kk | Folding ladder |
EP2971273A4 (en) * | 2013-03-15 | 2016-11-16 | Saint Gobain Ceramics & Plastics Inc | Sapphire sheets and apparatus and method for producing sapphire sheets with angled heat shields |
-
1981
- 1981-01-06 JP JP17281A patent/JPS5932429B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008057150A (en) * | 2006-08-30 | 2008-03-13 | Nikko:Kk | Folding ladder |
EP2971273A4 (en) * | 2013-03-15 | 2016-11-16 | Saint Gobain Ceramics & Plastics Inc | Sapphire sheets and apparatus and method for producing sapphire sheets with angled heat shields |
Also Published As
Publication number | Publication date |
---|---|
JPS5932429B2 (en) | 1984-08-08 |
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