JPS57118090A - Manufacturing apparatus for beltlike silicon crystal - Google Patents

Manufacturing apparatus for beltlike silicon crystal

Info

Publication number
JPS57118090A
JPS57118090A JP17281A JP17281A JPS57118090A JP S57118090 A JPS57118090 A JP S57118090A JP 17281 A JP17281 A JP 17281A JP 17281 A JP17281 A JP 17281A JP S57118090 A JPS57118090 A JP S57118090A
Authority
JP
Japan
Prior art keywords
dies
heaters
crystals
beltlike
longitudinal direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17281A
Other languages
Japanese (ja)
Other versions
JPS5932429B2 (en
Inventor
Naoaki Maki
Kazue Sekikawa
Masanaru Abe
Toshiyuki Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP17281A priority Critical patent/JPS5932429B2/en
Publication of JPS57118090A publication Critical patent/JPS57118090A/en
Publication of JPS5932429B2 publication Critical patent/JPS5932429B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To efficiently grow a plurality of beltlike silicon crystals at the same time by installing a pair of auxiliary heaters perpendicularly to the longitudinal direction of a plurality of dies at both sides of main heaters besides the main heaters to make the temp. distibution of molten silicon in a crucible uniform.
CONSTITUTION: A plurality of capillary dies 13, 14, 15 are arranged in a quartz crucible 12 holding molten silicon 11 in a straight line, and seed crystals are brought into contact with molten silicon rising through the slits of the dies 13, 14, 15 to pull up beltlike silicon crystals. In this apparatus a pair of main platelike heaters 20a, 20b are installed opposite to each other at the outside of the crucible 12 in the longitudinal direction of the dies, and a pair of auxiliary platelike heaters 31a, 31b are further installed opposite to each other and perpendicularly to the longitudinal direction of the dies. Thus, the temp. distribution of the melt 11 is made uniform, a plurality of beltlike silicon crystals can be grown in ≥80% yield, and the quantity of crystals grown per unit time can be increased considerably.
COPYRIGHT: (C)1982,JPO&Japio
JP17281A 1981-01-06 1981-01-06 Manufacturing equipment for band-shaped silicon crystals Expired JPS5932429B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17281A JPS5932429B2 (en) 1981-01-06 1981-01-06 Manufacturing equipment for band-shaped silicon crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17281A JPS5932429B2 (en) 1981-01-06 1981-01-06 Manufacturing equipment for band-shaped silicon crystals

Publications (2)

Publication Number Publication Date
JPS57118090A true JPS57118090A (en) 1982-07-22
JPS5932429B2 JPS5932429B2 (en) 1984-08-08

Family

ID=11466590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17281A Expired JPS5932429B2 (en) 1981-01-06 1981-01-06 Manufacturing equipment for band-shaped silicon crystals

Country Status (1)

Country Link
JP (1) JPS5932429B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008057150A (en) * 2006-08-30 2008-03-13 Nikko:Kk Folding ladder
EP2971273A4 (en) * 2013-03-15 2016-11-16 Saint Gobain Ceramics & Plastics Inc Sapphire sheets and apparatus and method for producing sapphire sheets with angled heat shields

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008057150A (en) * 2006-08-30 2008-03-13 Nikko:Kk Folding ladder
EP2971273A4 (en) * 2013-03-15 2016-11-16 Saint Gobain Ceramics & Plastics Inc Sapphire sheets and apparatus and method for producing sapphire sheets with angled heat shields

Also Published As

Publication number Publication date
JPS5932429B2 (en) 1984-08-08

Similar Documents

Publication Publication Date Title
GB1485357A (en) Apparatus for growing crystalline bodies from a melt
MY104476A (en) Apparatus for manufacturing silicon single crystals.
MY107784A (en) Method for growing multiple single crystals and apparatus for use therein
JPS5580798A (en) Ribbon crystal growing method by lateral pulling
JPS57118090A (en) Manufacturing apparatus for beltlike silicon crystal
MY104640A (en) Apparatus for manufacturing silicon single crystals.
SE8502375L (en) METHOD AND DEVICE FOR WRAPPONING OF MONOCRISTALLIC SILICON STARS
JPS5738398A (en) Quartz glass crucible for pulling up silicon single crystal
JPS5547300A (en) Crystal pulling device
JPS57118091A (en) Manufacturing apparatus for beltlike silicon crystal
JPS6461381A (en) Method for growing single crystal
JPS57196796A (en) Growing apparatus for beltlike silicon crystal
JPS55140800A (en) Crucible for crystal growing crucible device
GB1490114A (en) Growing crystals from a melt
JPS56104799A (en) Production of si single crystal and device therefor
JPS5490086A (en) Method of producing single crystal
JPS57129896A (en) Liquid phase epitaxial growing apparatus
JPS54141389A (en) Crucible used in crystal growing device, manufacture of said crucible and crystal growing method using said crucible
WENCKUS et al. Growth of high purity oxygen-free silicon by cold crucible techniques[Interim Report, 18 May 1980- 30 May 1981]
JPS57118095A (en) Manufacturing apparatus for beltlike silicon crystal
JPS55126596A (en) Production of single crystal
JPS57118092A (en) Manufacturing apparatus for beltlike silicon crystal
JPS57118094A (en) Manufacturing apparatus for beltlike silicon crystal
JPS56100195A (en) Growing method for semiconductor single crystal
JPS54128987A (en) Preparation of single crystal